公开(公告)号：US08012887B2

公开(公告)日：2011-09-06

申请号：US12489234

申请日：2009-06-22

申请人： Shankar Venkataraman ,  Hiroshi Hamana ,  Manuel A. Hernandez ,  Nitin K. Ingle ,  Paul Edward Gee

发明人： Shankar Venkataraman ,  Hiroshi Hamana ,  Manuel A. Hernandez ,  Nitin K. Ingle ,  Paul Edward Gee

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： H01L21/31612 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/76224

摘要： Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.

摘要翻译： 在衬底上沉积氧化硅层的方法包括使含硅前体，氧化气体，水和添加剂前体流入处理室，使得在衬底表面上实现均匀的氧化硅生长速率。 根据实施例生长的氧化硅层的表面可以在与添加剂前体一起生长时具有减小的粗糙度。 在本公开的其他方面中，通过使含硅前体，氧化气体，水和添加剂前体流入处理室，将硅氧化物层沉积在具有表面上的沟槽的图案化衬底上，使得沟槽填充有 氧化硅填充材料内的空隙的数量和/或尺寸减小。

公开(公告)号：US20100159711A1

公开(公告)日：2010-06-24

申请号：US12489234

申请日：2009-06-22

申请人： Shankar Venkataraman ,  Hiroshi Hamana ,  Manuel A. Hernandez ,  Nitin K. Ingle ,  Paul Edward Gee

发明人： Shankar Venkataraman ,  Hiroshi Hamana ,  Manuel A. Hernandez ,  Nitin K. Ingle ,  Paul Edward Gee

IPC分类号： H01L21/31 ,  H01L21/762

CPC分类号： H01L21/31612 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/76224

摘要： Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.

摘要翻译： 在衬底上沉积氧化硅层的方法包括使含硅前体，氧化气体，水和添加剂前体流入处理室，使得在衬底表面上实现均匀的氧化硅生长速率。 根据实施例生长的氧化硅层的表面可以在与添加剂前体一起生长时具有减小的粗糙度。 在本公开的其他方面中，通过使含硅前体，氧化气体，水和添加剂前体流入处理室，将硅氧化物层沉积在具有表面上的沟槽的图案化衬底上，使得沟槽填充有 氧化硅填充材料内的空隙的数量和/或尺寸减小。

公开(公告)号：US20120015113A1

公开(公告)日：2012-01-19

申请号：US12835574

申请日：2010-07-13

申请人： Zhong Qiang Hua ,  Lei Luo ,  Manuel A. Hernandez ,  Shankar Venkataraman

发明人： Zhong Qiang Hua ,  Lei Luo ,  Manuel A. Hernandez ,  Shankar Venkataraman

IPC分类号： C23C16/513

CPC分类号： C23C16/513 ,  C23C16/401 ,  C23C16/44

摘要： A method for forming a multi-layer silicon oxide film on a substrate includes performing a deposition cycle that comprises depositing a silicon oxide layer using a thermal chemical vapor deposition (CVD) process and depositing a silicon oxide layer using a plasma enhanced chemical vapor deposition (PECVD) process. The deposition cycle is repeated a specified number of times to form the multi-layer silicon oxide film comprising a plurality of silicon oxide layers formed using the thermal CVD process and a plurality of silicon oxide layers formed using the PECVD process. Each silicon oxide layer formed using the thermal CVD process is adjacent to at least one silicon oxide layer formed using the PECVD process.

摘要翻译： 在衬底上形成多层氧化硅膜的方法包括执行沉积循环，其包括使用热化学气相沉积（CVD）工艺沉积氧化硅层，并使用等离子体增强化学气相沉积法沉积氧化硅层（ PECVD）过程。 沉积循环重复规定次数以形成包含使用热CVD工艺形成的多个氧化硅层和使用PECVD工艺形成的多个氧化硅层的多层氧化硅膜。 使用热CVD工艺形成的每个氧化硅层与使用PECVD工艺形成的至少一个氧化硅层相邻。

公开(公告)号：US08114761B2

公开(公告)日：2012-02-14

申请号：US12843726

申请日：2010-07-26

申请人： Tushar V. Mandrekar ,  Shankar Venkataraman ,  Zhong Qiang Hua ,  Manuel A. Hernandez

发明人： Tushar V. Mandrekar ,  Shankar Venkataraman ,  Zhong Qiang Hua ,  Manuel A. Hernandez

IPC分类号： H01L21/00

CPC分类号： H01L21/2256 ,  H01L29/66803

摘要： Methods for doping a non-planar structure by forming a conformal doped silicon glass layer on the non-planar structure are disclosed. A substrate having the non-planar structure formed thereon is positioned in chemical vapor deposition process chamber to deposit a conformal SACVD layer of doped glass (e.g. BSG or PSG). The substrate is then exposed to RTP or laser anneal step to diffuse the dopant into the non-planar structure and the doped glass layer is then removed by etching.

