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1.发明授权MEMS vibrating structure using a single-crystal piezoelectric thin-film layer having domain inversions 有权使用具有畴倒置的单晶压电薄膜层的MEMS振动结构公开(公告)号：US08035280B2
公开(公告)日：2011-10-11
申请号：US13037584
申请日：2011-03-01
IPC分类号： H01L41/08
CPC分类号： H03H9/2405 , H03H9/02228 , H03H9/02275 , H03H2009/241
摘要： The present invention relates to a micro-electro-mechanical systems (MEMS) vibrating structure supported by a MEMS anchor system, and includes a single-crystal piezoelectric thin-film layer having domain inversions, which determine certain vibrational characteristics of the MEMS vibrating structure. The MEMS vibrating structure may have dominant lateral vibrations or dominant thickness vibrations. The single-crystal piezoelectric thin-film layer may include Lithium Tantalate or Lithium Niobate, and may provide MEMS vibrating structures with precise sizes and shapes, which may provide high accuracy and enable fabrication of multiple resonators having different resonant frequencies on a single substrate.
摘要翻译： 微机电系统技术领域本发明涉及由MEMS锚定系统支撑的微电子机械系统（MEMS）振动结构，并且包括确定MEMS振动结构的某些振动特性的具有畴反转的单晶压电薄膜层。 MEMS振动结构可能具有主要的横向振动或主要厚度振动。 单晶压电薄膜层可以包括钽酸锂或铌酸锂，并且可以提供具有精确尺寸和形状的MEMS振动结构，其可以提供高精度并且能够在单个衬底上制造具有不同谐振频率的多个谐振器。
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2.发明申请MEMS VIBRATING STRUCTURE USING A SINGLE-CRYSTAL PIEZOELECTRIC THIN-FILM LAYER HAVING DOMAIN INVERSIONS 有权使用具有域反转的单晶压电薄膜层的MEMS振动结构公开(公告)号：US20110148252A1
公开(公告)日：2011-06-23
申请号：US13037584
申请日：2011-03-01
IPC分类号： H01L41/04
CPC分类号： H03H9/2405 , H03H9/02228 , H03H9/02275 , H03H2009/241
摘要： The present invention relates to a micro-electro-mechanical systems (MEMS) vibrating structure supported by a MEMS anchor system, and includes a single-crystal piezoelectric thin-film layer having domain inversions, which determine certain vibrational characteristics of the MEMS vibrating structure. The MEMS vibrating structure may have dominant lateral vibrations or dominant thickness vibrations. The single-crystal piezoelectric thin-film layer may include Lithium Tantalate or Lithium Niobate, and may provide MEMS vibrating structures with precise sizes and shapes, which may provide high accuracy and enable fabrication of multiple resonators having different resonant frequencies on a single substrate.
摘要翻译： 微机电系统技术领域本发明涉及由MEMS锚定系统支撑的微电子机械系统（MEMS）振动结构，并且包括确定MEMS振动结构的某些振动特性的具有畴反转的单晶压电薄膜层。 MEMS振动结构可能具有主要的横向振动或主要厚度振动。 单晶压电薄膜层可以包括钽酸锂或铌酸锂，并且可以提供具有精确尺寸和形状的MEMS振动结构，其可以提供高精度并且能够在单个衬底上制造具有不同谐振频率的多个谐振器。
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3.发明授权公开(公告)号：US07586239B1
公开(公告)日：2009-09-08
申请号：US12134483
申请日：2008-06-06
IPC分类号： H01L41/08
CPC分类号： H03H9/02338 , H03H3/0072 , H03H9/02275 , H03H9/2436 , H03H2009/02496 , H03H2009/241 , H03H2009/2442
摘要： The present invention relates to a micro-electro-mechanical systems (MEMS) vibrating structure having dominant lateral vibrations supported by a MEMS anchor system, and includes a single-crystal piezoelectric thin-film layer that has been grown with a specific crystal orientation. Since the MEMS vibrating structure has dominant lateral vibrations, its resonant frequency may be controlled by its size and shape, rather than layer thickness, which provides high accuracy and enables multiple resonators having different resonant frequencies on a single substrate.
摘要翻译： 微机电系统（MEMS）振动结构技术领域本发明涉及由MEMS锚系统支撑的主要侧向振动的微电子机械系统（MEMS）振动结构，并且包括已经以特定的晶体取向生长的单晶压电薄膜层。 由于MEMS振动结构具有主要的横向振动，其谐振频率可以通过其尺寸和形状而不是层厚度来控制，其提供高精度并且使得在单个基板上具有不同谐振频率的多个谐振器。
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公开(公告)号：US20130020279A1
公开(公告)日：2013-01-24
申请号：US13598962
申请日：2012-08-30
CPC分类号： B81C1/00476 , Y10T29/42
摘要： A method of forming a device is provided. The method includes providing a substrate, forming a sacrificial layer over the substrate, and forming a field layer around the sacrificial layer. After formation, both the sacrificial layer and the field layer are planarized. A component is then formed over the planarized sacrificial layer and the planarized field layer. The component has a first electrode and a second electrode and a single crystal wafer disposed between the first and second electrodes. The component includes anchors disposed substantially over the field layer. Once the component is formed, the sacrificial layer is released with an etchant having a selectivity for the sacrificial layer wherein a cavity is formed beneath the component. The cavity allows free movement within the cavity during operation of the device. The etchant does not release the field layer and the component so the field layer remains below the anchors.
