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21 条记录 (耗时 0.029 秒)

    Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal
    3.
    发明授权
    Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal 有权
    铌酸锂或钽酸锂的单晶及其光学元件，以及用于生产氧化物单晶的工艺和设备

    公开(公告)号：US06673330B1

    公开(公告)日：2004-01-06

    申请号：US09521899

    申请日：2000-03-09

    申请人： Kenji Kitamura ,  Yasunori Furukawa ,  Shunji Takekawa ,  Shigeyuki Kimura

    发明人： Kenji Kitamura ,  Yasunori Furukawa ,  Shunji Takekawa ,  Shigeyuki Kimura

    IPC分类号： C01D1500

    CPC分类号： C30B15/12 ,  C30B15/00 ,  C30B29/30 ,  Y10T117/10

    摘要： A single crystal of lithium niobate or lithium tantalate may be grown from a melt of a composition having a molar excess of Li compared to a melt having the stoichiometric amount of lithium, and having a molar fraction of Li2O/(Nb2O5+Li2O) or Li2O/(Ta2O5+Li2O) within a range of at least 0.490 and less than 0.500. The single crystal also has at least one element selected from the group consisting of Mg, Zn, Sc and In, in an amount of from 0.1 to 3.0 mol % based on the total amount of the elements, Nb and Li, or the total amount of the elements, Ta and Li.

    摘要翻译： 铌酸锂或钽酸锂的单晶可以从具有摩尔过量的Li的组合物的熔体与具有化学计量的锂的熔体相比生长，并且具有Li 2 O /（Nb 2 O 5 + Li 2 O）或Li 2 O的摩尔分数 /（Ta2O5 + Li2O）在0.490以上且小于0.500的范围内。 单晶还具有选自Mg，Zn，Sc和In中的至少一种元素，相对于元素的总量，Nb和Li为0.1〜3.0摩尔％，或者总量 的元素，Ta和Li。

    Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal
    4.
    发明授权
    Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal 有权
    铌酸锂或钽酸锂的单晶及其光学元件，以及用于生产氧化物单晶的工艺和设备

    公开(公告)号：US06464777B2

    公开(公告)日：2002-10-15

    申请号：US09754187

    申请日：2001-01-05

    申请人： Kenji Kitamura ,  Yasunori Furukawa ,  Shunji Takekawa ,  Shigeyuki Kimura

    发明人： Kenji Kitamura ,  Yasunori Furukawa ,  Shunji Takekawa ,  Shigeyuki Kimura

    IPC分类号： C30B1500

    CPC分类号： C30B15/12 ,  C30B15/00 ,  C30B29/30 ,  Y10T117/10

    摘要： A stoichiometric single crystal of lithium niobate or lithium tantalate is produced by pulling a single crystal of lithium niobate or lithium tantalate having a molar fraction of Li2O/(Nb2O5+Li2O) or Li2O/ (Ta2O5+Li2O) of at least 0.490 and less than 0.500, from a melt of a composition having a molar excess of Li over a stoichiometric composition of lithium niobate or lithium tantalate. The single crystal has 0.1 to 3 mol % of at least one element selected from the group consisting of Mg, Zn, Sc and In based on a total amount of elements Nb and Li, or a total amount of elements Ta and Li. The single crystal has substantially no absorption in the visible light region.

    摘要翻译： 铌酸锂或钽酸锂的化学计量单晶通过将具有至少0.490摩尔分数的Li 2 O /（Nb 2 O 5 + Li 2 O）或Li 2 O /（Ta 2 O 5 + Li 2 O）的摩尔分数的铌酸锂或钽酸锂的单晶拉伸并且小于 0.500，来自具有摩尔过量的Li的组合物的熔体，其化学计量组成为铌酸锂或钽酸锂。 基于元素Nb和Li的总量或元素Ta和Li的总量，单晶具有选自Mg，Zn，Sc和In中的至少一种元素的0.1至3mol％。 单晶在可见光区域基本上没有吸收。

    Growth of silicon crystal from melt having extraordinary eddy flows on its surface
    5.
    发明授权
    Growth of silicon crystal from melt having extraordinary eddy flows on its surface 失效
    来自熔体的硅晶体在其表面上生长具有非凡的涡流

    公开(公告)号：US5704974A

    公开(公告)日：1998-01-06

    申请号：US620873

    申请日：1996-03-22

    申请人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

    发明人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

    IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208 ,  C30B15/22

    CPC分类号： C30B29/06 ,  C30B15/30

    摘要： When a Si single crystal 8 is pulled up from a melt 6 received in a crucible 2, the state of eddy flows generated in the melt 6 is judged from the temperature distribution of the melt at the surface. According to the result of judgement, the gas, i.e. N.sub.2, Xe or Kr, which causes extraoridnary deviation in the density of a melt 6 is added to an atmospheric gas, so as to keep the eddy flows under unstabilized condition. The effect of said gas is typical in the case of crystal growth from the melt to which a dopant such as Ca, Sb, Al, As or In having the effect to suppress the extraordinary deviation in the density is added. Since the single crystal is pulled up from the melt held in the temperature-controlled condition at the surface, impurity distribution and oxygen distribution are made uniform along the direction of crystal growth. A single crystal obtained in this way has highly-stabilized quality.

