公开(公告)号：US4433228A

公开(公告)日：1984-02-21

申请号：US319987

申请日：1981-11-10

申请人： Shigeru Nishimatsu ,  Keizo Suzuki ,  Noriyuki Sakudo ,  Ken Ninomiya ,  Hidemi Koike ,  Osami Okada ,  Shinjiro Katagiri ,  Sadayuki Okudaira

发明人： Shigeru Nishimatsu ,  Keizo Suzuki ,  Noriyuki Sakudo ,  Ken Ninomiya ,  Hidemi Koike ,  Osami Okada ,  Shinjiro Katagiri ,  Sadayuki Okudaira

IPC分类号： H01J25/50 ,  H01J27/16 ,  H01J37/08 ,  H01J37/317 ,  H01J37/32 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32211 ,  H01J37/32192 ,  H01J37/32293

摘要： The microwave plasma source of this invention comprises a vacuum room which forms a discharging space with discharge gas introduced therein, a means for conducting the microwave to the discharging space so that the microwave electric field is provided in the discharging space, and a means for providing the magnetic field in the discharging space located on the microwave propagating path and made up of a permanent magnet which virtually propagates the microwave.

摘要翻译： 本发明的微波等离子体源包括形成放电空间的真空室，其中引入有放电气体，用于将微波传导到放电空间的装置，使得微波电场设置在放电空间中，以及用于提供 位于微波传播路径上的放电空间中的磁场，并由实际上传播微波的永磁体组成。

公开(公告)号：US4579623A

公开(公告)日：1986-04-01

申请号：US642801

申请日：1984-08-21

申请人： Keizo Suzuki ,  Ken Ninomiya ,  Shigeru Nishimatsu ,  Sadayuki Okudaira ,  Osami Okada

发明人： Keizo Suzuki ,  Ken Ninomiya ,  Shigeru Nishimatsu ,  Sadayuki Okudaira ,  Osami Okada

IPC分类号： H01L21/205 ,  C23C16/511 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/318 ,  H01L21/3213 ,  H01L21/306 ,  B05B5/02 ,  B05D3/06 ,  B44C1/22

CPC分类号： H01J37/32935 ,  C23C16/511 ,  H01L21/30655 ,  H01L21/3185 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32137

摘要： A gas is introduced into a vacuum chamber after the vacuum chamber is evacuated, and a plasma is generated within at least part of the vacuum chamber. The specimen surface is exposed to the plasma so that the surface is treated. A plurality of different gases, such as SF.sub.6, N.sub.2, and the like, are used as the gas being introduced. The quantity of the gas is changed during the surface treatment. A controller is used as a mechanism for changing the quantity of gas introduced. The controller is operated in accordance with a predetermined program, or by signals obtained by detecting the surface conditions of the specimen during the surface treatment.

摘要翻译： 在真空室抽真空之后，将气体引入真空室中，并且在真空室的至少一部分内产生等离子体。 将样品表面暴露于等离子体，使得表面被处理。 使用多种不同的气体，例如SF 6，N 2等，作为被引入的气体。 在表面处理期间，气体的量变化。 控制器用作改变引入气体量的机构。 控制器根据预定的程序或通过在表面处理期间检测样品的表面状态而获得的信号进行操作。

公开(公告)号：US4462863A

公开(公告)日：1984-07-31

申请号：US459240

申请日：1983-01-19

申请人： Shigeru Nishimatsu ,  Keizo Suzuki ,  Ken Ninomiya ,  Ichiro Kanomata ,  Sadayuki Okudaira ,  Hiroji Saida

发明人： Shigeru Nishimatsu ,  Keizo Suzuki ,  Ken Ninomiya ,  Ichiro Kanomata ,  Sadayuki Okudaira ,  Hiroji Saida

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/30604 ,  H01J37/32192 ,  H01J37/3266 ,  H01J2237/3343 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

摘要： A microwave plasma etching system is disclosed which comprises a vacuum chamber for providing a discharge space and provided with an inlet for introducing a discharge gas containing a fluorine-containing gas, hydrogen and oxygen, magnetic field forming means for forming a magnetic field in the discharge space, microwave electric field forming means for forming a microwave electric field in the discharge space, and substrates holding means for holding substrates to be processed in the vacuum chamber. In the microwave plasma etching, the discharge gas containing fluorine, hydrogen with or without oxygen provides excellent etching almost free from side etching.

