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    Method for manufacturing semiconductor substrate
    5.
    发明授权
    Method for manufacturing semiconductor substrate 有权
    半导体衬底的制造方法

    公开(公告)号：US08263478B2

    公开(公告)日：2012-09-11

    申请号：US12805582

    申请日：2010-08-06

    申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

    发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

    摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.

    摘要翻译： 将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。 氢离子注入，形成氢离子注入边界12。 单晶Si衬底10和低熔点玻璃衬底20结合在一起。 键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。 此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。 然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。 可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

    Method for producing single crystal silicon solar cell and single crystal silicon solar cell
    6.
    发明授权
    Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
    单晶硅太阳能电池和单晶硅太阳能电池的制造方法

    公开(公告)号：US08227290B2

    公开(公告)日：2012-07-24

    申请号：US11976026

    申请日：2007-10-19

    申请人： Atsuo Ito ,  Shoji Akiyama ,  Masahiro Furuya ,  Makoto Kawai ,  Koichi Tanaka ,  Yoshihiro Kubota ,  Yuuji Tobisaka

    发明人： Atsuo Ito ,  Shoji Akiyama ,  Masahiro Furuya ,  Makoto Kawai ,  Koichi Tanaka ,  Yoshihiro Kubota ,  Yuuji Tobisaka

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1804 ,  H01L31/0682 ,  H01L31/186 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent adhesive while using the ion implanting surface as a bonding surface; curing the transparent adhesive; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate; forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer; forming pluralities of individual electrodes on the pluralities of first and second conductivity-type regions, respectively; and forming collector electrodes for the individual electrodes, respectively.

    摘要翻译： 一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将离子注入单晶硅衬底; 通过透明粘合剂将单晶硅衬底和透明绝缘体衬底彼此紧密接触，同时使用离子注入表面作为结合表面; 固化透明胶; 对离子注入层施加冲击以使单晶硅衬底机械分层; 在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电型区域和第二导电类型区域存在于单晶硅的分层表面 层; 在多个第一和第二导电类型区域上分别形成多个单独的电极; 并分别形成各个电极的集电极。

    Method for producing single crystal silicon solar cell and single crystal silicon solar cell
    7.
    发明授权
    Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
    单晶硅太阳能电池和单晶硅太阳能电池的制造方法

    公开(公告)号：US08227289B2

    公开(公告)日：2012-07-24

    申请号：US11976020

    申请日：2007-10-19

    申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

    发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

    IPC分类号： H01L21/00

    CPC分类号： H01L31/186 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate; conducting a surface activating treatment for at least one of: the ion implanting surface of the single crystal silicon substrate, and a surface of the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the transparent insulator substrate to each other, such that the surface(s) subjected to the surface activating treatment is/are used as a bonding surface(s); applying an impact to the ion implanted layer; and forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer.

    摘要翻译： 一种单晶硅太阳能电池的制造方法，包括以下步骤：将离子注入单晶硅衬底; 对所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底的表面中的至少一个进行表面活化处理; 将单晶硅衬底和透明绝缘体衬底的离子注入表面彼此接合，使得经过表面活化处理的表面被用作粘合表面; 对离子注入层施加冲击; 并且在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电型区域和第二导电类型区域存在于单晶层的分层表面 硅层。

    Method of manufacturing single crystal silicon solar cell and single crystal silicon solar cell
    8.
    发明授权
    Method of manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
    单晶硅太阳能电池和单晶硅太阳能电池的制造方法

    公开(公告)号：US08119903B2

    公开(公告)日：2012-02-21

    申请号：US11984182

    申请日：2007-11-14

    申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

    发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

    IPC分类号： H01L31/04 ,  H01L31/0216 ,  B05D5/12

    CPC分类号： H01L31/1804 ,  H01L31/022441 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    摘要： There is disclosed a single crystal silicon solar cell includes the steps of: implanting hydrogen ions or rare gas ions to a single crystal silicon substrate; performing surface activation on at least one of an ion-implanted surface of the single crystal silicon substrate and a surface of a transparent insulator substrate; bonding the ion-implanted surface of the single crystal silicon substrate and the transparent insulator substrate with the surface-activated surface being set as a bonding surface; applying an impact onto the ion implanted layer to mechanically delaminate the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion regions having a second conductivity type on the delaminated plane side of the single crystal silicon layer; forming a plurality of first conductivity type regions and a plurality of second conductivity type regions on the delaminated plane of the single crystal silicon layer; and forming a light reflection film that covers the plurality of first conductivity type regions and the plurality of second conductivity type regions. There can be provided an optical confinement type single crystal silicon solar cell where a thin-film light conversion layer is made of high-crystallinity single crystal silicon.

