公开(公告)号：US06836357B2

公开(公告)日：2004-12-28

申请号：US10006435

申请日：2001-12-04

申请人： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif M. Islam

发明人： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif M. Islam

IPC分类号： H01S300

CPC分类号： B82Y20/00 ,  H01S5/3413 ,  H01S5/50 ,  H01S5/5027 ,  H01S5/5063 ,  H01S5/5072 ,  H01S2301/02

摘要： A semiconductor optical amplifier (SOA) apparatus and related methods are described. The SOA comprises a signal waveguide for guiding an optical signal along a signal path, and further comprises one or more laser cavities having a gain medium lying outside the signal waveguide, the gain medium being sufficiently close to the signal waveguide such that, when the gain medium is pumped with an excitation current, the optical signal traveling down the signal waveguide is amplified by an evanescent coupling effect with the laser cavity. When the gain medium is sufficiently pumped to cause lasing action in the laser cavity, gain-clamped amplification of the optical signal is achieved. Additional features relating to segmented laser cavities, separate pumping of laser cavity segments, DFB/DBR gratings, current profiling to improve ASE noise performance, coupled-cavity lasers, avoidance of injection locking effects, manipulation of gain curve peaks, integration with a tunable vertical cavity coupler, integration with a photodetector, integration with an RZ signal modulator, and other described features may be used with the evanescent coupling case or with an SOA having a laser cavity gain medium that is coextensive with the gain medium of the signal waveguide.

摘要翻译： 描述了一种半导体光放大器（SOA）装置及相关方法。 SOA包括用于沿着信号路径引导光信号的信号波导，并且还包括一个或多个具有位于信号波导外部的增益介质的激光腔，增益介质足够靠近信号波导，使得当增益 介质用激励电流泵浦，沿信号波导下行的光信号通过与激光腔的ev逝耦合效应放大。 当增益介质被充分泵送以在激光腔中引起激光作用时，实现光信号的增益钳位放大。 与分段激光腔相关的附加特征，激光腔段的独立泵浦，DFB / DBR光栅，电流分析以改善ASE噪声性能，耦合腔激光器，避免注入锁定效应，操纵增益曲线峰值，与可调谐垂直线 空腔耦合器，与光电检测器的集成，与RZ信号调制器的集成以及其它所描述的特征可以与ev逝耦合壳体或具有与信号波导的增益介质共同延伸的激光腔增益介质的SOA一起使用。

公开(公告)号：US07265898B2

公开(公告)日：2007-09-04

申请号：US11024319

申请日：2004-12-27

申请人： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif M. Islam

发明人： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif M. Islam

IPC分类号： H01S3/00

CPC分类号： B82Y20/00 ,  H01S5/3413 ,  H01S5/50 ,  H01S5/5027 ,  H01S5/5063 ,  H01S5/5072 ,  H01S2301/02

摘要： A semiconductor optical amplifier (SOA) apparatus and related methods are described. The SOA comprises a signal waveguide for guiding an optical signal along a signal path, and further comprises one or more laser cavities having a gain medium lying outside the signal waveguide, the gain medium being sufficiently close to the signal waveguide such that, when the gain medium is pumped with an excitation current, the optical signal traveling down the signal waveguide is amplified by an evanescent coupling effect with the laser cavity. When the gain medium is sufficiently pumped to cause lasing action in the laser cavity, gain-clamped amplification of the optical signal is achieved. Additional features relating to segmented laser cavities, separate pumping of laser cavity segments, DFB/DBR gratings, current profiling to improve ASE noise performance, coupled-cavity lasers, avoidance of injection locking effects, manipulation of gain curve peaks, integration with a tunable vertical cavity coupler, integration with a photodetector, integration with an RZ signal modulator, and other described features may be used with the evanescent coupling case or with an SOA having a laser cavity gain medium that is coextensive with the gain medium of the signal waveguide.

摘要翻译： 描述了一种半导体光放大器（SOA）装置及相关方法。 SOA包括用于沿着信号路径引导光信号的信号波导，并且还包括一个或多个具有位于信号波导外部的增益介质的激光腔，增益介质足够靠近信号波导，使得当增益 介质用激励电流泵浦，沿信号波导下行的光信号通过与激光腔的ev逝耦合效应放大。 当增益介质被充分泵送以在激光腔中引起激光作用时，实现光信号的增益钳位放大。 与分段激光腔相关的附加特征，激光腔段的独立泵浦，DFB / DBR光栅，电流分析以改善ASE噪声性能，耦合腔激光器，避免注入锁定效应，操纵增益曲线峰值，与可调谐垂直线 空腔耦合器，与光电检测器的集成，与RZ信号调制器的集成以及其它所描述的特征可以与ev逝耦合壳体或具有与信号波导的增益介质共同延伸的激光腔增益介质的SOA一起使用。

