公开(公告)号：US08012887B2

公开(公告)日：2011-09-06

申请号：US12489234

申请日：2009-06-22

申请人： Shankar Venkataraman ,  Hiroshi Hamana ,  Manuel A. Hernandez ,  Nitin K. Ingle ,  Paul Edward Gee

发明人： Shankar Venkataraman ,  Hiroshi Hamana ,  Manuel A. Hernandez ,  Nitin K. Ingle ,  Paul Edward Gee

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： H01L21/31612 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/76224

摘要： Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.

摘要翻译： 在衬底上沉积氧化硅层的方法包括使含硅前体，氧化气体，水和添加剂前体流入处理室，使得在衬底表面上实现均匀的氧化硅生长速率。 根据实施例生长的氧化硅层的表面可以在与添加剂前体一起生长时具有减小的粗糙度。 在本公开的其他方面中，通过使含硅前体，氧化气体，水和添加剂前体流入处理室，将硅氧化物层沉积在具有表面上的沟槽的图案化衬底上，使得沟槽填充有 氧化硅填充材料内的空隙的数量和/或尺寸减小。

公开(公告)号：US20100159711A1

公开(公告)日：2010-06-24

申请号：US12489234

申请日：2009-06-22

申请人： Shankar Venkataraman ,  Hiroshi Hamana ,  Manuel A. Hernandez ,  Nitin K. Ingle ,  Paul Edward Gee

发明人： Shankar Venkataraman ,  Hiroshi Hamana ,  Manuel A. Hernandez ,  Nitin K. Ingle ,  Paul Edward Gee

IPC分类号： H01L21/31 ,  H01L21/762

CPC分类号： H01L21/31612 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/76224

摘要： Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.

摘要翻译： 在衬底上沉积氧化硅层的方法包括使含硅前体，氧化气体，水和添加剂前体流入处理室，使得在衬底表面上实现均匀的氧化硅生长速率。 根据实施例生长的氧化硅层的表面可以在与添加剂前体一起生长时具有减小的粗糙度。 在本公开的其他方面中，通过使含硅前体，氧化气体，水和添加剂前体流入处理室，将硅氧化物层沉积在具有表面上的沟槽的图案化衬底上，使得沟槽填充有 氧化硅填充材料内的空隙的数量和/或尺寸减小。

公开(公告)号：US08664127B2

公开(公告)日：2014-03-04

申请号：US13182671

申请日：2011-07-14

申请人： Sidharth Bhatia ,  Hiroshi Hamana ,  Paul Edward Gee ,  Shankar Venkataraman

发明人： Sidharth Bhatia ,  Hiroshi Hamana ,  Paul Edward Gee ,  Shankar Venkataraman

IPC分类号： H01L21/00

CPC分类号： H01L21/76224 ,  B82Y10/00 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271

摘要： Aspects of the disclosure pertain to methods of depositing silicon oxide layers on substrates. In embodiments, silicon oxide layers are deposited by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor and a second silicon-containing precursor, having both a Si—C bond and a Si—N bond, into a semiconductor processing chamber to form a conformal liner layer. Upon completion of the liner layer, a gap fill layer is formed by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor into the semiconductor processing chamber. The presence of the conformal liner layer improves the ability of the gap fill layer to grow more smoothly, fill trenches and produce a reduced quantity and/or size of voids within the silicon oxide filler material.

摘要翻译： 本公开的方面涉及在衬底上沉积氧化硅层的方法。 在实施例中，通过将具有Si-O键的含硅前体，含氧前体和具有Si-C键和Si-N键的第二含硅前体流过，沉积氧化硅层， 半导体处理室以形成保形衬里层。 在衬里层完成时，通过将具有Si-O键的含硅前体，含氧前体流入半导体处理室来形成间隙填充层。 保形衬垫层的存在提高了间隙填充层更平稳地生长，填充沟槽并且在氧化硅填料材料内产生减少量和/或尺寸的空隙的能力。

