公开(公告)号：US08679955B2

公开(公告)日：2014-03-25

申请号：US13202419

申请日：2010-02-10

申请人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Hideaki Nakahata ,  Shinsuke Fujiwara

发明人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Hideaki Nakahata ,  Shinsuke Fujiwara

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C30B25/02 ,  C30B29/16 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007

摘要： A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.

摘要翻译： 提供了一种用于形成外延晶片的方法，其可以在氧化镓区域上使得能够以良好的晶体质量生长氮化镓基半导体。 在步骤S107中，生长AlN缓冲层13。 在步骤S108中，在时刻t5，将除了氮以外的氢，三甲基铝和氨的原料气G1供给到生长反应器10中，以在主面11a上生长AlN缓冲层13。 AlN缓冲层13被称为低温缓冲层。 在开始形成缓冲层13之后，在步骤S109中，在时刻t6开始供给氢（H2）。 在时间t6，H2，N2，TMA和NH3被供应到生长反应器10中。在时间t6和t7之间，氢的供应量增加，而在时间t7，氢的增加被终止以提供恒定的量 的氢。 在时间t7，将H2，TMA和NH3供应到生长反应器10中。

公开(公告)号：US20120070929A1

公开(公告)日：2012-03-22

申请号：US13318039

申请日：2010-03-01

申请人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Shinsuke Fujiwara ,  Hideaki Nakahata

发明人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC分类号： H01L33/36 ,  H01L21/20

CPC分类号： C23C16/0227 ,  C23C16/0272 ,  C23C16/303 ,  C30B25/183 ,  C30B29/406 ,  H01L33/007

摘要： Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S105, a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11a of a gallium oxide substrate 11. After the growth of the buffer layer 13, while supplying a gas G2, which contains hydrogen and nitrogen, into a growth reactor 10, the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.

摘要翻译： 本发明提供一种制造晶片产品的方法，该晶片产品包括在氧化镓衬底上生长的有源层并且能够提高发光强度。 在步骤S105中，在氧化镓衬底11的主表面11a上以600摄氏度生长由诸如GaN，AlGaN或AlN的III族氮化物构成的缓冲层13.在缓冲层13生长之后，同时 将含有氢和氮的气体G2供给到生长反应器10中，将氧化镓衬底11和缓冲层13在生长反应器11中的气氛中以1050摄氏度暴露。 在改性缓冲层上生长III族氮化物半导体层15。 改性缓冲层包括例如空隙。 III族氮化物半导体层15可以由GaN和AlGaN构成。 当由这些材料形成III族氮化物半导体层15时，在改性缓冲层14上获得优异的晶体质量。

公开(公告)号：US08592289B2

公开(公告)日：2013-11-26

申请号：US13148543

申请日：2010-02-04

申请人： Shin Hashimoto ,  Katsushi Akita ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Kensaku Motoki

发明人： Shin Hashimoto ,  Katsushi Akita ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Kensaku Motoki

IPC分类号： H01L21/20 ,  H01L21/36 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L21/0242 ,  C30B25/18 ,  C30B29/16 ,  C30B29/403 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/16

摘要： A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base 32 having a primary surface 32a of monoclinic gallium oxide, and a laminate structure 33 of Group III nitride. A semiconductor mesa of the laminate structure 33 includes a low-temperature GaN buffer layer 35, an n-type GaN layer 37, an active layer 39 of a quantum well structure, and a p-type gallium nitride based semiconductor layer 37. The p-type gallium nitride based semiconductor layer 37 includes, for example, a p-type AlGaN electron block layer and a p-type GaN contact layer. The primary surface 32a of the gallium oxide support base 32 is inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of monoclinic gallium oxide. Owing to this inclination, the gallium nitride based semiconductor epitaxially grown on the primary surface 32a of the gallium oxide support base has a flat surface.

摘要翻译： 提供了一种氮化镓基半导体器件，其包括在氧化镓晶片上设置有平坦c面的氮化镓基半导体膜。 发光二极管LED包括具有单斜氧化镓的主表面32a的氧化镓载体基底32和III族氮化物的叠层结构33。 层压结构33的半导体台面包括低温GaN缓冲层35，n型GaN层37，量子阱结构的有源层39和p型氮化镓基半导体层37. p 型氮化镓系半导体层37例如包括p型AlGaN电子阻挡层和p型GaN接触层。 氧化镓载体基体32的主表面32a相对于单斜晶系氧化镓的（100）面倾斜2度以上4度以下。 由于该倾斜，在氧化镓载体基体的主表面32a上外延生长的氮化镓基半导体具有平坦的表面。

公开(公告)号：US08415180B2

公开(公告)日：2013-04-09

申请号：US13318039

申请日：2010-03-01

申请人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Shinsuke Fujiwara ,  Hideaki Nakahata

发明人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC分类号： H01L21/00

CPC分类号： C23C16/0227 ,  C23C16/0272 ,  C23C16/303 ,  C30B25/183 ,  C30B29/406 ,  H01L33/007

摘要： Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S105, a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11a of a gallium oxide substrate 11. After the growth of the buffer layer 13, while supplying a gas G2, which contains hydrogen and nitrogen, into a growth reactor 10, the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.