公开(公告)号：US20050111079A1

公开(公告)日：2005-05-26

申请号：US11024319

申请日：2004-12-27

申请人： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif Islam

发明人： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif Islam

IPC分类号： H01S5/34 ,  H01S5/50 ,  H01S3/00

CPC分类号： B82Y20/00 ,  H01S5/3413 ,  H01S5/50 ,  H01S5/5027 ,  H01S5/5063 ,  H01S5/5072 ,  H01S2301/02

摘要： A semiconductor optical amplifier (SOA) apparatus and related methods are described. The SOA comprises a signal waveguide for guiding an optical signal along a signal path, and further comprises one or more laser cavities having a gain medium lying outside the signal waveguide, the gain medium being sufficiently close to the signal waveguide such that, when the gain medium is pumped with an excitation current, the optical signal traveling down the signal waveguide is amplified by an evanescent coupling effect with the laser cavity. When the gain medium is sufficiently pumped to cause lasing action in the laser cavity, gain-clamped amplification of the optical signal is achieved. Additional features relating to segmented laser cavities, separate pumping of laser cavity segments, DFB/DBR gratings, current profiling to improve ASE noise performance, coupled-cavity lasers, avoidance of injection locking effects, manipulation of gain curve peaks, integration with a tunable vertical cavity coupler, integration with a photodetector, integration with an RZ signal modulator, and other described features may be used with the evanescent coupling case or with an SOA having a laser cavity gain medium that is coextensive with the gain medium of the signal waveguide.

摘要翻译： 描述了一种半导体光放大器（SOA）装置及相关方法。 SOA包括用于沿着信号路径引导光信号的信号波导，并且还包括一个或多个具有位于信号波导外部的增益介质的激光腔，增益介质足够靠近信号波导，使得当增益 介质用激励电流泵浦，沿信号波导下行的光信号通过与激光腔的ev逝耦合效应放大。 当增益介质被充分泵送以在激光腔中引起激光作用时，实现光信号的增益钳位放大。 与分段激光腔相关的附加特征，激光腔段的独立泵浦，DFB / DBR光栅，电流分析以改善ASE噪声性能，耦合腔激光器，避免注入锁定效应，操纵增益曲线峰值，与可调谐垂直线 空腔耦合器，与光电检测器的集成，与RZ信号调制器的集成以及其它所描述的特征可以与ev逝耦合壳体或具有与信号波导的增益介质共同延伸的激光腔增益介质的SOA一起使用。

公开(公告)号：US06876687B2

公开(公告)日：2005-04-05

申请号：US10602139

申请日：2003-06-23

申请人： Zuhua Zhu ,  Shih-Yuan Wang

发明人： Zuhua Zhu ,  Shih-Yuan Wang

IPC分类号： H01L33/00 ,  H01S5/183 ,  H01S5/20 ,  H04B10/155 ,  H01S5/00

CPC分类号： H01S5/18316 ,  H01S5/18308 ,  H01S5/18333 ,  H01S5/2063 ,  H01S5/2086 ,  H01S2301/166 ,  H01S2301/176 ,  H04B10/503

摘要： A vertical cavity surface emitting laser (VCSEL) structure and fabrication method therefor are described in which a subsurface air, gas, or vacuum current confinement method is used to restrict the area of electrical flow in the active region. Using vertical hollow shafts to access a subsurface current confinement layer, a selective lateral etching process is used to form a plurality of subsurface cavities in the current confinement layer, the lateral etching process continuing until the subsurface cavities laterally merge to form a single subsurface circumferential cavity that surrounds a desired current confinement zone. Because the subsurface circumferential cavity is filled with air, gas, or vacuum, the stresses associated with oxidation-based current confinement methods are avoided. Additionally, because the confinement is achieved by subsurface cavity structures, overall mechanical strength of the current-confining region is maintained.

摘要翻译： 描述了垂直腔表面发射激光器（VCSEL）结构及其制造方法，其中使用地下空气，气体或真空电流限制方法来限制有源区域中的电流的面积。 使用垂直空心轴来接近地下电流限制层，选择性横向蚀刻工艺用于在电流限制层中形成多个次表面空腔，横向蚀刻工艺继续进行，直到地下空腔横向合并形成单个地下圆周腔 其围绕期望的电流限制区。 因为地下圆周空腔充满了空气，气体或真空，所以避免了与基于氧化的电流限制方法相关的应力。 此外，由于限制是通过地下空腔结构实现的，因此保持了电流限制区域的总体机械强度。

