公开(公告)号：US06836357B2

公开(公告)日：2004-12-28

申请号：US10006435

申请日：2001-12-04

申请人： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif M. Islam

发明人： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif M. Islam

IPC分类号： H01S300

CPC分类号： B82Y20/00 ,  H01S5/3413 ,  H01S5/50 ,  H01S5/5027 ,  H01S5/5063 ,  H01S5/5072 ,  H01S2301/02

摘要： A semiconductor optical amplifier (SOA) apparatus and related methods are described. The SOA comprises a signal waveguide for guiding an optical signal along a signal path, and further comprises one or more laser cavities having a gain medium lying outside the signal waveguide, the gain medium being sufficiently close to the signal waveguide such that, when the gain medium is pumped with an excitation current, the optical signal traveling down the signal waveguide is amplified by an evanescent coupling effect with the laser cavity. When the gain medium is sufficiently pumped to cause lasing action in the laser cavity, gain-clamped amplification of the optical signal is achieved. Additional features relating to segmented laser cavities, separate pumping of laser cavity segments, DFB/DBR gratings, current profiling to improve ASE noise performance, coupled-cavity lasers, avoidance of injection locking effects, manipulation of gain curve peaks, integration with a tunable vertical cavity coupler, integration with a photodetector, integration with an RZ signal modulator, and other described features may be used with the evanescent coupling case or with an SOA having a laser cavity gain medium that is coextensive with the gain medium of the signal waveguide.

摘要翻译： 描述了一种半导体光放大器（SOA）装置及相关方法。 SOA包括用于沿着信号路径引导光信号的信号波导，并且还包括一个或多个具有位于信号波导外部的增益介质的激光腔，增益介质足够靠近信号波导，使得当增益 介质用激励电流泵浦，沿信号波导下行的光信号通过与激光腔的ev逝耦合效应放大。 当增益介质被充分泵送以在激光腔中引起激光作用时，实现光信号的增益钳位放大。 与分段激光腔相关的附加特征，激光腔段的独立泵浦，DFB / DBR光栅，电流分析以改善ASE噪声性能，耦合腔激光器，避免注入锁定效应，操纵增益曲线峰值，与可调谐垂直线 空腔耦合器，与光电检测器的集成，与RZ信号调制器的集成以及其它所描述的特征可以与ev逝耦合壳体或具有与信号波导的增益介质共同延伸的激光腔增益介质的SOA一起使用。

公开(公告)号：US07265898B2

公开(公告)日：2007-09-04

申请号：US11024319

申请日：2004-12-27

申请人： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif M. Islam

发明人： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif M. Islam

IPC分类号： H01S3/00

CPC分类号： B82Y20/00 ,  H01S5/3413 ,  H01S5/50 ,  H01S5/5027 ,  H01S5/5063 ,  H01S5/5072 ,  H01S2301/02

摘要： A semiconductor optical amplifier (SOA) apparatus and related methods are described. The SOA comprises a signal waveguide for guiding an optical signal along a signal path, and further comprises one or more laser cavities having a gain medium lying outside the signal waveguide, the gain medium being sufficiently close to the signal waveguide such that, when the gain medium is pumped with an excitation current, the optical signal traveling down the signal waveguide is amplified by an evanescent coupling effect with the laser cavity. When the gain medium is sufficiently pumped to cause lasing action in the laser cavity, gain-clamped amplification of the optical signal is achieved. Additional features relating to segmented laser cavities, separate pumping of laser cavity segments, DFB/DBR gratings, current profiling to improve ASE noise performance, coupled-cavity lasers, avoidance of injection locking effects, manipulation of gain curve peaks, integration with a tunable vertical cavity coupler, integration with a photodetector, integration with an RZ signal modulator, and other described features may be used with the evanescent coupling case or with an SOA having a laser cavity gain medium that is coextensive with the gain medium of the signal waveguide.