公开(公告)号：US08476142B2

公开(公告)日：2013-07-02

申请号：US13052238

申请日：2011-03-21

申请人： Sasha Kweskin ,  Hiroshi Hamana ,  Paul Edward Gee ,  Shankar Venkataraman ,  Kadar Sapre

发明人： Sasha Kweskin ,  Hiroshi Hamana ,  Paul Edward Gee ,  Shankar Venkataraman ,  Kadar Sapre

IPC分类号： H01L21/76

CPC分类号： H01L21/76229 ,  H01L21/67017

摘要： Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a silicon oxide layer followed by a more porous (and more rapidly etched) second portion of the silicon oxide layer. Narrow trenches are filled with dense material whereas open areas are covered with a layer of dense material and more porous material. Dielectric material in wider trenches may be removed at this point with a wet etch while the dense material in narrow trenches is retained.

摘要翻译： 本公开的方面涉及优先用氧化硅填充窄沟槽而不完全填充较宽的沟槽和/或开放区域的方法。 在实施例中，通过使含硅前体和臭氧流入处理室来沉积电介质层，使得氧化硅层的相对致密的第一部分，随后是氧化硅层的更多孔（并且更快蚀刻）的第二部分 。 狭窄的沟槽填充有致密的材料，而开放区域被一层致密材料和更多孔的材料覆盖。 在较宽的沟槽中的电介质材料可以在这一点用湿法蚀刻去除，而狭窄沟槽中的致密材料被保留。

公开(公告)号：US20120094468A1

公开(公告)日：2012-04-19

申请号：US13182671

申请日：2011-07-14

申请人： Sidharth Bhatia ,  Hiroshi Hamana ,  Paul Edward Gee ,  Shankar Venkataraman

发明人： Sidharth Bhatia ,  Hiroshi Hamana ,  Paul Edward Gee ,  Shankar Venkataraman

IPC分类号： H01L21/762 ,  B82Y40/00

CPC分类号： H01L21/76224 ,  B82Y10/00 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271

摘要： Aspects of the disclosure pertain to methods of depositing silicon oxide layers on substrates. In embodiments, silicon oxide layers are deposited by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor and a second silicon-containing precursor, having both a Si—C bond and a Si—N bond, into a semiconductor processing chamber to form a conformal liner layer. Upon completion of the liner layer, a gap fill layer is formed by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor into the semiconductor processing chamber. The presence of the conformal liner layer improves the ability of the gap fill layer to grow more smoothly, fill trenches and produce a reduced quantity and/or size of voids within the silicon oxide filler material.

摘要翻译： 本公开的方面涉及在衬底上沉积氧化硅层的方法。 在实施例中，通过将具有Si-O键的含硅前体，含氧前体和具有Si-C键和Si-N键的第二含硅前体流过，沉积氧化硅层， 半导体处理室以形成保形衬里层。 在衬里层完成时，通过将具有Si-O键的含硅前体，含氧前体流入半导体处理室来形成间隙填充层。 保形衬垫层的存在提高了间隙填充层更平稳地生长，填充沟槽并且在氧化硅填料材料内产生减少量和/或尺寸的空隙的能力。

公开(公告)号：US20110250731A1

公开(公告)日：2011-10-13

申请号：US13052238

申请日：2011-03-21

申请人： Sasha Kweskin ,  Hiroshi Hamana ,  Paul Edward Gee ,  Shankar Venkataraman ,  Kadar Sapre

发明人： Sasha Kweskin ,  Hiroshi Hamana ,  Paul Edward Gee ,  Shankar Venkataraman ,  Kadar Sapre

IPC分类号： H01L21/762

CPC分类号： H01L21/76229 ,  H01L21/67017

摘要： Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a silicon oxide layer followed by a more porous (and more rapidly etched) second portion of the silicon oxide layer. Narrow trenches are filled with dense material whereas open areas are covered with a layer of dense material and more porous material. Dielectric material in wider trenches may be removed at this point with a wet etch while the dense material in narrow trenches is retained.

