摘要:
An epoxy resin composition for encapsulating a semiconductor device and a semiconductor device, the composition including an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and an additive, wherein the epoxy resin includes an epoxy resin represented by Formula 1:
摘要:
An epoxy resin composition includes: an epoxy resin; a curing agent; a curing accelerator; and an inorganic filler, wherein the curing accelerator includes a 4-valent ammonium salt or a 4-valent phosphonium salt represented by Formula 1, wherein A1 is nitrogen or phosphorus; R1, R2, R3 and R4 are each independently a substituted or unsubstituted C1 to C30 hydrocarbon group, or a substituted or unsubstituted C1 to C30 hydrocarbon group including a hetero atom; X1, X2, X3, X4, X5 and X6 are each independently an oxygen atom (O), a sulfur atom (S), or NH; and Y1, Y2 and Y3 are each independently a substituted or unsubstituted C1 to C30 hydrocarbon group, or a substituted or unsubstituted C1 to C30 hydrocarbon group including a hetero atom.
摘要:
A method and apparatus for blocking harmful multimedia information are provided. The apparatus for blocking harmful multimedia information includes: a harmful information classification model training unit analyzing multimedia training information whose grade of harmfulness is known in advance, extracting characteristics from the information, and then by applying machine training, generating a harmful information classification model; a harmful information grade classification unit determining a harmfulness grade of multimedia input information by using the harmful information classification model; and a harmful information blocking unit blocking the multimedia input information if the determined harmfulness grade of the multimedia input information is included in a preset range. According to the method and apparatus, the increase of databases containing harmful multimedia information can be prevented and the time taken for determining harmfulness can be reduced.
摘要:
A backlight driving circuit for an LCD device is disclosed, in which multiple high-voltage parts each having an inverter circuit are provided, and the plurality of high-voltage parts are dispersedly arranged at both rear sides of an LCD panel. The distribution of the high voltage parts obtains a uniform temperature dispersion in the LCD device, and the lifespan of the LCD is therefore enhanced.
摘要:
A quaternary phosphonium salt, an epoxy resin composition including the quaternary phosphonium salt, and a semiconductor device encapsulated with the epoxy resin composition, the quaternary phosphonium salt being represented by Formula 1:
摘要:
An epoxy resin composition for encapsulating a semiconductor device includes a curing agent, a curing accelerator, inorganic fillers, and an epoxy resin, the epoxy resin including a first resin represented by Formula 1: wherein R1 and R2 are each independently hydrogen or a C1 to C4 linear or branched alkyl group, and n is a value from 1 to 9 on average.
摘要:
Disclosed herein is an interdigitation-type diffractive light modulator. In the interdigitation-type diffractive light modulator of the present invention, each of a pair of ribbons has a plurality of diffractive branches which are arranged in a comb shape, and the diffractive branches of the ribbons interdigitate with each other. Furthermore, the respective ribbons moves upwards and downwards or, alternatively, one ribbon moves upwards and downwards, so that the diffractive branches of the ribbons which interdigitate with each other form a stepped structure, thus diffracting incident light.
摘要:
The present invention relates, in general, to a light modulator having a variable blaze diffraction grating and, more particularly, to a light modulator having a variable blaze diffraction grating, in which a diffraction member rotates due to piezoelectric force so as to incline a reflective surface.
摘要:
A method for fabricating a semiconductor device is disclosed in which a doping depth of an ion implanted dopant is prevented from being increased during annealing, so as to form a junction having a depth of 20 nm or below without any problem in the technology of 65 nm or below. The method includes the steps of a) implanting ions into a silicon substrate provided with a predetermined structure, b) applying tensile stress to a surface of the substrate, and c) annealing the substrate.
摘要:
There is provided a method and an apparatus for forming an adherent metal-thin film on a polymer substrate in a simple and efficient manner, wherein said film has a superior adhesion to the polymer substrate. In accordance with the method of the present invention, a metal film may be deposited on a polymer substrate with implanting plasma ions in a polymer substrate so as to form a gradient interfacial layer in which the metal and polymer particles are mixed between metal and polymer layers, thereby markedly enhancing the adhesion of a metal film to a polymer substrate.