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1.发明申请公开(公告)号：US20130010824A1
公开(公告)日：2013-01-10
申请号：US13611099
申请日：2012-09-12
CPC分类号： H01S5/2081 , B82Y20/00 , H01S5/02288 , H01S5/026 , H01S5/0265 , H01S5/12 , H01S5/2201 , H01S5/3202 , H01S5/3211 , H01S5/34306
摘要： A semiconductor optical integrated device includes a first semiconductor optical device formed over a (001) plane of a substrate and a second semiconductor optical device which is formed over the (001) plane of the substrate in a (110) orientation from the first semiconductor optical device and which is optically connected to the first semiconductor optical device. The first semiconductor optical device includes a first core layer and a first clad layer which is formed over the first core layer and which has a crystal surface on a side on a second semiconductor optical device side that forms an angle θ greater than or equal to 55 degrees and less than or equal to 90 degrees with the (001) plane.
摘要翻译： 半导体光学集成器件包括形成在衬底的（001）平面上的第一半导体光学器件和第二半导体光学器件，所述第二半导体光学器件形成在从第一半导体光学器件（110）取向的衬底的（001）面上 并且其光学连接到第一半导体光学器件。 第一半导体光学器件包括第一芯层和形成在第一芯层上并且在形成角度的第二半导体光学器件侧的侧面上的晶体表面的第一覆盖层; 大于或等于55度且小于或等于90度与（001）面。
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2.发明授权公开(公告)号：US08565279B2
公开(公告)日：2013-10-22
申请号：US13611099
申请日：2012-09-12
IPC分类号： H01S5/00
CPC分类号： H01S5/2081 , B82Y20/00 , H01S5/02288 , H01S5/026 , H01S5/0265 , H01S5/12 , H01S5/2201 , H01S5/3202 , H01S5/3211 , H01S5/34306
摘要： A semiconductor optical integrated device includes a first semiconductor optical device formed over a (001) plane of a substrate and a second semiconductor optical device which is formed over the (001) plane of the substrate in a (110) orientation from the first semiconductor optical device and which is optically connected to the first semiconductor optical device. The first semiconductor optical device includes a first core layer and a first clad layer which is formed over the first core layer and which has a crystal surface on a side on a second semiconductor optical device side that forms an angle θ greater than or equal to 55 degrees and less than or equal to 90 degrees with the (001) plane.
摘要翻译： 半导体光学集成器件包括形成在衬底的（001）平面上的第一半导体光学器件和第二半导体光学器件，所述第二半导体光学器件形成在从第一半导体光学器件（110）取向的衬底的（001）面上 并且其光学连接到第一半导体光学器件。 第一半导体光学器件包括第一芯层和第一覆层，其形成在第一芯层上，并且在第二半导体光学器件侧上具有形成角度θ大于或等于55°的一侧的晶体表面 度和小于或等于90度与（001）面。
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公开(公告)号：US07539385B2
公开(公告)日：2009-05-26
申请号：US11979136
申请日：2007-10-31
申请人： Ayahito Uetake , Tatsuya Takeuchi
发明人： Ayahito Uetake , Tatsuya Takeuchi
IPC分类号： G02B6/10
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/026 , H01S5/1085 , H01S5/16 , H01S5/2201 , H01S5/2224 , H01S5/2275 , H01S5/3211 , H01S5/34306 , H01S5/34373 , H01S5/50 , H01S2304/04
摘要： An optical semiconductor, includes a semiconductor substrate having a (100) principal surface, a waveguide mesa stripe formed on a first region of the semiconductor substrate, the waveguide mesa stripe guiding a light therethrough; a plurality of dummy mesa patterns formed on the semiconductor substrate in a second region at a forward side of the first region, and a semi-insulating buried semiconductor layer formed on the semiconductor substrate so as to cover the first and second regions continuously, the semi-insulating buried semiconductor layer filling a right side and a left side of the waveguide mesa stripe in the first region and a gap between the plurality of dummy mesa patterns in the second region.
摘要翻译： 光学半导体包括具有（100）主表面的半导体衬底，形成在所述半导体衬底的第一区域上的波导台面条，所述波导台面条引导光通过; 在第一区域的前侧的第二区域中形成在半导体衬底上的多个虚拟台面图案，以及形成在半导体衬底上以半导体衬底连续覆盖第一和第二区域的半绝缘掩埋半导体层，半 - 绝缘半导体层，其填充所述第一区域中的所述波导台面条的右侧和左侧以及所述第二区域中的所述多个虚拟台面图案之间的间隙。
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公开(公告)号：US20060220001A1
公开(公告)日：2006-10-05
申请号：US11366597
申请日：2006-03-03
申请人： Ayahito Uetake , Hiroji Ebe , Kenichi Kawaguchi
发明人： Ayahito Uetake , Hiroji Ebe , Kenichi Kawaguchi
IPC分类号： H01L31/00
CPC分类号： H01S5/341 , B82Y10/00 , B82Y20/00 , H01S5/3218 , H01S5/3404 , H01S5/3412 , H01S5/34373
摘要： A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a semiconductor crystal having a second lattice constant formed on the barrier layer and a side barrier layer of a semiconductor crystal having a third lattice constant, which is formed in contact with the side faces of the plurality of quantum dots, in which the barrier layer, the quantum dots and the side barrier layer are configured so that the difference between the values of the first lattice constant and the second lattice constant has a sign opposite to that of the difference between values of the first lattice constant and the third lattice constant.