摘要翻译： 本发明提供一种制造晶片产品的方法，该晶片产品包括在氧化镓衬底上生长的有源层并且能够提高发光强度。 在步骤S105中，在氧化镓衬底11的主表面11a上以600摄氏度生长由诸如GaN，AlGaN或AlN的III族氮化物构成的缓冲层13.在缓冲层13生长之后，同时 将含有氢和氮的气体G2供给到生长反应器10中，将氧化镓衬底11和缓冲层13在生长反应器11中的气氛中以1050摄氏度暴露。 在改性缓冲层上生长III族氮化物半导体层15。 改性缓冲层包括例如空隙。 III族氮化物半导体层15可以由GaN和AlGaN构成。 当由这些材料形成III族氮化物半导体层15时，在改性缓冲层14上获得优异的晶体质量。

公开(公告)号：US20120003770A1

公开(公告)日：2012-01-05

申请号：US13202419

申请日：2010-02-10

申请人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Hideaki Nakahata ,  Shinsuke Fujiwara

发明人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Hideaki Nakahata ,  Shinsuke Fujiwara

IPC分类号： H01L21/20 ,  H01L33/32 ,  B82Y40/00

CPC分类号： H01L21/0262 ,  C30B25/02 ,  C30B29/16 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007

摘要： A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.

摘要翻译： 提供了一种用于形成外延晶片的方法，其可以在氧化镓区域上使得能够以良好的晶体质量生长氮化镓基半导体。 在步骤S107中，生长AlN缓冲层13。 在步骤S108中，在时刻t5，将除了氮以外的氢，三甲基铝和氨的原料气G1供给到生长反应器10中，以在主面11a上生长AlN缓冲层13。 AlN缓冲层13被称为低温缓冲层。 在开始形成缓冲层13之后，在步骤S109中，在时刻t6开始供给氢（H2）。 在时间t6，H2，N2，TMA和NH3被供应到生长反应器10中。在时间t6和t7之间，氢的供应量增加，而在时间t7，氢的增加被终止以提供恒定的量 的氢。 在时间t7，将H2，TMA和NH3供应到生长反应器10中。

公开(公告)号：US20110315998A1

公开(公告)日：2011-12-29

申请号：US13148543

申请日：2010-02-04

申请人： Shin Hashimoto ,  Katsushi Akita ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Kensaku Motoki

发明人： Shin Hashimoto ,  Katsushi Akita ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Kensaku Motoki

IPC分类号： H01L29/20 ,  C01G15/00 ,  H01L21/20

CPC分类号： H01L21/0242 ,  C30B25/18 ,  C30B29/16 ,  C30B29/403 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/16

摘要： A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base 32 having a primary surface 32a of monoclinic gallium oxide, and a laminate structure 33 of Group III nitride. A semiconductor mesa of the laminate structure 33 includes a low-temperature GaN buffer layer 35, an n-type GaN layer 37, an active layer 39 of a quantum well structure, and a p-type gallium nitride based semiconductor layer 37. The p-type gallium nitride based semiconductor layer 37 includes, for example, a p-type AlGaN electron block layer and a p-type GaN contact layer. The primary surface 32a of the gallium oxide support base 32 is inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of monoclinic gallium oxide. Owing to this inclination, the gallium nitride based semiconductor epitaxially grown on the primary surface 32a of the gallium oxide support base has a flat surface.

摘要翻译： 提供了一种氮化镓基半导体器件，其包括在氧化镓晶片上设置有平坦c面的氮化镓基半导体膜。 发光二极管LED包括具有单斜氧化镓的主表面32a的氧化镓载体基底32和III族氮化物的叠层结构33。 层压结构33的半导体台面包括低温GaN缓冲层35，n型GaN层37，量子阱结构的有源层39和p型氮化镓基半导体层37. p 型氮化镓系半导体层37例如包括p型AlGaN电子阻挡层和p型GaN接触层。 氧化镓载体基体32的主表面32a相对于单斜晶系氧化镓的（100）面倾斜2度以上4度以下。 由于该倾斜，在氧化镓载体基体的主表面32a上外延生长的氮化镓基半导体具有平坦的表面。

公开(公告)号：US20080296610A1

公开(公告)日：2008-12-04

申请号：US12125293

申请日：2008-05-22

申请人： Katsushi AKITA ,  Hitoshi Kasai ,  Yoshiki Miura ,  Kensaku Motoki

发明人： Katsushi AKITA ,  Hitoshi Kasai ,  Yoshiki Miura ,  Kensaku Motoki

IPC分类号： H01L33/00

CPC分类号： H01S5/22 ,  H01L33/12 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2201 ,  H01S5/32341 ,  H01S2304/12

摘要： For a semiconductor laser, a stacked member comprising an active layer is formed on the surface of a GaN single-crystal substrate, a defect aggregation portion is formed on the rear face of the GaN single-crystal substrate, and an electrode is formed so as to be electrically connected to the defect aggregation portion on the rear face. The defect aggregation portion of this semiconductor laser has numerous crystal defects, and so the carrier concentration is high, and the electrical resistivity is lowered significantly. For this reason, in a semiconductor laser of this invention in which an electrode is formed on this defect aggregation portion, an Ohmic contact can easily be obtained between the GaN single-crystal substrate and the electrode, and by this means a lowered driving voltage is realized.