公开(公告)号：US06589805B2

公开(公告)日：2003-07-08

申请号：US10106991

申请日：2002-03-26

申请人： Zuhua Zhu ,  Shih-Yuan Wang

发明人： Zuhua Zhu ,  Shih-Yuan Wang

IPC分类号： H01L21302

CPC分类号： H01S5/18316 ,  H01S5/18308 ,  H01S5/18333 ,  H01S5/2063 ,  H01S5/2086 ,  H01S2301/166 ,  H01S2301/176 ,  H04B10/503

摘要： A vertical cavity surface emitting laser (VCSEL) structure and fabrication method therefor are described in which a subsurface air, gas, or vacuum current confinement method is used to restrict the area of electrical flow in the active region. Using vertical hollow shafts to access a subsurface current confinement layer, a selective lateral etching process is used to form a plurality of subsurface cavities in the current confinement layer, the lateral etching process continuing until the subsurface cavities laterally merge to form a single subsurface circumferential cavity that surrounds a desired current confinement zone. Because the subsurface circumferential cavity is filled with air, gas, or vacuum, the stresses associated with oxidation-based current confinement methods are avoided. Additionally, because the confinement is achieved by subsurface cavity structures, overall mechanical strength of the current-confining region is maintained.

公开(公告)号：US06878958B2

公开(公告)日：2005-04-12

申请号：US10106929

申请日：2002-03-26

申请人： Zuhua Zhu

发明人： Zuhua Zhu

IPC分类号： H01L33/00 ,  H01S5/183 ,  H01S5/20 ,  H04B10/155 ,  H04J14/02 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H04B10/503 ,  H01S5/0207 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2063 ,  H01S5/423 ,  H01S2304/12 ,  H04J14/02

摘要： A vertical cavity surface-emitting laser (VCSEL) structure and related fabrication methods are described, the VCSEL comprising amorphous dielectric distributed Bragg reflectors (DBRs) while also being capable of fabrication in a single-growth process. Beginning with a substrate such as InP, a first amorphous dielectric DBR structure is deposited thereon, but is limited in width such that some substrate material remains uncovered by the dielectric material. A lateral overgrowth layer is then formed by epitaxially growing material such as InP onto the substrate, the lateral overgrowth layer eventually burying the dielectric DBR structure as well as the previously-uncovered substrate material. Active layers may then be epitaxially grown on the lateral overgrowth layer, and a top dielectric DBR may be deposited thereon using conventional techniques. To save vertical space between DBRs, the first DBR may be deposited in a non-reentrant well formed in the surface of a substrate. A dual lateral overgrowth method for further reducing dislocations above a lower buried dielectric DBR of a VCSEL is also described.

摘要翻译： 描述了垂直腔表面发射激光器（VCSEL）结构和相关的制造方法，VCSEL包括非晶介质分布布拉格反射器（DBR），同时也能够在单增长过程中制造。 从诸如InP的衬底开始，在其上沉积第一非晶介质DBR结构，但其宽度受到限制，使得某些衬底材料保持未被电介质材料覆盖。 然后通过在衬底上外延生长诸如InP的材料来形成横向过度生长层，侧向过度生长层最终掩埋电介质DBR结构以及先前未被覆盖的衬底材料。 然后可以在横向过度生长层上外延生长活性层，并且可以使用常规技术在其上沉积顶部电介质DBR。 为了节省DBR之间的垂直空间，可以将第一DBR沉积在形成在衬底表面中的非凹陷阱中。 还描述了用于进一步减少VCSEL的下埋置介质DBR之上的位错的双横向过度生长方法。

公开(公告)号：US06406795B1

公开(公告)日：2002-06-18

申请号：US09426273

申请日：1999-10-25

申请人： Wen-Yen Hwang ,  Yucai Zhou ,  Zuhua Zhu ,  Yu-Hwa Lo

发明人： Wen-Yen Hwang ,  Yucai Zhou ,  Zuhua Zhu ,  Yu-Hwa Lo

IPC分类号： B32B1504

CPC分类号： H01L27/14632 ,  B82Y20/00 ,  H01L21/76256 ,  H01L29/205 ,  H01L31/02162 ,  H01L31/035236 ,  H01L31/09 ,  H01L33/0079 ,  H01S5/0206 ,  H01S5/3402 ,  Y10T428/12528 ,  Y10T428/31678

摘要： A compliant substrate for the formation of semiconductor devices includes a crystalline base layer and a thin-film crystalline layer on and loosely bonded to the base layers. The thin-film layer has a high degree of lattice flexibility. A compliant substrate for formation of semiconductor devices may also include a crystalline base layer, and, on the base layer, a thin film layer having a lattice constant different from the lattice constant of the base layer. A method for formation of a compliant substrate for formation of semiconductor devices includes forming a thin film layer on a first substrate, bonding a first surface of the thin film layer to a surface of a second substrate having a lattice constant different from the lattice constant of the thin film layer either with or without twist bonding, and removing the first substrate to expose a second surface of the thin film layer.