摘要翻译： 提供了一种形成装置的方法。 该方法包括提供衬底，在衬底上形成牺牲层，以及在牺牲层周围形成场层。 在形成之后，牺牲层和场层都被平坦化。 然后在平坦化的牺牲层和平坦化的场层上形成一个分量。 该部件具有设置在第一和第二电极之间的第一电极和第二电极以及单晶晶片。 该部件包括基本上设置在场层上的锚。 一旦形成了部件，牺牲层就可以用对牺牲层具有选择性的蚀刻剂来释放，其中在部件之下形成空腔。 空腔允许在设备操作期间在空腔内自由移动。 蚀刻剂不释放场层和组分，因此场层保持在锚点下方。
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公开(公告)号：US08278802B1
公开(公告)日：2012-10-02
申请号：US12429455
申请日：2009-04-24
IPC分类号： H01L21/00
CPC分类号： B81C1/00476 , Y10T29/42
摘要： A method of forming a device is provided. The method includes providing a substrate, forming a sacrificial layer over the substrate, and forming an field layer around the sacrificial layer. After formation, both the sacrificial layer and the field layer are planarized. A component is then formed over the planarized sacrificial layer and the planarized field layer. The component has a first electrode and a second electrode and a single crystal wafer disposed between the first electrode and the second electrode. The component also includes anchors disposed substantially over the field layer. Once the component is formed, the sacrificial layer is released with an etchant having a selectivity for the sacrificial layer such that a cavity is formed beneath the component. The cavity allows free movement component within the cavity during operation of the device. In addition, the etchant does not release the field layer and the component such that the field layer remains below the anchors.
摘要翻译： 提供了一种形成装置的方法。 该方法包括提供衬底，在衬底上形成牺牲层，以及在牺牲层周围形成场层。 在形成之后，牺牲层和场层都被平坦化。 然后在平坦化的牺牲层和平坦化的场层上形成一个分量。 该部件具有设置在第一电极和第二电极之间的第一电极和第二电极以及单晶晶片。 该部件还包括基本上设置在场层上的锚。 一旦形成了部件，牺牲层就被用于对牺牲层具有选择性的蚀刻剂释放，使得在部件之下形成空腔。 空腔在设备运行期间允许空腔内的自由运动部件。 此外，蚀刻剂不会释放场层和组件，使得场层保持在锚点下方。
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公开(公告)号：US09369105B1
公开(公告)日：2016-06-14
申请号：US12202624
申请日：2008-09-02
IPC分类号： H03H3/02 , H01L41/04 , H03H9/02 , H03H9/05 , H01L41/047 , H01L41/053 , H01L41/29 , H01L41/311 , H03H9/15
CPC分类号： H03H3/02 , H01L41/047 , H01L41/053 , H01L41/29 , H01L41/311 , H03H3/0076 , H03H9/02015 , H03H9/02062 , H03H9/0207 , H03H9/0542 , H03H9/0547 , H03H9/17 , H03H2009/02283 , H03H2009/02299 , H03H2009/155 , Y10T29/42 , Y10T29/49005 , Y10T29/49147 , Y10T29/49155
摘要： A method for making a micro-electro-mechanical systems (MEMS) vibrating structure is disclosed. The MEMS is supported by a MEMS anchor system and includes a single-crystal piezoelectric thin-film layer that has a specific non-standard crystal orientation, which may be selected to increase an electromechanical coupling coefficient, decrease a temperature coefficient of frequency, or both. The MEMS vibrating structure may have dominant lateral vibrations or dominant thickness vibrations. The single-crystal piezoelectric thin-film layer may include Lithium Tantalate or Lithium Niobate, and may provide MEMS vibrating structures with precise sizes and shapes, which may provide high accuracy and enable fabrication of multiple resonators having different resonant frequencies on a single substrate.