摘要翻译： 公开了通过在非平面结构上形成共形掺杂的硅玻璃层来掺杂非平面结构的方法。 将其上形成有非平面结构的基板放置在化学气相沉积处理室中以沉积掺杂玻璃（例如BSG或PSG）的共形SACVD层。 然后将衬底暴露于RTP或激光退火步骤以将掺杂剂扩散到非平面结构中，然后通过蚀刻去除掺杂的玻璃层。

公开(公告)号：US20110129990A1

公开(公告)日：2011-06-02

申请号：US12843726

申请日：2010-07-26

申请人： Tushar V. Mandrekar ,  Shankar Venkataraman ,  Zhong Qiang Hua ,  Manuel A. Hernandez

发明人： Tushar V. Mandrekar ,  Shankar Venkataraman ,  Zhong Qiang Hua ,  Manuel A. Hernandez

IPC分类号： H01L21/22

CPC分类号： H01L21/2256 ,  H01L29/66803

摘要： Methods for doping a non-planar structure by forming a conformal doped silicon glass layer on the non-planar structure are disclosed. A substrate having the non-planar structure formed thereon is positioned in chemical vapor deposition process chamber to deposit a conformal SACVD layer of doped glass (e.g. BSG or PSG). The substrate is then exposed to RTP or laser anneal step to diffuse the dopant into the non-planar structure and the doped glass layer is then removed by etching.

摘要翻译： 公开了通过在非平面结构上形成共形掺杂的硅玻璃层来掺杂非平面结构的方法。 将其上形成有非平面结构的基板放置在化学气相沉积处理室中以沉积掺杂玻璃（例如BSG或PSG）的共形SACVD层。 然后将衬底暴露于RTP或激光退火步骤以将掺杂剂扩散到非平面结构中，然后通过蚀刻去除掺杂的玻璃层。

公开(公告)号：US20080186633A1

公开(公告)日：2008-08-07

申请号：US11704017

申请日：2007-02-07

申请人： Manuel A. Hernandez ,  Yen Fu ,  Ellis T. Cha

发明人： Manuel A. Hernandez ,  Yen Fu ,  Ellis T. Cha

IPC分类号： G11B5/56

CPC分类号： G11B5/455

摘要： In a method and apparatus for testing a head-gimbal assembly (HGA), a HGA is placed in contact with force transducers mounted on a rotational stage. The force transducers are adjusted to position the transducers around a rotational center of the rotational stage. The rotational stage is rotated, and the torque and variations in torque exerted by the HGA on the force transducers during rotation are measured.

摘要翻译： 在用于测试头部万向节组件（HGA）的方法和装置中，HGA被放置成与安装在旋转台上的力换能器接触。 调节力传感器以使换能器绕旋转台的旋转中心定位。 旋转台被旋转，并且测量在旋转期间由HGA施加在力传感器上的扭矩和扭矩的变化。

公开(公告)号：US5949615A

公开(公告)日：1999-09-07

申请号：US839421

申请日：1997-04-14

申请人： Manuel A. Hernandez

发明人： Manuel A. Hernandez

IPC分类号： G11B5/49 ,  G11B5/48 ,  G11B21/02 ,  G11B21/16

CPC分类号： G11B5/4833

摘要： The improved disk drive system has an improved head gimbal assembly having a mounting plate with an attachment portion for attachment to an actuator arm and a distal end for mounting the read/write heads, or load beam assemblies, thereto. The mounting portion and distal end of the mounting plate are vertically offset such that when the attachment portion is attached to the actuator arm, the distal end of the mounting plate is centered between opposing sides of adjacent disks, thereby permitting a smaller spacing between adjacent disks. The new swage type connection between the mounting plate and the actuator arm has a hole in the actuator arm and has a spud located on the attachment portion of the mounting plate. The spud has a cylinder having an outer diameter such that the cylinder can fit inside the actuator arm hole. A distal end of the cylinder has a lip protruding inwardly from an inside diameter of the cylinder. The cylinder has a length such that when the cylinder is inserted into the actuator arm hole, the lip and the distal end of the cylinder extend beyond the thickness of the actuator arm around the actuator arm hole so that when the spud is swaged while in the actuator arm hole, the lip and the distal end of the cylinder expand into an area outside the actuator arm hole.