    摘要翻译： 当将Si单晶8从容纳在坩埚2中的熔融物6拉出时，根据表面的熔体的温度分布来判断在熔体6中产生的涡流的状态。 根据判断结果，将气体，即N2，Xe或Kr，其引起熔体6的密度的异常偏差加到大气中，以保持涡流处于不稳定状态。 在来自熔融体的晶体生长的情况下，所述气体的效果是典型的，在该熔体中添加了具有抑制密度特别偏差的作用的诸如Ca，Sb，Al，As或In的掺杂剂。 由于单晶被从保持在表面的温度控制条件下的熔体中拉出，所以杂质分布和氧分布沿晶体生长方向均匀。 以这种方式获得的单晶具有高度稳定的质量。

    Near field analysis apparatus
    7.
    发明申请
    Near field analysis apparatus 有权
    近场分析仪

    公开(公告)号：US20060131493A1

    公开(公告)日：2006-06-22

    申请号：US11316402

    申请日：2005-12-22

    申请人： Yoshihito Narita ,  Shigeyuki Kimura ,  Fuminori Sato ,  Atsushi Yamada

    发明人： Yoshihito Narita ,  Shigeyuki Kimura ,  Fuminori Sato ,  Atsushi Yamada

    IPC分类号： H01J40/14

    CPC分类号： G01Q60/22

    摘要： A near field analysis apparatus comprising: an irradiation optical system comprising an irradiation-side adjustable optical system for adjusting the position or angle of an optical axis thereof, and irradiating irradiation-side guide light onto an adjustment surface via the irradiation-side adjustable optical system; a light collecting optical system comprising a light-collection-side adjustable optical system for adjusting the position or angle of an optical axis thereof, and irradiating light-collection-side guide light onto the adjustment surface via the light-collection-side adjustable optical system; an irradiation-side adjustment device for adjusting the position or angle of the irradiation-side adjustable optical system such that the spots of the guide light, which are observed at the adjustment surface, match; and a light-collection-side adjustment device for adjusting the position or angle of the light-collection-side adjustable optical system such that the spots of the guide light, which are observed at the adjustment surface, match.

    摘要翻译： 一种近场分析装置，包括：照射光学系统，包括用于调节其光轴的位置或角度的照射侧可调节光学系统，并且经由照射侧可调节光学系统将照射侧引导光照射到调整表面上 ; 光收集光学系统，包括用于调节其光轴的位置或角度的采光侧可调光学系统，以及经由采光侧可调节光学系统将光收集侧引导光照射到调节表面上 ; 照射侧调节装置，用于调节照射侧可调节光学系统的位置或角度，使得在调节表面观察到的引导光点相匹配; 以及采集侧调整装置，其用于调整所述收光侧可调光学系统的位置或角度，使得在所述调整面观察到的所述引导光的光斑匹配。

    Near-field microscope
    8.
    发明授权
    Near-field microscope 有权
    近场显微镜

    公开(公告)号：US06710331B2

    公开(公告)日：2004-03-23

    申请号：US09986012

    申请日：2001-11-07

    申请人： Yoshihito Narita ,  Shigeyuki Kimura

    发明人： Yoshihito Narita ,  Shigeyuki Kimura

    IPC分类号： H01J314

    CPC分类号： G01Q60/22 ,  G01Q10/06 ,  G01Q30/06 ,  Y10S977/862

    摘要： A near-field microscope comprising: a probe for scattering a near-field light; light emitting device including a light source for emitting light to a sample or said probe; and light sampling device for sampling and detecting a light that includes information of the sample scattered by said probe, said microscope comprising: control device for spacing said sample or probe from a field of a near-field light generated by said light emission or disposing the sample or probe at a position that is shallow in a field of near-field light, thereby detecting a noise by said light sampling device; inserting said sample or probe deeply into a field of near-field light generated by said light emission, thereby detecting light intensity by said light sampling device; and computing device for computing a measurement result obtained by subtracting a noise from said light intensity.

    摘要翻译： 一种近场显微镜，包括：用于散射近场光的探针; 发光器件包括用于向样品或所述探针发射光的光源; 以及用于采样和检测包括由所述探针散射的样品的信息的光的光取样装置，所述显微镜包括：用于将所述样品或探针与由所述发光产生的近场光的场隔开的控制装置， 在近场光场中的浅的位置处的样品或探针，从而通过所述光采样装置检测噪声; 将所述样品或探针深深地插入由所述发光产生的近场光的场中，从而由所述光采样装置检测光强度; 以及用于计算通过从所述光强减去噪声而获得的测量结果的计算装置。