摘要翻译： 描述了一种半导体光放大器（SOA）装置及相关方法。 SOA包括用于沿着信号路径引导光信号的信号波导，并且还包括一个或多个具有位于信号波导外部的增益介质的激光腔，增益介质足够靠近信号波导，使得当增益 介质用激励电流泵浦，沿信号波导下行的光信号通过与激光腔的ev逝耦合效应放大。 当增益介质被充分泵送以在激光腔中引起激光作用时，实现光信号的增益钳位放大。 与分段激光腔相关的附加特征，激光腔段的独立泵浦，DFB / DBR光栅，电流分析以改善ASE噪声性能，耦合腔激光器，避免注入锁定效应，操纵增益曲线峰值，与可调谐垂直线 空腔耦合器，与光电检测器的集成，与RZ信号调制器的集成以及其它所描述的特征可以与ev逝耦合壳体或具有与信号波导的增益介质共同延伸的激光腔增益介质的SOA一起使用。

公开(公告)号：US20050111079A1

公开(公告)日：2005-05-26

申请号：US11024319

申请日：2004-12-27

申请人： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif Islam

发明人： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif Islam

IPC分类号： H01S5/34 ,  H01S5/50 ,  H01S3/00

CPC分类号： B82Y20/00 ,  H01S5/3413 ,  H01S5/50 ,  H01S5/5027 ,  H01S5/5063 ,  H01S5/5072 ,  H01S2301/02

摘要： A semiconductor optical amplifier (SOA) apparatus and related methods are described. The SOA comprises a signal waveguide for guiding an optical signal along a signal path, and further comprises one or more laser cavities having a gain medium lying outside the signal waveguide, the gain medium being sufficiently close to the signal waveguide such that, when the gain medium is pumped with an excitation current, the optical signal traveling down the signal waveguide is amplified by an evanescent coupling effect with the laser cavity. When the gain medium is sufficiently pumped to cause lasing action in the laser cavity, gain-clamped amplification of the optical signal is achieved. Additional features relating to segmented laser cavities, separate pumping of laser cavity segments, DFB/DBR gratings, current profiling to improve ASE noise performance, coupled-cavity lasers, avoidance of injection locking effects, manipulation of gain curve peaks, integration with a tunable vertical cavity coupler, integration with a photodetector, integration with an RZ signal modulator, and other described features may be used with the evanescent coupling case or with an SOA having a laser cavity gain medium that is coextensive with the gain medium of the signal waveguide.

摘要翻译： 描述了一种半导体光放大器（SOA）装置及相关方法。 SOA包括用于沿着信号路径引导光信号的信号波导，并且还包括一个或多个具有位于信号波导外部的增益介质的激光腔，增益介质足够靠近信号波导，使得当增益 介质用激励电流泵浦，沿信号波导下行的光信号通过与激光腔的ev逝耦合效应放大。 当增益介质被充分泵送以在激光腔中引起激光作用时，实现光信号的增益钳位放大。 与分段激光腔相关的附加特征，激光腔段的独立泵浦，DFB / DBR光栅，电流分析以改善ASE噪声性能，耦合腔激光器，避免注入锁定效应，操纵增益曲线峰值，与可调谐垂直线 空腔耦合器，与光电检测器的集成，与RZ信号调制器的集成以及其它所描述的特征可以与ev逝耦合壳体或具有与信号波导的增益介质共同延伸的激光腔增益介质的SOA一起使用。