摘要翻译： 用于形成半导体器件的柔性衬底包括晶体基底层和薄膜结晶层，并且松散地结合到基底层。 薄膜层具有高度的晶格柔性。 用于形成半导体器件的兼容衬底还可以包括晶体基底层，并且在基底层上具有不同于基底层的晶格常数的晶格常数的薄膜层。 用于形成用于形成半导体器件的柔性衬底的方法包括在第一衬底上形成薄膜层，将薄膜层的第一表面粘合到具有不同于晶格常数的晶格常数的第二衬底的表面 所述薄膜层具有或不具有扭曲结合，以及移除所述第一基板以暴露所述薄膜层的第二表面。

公开(公告)号：US06459716B1

公开(公告)日：2002-10-01

申请号：US09773765

申请日：2001-02-01

申请人： Yu-Hwa Lo ,  Zuhua Zhu ,  Shabbir Bashar

发明人： Yu-Hwa Lo ,  Zuhua Zhu ,  Shabbir Bashar

IPC分类号： H01S5026

CPC分类号： H01S5/18 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0267 ,  H01S5/12

摘要： An integrated surface emitting laser and modulator device is disclosed that includes a detector for monitoring the optical power output of the laser and another detector for monitoring an extinction ratio of the modulator. A cleave physically and electrically separates the laser from the modulator device. The device has a collimating lens disposed on a top surface.

摘要翻译： 公开了一种集成表面发射激光器和调制器装置，其包括用于监测激光器的光功率输出的检测器和用于监视调制器的消光比的另一检测器。 劈开物理和电气分离激光器与调制器装置。 该装置具有设置在顶表面上的准直透镜。

公开(公告)号：US06199748B1

公开(公告)日：2001-03-13

申请号：US09378769

申请日：1999-08-20

申请人： Zuhua Zhu ,  Tuoh-Bin Ng ,  Yu-Hwa Lo

发明人： Zuhua Zhu ,  Tuoh-Bin Ng ,  Yu-Hwa Lo

IPC分类号： B23K3102

CPC分类号： B23K20/023

摘要： A method of semiconductor eutectic alloy metal (SEAM) technology for integration of heterogeneous materials and fabrication of compliant composite substrates takes advantage of eutectic properties of alloys. Sub1 and Sub2 are used to represent the two heterogeneous materials to be bonded or composed into a compliant composite substrate. For the purpose of fabricating compliant composite substrate, the first substrate material (Sub1) combines with the second substrate material (Sub2) to form a composite substrate that controls the stress in the epitaxial layers during cooling. The second substrate material (Sub2) controls the stress in the epitaxial layer grown thereon so that it is compressive during annealing. A joint metal (JM) with a melting point of Tm is chosen to offer variable joint stiffness at different temperatures. JM and Sub1 form a first eutectic alloy at a first eutectic temperature Teu1 while JM and Sub2 form a second eutectic alloy at a second eutectic temperature Teu2. Tm1 and Tm2 are the melting points of Sub1 and Sub2, respectively. The following condition should be met: Tm1, Tm2>Tm>Teu1, Teu2. After cleaning of Sub1 and Sub2, JM is deposited on the bonding sides of Sub1 and Sub2. After preliminary bonding by applying force to press the bonding surfaces together at room temperature, high temperature bonding is subsequently performed, during which the temperature is ramped up to a temperature equal to or higher than Tm. During cooling, JM solidifies first, after which two eutectic alloys solidify.

摘要翻译： 半导体共晶合金金属（SEAM）技术用于整合异质材料和制造合适的复合材料的方法利用了合金的共晶性能。 Sub1和Sub2用于表示待结合或组成合适的复合衬底的两种异质材料。 为了制造合适的复合衬底，第一衬底材料（Sub1）与第二衬底材料（Sub2）组合以形成控制冷却期间外延层中的应力的复合衬底。 第二衬底材料（Sub2）控制在其上生长的外延层中的应力，使得其在退火期间是压缩的。 选择熔点为Tm的接头金属（JM），以在不同的温度下提供可变接头刚度。 JM和Sub1在第一共晶温度Teu1下形成第一共晶合金，而JM和Sub2在第二共晶温度Teu2下形成第二共晶合金。 Tm1和Tm2分别是Sub1和Sub2的熔点。 应满足以下条件：Tm1，Tm2> Tm> Teu1，Teu2。 在清洗Sub1和Sub2之后，JM沉积在Sub1和Sub2的粘合侧上。 在室温下通过施加力将结合面压合在一起进行初步接合之后，随后进行高温接合，在此期间温度升高至等于或高于Tm的温度。 在冷却过程中，首先固化，然后两个共晶合金固化。