Microprocessor with improved internal transmission
    1.
    发明授权
    Microprocessor with improved internal transmission 失效
    微处理器具有改进的内部传输

    公开(公告)号:US5339448A

    公开(公告)日:1994-08-16

    申请号:US015296

    申请日:1993-01-22

    摘要: A microprocessor according to the present invention comprises a sub-read bus, to which output terminals of registers of a register file of the microprocessor are coupled. The sub-read bus is in turn coupled to a main read bus of the microprocessor through a bus output circuit. Upon occurrence of a read access to any of the registers, the bus output circuit couples the sub-read bus with the main read bus, whereby data read out from the registers to the sub-read bus are transmitted to the main read bus, and under no existence of the read access, the bus output circuit interrupts the data transmission from the sub-read bus to the main read bus. With this, a load capacitance of the read bus is reduced. As a result, a time for making access to the read bus is much improved.

    摘要翻译: 根据本发明的微处理器包括子读总线,微处理器的寄存器文件的寄存器的输出端耦合到该子读总线。 子读取总线又通过总线输出电路耦合到微处理器的主读取总线。 在发生对任何寄存器的读取访问时,总线输出电路将子读总线与主读总线耦合,由此从寄存器读出到子读总线的数据被发送到主读总线, 在不存在读访问的情况下,总线输出电路中断从子读总线到主读总线的数据传输。 因此,读总线的负载电容减小。 结果,访问读总线的时间大大改善。

    Bipolar-MOS IC with internal voltage generator and LSI device with
internal voltage generator
    2.
    发明授权
    Bipolar-MOS IC with internal voltage generator and LSI device with internal voltage generator 失效
    具有内部电压发生器和具有内部电压发生器的LSI器件的双极MOS IC

    公开(公告)号:US5153452A

    公开(公告)日:1992-10-06

    申请号:US401849

    申请日:1989-08-30

    摘要: There are provided a bipolar-MOS IC device smaller than half-micron scale, and a combination of such IC device and external circuits. The IC device has an internal voltage generating circuit for generating an internal power source by using an external power source, the voltage of the internal power source being lower than that of the external power source. The internal voltage generating circuit includes an NPN transistor formed in an N-type region or N-type island within a P-type semiconductor substrate of the IC device, and a PMOS transistor formed in the N-type island. The collector of the NPN transistor and the source of the PMOS transistor are used as external power source terminals. The drain of the PMOS transistor is connected to the base of the NPN transistor. The gate is used as a control signal terminal. The emitter of the NPN transistor is used as an internal power source output terminal. A current path from the external power source input terminal and the internal power source output terminal is accordingly formed within the N-type island isolated from the P-type substrate.

    摘要翻译: 提供了小于半微米级的双极MOS集成电路,以及这些IC器件和外部电路的组合。 IC器件具有内部电压产生电路,用于通过使用外部电源产生内部电源,内部电源的电压低于外部电源的电压。 内部电压产生电路包括形成在IC器件的P型半导体衬底内的N型区域或N型岛中的NPN晶体管和形成在N型岛中的PMOS晶体管。 NPN晶体管的集电极和PMOS晶体管的源极用作外部电源端子。 PMOS晶体管的漏极连接到NPN晶体管的基极。 门用作控制信号端子。 NPN晶体管的发射极用作内部电源输出端子。 因此,在与P型基板隔离的N型岛中形成从外部电源输入端子和内部电源输出端子的电流路径。

    Pipelined semiconductor devices suitable for ultra large scale integration
    4.
    发明授权
    Pipelined semiconductor devices suitable for ultra large scale integration 失效
    适用于超大规模集成的流水线半导体器件

    公开(公告)号:US06467004B1

    公开(公告)日:2002-10-15

    申请号:US09477448

    申请日:2000-01-04

    IPC分类号: G06F938

    CPC分类号: G06F9/3875 G06F9/3869

    摘要: A high speed, high performance pipelined semiconductor device is provided, such as a pipelined data processing device and memory device. In the pipeline operation, a functional circuit unit and a transmission unit are separately controlled at each pipeline stage cycle. A transmission unit between two functional circuit units is divided into N transmission units while considering a cycle time, and each divided transmission unit is assigned one pipeline stage cycle.

    摘要翻译: 提供了一种高速,高性能流水线半导体器件,例如流水线数据处理设备和存储器件。 在流水线操作中,功能电路单元和传输单元在每个流水线级周期被单独控制。 两个功能电路单元之间的传输单元在考虑周期时间的同时被分成N个传输单元,并且每个划分的传输单元被分配一个流水线级周期。