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公开(公告)号:US20110146787A1
公开(公告)日:2011-06-23
申请号:US12994973
申请日:2009-05-28
IPC分类号: H01L31/032 , B32B7/02 , B32B9/04 , B32B3/00 , C09D1/00 , H01L31/0216
CPC分类号: C23C30/00 , C01B32/956 , C09D5/32 , C23C16/325 , C23C16/36 , C23C16/56 , C23C18/122 , C23C26/00 , C23C28/00 , C23C28/044 , C23C28/048 , H01L31/02168 , Y02E10/50 , Y10T428/24942 , Y10T428/24967 , Y10T428/265
摘要: The present invention relates to an antireflective coating comprising an amorphous silicon carbide-based film, which film further comprises hydrogen atoms and optionally further comprises oxygen and/or nitrogen, the film having an effective refractive index (n) between 2.3 and 2.7 and an extinction coefficient (k) of less than 0.01 at a wavelength of 630 nm. The present invention also relates to methods for preparing the antireflective coating and to solar cells comprising the antireflective coating.
摘要翻译: 本发明涉及包含非晶碳化硅基膜的抗反射涂层,该膜还包含氢原子,并且任选地还包含氧和/或氮,该膜具有2.3至2.7之间的有效折射率(n)和消光 系数(k)在630nm波长处小于0.01。 本发明还涉及制备抗反射涂层和包含抗反射涂层的太阳能电池的方法。
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公开(公告)号:US20100129994A1
公开(公告)日:2010-05-27
申请号:US12528584
申请日:2008-02-27
申请人: Yousef Awad , Sebastien Allen , Michael Davies , Alexandre Gaumond , My Ali El Khakani , Riadh Smirani
发明人: Yousef Awad , Sebastien Allen , Michael Davies , Alexandre Gaumond , My Ali El Khakani , Riadh Smirani
IPC分类号: H01L21/365 , C23C16/44 , C23C16/50 , C23C16/48 , B65D85/00
CPC分类号: C23C16/325 , C23C16/30 , C23C16/36 , C23C16/4485
摘要: A method for forming a film on a substrate comprising: heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The film comprises Si and C, and optionally comprises other elements such as N, O, F, B, P, or a combination thereof.
摘要翻译: 一种在基材上形成薄膜的方法,包括:在加热室中加热固体有机硅烷源以形成气态前体; 将气态前体转移到沉积室; 并且使用能量源使气体前体反应以在衬底上形成膜。 该膜包含Si和C,并且任选地包括其它元素如N,O,F,B,P或它们的组合。
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公开(公告)号:US20120305077A1
公开(公告)日:2012-12-06
申请号:US13578331
申请日:2011-02-10
申请人: Ra'ed Arab , Yousef Awad , Mihai Grumazescu
发明人: Ra'ed Arab , Yousef Awad , Mihai Grumazescu
IPC分类号: H01L31/0232 , H01L31/0203
CPC分类号: H01L31/0543 , F24S23/31 , F24S23/75 , F24S30/45 , F24S2023/872 , H02S40/44 , Y02E10/47 , Y02E10/52 , Y02E10/60
摘要: A concentrated photovoltaic and thermal system is disclosed. The system compromises a photovoltaic receiver assembly that produces highly concentrated solar energy, resulting in efficient energy conversion that requires fewer photovoltaic receivers than an arrangement that lacks such high concentration levels. The receiver assembly comprises a primary optical element that concentrates the source light onto an electromagnetic energy receiver, a secondary optical element to aid in further concentration of the light source, a thermal energy converter and a heat dissipation unit. The photovoltaic receiver assembly is preferably mounted on a tracking system to maximize sun exposure.
摘要翻译: 公开了一种集中的光伏和热系统。 该系统损害了产生高度集中的太阳能的光伏接收器组件,导致有效的能量转换,比缺乏这种高浓度水平的装置需要更少的光伏接收器。 接收器组件包括将源光聚焦到电磁能量接收器上的主要光学元件,辅助光学元件以辅助光源的进一步浓缩,热能转换器和散热单元。 光伏接收器组件优选地安装在跟踪系统上以使阳光曝光最大化。
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公开(公告)号:US06855646B2
公开(公告)日:2005-02-15
申请号:US10131030
申请日:2002-04-25
申请人: Yousef Awad , Éric Lavallée , Jacques Beauvais , Dominique Drouin
发明人: Yousef Awad , Éric Lavallée , Jacques Beauvais , Dominique Drouin
IPC分类号: G03F7/004 , G03F7/038 , G03F7/20 , G03F7/36 , G03F7/38 , H01L21/027 , H01L21/311 , H01L21/31 , H01L21/469
CPC分类号: G03F1/78 , G03F7/0046 , G03F7/038 , G03F7/38 , H01L21/0277 , H01L21/31138 , Y10S438/948 , Y10S438/95
摘要: A process for producing a pattern of negative electron beam resist comprises: depositing a layer of plasma polymerized fluoropolymer on a face of a substrate, the plasma polymerized fluoropolymer forming the negative electron beam resist; producing an electron beam; moving the electron beam on the layer of plasma polymerized fluoropolymer to define the pattern, the layer then having exposed fluoropolymer areas defining the pattern and unexposed fluoropolymer areas; and removing the unexposed fluoropolymer areas to leave only the pattern on the face of the substrate. According to an alternative, the process comprises: depositing the layer of negative electron beam resist on a face of a substrate; producing an electron beam; moving the electron beam on the layer of negative electron beam resist to define the pattern, the layer then having exposed resist areas defining the pattern and unexposed resist areas; treating the patterned layer with a base solution to decrease a dry etch resistance of the unexposed resist areas; and dry etching the unexposed resist areas to leave only the pattern on the face of the substrate.
摘要翻译: 用于制造负电子束抗蚀剂图案的方法包括:在基板的表面上沉积等离子体聚合的氟聚合物层,等离子体聚合的含氟聚合物形成负电子束抗蚀剂; 产生电子束; 将等离子体聚合的氟聚合物层上的电子束移动以限定图案,然后该层具有限定图案和未曝光的含氟聚合物区域的暴露的含氟聚合物区域; 并除去未曝光的含氟聚合物区域,仅留下基材表面上的图案。 根据替代方案,该方法包括:在衬底的表面上沉积负电子束抗蚀剂层; 产生电子束; 将电子束移动到负电子束抗蚀剂层上以限定图案,然后该层具有限定图案和未曝光抗蚀剂区域的曝光的抗蚀剂区域; 用基底溶液处理图案化层以降低未曝光的抗蚀剂区域的耐干蚀刻电阻; 并且干燥地蚀刻未曝光的抗蚀剂区域,以仅留下衬底的表面上的图案。
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