公开(公告)号：US06714344B2

公开(公告)日：2004-03-30

申请号：US10098913

申请日：2002-03-15

申请人： Saif M. Islam ,  Shih-Yuan Wang

发明人： Saif M. Islam ,  Shih-Yuan Wang

IPC分类号： H01S300

CPC分类号： H01S5/50 ,  B82Y20/00 ,  H01S5/3413 ,  H01S5/5027 ,  H01S5/5063 ,  H01S5/5072 ,  H01S2301/02

摘要： A ballast-powered semiconductor optical amplifier (SOA) apparatus and related methods are described. The SOA comprises a signal waveguide for guiding an optical signal along a signal path, and further comprises one or more ballast lasers positioned with respect to the signal waveguide such that the optical signal is amplified using energy from the lasing fields of the one or more ballast lasers. The problem of relative intensity noise (RIN) transfer from the ballast lasers into the optical signal is avoided by ensuring that the relaxation oscillation frequency (ROF) of each ballast laser is sufficiently higher than the signal modulation rate such that the RIN spectrum is tolerably low at the signal modulation rate. The ROFs themselves are manipulated by methods including adjustment of excitation current densities within the ballast lasers. In multiple-ballast laser embodiments, improvements in amplified spontaneous noise (ASE) performance are achieved where the optical signal gain per unit distance is higher near the SOA input and lower near the SOA output. Embodiments are also described in which multi-segment ballast lasers are used and in which operating points are found that satisfy the RIN noise, ASE noise, and output saturation power criteria.

摘要翻译： 描述了镇流器供电的半导体光放大器（SOA）装置及相关方法。 SOA包括用于沿着信号路径引导光信号的信号波导，并且还包括相对于信号波导定位的一个或多个镇流器激光器，使得使用来自一个或多个镇流器的激光场的能量来放大光信号 激光器 通过确保每个镇流器激光器的弛豫振荡频率（ROF）足够高于信号调制速率，使得RIN频谱容忍度低，可以避免从镇流器激光器到光信号的相对强度噪声（RIN）传递的问题 信号调制率。 ROF本身通过包括调整镇流器激光器内的激发电流密度的方法来操纵。 在多重镇流器激光器实施例中，实现了放大自发噪声（ASE）性能的改进，其中每单位距离的光信号增益在SOA输入附近较高，在SOA输出附近较低。 还描述了使用多段镇流器激光器的实施例，其中发现满足RIN噪声，ASE噪声和输出饱和功率标准的工作点。

公开(公告)号：US06876687B2

公开(公告)日：2005-04-05

申请号：US10602139

申请日：2003-06-23

申请人： Zuhua Zhu ,  Shih-Yuan Wang

发明人： Zuhua Zhu ,  Shih-Yuan Wang

IPC分类号： H01L33/00 ,  H01S5/183 ,  H01S5/20 ,  H04B10/155 ,  H01S5/00

CPC分类号： H01S5/18316 ,  H01S5/18308 ,  H01S5/18333 ,  H01S5/2063 ,  H01S5/2086 ,  H01S2301/166 ,  H01S2301/176 ,  H04B10/503

摘要： A vertical cavity surface emitting laser (VCSEL) structure and fabrication method therefor are described in which a subsurface air, gas, or vacuum current confinement method is used to restrict the area of electrical flow in the active region. Using vertical hollow shafts to access a subsurface current confinement layer, a selective lateral etching process is used to form a plurality of subsurface cavities in the current confinement layer, the lateral etching process continuing until the subsurface cavities laterally merge to form a single subsurface circumferential cavity that surrounds a desired current confinement zone. Because the subsurface circumferential cavity is filled with air, gas, or vacuum, the stresses associated with oxidation-based current confinement methods are avoided. Additionally, because the confinement is achieved by subsurface cavity structures, overall mechanical strength of the current-confining region is maintained.

摘要翻译： 描述了垂直腔表面发射激光器（VCSEL）结构及其制造方法，其中使用地下空气，气体或真空电流限制方法来限制有源区域中的电流的面积。 使用垂直空心轴来接近地下电流限制层，选择性横向蚀刻工艺用于在电流限制层中形成多个次表面空腔，横向蚀刻工艺继续进行，直到地下空腔横向合并形成单个地下圆周腔 其围绕期望的电流限制区。 因为地下圆周空腔充满了空气，气体或真空，所以避免了与基于氧化的电流限制方法相关的应力。 此外，由于限制是通过地下空腔结构实现的，因此保持了电流限制区域的总体机械强度。

