公开(公告)号：US20030015417A1

公开(公告)日：2003-01-23

申请号：US09683597

申请日：2002-01-23

Applicant: Semitool, Inc.

Inventor： Dakin Fulton ,  Thomas L. Ritzdorf

IPC: B23H007/04 ,  B23H003/02 ,  B23H007/14 ,  C25B009/00 ,  C25B009/04 ,  C25B015/00 ,  C25C003/16 ,  C25C003/20 ,  C25D017/00 ,  C25D021/12 ,  C25F007/00 ,  G01N001/00 ,  G01N021/00 ,  G01N031/00 ,  G01N033/00 ,  G01N015/06 ,  G01N033/48 ,  G04C023/00

CPC classification number: C25D21/14 ,  G05D11/133 ,  Y10T436/11

Abstract: An automated chemical management system for managing the chemical content of an electrochemical bath used to deposit a material on the surface of a microelectronic workpiece is set forth. The automated chemical management system includes a dosing system that is adapted to dose an amount of one or more chemicals to replenish a given electrochemical bath constituent in accordance with a predetermined dosing equation. The chemical management system also includes an analytical measurement system that is adapted to provide a measurement result indicative of the amount of the given constituent in the electrochemical bath at predetermined time intervals. The chemical management system uses the measurement results to modify the dosing equation of the dosing system. In this manner, the replenishment operations executed by the chemical management system are effectively refined over time thereby providing more accurate control of the amount of the target constituent in the electrochemical bath.

公开(公告)号：US20020004301A1

公开(公告)日：2002-01-10

申请号：US09815931

申请日：2001-03-23

Applicant: Semitool, Inc.

Inventor： Linlin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz JR.

IPC: H01L021/44

CPC classification number: H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

Abstract: Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

Abstract translation: 公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。 该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。 根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。 接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。 提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。 在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。 提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。