摘要翻译： 改进的磁盘驱动器系统具有改进的磁头万向架组件，其具有安装板，该安装板具有用于附接到致动器臂的附接部分和用于将读/写头或负载梁组件安装到其上的远端。 安装板的安装部分和远端垂直偏移，使得当附接部分附接到致动器臂时，安装板的远端在相邻盘的相对侧之间居中，从而允许相邻盘之间的间隔更小 。 安装板和致动器臂之间的新的型锻型连接件在致动器臂中具有一个孔，并且具有位于安装板的附接部分上的定位销。 喷嘴具有具有外径的圆筒，使得圆筒可以装配在致动器臂孔内。 气缸的远端具有从气缸的内径向内突出的唇部。 气缸具有这样的长度，使得当气缸插入致动器臂孔中时，气缸和气缸的远端延伸超过致动器臂的致动器臂孔周围的厚度，使得当在第 执行器臂孔，唇缘和气缸的远端扩展到致动器臂孔外部的区域。

公开(公告)号：US20090120584A1

公开(公告)日：2009-05-14

申请号：US12059820

申请日：2008-03-31

申请人： Dmitry Lubomirsky ,  Toan Q. Tran ,  Lun Tsuei ,  Manuel A. Hernandez ,  Kirby H. Floyd ,  Ellie Y. Yieh

发明人： Dmitry Lubomirsky ,  Toan Q. Tran ,  Lun Tsuei ,  Manuel A. Hernandez ,  Kirby H. Floyd ,  Ellie Y. Yieh

IPC分类号： C23F1/08 ,  B05C13/00 ,  B05C15/00 ,  H01L21/677 ,  B05C21/00

CPC分类号： H01L21/6719 ,  H01L21/67017 ,  H01L21/68742 ,  H01L21/68792

摘要： A semiconductor processing system is described. The system includes a processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure. The system also includes a pumping system coupled to the chamber and adapted to remove material from the processing chamber. The system further includes a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the processing chamber is provided which is rigidly and sometimes rotatably coupled to the substrate support shaft. A motor coupled to the bracket can be actuated to vertically translate the substrate support pedestal, shaft and bracket from a first position to a second position closer to a processing plate. A piston mounted on an end of the bracket provides a counter-balancing force to a tilting force, where the tilting force is generated by a change in the internal chamber pressure and causes a deflection in the position of the bracket and the substrate support. The counter-balancing force reduces the deflection of the bracket and the substrate support.

摘要翻译： 描述半导体处理系统。 该系统包括具有能够将内部室压力保持在环境大气压力以下的内部的处理室。 该系统还包括耦合到腔室并适于从处理室移除材料的泵送系统。 该系统还包括基板支撑基座，其中基板支撑基座刚性地联接到延伸穿过处理室的壁的基板支撑轴。 提供位于处理室外部的支架，其刚性且有时可旋转地联接到基板支撑轴。 耦合到支架的马达可以被致动以将基板支撑基座，轴和托架从第一位置垂直平移到靠近处理板的第二位置。 安装在支架的端部上的活塞提供与倾斜力的反平衡力，其中倾斜力由内部室压力的变化产生，并且引起支架和基板支撑件的位置的偏转。 反平衡力减小了支架和基板支架的挠曲。

公开(公告)号：US07506552B2

公开(公告)日：2009-03-24

申请号：US11704017

申请日：2007-02-07

申请人： Manuel A. Hernandez ,  Yen Fu ,  Ellis T. Cha

发明人： Manuel A. Hernandez ,  Yen Fu ,  Ellis T. Cha

IPC分类号： G01L3/02 ,  G01L3/00

CPC分类号： G11B5/455

摘要： In a method and apparatus for testing a head-gimbal assembly (HGA), a HGA is placed in contact with force transducers mounted on a rotational stage. The force transducers are adjusted to position the transducers around a rotational center of the rotational stage. The rotational stage is rotated, and the torque and variations in torque exerted by the HGA on the force transducers during rotation are measured.

摘要翻译： 在用于测试头部万向节组件（HGA）的方法和装置中，HGA被放置成与安装在旋转台上的力换能器接触。 调节力传感器以使换能器绕旋转台的旋转中心定位。 旋转台被旋转，并且测量在旋转期间由HGA施加在力传感器上的扭矩和扭矩的变化。

公开(公告)号：US06916227B2

公开(公告)日：2005-07-12

申请号：US10287910

申请日：2002-11-04

申请人： Niraj Mahadev ,  Manuel A. Hernandez

发明人： Niraj Mahadev ,  Manuel A. Hernandez

IPC分类号： B24B9/06 ,  B24B21/00 ,  B24B37/04 ,  G11B5/10 ,  B24B1/00

CPC分类号： G11B5/102 ,  B24B9/065 ,  B24B21/004 ,  B24B37/048 ,  Y10T29/49034

摘要： A system and method are described for processing a slider (e.g., one to be used in a disk drive apparatus). Corners of the sliders are abraded while still a part of a row of sliders in a part-off operation. By abrading the corners of the sliders, head slap events between the slider and the recording media result in less damage to the recording media and less particulate matter from the slider being left on the recording media, improving data integrity for the recording media.

摘要翻译： 描述了用于处理滑块（例如，用于磁盘驱动装置中的滑块）的系统和方法。 滑块的角部磨损，同时仍然是一排滑块的一部分，分开操作。 通过研磨滑块的角部，滑块和记录介质之间的头部拍打事件导致对记录介质的损害较小，并且较少的颗粒物质从滑块留在记录介质上，从而提高了记录介质的数据完整性。