公开(公告)号：US20010042689A1

公开(公告)日：2001-11-22

申请号：US09885232

申请日：2001-06-20

Applicant: Semitool, Inc.

Inventor： Linlin Chen

IPC: C25D005/18 ,  C25D005/02 ,  C25D005/10 ,  C25D003/38

CPC classification number: C25D7/123 ,  C23C28/322 ,  C23C28/34 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  H05K3/423

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

公开(公告)号：US20040092065A1

公开(公告)日：2004-05-13

申请号：US10695419

申请日：2003-10-27

Applicant: Semitool, Inc.

Inventor： Linlin Chen ,  Thomas Taylor

IPC: H01L021/4763

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  H05K3/423

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

公开(公告)号：US20030155249A1

公开(公告)日：2003-08-21

申请号：US10302711

申请日：2002-11-22

Applicant: Semitool, Inc.

Inventor： Linlin Chen ,  Thomas Taylor

IPC: C25D005/54 ,  C25D017/00

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  H05K3/423

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

公开(公告)号：US20020074233A1

公开(公告)日：2002-06-20

申请号：US09885451

申请日：2001-06-20

Applicant: Semitool, Inc.

Inventor： Thomas L. Ritzdorf ,  E. Henry Stevens ,  Linlin Chen ,  Lyndon W. Graham ,  Curt Dundas

IPC: C25D005/18 ,  C25D007/12 ,  C25D011/32 ,  C25D005/50 ,  C25D017/00

CPC classification number: H01L21/67173 ,  C25D5/022 ,  C25D5/50 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/6723 ,  H01L21/76838 ,  H01L21/76877 ,  H01L21/76883

Abstract: A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

Abstract translation: 阐述了在金属化的微电子工件（例如半导体晶片）的表面处填充凹陷微结构的方法。 根据该方法，金属层通过诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。 沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。 还提出了用于执行独特退火工艺的各种新型装置。

公开(公告)号：US20020004301A1

公开(公告)日：2002-01-10

申请号：US09815931

申请日：2001-03-23

Applicant: Semitool, Inc.

Inventor： Linlin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz JR.

IPC: H01L021/44

CPC classification number: H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

Abstract: Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

Abstract translation: 公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。 该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。 根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。 接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。 提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。 在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。 提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。

公开(公告)号：US20040035710A1

公开(公告)日：2004-02-26

申请号：US10446047

申请日：2003-05-28

Applicant: Semitool, Inc.

Inventor： Linlin Chen ,  Thomas Taylor

IPC: C25D005/02

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  H05K3/423

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

公开(公告)号：US20040035708A1

公开(公告)日：2004-02-26

申请号：US10417086

申请日：2003-04-17

Applicant: Semitool, Inc.

Inventor： Linlin Chen ,  Thomas Taylor

IPC: C25D005/02

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  H05K3/423

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.