公开(公告)号：US06589805B2

公开(公告)日：2003-07-08

申请号：US10106991

申请日：2002-03-26

申请人： Zuhua Zhu ,  Shih-Yuan Wang

发明人： Zuhua Zhu ,  Shih-Yuan Wang

IPC分类号： H01L21302

CPC分类号： H01S5/18316 ,  H01S5/18308 ,  H01S5/18333 ,  H01S5/2063 ,  H01S5/2086 ,  H01S2301/166 ,  H01S2301/176 ,  H04B10/503

摘要： A vertical cavity surface emitting laser (VCSEL) structure and fabrication method therefor are described in which a subsurface air, gas, or vacuum current confinement method is used to restrict the area of electrical flow in the active region. Using vertical hollow shafts to access a subsurface current confinement layer, a selective lateral etching process is used to form a plurality of subsurface cavities in the current confinement layer, the lateral etching process continuing until the subsurface cavities laterally merge to form a single subsurface circumferential cavity that surrounds a desired current confinement zone. Because the subsurface circumferential cavity is filled with air, gas, or vacuum, the stresses associated with oxidation-based current confinement methods are avoided. Additionally, because the confinement is achieved by subsurface cavity structures, overall mechanical strength of the current-confining region is maintained.

公开(公告)号：US07068948B2

公开(公告)日：2006-06-27

申请号：US09971831

申请日：2001-10-04

申请人： Haiqing Wei ,  Aly F. Elrefaie ,  Xin Xue ,  Shih-Yuan Wang

发明人： Haiqing Wei ,  Aly F. Elrefaie ,  Xin Xue ,  Shih-Yuan Wang

IPC分类号： H04B10/04

CPC分类号： H04B10/508 ,  G02F2001/212 ,  G02F2203/70

摘要： An optical return-to-zero (RZ) signal generator and related methods are described in which a phase modulator causes a phase change in an optical signal responsive to a transition in a driving signal, and in which an interferometer receives the optical signal from the phase modulator and generates an optical pulse responsive to that phase change. Preferably, the interferometer introduces a fixed, unmodulated time delay between its two signal paths, the fixed time delay being selected such that destructive interference occurs at an output of the interferometer when the phase of the optical signal received from the phase modulator remains constant. However, when a rising or falling edge of the driving signal causes phases changes in the optical signal, the destructive interference at the output of the interferometer is disturbed, and an optical pulse is generated. The driving signal is a differentially encoded version of an input information signal. Alternatively, the driving signal is proportional to the input information signal and the transmitted RZ-formatted optical signal is a differentially encoded version of that signal. Features for regulating the fixed time delay, features for frequency shift compensation, features for loss compensation/equalization, and integrated single-chip and multiple-chip embodiments are also described.

公开(公告)号：US06597497B2

公开(公告)日：2003-07-22

申请号：US09972146

申请日：2001-10-04

申请人： Shih-Yuan Wang ,  Miao Zhu

发明人： Shih-Yuan Wang ,  Miao Zhu

IPC分类号： H01S300

CPC分类号： B82Y20/00 ,  H01S5/3413 ,  H01S5/50 ,  H01S5/5027 ,  H01S5/5063 ,  H01S5/5072 ,  H01S2301/02

摘要： A semiconductor optical amplifier with increased gain stability is described, comprising a signal waveguide that guides an optical signal along a signal path that intersects with one or more transverse laser cavities. A gain medium of the signal waveguide is integral with a gain medium of the transverse laser cavities at regions of intersection between the signal waveguide and the transverse laser cavities, resulting in gain-stabilized operation when the transverse laser cavities are biased above threshold. Successive transverse laser cavities are separated along the signal path by connecting zones having a higher electrical resistivity than the transverse laser cavities, providing a measure of electrical isolation between the transverse laser cavities and reducing parasitic lasing modes among them. The transverse laser cavities may be provided with separate bias currents for precise control of gain along the signal path. In another preferred embodiment, the transverse laser cavities are segmented in the direction of the lasing field into multiple segments with separate electrical contacts. For certain applications, one or more of the transverse laser cavities may be kept dark near its end mirrors to impede lasing and causing the gain medium to have a nonlinear gain profile for that transverse laser cavity, while other transverse laser cavities along the signal path maintain linear gain profiles. Preferred embodiments with reduced amplified spontaneous emission (ASE) noise are also described.