摘要翻译： 公开了一种制造微电子机械系统（MEMS）振动结构的方法。 MEMS由MEMS锚系统支撑，并且包括具有特定非标准晶体取向的单晶压电薄膜层，其可以被选择以增加机电耦合系数，降低频率的温度系数或两者 。 MEMS振动结构可能具有主要的横向振动或主要厚度振动。 单晶压电薄膜层可以包括钽酸锂或铌酸锂，并且可以提供具有精确尺寸和形状的MEMS振动结构，其可以提供高精度并且能够在单个衬底上制造具有不同谐振频率的多个谐振器。
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公开(公告)号：US07898158B1
公开(公告)日：2011-03-01
申请号：US12263883
申请日：2008-11-03
CPC分类号： H03H9/2405 , H03H9/02228 , H03H9/02275 , H03H2009/241
摘要： The present invention relates to a micro-electro-mechanical systems (MEMS) vibrating structure supported by a MEMS anchor system, and includes a single-crystal piezoelectric thin-film layer having domain inversions, which determine certain vibrational characteristics of the MEMS vibrating structure. The MEMS vibrating structure may have dominant lateral vibrations or dominant thickness vibrations. The single-crystal piezoelectric thin-film layer may include Lithium Tantalate or Lithium Niobate, and may provide MEMS vibrating structures with precise sizes and shapes, which may provide high accuracy and enable fabrication of multiple resonators having different resonant frequencies on a single substrate.
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公开(公告)号：US07750759B1
公开(公告)日：2010-07-06
申请号：US12112278
申请日：2008-04-30
申请人： Seungbae Lee , Kushal Bhattacharjee
发明人： Seungbae Lee , Kushal Bhattacharjee
CPC分类号： H03H9/2452 , H03H9/462 , H03H9/485 , H03H2009/02496
摘要： The present invention relates to a multi-mode micro-electromechanicalsystems (MEMS) resonator system that may provide low motional resistance and a high quality factor by using a resonating structure that includes multiple parallel-coupled longitudinally resonating bodies, each of which has multiple resonating segments adjacent to one another along an axis. The multi-mode MEMS resonator system may provide high acoustic velocity by using the micro-structure of MEMS technology. The multi-mode MEMS resonator system may include electrostatic transducers, piezoelectric transducers, or both. The present invention includes multiple embodiments that may include different configurations of the resonating structure.
摘要翻译： 本发明涉及通过使用包括多个并联耦合纵向谐振体的谐振结构来提供低运动电阻和高品质因数的多模式微机电系统（MEMS）谐振器系统，其中每个具有多个谐振段 沿轴线彼此相邻。 多模MEMS谐振器系统可以通过使用MEMS技术的微结构来提供高声速。 多模MEMS谐振器系统可以包括静电换能器，压电换能器或两者。 本发明包括可以包括谐振结构的不同配置的多个实施例。
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9.发明授权Substrate supporting units and substrate treating apparatuses including the same 有权基板支撑单元和包括该支撑单元的基板处理装置公开(公告)号：US08901459B2
公开(公告)日：2014-12-02
申请号：US13535005
申请日：2012-06-27
申请人： Wonhaeng Lee , Seungbae Lee
发明人： Wonhaeng Lee , Seungbae Lee
CPC分类号： H01L21/67103
摘要： Provided is a substrate supporting unit, which includes a support plate on which a substrate is placed, and a heating member disposed within the support plate to heat the support plate. The heating member includes a plurality of first heating wires disposed in a first region of the support plate, and a plurality of second heating wires disposed in a second region of the support plate, which is different from the first region. The first heating wires are connected to each other through one of a series connection and a parallel connection, and the second heating wires are connected to each other through the other of the series connection and the parallel connection.
摘要翻译： 提供了一种基板支撑单元，其包括其上放置基板的支撑板和设置在支撑板内以加热支撑板的加热构件。 所述加热构件包括设置在所述支撑板的第一区域中的多个第一加热丝，以及设置在所述支撑板的与所述第一区域不同的第二区域中的多个第二加热线。 第一加热线通过串联连接和并联连接而彼此连接，第二加热线通过串联和并联中的另一个相互连接。
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公开(公告)号：US5649807A
公开(公告)日：1997-07-22
申请号：US593431
申请日：1996-01-29
申请人： Seungbae Lee , Jin-kyu Choi
发明人： Seungbae Lee , Jin-kyu Choi
IPC分类号： F04D29/38
CPC分类号： F04D29/384 , Y10S416/02
摘要： A structure of a ventilation fan provided with a plurality of blades has a performance curve characterized by a gentle slope throughout the wide operating range instead of an S-hysteresis curve, in order to overcome a fluctuation phenomena of the operating flow rate. The blade tip cross-section lies on a first imaginary cylindrical surface and an angle of attack and pitch angle of the blade tip are formed as respective trajections by intersecting the first cylindrical surface by a second cylindrical surface whose center axis has been rotated about two axes.
摘要翻译： 设置有多个叶片的通风扇的结构具有特征在于整个宽操作范围内的平缓斜率而不是S形滞后曲线的性能曲线，以克服操作流量的波动现象。 叶片尖端横截面位于第一假想圆柱形表面上，并且叶片尖端的迎角和俯仰角通过与第一圆柱形表面相交而形成为相应的外形，第二圆柱形表面的中心轴线绕两个轴线旋转 。
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