摘要翻译： 公开了一种微波等离子体蚀刻系统，其包括用于提供放电空间的真空室，并且设有用于引入含有含氟气体，氢气和氧气的放电气体的入口，用于在放电中形成磁场的磁场形成装置 用于在放电空间中形成微波电场的空间微波电场形成装置和用于保持在真空室中待处理的基板的基板保持装置。 在微波等离子体蚀刻中，含有氟的放电气体，具有或不具有氧气的氢提供几乎不受侧面蚀刻的优良蚀刻。

公开(公告)号：US4705595A

公开(公告)日：1987-11-10

申请号：US795314

申请日：1985-11-06

申请人： Sadayuki Okudaira ,  Shigeru Nishimatsu ,  Keizo Suzuki ,  Ken Ninomiya ,  Ryoji Hamazaki

发明人： Sadayuki Okudaira ,  Shigeru Nishimatsu ,  Keizo Suzuki ,  Ken Ninomiya ,  Ryoji Hamazaki

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  B44C1/22

CPC分类号： H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

摘要： Disclosed is a method for microwave plasma processing characterized by providing a plasma processing period of time having no radio-frequency voltage applied to the sample stage. Particularly, if the present invention is used for the shaping by etching of the conductive material layer provided on an underlying insulation material, effects such as shortening of processing time and improvement of etching accuracy can be obtained in the case that the radio-frequency voltage is applied only for the period of time for removing the surface oxide film of the portion to be etched, or in the case that the radio-frequency voltage is further applied until nearly the time to initiate over-etching, and, the latter case is also effective for making the side wall of the portion to be etched vertical.

摘要翻译： 公开了一种用于微波等离子体处理的方法，其特征在于提供没有施加到样品台的射频电压的等离子体处理时间段。 特别是，如果将本发明用于通过蚀刻设置在下面的绝缘材料上的导电材料层进行成形，则可以在射频电压为...的情况下获得诸如缩短加工时间和提高蚀刻精度等效果 仅在要被蚀刻部分的表面氧化膜去除一段时间的情况下，或者在进一步施加射频电压直到几乎开始过度蚀刻的时间为止，并且后一种情况也是 有效地使待蚀刻部分的侧壁垂直。

公开(公告)号：US4624214A

公开(公告)日：1986-11-25

申请号：US742389

申请日：1985-06-10

申请人： Keizo Suzuki ,  Ken Ninomiya ,  Shigeru Nishimatsu ,  Sadayuki Okudaira

发明人： Keizo Suzuki ,  Ken Ninomiya ,  Shigeru Nishimatsu ,  Sadayuki Okudaira

IPC分类号： H01J37/16 ,  H01J37/305 ,  H01L21/205 ,  H01L21/302 ,  H01L21/306

CPC分类号： H01L21/302 ,  H01J37/16 ,  H01J37/3053

摘要： In a dry-processing apparatus adapted for vapor phase deposition or vapor phase etching, the processing space in its processing chamber is covered with a cooled member provided for trapping reflecting active particles and preventing degassing, thereby permitting processing with gas of high purity substantially free from impurities. The active particles are incident upon a workpiece in a unidirectional flow. Means for uniformalyzing the direction of movement of active particles may be further provided. The apparatus is especially useful for vertical etching of a semiconductor substrate with neutral radicals.

摘要翻译： 在适用于气相沉积或气相蚀刻的干法处理装置中，其处理室中的处理空间被覆盖有用于捕集反射活性颗粒并防止脱气的冷却构件，从而允许用高纯度气体基本上不含 杂质。 活性颗粒以单向流入入工件。 可以进一步提供用于使活性颗粒的移动方向均匀化的方法。 该装置对于具有中性自由基的半导体衬底的垂直蚀刻特别有用。

公开(公告)号：US4559100A

公开(公告)日：1985-12-17

申请号：US684299

申请日：1984-12-20

申请人： Ken Ninomiya ,  Shigeru Nishimatsu ,  Keizo Suzuki ,  Sadayuki Okudaira ,  Yoshifumi Ogawa

发明人： Ken Ninomiya ,  Shigeru Nishimatsu ,  Keizo Suzuki ,  Sadayuki Okudaira ,  Yoshifumi Ogawa

IPC分类号： C23F4/00 ,  C23F1/08 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01J37/32623 ,  H01J37/32192 ,  H01J37/3266

摘要： A microwave plasma etching apparatus comprises: a discharge tube into which a discharge gas is supplied and which forms a discharge region; means for generating a magnetic field in the discharge region; means for bringing a microwave into the discharge region; and a stage for holding a material. In the present invention, the sample exists in the discharge region. On one hand, an area of a passage for draining particles to the outside from the discharge region is 5/16 or less of an area of the discharge region. For this purpose, for example, a diameter of the sample stage is 3/4 or more of a diameter of the discharge region.

摘要翻译： 微波等离子体蚀刻装置包括：放电管，放电气体被供给到其中并形成放电区域; 用于在放电区域产生磁场的装置; 用于将微波带入放电区域的装置; 和一个拿着材料的舞台。 在本发明中，样品存在于放电区域中。 一方面，从排出区域将颗粒排出到外部的通道区域是排出区域的面积的5/16以下。 为此，例如，样品台的直径为放电区域的直径的3/4以上。

公开(公告)号：US4481229A

公开(公告)日：1984-11-06

申请号：US505719

申请日：1983-06-20

申请人： Keizo Suzuki ,  Atsushi Hiraiwa ,  Shigeru Takahashi ,  Shigeru Nishimatsu ,  Ken Ninomiya ,  Sadayuki Okudaira

