摘要:
An FS upper nitride film (15) is formed on the upper surface of an FS electrode (5). Therefore, the upper surface of the FS electrode (5) is not exposed even when an FS upper oxide film (41) is partially almost removed in the manufacturing process. Thus, a semiconductor device which prevents degradation in operation characteristics and reliability due to existence of an FS insulating layer can be provided.
摘要:
A semiconductor substrate and a method of fabricating a semiconductor device are provided. An oxide film (13) is formed by oxidizing an edge section and a lower major surface of an SOI substrate (10). This oxidizing step is performed in a manner similar to LOCOS (Local Oxide of Silicon) oxidation by using an oxide film (11) exposed on the edge section and lower major surface of the SOI substrate (10) as an underlying oxide film. Then, the thickness of the oxide film (13) is greater than that of the oxide film (11) on the edge section and lower major surface of the SOI substrate (10). The semiconductor substrate prevents particles of dust from being produced at the edge thereof.
摘要:
A semiconductor substrate and a method of fabricating a semiconductor device are provided. An oxide film (13) is formed by oxidizing an edge section and a lower major surface of an SOI substrate (10). This oxidizing step is performed in a manner similar to LOCOS (Local Oxide of Silicon) oxidation by using an oxide film (11) exposed on the edge section and lower major surface of the SOI substrate (10) as an underlying oxide film. Then, the thickness of the oxide film (13) is greater than that of the oxide film (11) on the edge section and lower major surface of the SOI substrate (10). The semiconductor substrate prevents particles of dust from being produced at the edge thereof.
摘要:
a method for producing a semiconductor device provided in such a manner that a first layer and a second layer are laminated to ensure that their TSVs are arranged in almost a straight line, including: first layer production steps including steps of preparing a substrate, forming a transistor of an input/output circuit on an upper surface of the substrate, forming an insulation layer so as to cover the transistor, and forming a TSV in the insulation layer; second layer production steps including steps of preparing a substrate, forming a transistor of a logic circuit on an upper surface of the substrate, forming an insulation layer so as to cover the transistor, and forming a TSV in the insulation layer; a connection step of connecting surfaces of the first layer and the second layer on a side opposite to substrates of the first layer and the second layer to ensure that the TSV of the first layer and the TSV of the second layer are arranged in almost a straight line; and a step of removing the substrate of the first layer.
摘要:
a method for producing a semiconductor device provided in such a manner that a first layer and a second layer are laminated to ensure that their TSVs are arranged in almost a straight line, including: first layer production steps including steps of preparing a substrate, forming a transistor of an input/output circuit on an upper surface of the substrate, forming an insulation layer so as to cover the transistor, and forming a TSV in the insulation layer; second layer production steps including steps of preparing a substrate, forming a transistor of a logic circuit on an upper surface of the substrate, forming an insulation layer so as to cover the transistor, and forming a TSV in the insulation layer; a connection step of connecting surfaces of the first layer and the second layer on a side opposite to substrates of the first layer and the second layer to ensure that the TSV of the first layer and the TSV of the second layer are arranged in almost a straight line; and a step of removing the substrate of the first layer.
摘要:
A semiconductor device includes a semiconductor substrate having a main surface, a MONOS-type memory cell formed over the main surface and having a channel, an n-channel transistor formed over the main surface, and a p-channel transistor formed over the man surface. Nitride films are formed in a manner to contact the top surfaces of the MONOS-type memory cell, the n-channel transistor, and the p-channel transistor. The nitride films apply stress to the channels of the MONOS-type memory cell, the n-channel transistor, and the p-channel transistor.
摘要:
A gate electrode is provided such that both ends thereof in a gate width direction are projected from an active region in plane view. Partial trench isolation insulation films are provided in a surface of an SOI substrate corresponding to lower parts of the both ends, and body contact regions are provided in the surface of the SOI substrate outside the both ends of the gate electrode in the gate width direction so as to be adjacent to the respective partial trench isolation insulation films. The body contact region and a body region are electrically connected through an SOI layer (well region) under the partial trench isolation insulation film. In addition, a source tie region in which P type impurity is doped in a relatively high concentration is provided in the surface of a source region in the vicinity of the center of the gate electrode in the gate width direction.
摘要:
A semiconductor device includes core transistors for forming a logic circuit, and I/O transistors for forming an input/output circuit. A distance from the main surface to a lowermost part of an n-type impurity region NR of the I/O n-type transistor is longer than that from the main surface to a lowermost part of an n-type impurity region NR of the core n-type transistor. A distance from the main surface to a lowermost part of a p-type impurity region PR of the I/O p-type transistor is longer than that from the main surface to a lowermost part of a p-type impurity region of the core p-type transistor. A distance from the main surface to the lowermost part of the n-type impurity region of the I/O n-type transistor is longer than that from the main surface to the lowermost part of the p-type impurity region of the I/O p-type transistor.
摘要翻译:半导体器件包括用于形成逻辑电路的核心晶体管和用于形成输入/输出电路的I / O晶体管。 从I / O型晶体管的n型杂质区NR的主表面到最下部的距离比从芯的n型杂质区NR的主表面到最下部的距离长 n型晶体管。 I / O p型晶体管的p型杂质区PR的主表面到最下部的距离比从芯p的p型杂质区的主表面到最下部的距离长 型晶体管。 从I / O型晶体管的n型杂质区域的主表面到最下部分的距离比从I / O的p型杂质区域的主表面到最下部分的长 p型晶体管。
摘要:
A heat treatment apparatus for a selenization process or a sulphurization process carried out when forming a light absorbing layer in a chalcopyrite-type solar cell, comprises a quartz tube in which a plurality of solar cell substrates is arranged in parallel at predetermined intervals in a thickness direction, a heating mechanism for heating atmospheric gas, which is arranged at an outside of the quartz tube, and first baffle plates arranged upward of the substrates, in which heated atmospheric gas, which rises along an inner surface of the quartz tube, is guided from upward to the center of the substrates.