摘要翻译： 本公开的方面涉及优先用氧化硅填充窄沟槽而不完全填充较宽的沟槽和/或开放区域的方法。 在实施例中，通过使含硅前体和臭氧流入处理室来沉积电介质层，使得氧化硅层的相对致密的第一部分，随后是氧化硅层的更多孔（并且更快蚀刻）的第二部分 。 狭窄的沟槽填充有致密的材料，而开放区域被一层致密材料和更多孔的材料覆盖。 在较宽的沟槽中的电介质材料可以在这一点用湿法蚀刻去除，而狭窄沟槽中的致密材料被保留。

公开(公告)号：US20100264110A1

公开(公告)日：2010-10-21

申请号：US12808698

申请日：2008-01-31

申请人： Katsuaki Sumimiya ,  Hiroshi Hamana

发明人： Katsuaki Sumimiya ,  Hiroshi Hamana

IPC分类号： B65D41/04 ,  B65D53/00

CPC分类号： B65D41/045

摘要： The present invention provides a cap capable of improving sealing performance of a container, and suited for use in the case where the internal pressure of the container is high, for example, when the contents of the container is carbonated beverage, and a container having the cap.The present invention includes a cap main body having a top wall and a skirt wall pending from an outer circumferential part of the top wall, the skirt wall being provided with an internal thread that comes in screw engagement with an external thread of a container mouth part, and a gasket made of synthetic resin for hermetically sealing the container mouth part, wherein the gasket has a top plate that comes in abutment with a distal end part of the container mouth part to cover the distal end part, and an annular inner leg pending from the top plate, adapted to close fit with an inner circumferential face of the container mouth part, and an outer circumferential edge of the top plate is continuously formed with an annular bent part that bends downward with respect to the top plate and has the inner circumferential face covering an outer circumferential face of the container mouth part, and the cap main body has a biasing part that biases an outer circumferential face of the bent part of the gasket in a closed state, so that the biased bent part elastically deforms to be pushed against the outer circumferential face of the container mouth part.

摘要翻译： 本发明提供一种能够提高容器的密封性能的盖，适用于容器的内部压力高的情况下，例如当容器的内容物为碳酸饮料时，具有 帽。 本发明包括一个帽主体，其具有从顶壁的外周部分悬挂的顶壁和裙壁，裙壁设置有内螺纹，该内螺纹与容器口部的外螺纹接合 以及由合成树脂制成的用于密封容器口部的密封垫，其中所述垫圈具有顶盖，所述顶板与所述容器口部的远端部抵接以覆盖所述远端部，以及环形内腿等待 从顶板适合与容器口部的内周面紧密配合，顶板的外周缘连续地形成有相对于顶板向下弯曲的环状弯曲部， 覆盖容器口部的外周面的圆周面，帽主体具有偏压弯曲部的外周面的偏置部， 使得偏压弯曲部弹性变形以推压在容器口部的外周面上。

公开(公告)号：US5308888A

公开(公告)日：1994-05-03

申请号：US20399

申请日：1993-02-22

申请人： Shin Nishimura ,  Akira Nagai ,  Akio Takahashi ,  Akio Mukoo ,  Tadashi Narita ,  Tokio Hagiwara ,  Hiroshi Hamana ,  Junichi Katagiri

发明人： Shin Nishimura ,  Akira Nagai ,  Akio Takahashi ,  Akio Mukoo ,  Tadashi Narita ,  Tokio Hagiwara ,  Hiroshi Hamana ,  Junichi Katagiri

IPC分类号： C08F136/16 ,  H05K1/03 ,  C08J3/28

CPC分类号： C08F136/16 ,  H05K1/034

摘要： According to the present invention, there is provided a resin composition which can provide an insulating resin having excellent heat resistance and flame retardance after curing and showing a low dielectric constant.A fluorine-containing photo-setting resin composition comprising a polymer containing fluorine or a fluorine-containing group represented by general formula [II]: ##STR1## wherein R.sup.1 and R.sup.2 are selected from the group consisting of H, F, CH.sub.3 and CF.sub.3 ; R.sup.3 and R.sup.4 are selected from the group consisting of CH.sub.2 and CF.sub.2 ; x and y show 0 to 4 and m shows 30 to 1000, and a photopolymerization initiator, which is a solid at ambient temperature, melts between 100.degree. and 150.degree. C., has a melt viscosity of not greater than 10.sup.6 poise and is photocurable.

