摘要:
A portable terminal is provided, in which a hinge device provides a pair of hinge axes extended in parallel, a pair of folding cases are engaged with the hinge device and rotate upon the hinge axes, respectively, and sliding housings are installed in the respective folding cases. The folding cases rotate in a folding direction or in an unfolding direction via the hinge device, and when the folding cases rotate, the sliding housings slide on the folding cases. When the sliding housings are opened at 180° with respect to each other, one end of the sliding housing is in a close relationship with one end of another sliding housing.
摘要:
A portable terminal with a pair of housings is provided, in which a guide rib is formed in a first housing for providing a reception groove, a first hinge member is engaged with the first housing for rotating upon a first hinge axis extended along a length direction of the first housing, a second hinge member is formed in a second housing and includes a hinge housing extended along a width direction of the second housing, and an additional device is accommodated in the hinge housing.
摘要:
Provided is a portable terminal including a first housing, a second housing, and a hinge apparatus rotatably coupling the first housing and the second housing. The hinge apparatus includes a hinge housing fixed to the first housing, a hinge member fixed to the second housing and coupled to the hinge housing, the hinge member rotating around a hinge axis which extends perpendicular to a surface of the first housing, an interference protrusion provided on one of the hinge housing and the hinge member, and a stopper groove formed in the other of the hinge housing and the hinge member wherein the hinge member rotates around the hinge axis while being spaced apart from the hinge housing.
摘要:
A cradling apparatus for a portable communication device which sets a cradling angle and provides a sense of click engagement to cradle a housing at a plurality of angles. The cradling apparatus includes a first housing, a second housing cradled at a slant angle while facing the first housing, and a cradling portion provided between the first housing and the second housing such that the cradling portion sets a cradling angle to cradle the second housing at a selected one of a plurality of cradling angles with respect to the first housing and further provides a sense of click engagement.
摘要:
A method of fabricating a bottom chassis is provided. The method of fabricating the bottom chassis includes, for example, forming a bottom chassis using a steel plate having a thickness in the range of 0.5 mm to 0.9 mm, the steel plate having a stack structure including an inner layer containing 0.001 to 0.1 weight percent (wt. %) carbon (C), 0.002 to 0.05 wt. % silicon (Si), 0.28 to 2.0 wt. % manganese (Mn), balance iron (Fe), and other impurities, an electro-galvanized layer formed on the inner layer, and a polymer chromium (Cr)-free contamination resistant layer formed on the electro-galvanized layer, and performing a burring process and a tapping process on the bottom chassis to form a burring part to receive a bolt for an engagement.
摘要:
A portable communication device that cradles a first and a second display units at a same angle, and a slide-type cradling apparatus thereof are disclosed. The portable communication device includes: a first housing; a second housing including a first display unit and facing the first housing when being slid and cradled at a known incline angle; and a third housing including a second display unit, and being introduced into the first housing before the second housing is slid and being withdrawn from the first housing after the second housing is slid such that the second housing is inclined and the third housing is inclined in an extension direction of the second housing.
摘要:
A semiconductor device having a contact barrier for insulating contacts with a large aspect ratio and having a fine pitch between adjacent conductive lines and a method of manufacturing the same are provided. The semiconductor device includes a buried contact formed in a region between two adjacent first conductive lines and two adjacent second conductive lines. Insulating lines define a width of the buried contact. To form the contact barrier, an interlayer dielectric layer formed on the second conductive lines is patterned to form a space and an insulating line having an etching ratio different from the interlayer dielectric layer is formed in the space. The interlayer dielectric layer is selectively wet etched relative to an insulating layer covering the second conductive line and the first insulating line to form buried contact hole. The buried contact hole is filled with conductive material to form a buried contact.
摘要:
Wafer structures and wafer bonding methods are provided. In some embodiments, a wafer bonding method includes providing a conductive wafer and a plurality of insulating wafers, the conductive wafer being larger than the insulating wafers; performing a pre-treatment operation on the conductive wafer, the insulating wafers, or both; and directly bonding the insulating wafers to the conductive wafer.
摘要:
The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portionconnected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.
摘要:
A process for formation of a large area flat panel display, and particularly a process for formation of a large area flat panel display using a side junction is disclosed, in which a large area is achieved by utilizing a side junction. More specifically, there is provided a process for formation of a thin film transistor liquid crystal display which can be used on all kinds of flat panel displays which uses glass as the substrate. The process for formation of a large area flat panel display utilizing a side junction according to the present invention includes the steps of: applying a side junction process on thin film transistor unit panels 2 so as to obtain a large area; and coupling a common electrode panel with said large area thin film transistor panel formed through said side junction process.