摘要翻译： 描述了具有增加的增益稳定性的半导体光放大器，其包括沿着与一个或多个横向激光腔相交的信号路径引导光信号的信号波导。 信号波导的增益介质与信号波导和横向激光腔之间的交叉区域处的横向激光腔的增益介质是一体的，当横向激光腔偏置在阈值以上时，增益稳定的操作。 通过连接具有比横向激光腔更高的电阻率的区域，沿着信号路径分离连续的横向激光腔，从而提供横向激光腔之间的电绝缘的测量，并减少它们之间的寄生激光模式。 横向激光腔可以设置有单独的偏置电流，用于精确控制沿着信号路径的增益。 在另一个优选实施例中，横向激光腔在激光场的方向上被划分成具有分开的电触点的多个段。 对于某些应用，横向激光腔中的一个或多个可以在其后视镜附近保持暗，以阻止激光并使增益介质对该横向激光腔具有非线性增益分布，而沿信号路径的其它横向激光腔保持 线性增益曲线。 还描述了具有降低的放大自发发射（ASE）噪声的优选实施例。

公开(公告)号：US09323217B2

公开(公告)日：2016-04-26

申请号：US13142484

申请日：2008-12-29

申请人： Shih-Yuan Wang ,  Alexandre M. Bratkovski ,  R. Stanley Williams ,  Jingjing Li ,  Wei Wu ,  Philip J. Kuekes

发明人： Shih-Yuan Wang ,  Alexandre M. Bratkovski ,  R. Stanley Williams ,  Jingjing Li ,  Wei Wu ,  Philip J. Kuekes

IPC分类号： G03H1/08 ,  G03H1/02 ,  G03H1/22 ,  G02B1/00

CPC分类号： G03H1/02 ,  G02B1/007 ,  G03H1/2249 ,  G03H1/2294 ,  G03H2001/0224 ,  G03H2210/30 ,  G03H2225/22 ,  G03H2225/32 ,  G03H2225/33

摘要： A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.

摘要翻译： 负指数材料（或超材料）横杆包括大致平行的纳米线的第一层和覆盖第一层中的纳米线的大致平行的纳米线的第二层。 第一层中的纳米线在第二层中与纳米线的取向近似垂直。 第一层的每个纳米线和第二层的每个纳米线具有基本上规则间隔的指状物。 横杆还包括在各层之间的纳米线交叉处的共振元件。 每个谐振元件包括第一层中的纳米线的两个指状物和第二层中的纳米线的两个指状物。

公开(公告)号：US09272900B2

公开(公告)日：2016-03-01

申请号：US12864205

申请日：2008-01-30

申请人： Shih-Yuan Wang ,  Michael Renne Ty Tan

发明人： Shih-Yuan Wang ,  Michael Renne Ty Tan

IPC分类号： H01L29/06 ,  B81C1/00 ,  B82Y10/00 ,  H01L31/0352 ,  H01L31/105

CPC分类号： B81C1/00142 ,  B81C2201/0171 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L31/035281 ,  H01L31/105 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： A nanostructure includes a highly conductive microcrystalline layer, a bipolar nanowire, and another layer (18, 30). The highly conductive microcrystalline layer includes a microcrystalline material and a metal. The bipolar nanowire has one end attached to the highly conductive microcrystalline layer and another end attached to the other layer.

摘要翻译： 纳米结构包括高导电微晶层，双极纳米线和另一层（18,30）。 高导电性微晶层包括微晶材料和金属。 双极纳米线的一端连接到高导电微晶层，另一端连接到另一层。