摘要翻译： 对于半导体激光器，在GaN单晶衬底的表面上形成包括有源层的层叠构件，在GaN单晶衬底的背面上形成缺陷聚集部分，形成电极，使得 电连接到背面上的缺陷聚集部分。 该半导体激光器的缺陷聚集部分具有许多晶体缺陷，因此载流子浓度高，并且电阻率显着降低。 因此，在本发明的半导体激光器中，在该缺陷聚集部分上形成电极，可以容易地在GaN单晶衬底和电极之间获得欧姆接触，并且由此降低驱动电压 实现了

公开(公告)号：US07915635B2

公开(公告)日：2011-03-29

申请号：US12125293

申请日：2008-05-22

申请人： Katsushi Akita ,  Hitoshi Kasai ,  Yoshiki Miura ,  Kensaku Motoki

发明人： Katsushi Akita ,  Hitoshi Kasai ,  Yoshiki Miura ,  Kensaku Motoki

IPC分类号： H01L33/00

CPC分类号： H01S5/22 ,  H01L33/12 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2201 ,  H01S5/32341 ,  H01S2304/12

摘要： For a semiconductor laser, a stacked member comprising an active layer is formed on the surface of a GaN single-crystal substrate, a defect aggregation portion is formed on the rear face of the GaN single-crystal substrate, and an electrode is formed so as to be electrically connected to the defect aggregation portion on the rear face. The defect aggregation portion of this semiconductor laser has numerous crystal defects, and so the carrier concentration is high, and the electrical resistivity is lowered significantly. For this reason, in a semiconductor laser of this invention in which an electrode is formed on this defect aggregation portion, an Ohmic contact can easily be obtained between the GaN single-crystal substrate and the electrode, and by this means a lowered driving voltage is realized.

摘要翻译： 对于半导体激光器，在GaN单晶衬底的表面上形成包括有源层的层叠构件，在GaN单晶衬底的背面上形成缺陷聚集部分，形成电极，使得 电连接到背面上的缺陷聚集部分。 该半导体激光器的缺陷聚集部分具有许多晶体缺陷，因此载流子浓度高，并且电阻率显着降低。 为此，在本发明的半导体激光器中，在该缺陷聚集部分上形成电极，可以容易地在GaN单晶衬底和电极之间获得欧姆接触，并且由此降低驱动电压 实现了

公开(公告)号：US07968864B2

公开(公告)日：2011-06-28

申请号：US12390036

申请日：2009-02-20

申请人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

发明人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333

摘要： A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InXGa1-XN (0.15≦X

摘要翻译： 提供III族氮化物发光器件。 具有量子阱结构的有源层在氮化镓基半导体区域的基底面上生长。 量子阱结构形成为具有410nm以上的发光峰值波长。 阱层的厚度为4nm以上，10nm以下。 阱层由InXGa1-XN（0.15＆nlE; X <1，其中X是应变组成）组成。 氮化镓基半导体区域的基面相对于六边形系统的{0001}面或{000-1}面以15度以上且85度以下的倾斜角度倾斜 III族氮化物。 该范围内的基面是半极性平面。

公开(公告)号：US20080299694A1

公开(公告)日：2008-12-04

申请号：US12127286

申请日：2008-05-27

申请人： Katsushi AKITA ,  Hitoshi Kasai ,  Yoshiki Miura ,  Kensaku Motoki

发明人： Katsushi AKITA ,  Hitoshi Kasai ,  Yoshiki Miura ,  Kensaku Motoki

IPC分类号： H01L33/00

CPC分类号： H01S5/32341 ,  H01S5/0202 ,  H01S5/2201 ,  H01S5/3202 ,  H01S2301/173 ,  H01S2304/12

摘要： In a semiconductor laser manufacturing method, a GaN single-crystal substrate is formed by slicing a GaN bulk crystal, grown on a c-plane, parallel to an a-plane which is perpendicular to the c-plane. In this substrate, crystal defects extending parallel to the c-axis direction do not readily exert an influence, and degradation of element characteristics due to crystal defects can be suppressed. Further, because the a-plane is a nonpolar plane, improved light emission efficiency and longer wavelengths can be achieved compared with the c-plane, which is a polar plane. Hence a semiconductor laser manufacturing method of this invention enables further improvement of the element characteristics of the semiconductor laser to be fabricated.

摘要翻译： 在半导体激光器制造方法中，通过在与c面垂直的a面平行的c面上生长的GaN块状晶体来形成GaN单晶衬底。 在该基板中，与c轴方向平行延伸的晶体缺陷不容易产生影响，可以抑制由于晶体缺陷引起的元件特性的劣化。 此外，由于a平面是非极性平面，与作为极平面的c面相比，可以实现提高的发光效率和更长的波长。 因此，本发明的半导体激光器制造方法能够进一步提高要制造的半导体激光器的元件特性。