发明人： Keizo Suzuki ,  Atsushi Hiraiwa ,  Shigeru Takahashi ,  Shigeru Nishimatsu ,  Ken Ninomiya ,  Sadayuki Okudaira

IPC分类号： C23C16/24 ,  C01B21/068 ,  C01B33/02 ,  C23C16/34 ,  C23C16/511 ,  C30B25/10 ,  H01L21/205 ,  B05D3/06

CPC分类号： C23C16/511 ,  C30B25/105

摘要： A method for growing a silicon-including film is disclosed in which the above film is grown on a surface of a substrate by using, as a discharge gas, a halogenide silicon gas or a gas mixture containing a halogenide silicon gas in a plasma deposition apparatus including a vacuum chamber, means for supplying microwave power to the vacuum chamber, means for forming a magnetic field in at least part of the vacuum chamber, means for introducing the discharge gas into the vacuum chamber, and means for holding the substrate within the vacuum chamber.

摘要翻译： 公开了一种用于生长含硅膜的方法，其中通过在等离子体沉积装置中使用含有卤化硅硅气体的卤化硅硅气体或含有卤化物硅气体的气体混合物，在衬底的表面上生长上述膜 包括真空室，用于向真空室供给微波功率的装置，用于在真空室的至少一部分中形成磁场的装置，用于将放电气体引入真空室的装置，以及用于将衬底保持在真空中的装置 房间。

公开(公告)号：US4101411A

公开(公告)日：1978-07-18

申请号：US787878

申请日：1977-04-15

申请人： Keizo Suzuki ,  Sadayuki Okudaira ,  Ichiro Kanomata ,  Noriyuki Sakudo

发明人： Keizo Suzuki ,  Sadayuki Okudaira ,  Ichiro Kanomata ,  Noriyuki Sakudo

IPC分类号： H01J37/32 ,  C23C15/00 ,  B01K1/00

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32238

摘要： In an apparatus wherein a microwave discharge is caused by introducing a discharge gas into a discharge area to which a microwave electric field is supplied by a microwave coupler and to which an external magnetic field is supplied by a magnetic field generator, whereby the surface of a substrate is etched by using ions in a generated plasma, a plasma etching apparatus is characterized by employing a round waveguide as the microwave coupler, the discharge area being formed within the round waveguide.

摘要翻译： 在微波放电是通过将放电气体引入到由微波耦合器供给微波电场的放电区域中并且由磁场发生器供应外部磁场的情况下引起的微波放电的装置，由此， 通过在产生的等离子体中使用离子蚀刻衬底，等离子体蚀刻装置的特征在于采用圆形波导作为微波耦合器，放电区域形成在圆形波导内。

公开(公告)号：US4330384A

公开(公告)日：1982-05-18

申请号：US89093

申请日：1979-10-29

申请人： Sadayuki Okudaira ,  Keizo Suzuki ,  Shigeru Nishimatsu ,  Ichiro Kanomata

发明人： Sadayuki Okudaira ,  Keizo Suzuki ,  Shigeru Nishimatsu ,  Ichiro Kanomata

IPC分类号： H01L21/3065 ,  H01L21/3213 ,  C23F1/02 ,  H05H1/24

CPC分类号： H01L21/32135 ,  H01L21/3065 ,  H01L21/32137

摘要： Micro-wave plasma etching is carried out with a gas containing at least SF.sub.6 as an etching gas at a high etching rate of silicon, and a high selectivity, with an easy monitoring and a low temperature dependency.

摘要翻译： 微波等离子体蚀刻通过在硅的高蚀刻速率下以至少含有SF 6的气体作为蚀刻气体进行，并且具有高选择性，易于监测和低温度依赖性。

公开(公告)号：US4298419A

公开(公告)日：1981-11-03

申请号：US163294

申请日：1980-06-26

申请人： Keizo Suzuki ,  Sadayuki Okudaira ,  Shigeru Nishimatsu ,  Ichiro Kanomata

发明人： Keizo Suzuki ,  Sadayuki Okudaira ,  Shigeru Nishimatsu ,  Ichiro Kanomata

IPC分类号： C23F4/00 ,  C03C15/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/02 ,  C03C25/06 ,  H01L21/306

CPC分类号： H01J37/32357 ,  C03C15/00

摘要： A dry etching apparatus using microwaves according to the present invention is equipped with means for impressing such an AC voltage upon a sample as has a frequency ranging from 100 KHx to 10 MHx. Consequently, the sample has its surface prevented from being charged up no matter which it might be made of an insulator or might have its surface covered with an insulator. As a result, the etching rate can be maintained at a high level even for such sample.

摘要翻译： 根据本发明的使用微波的干式蚀刻装置具有将样品上的这种交流电压施加到100KHx至10MHZ的频率的装置。 因此，无论是由绝缘体制成还是将其表面覆盖绝缘体，样品的表面都不会被充电。 结果，即使对于这样的样品，蚀刻速率也可以保持在高水平。