    摘要翻译： 公开了一种单晶硅太阳能电池，包括以下步骤：将氢离子或稀有气体离子注入单晶硅衬底; 在单晶硅衬底的离子注入表面和透明绝缘体衬底的表面中的至少一个上进行表面活化; 将所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底接合，所述表面激活表面被设置为接合表面; 对离子注入层施加冲击以机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层平面侧形成具有第二导电类型的多个扩散区; 在单晶硅层的分层面上形成多个第一导电型区域和多个第二导电型区域; 以及形成覆盖所述多个第一导电类型区域和所述多个第二导电类型区域的光反射膜。 可以提供一种光限制型单晶硅太阳能电池，其中薄膜光转换层由高结晶度单晶硅制成。

    Heating element
    9.
    发明授权
    Heating element 有权
    加热元件

    公开(公告)号：US08115141B2

    公开(公告)日：2012-02-14

    申请号：US11783580

    申请日：2007-04-10

    申请人： Noboru Kimura ,  Yoshihiro Kubota ,  Waichi Yamamura ,  Shoji Kano

    发明人： Noboru Kimura ,  Yoshihiro Kubota ,  Waichi Yamamura ,  Shoji Kano

    IPC分类号： F27D11/00 ,  C23C16/00

    CPC分类号： H01L21/67103 ,  H01L21/67098 ,  H05B3/143 ,  H05B2203/003

    摘要： There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p having a nitrogen gas permeability of 1×10−2 cm2/sec or less or being made of a compound containing a dopant formed on the protection layer 4. There can be provided a heating element in which a corrosion-resistant layer whose nitrogen gas permeability, resistivity, or hardness are controlled is formed on a protection layer and through which the corrosive gas is difficult to be transmitted even under an environment of a high temperature and a corrosive gas and by which degradation due to corrosion of a conductive layer, particularly, a power-supply-terminal portion can be avoided and additionally which can fulfill a high function as an electrostatic chuck even when having a chuck pattern and which has a long operation life and is capable of being produced at a low cost.

    摘要翻译： 公开了一种加热元件10，其包括：至少一个耐热底座件1; 导电层3，其具有形成在耐热基底构件上的加热器图案3a; 在导电层上形成具有绝缘性的保护层4; 以及氮气渗透率为1×10 -2 cm 2 / sec以下的耐腐蚀层4p，或由保护层4上形成的含有掺杂剂的化合物构成。可以提供一种加热元件，其中腐蚀 氮气渗透性，电阻率或硬度被控制的耐热层形成在保护层上，即使在高温环境和腐蚀性气体环境下腐蚀性气体也难以透过，腐蚀性降低 导电层，特别是电源端子部分，可以避免和附加地，即使当具有卡盘图案并且具有长的使用寿命并且能够在 低成本。

    Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell
    10.
    发明授权
    Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
    单晶硅太阳能电池和单晶硅太阳能电池的制造方法

    公开(公告)号：US08106290B2

    公开(公告)日：2012-01-31

    申请号：US12073437

    申请日：2008-03-05

    申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

    发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

    IPC分类号： H01L31/00 ,  H01L21/00

    CPC分类号： H01L31/056 ,  H01L21/76254 ,  H01L31/03921 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for manufacturing a single crystal silicon solar cell includes implanting either hydrogen ions or rare-gas ions into a single crystal silicon substrate; bringing the single crystal silicon substrate in close contact with a transparent insulator substrate via a transparent adhesive, with the ion-implanted surface being a bonding surface; curing the transparent adhesive; mechanically delaminating the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type in the delaminated surface side of the single crystal silicon layer, and causing a plurality of areas of a first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of individual electrodes on each one of the plurality of areas of the first conductivity type and on each one of the plurality of areas of the second conductivity type; forming a collector electrode for the plurality of individual electrodes on the plurality of areas of the first conductivity type, and a collector electrode for the plurality of individual electrodes on the plurality of areas of the second conductivity type; and forming a light-reflecting film.

    摘要翻译： 制造单晶硅太阳能电池的方法包括将氢离子或稀土离子注入到单晶硅衬底中; 使单晶硅衬底通过透明粘合剂与透明绝缘体衬底紧密接触，离子注入表面是接合表面; 固化透明胶; 机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电类型的扩散区域，并且使多个第一导电类型的区域和第二导电类型的多个区域存在于分层的 单晶硅层表面; 在第一导电类型的多个区域中的每一个区域和第二导电类型的多个区域中的每一个区域上形成多个单独电极中的每一个; 在所述第一导电类型的多个区域上形成用于所述多个单独电极的集电极，以及在所述第二导电类型的多个区域上的所述多个单独电极的集电极; 并形成光反射膜。