摘要翻译： 根据本发明，提供一种树脂组合物，其可以提供具有优异的耐热性和固化后的阻燃性并显示低介电常数的绝缘树脂。 含氟聚合物的含氟光固化树脂组合物，其含有通式[II]表示的氟或含氟基团的聚合物：其中R 1和R 2选自H，F，CH 3 和CF3; R3和R4选自CH2和CF2; x和y表示0〜4，m表示30〜1000，环境温度为固体的光聚合引发剂在100〜150℃之间熔融，熔融粘度不大于106泊，为光固化 。

公开(公告)号：US4613657A

公开(公告)日：1986-09-23

申请号：US826585

申请日：1986-02-06

申请人： Tadashi Narita ,  Tokio Hagiwara ,  Hiroshi Hamana

发明人： Tadashi Narita ,  Tokio Hagiwara ,  Hiroshi Hamana

IPC分类号： C08F20/00 ,  C08F2/06 ,  C08F4/06 ,  C08F4/08 ,  C08F20/10 ,  C08F20/16 ,  C08F20/22 ,  C08F20/24 ,  C08F120/24 ,  C08F14/18

CPC分类号： C08F120/24

摘要： A methanol-insoluble homopolymer of an .alpha.-trifluoromethylacrylate, which has either an alkyl group or a fluorine-containing alkyl group in the ester radical, is formed at good yields in an organic aprotic solvent by using an alkali metal alkoxide, e.g. lithium t-butoxide, as anionic polymerization catalyst.

摘要翻译： 通过使用碱金属醇盐例如在有机非质子传递溶剂中以良好的收率形成在酯基中具有烷基或含氟烷基的α-三氟甲基丙烯酸酯的甲醇不溶性均聚物。 叔丁醇锂，作为阴离子聚合催化剂。

公开(公告)号：US08365934B2

公开(公告)日：2013-02-05

申请号：US12746562

申请日：2008-09-26

申请人： Hiroshi Hamana ,  Atsushi Miyagi

发明人： Hiroshi Hamana ,  Atsushi Miyagi

IPC分类号： B65D41/34

CPC分类号： B65D41/3428 ,  B65D41/0421

摘要： A synthetic resin cap includes a top wall, a skirt wall, and a tamper evidence band connected to the skirt wall with bridges interposed therebetween. An inner face of the top wall includes an annular inner leg, an annular projection, and an annular outer leg. An intermediate part of the inner leg has a substantially constant transverse thickness in a vertical direction. Inner and outer circumferential faces of the intermediate part have substantially the same curvature of longitudinal section and are arcuate and convex inwardly in a radial direction, and an outer circumferential face of a distal end part of the inner leg has a guide face that guides the container mouth part, and the intermediate part is inclined radially outwardly so that an upper end of the guide face is shifted radially inwardly by 0.1 to 0.6 mm when the inner leg is inserted in the container mouth part.

摘要翻译： 合成树脂盖包括顶壁，裙壁和连接到裙壁的篡改证据带，其间插入有桥。 顶壁的内表面包括环形内腿，环形突起和环形外腿。 内腿的中间部分在垂直方向上具有基本恒定的横向厚度。 中间部分的内周面和外周面具有基本相同的纵向曲率，并且在径向方向上呈弧形和向内凸出，并且内腿的远端部分的外周面具有引导面 并且中间部分径向向外倾斜，使得当内腿插入容器口部时，引导面的上端径向向内移动0.1至0.6mm。