摘要翻译： 包括量子点的半导体器件包括具有第一晶格常数的半导体晶体的阻挡层和包含在阻挡层上形成的具有第二晶格常数的半导体晶体的多个量子点的量子点层和形成在阻挡层上的侧阻挡层 具有第三晶格常数的半导体晶体，其形成为与多个量子点的侧面接触，其中阻挡层，量子点和侧阻挡层被构造成使得 第一晶格常数和第二晶格常数具有与第一晶格常数和第三晶格常数的值之差的符号。
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公开(公告)号：US07627212B2
公开(公告)日：2009-12-01
申请号：US12181448
申请日：2008-07-29
CPC分类号： H01S5/026 , G02B6/125 , G02B2006/121 , H01S5/4025 , H01S5/50
摘要： An optical integrated device includes an optical waveguide structure formed on a semiconductor substrate and including a plurality of first channel optical waveguide portions, an optical coupler portion and a second channel optical waveguide portion, a burying layer formed from a semi-insulating semiconductor material and burying the optical waveguide structure therein such that an upper portion thereof forms a flat face and a side portion thereof forms an inclined face having a predetermined angle with respect to the semiconductor substrate, and a plurality of dummy structure bodies provided over a desired region in the proximity of at least an output side of the optical coupler portion so that radiation light from the optical coupler portion is spatially separated from signal light propagating along the second channel optical waveguide portion. The plural dummy structure bodies are provided discretely so as to be buried flat by the burying layer.
摘要翻译： 光学集成器件包括形成在半导体衬底上并包括多个第一通道光波导部分的光波导结构，光耦合部分和第二通道光波导部分，由半绝缘半导体材料形成的掩埋层和埋入 其中的光波导结构使得其上部形成平坦面，并且其侧部形成相对于半导体衬底具有预定角度的倾斜面，以及设置在邻近的所需区域上的多个虚设结构体 至少一个光耦合器部分的输出侧，使得来自光耦合器部分的辐射光与沿着第二通道光波导部分传播的信号光在空间上分离。 多个虚拟结构体离散地设置成被埋入层平坦地埋设。
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公开(公告)号：US07456422B2
公开(公告)日：2008-11-25
申请号：US11366597
申请日：2006-03-03
申请人： Ayahito Uetake , Hiroji Ebe , Kenichi Kawaguchi
发明人： Ayahito Uetake , Hiroji Ebe , Kenichi Kawaguchi
CPC分类号： H01S5/341 , B82Y10/00 , B82Y20/00 , H01S5/3218 , H01S5/3404 , H01S5/3412 , H01S5/34373
摘要： A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a semiconductor crystal having a second lattice constant formed on the barrier layer and a side barrier layer of a semiconductor crystal having a third lattice constant, which is formed in contact with the side faces of the plurality of quantum dots, in which the barrier layer, the quantum dots and the side barrier layer are configured so that the difference between the values of the first lattice constant and the second lattice constant has a sign opposite to that of the difference between values of the first lattice constant and the third lattice constant.
摘要翻译： 包括量子点的半导体器件包括具有第一晶格常数的半导体晶体的阻挡层和包含在阻挡层上形成的具有第二晶格常数的半导体晶体的多个量子点的量子点层和形成在阻挡层上的侧阻挡层 具有第三晶格常数的半导体晶体，其形成为与多个量子点的侧面接触，其中阻挡层，量子点和侧阻挡层被构造成使得 第一晶格常数和第二晶格常数具有与第一晶格常数和第三晶格常数的值之差的符号。
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公开(公告)号：US20080175549A1
公开(公告)日：2008-07-24
申请号：US11979136
申请日：2007-10-31
申请人： Ayahito Uetake , Tatsuya Takeuchi
发明人： Ayahito Uetake , Tatsuya Takeuchi
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/026 , H01S5/1085 , H01S5/16 , H01S5/2201 , H01S5/2224 , H01S5/2275 , H01S5/3211 , H01S5/34306 , H01S5/34373 , H01S5/50 , H01S2304/04
摘要： An optical semiconductor, includes a semiconductor substrate having a (100) principal surface, a waveguide mesa stripe formed on a first region of the semiconductor substrate, the waveguide mesa stripe guiding a light therethrough; a plurality of dummy mesa patterns formed on the semiconductor substrate in a second region at a forward side of the first region, and a semi-insulating buried semiconductor layer formed on the semiconductor substrate so as to cover the first and second regions continuously, the semi-insulating buried semiconductor layer filling a right side and a left side of the waveguide mesa stripe in the first region and a gap between the plurality of dummy mesa patterns in the second region.
摘要翻译： 光学半导体包括具有（100）主表面的半导体衬底，形成在所述半导体衬底的第一区域上的波导台面条，所述波导台面条引导光通过; 在第一区域的前侧的第二区域中形成在半导体衬底上的多个虚拟台面图案，以及形成在半导体衬底上以半导体衬底连续覆盖第一和第二区域的半绝缘掩埋半导体层，半 - 绝缘半导体层，其填充所述第一区域中的所述波导台面条的右侧和左侧以及所述第二区域中的所述多个虚拟台面图案之间的间隙。
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