利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

33 条记录 (耗时 0.037 秒)

    Photoelectric conversion device
    2.
    发明授权
    Photoelectric conversion device 失效

    公开(公告)号：US06620997B2

    公开(公告)日：2003-09-16

    申请号：US10046017

    申请日：2001-10-29

    申请人： Takeshi Kyoda ,  Shin Sugawara ,  Hisao Arimune ,  Nobuyuki Kitahara

    发明人： Takeshi Kyoda ,  Shin Sugawara ,  Hisao Arimune ,  Nobuyuki Kitahara

    IPC分类号： H01L310352

    CPC分类号： H01L31/035281 ,  H01L31/022425 ,  H01L31/03529 ,  Y02E10/50

    摘要： In a photoelectric conversion device having numerous crystalline semiconductor grains deposited on a substrate, the substrate includes an aluminum layer or an aluminum alloy layer, an intermediate layer, and a base material layer, in which the intermediate layer is arranged such that it is composed mainly of one or a plurality of elements selected from among nickel, titanium, chromium, and cobalt. With the constitution as above, it is possible to suppress reaction between the aluminum electrode layer and the base material layer, thereby maintaining the high adhesiveness of the aluminum electrode layer. A photoelectric conversion device with high reliability and high conversion efficiency is therefore realized.

    Photoelectric conversion device and manufacturing method thereof
    4.
    发明授权
    Photoelectric conversion device and manufacturing method thereof 失效
    光电转换装置及其制造方法

    公开(公告)号：US06552405B2

    公开(公告)日：2003-04-22

    申请号：US09916868

    申请日：2001-07-26

    申请人： Shin Sugawara ,  Takeshi Kyoda ,  Hisao Arimune

    发明人： Shin Sugawara ,  Takeshi Kyoda ,  Hisao Arimune

    IPC分类号： H01L3106

    CPC分类号： H01L31/1804 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/061 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

    摘要： A photoelectric conversion device according to the present invention comprises an aluminum substrate or a substrate formed with an aluminum layer thereon, numerous p type crystalline semiconductor particles deposited on the substrate, an insulator interposed among the numerous p type crystalline semiconductor particles, and a n type semiconductor region formed on the upper portions of the p type crystalline semiconductor particles. An alloy portion comprising the aluminum and the semiconductor material is formed in a boundary part between the aluminum layer and the p type crystalline semiconductor particles, and a p+ region is formed in an interfacial part between the alloy portion and the p type crystalline semiconductor particle on the side of the p type crystalline semiconductor particle. Accordingly, reliability of the joining condition between the substrate and the crystalline semiconductor particles can be improved, thereby realizing a photoelectric conversion device having high conversion efficiency.

    摘要翻译： 根据本发明的光电转换装置包括铝基板或在其上形成有铝层的基板，沉积在基板上的许多p型晶体半导体颗粒，插入在多个p型晶体半导体颗粒中的绝缘体和类型半导体 区域形成在p型结晶半导体颗粒的上部。 在铝层和p型结晶半导体颗粒之间的边界部分中形成包含铝和半导体材料的合金部分，并且在合金部分和p型晶体半导体颗粒之间的界面部分中形成p +区域 p型结晶半导体颗粒的侧面。因此，可以提高基板和结晶半导体颗粒之间的接合条件的可靠性，从而实现具有高转换效率的光电转换装置。

    Photoelectric conversion device
    5.
    发明授权
    Photoelectric conversion device 失效
    光电转换装置

    公开(公告)号：US06610920B2

    公开(公告)日：2003-08-26

    申请号：US09965449

    申请日：2001-09-26

    申请人： Shin Sugawara ,  Takeshi Kyoda ,  Hisao Arimune

    发明人： Shin Sugawara ,  Takeshi Kyoda ,  Hisao Arimune

    IPC分类号： H01L310256

    CPC分类号： C30B29/60 ,  C01B33/021 ,  C30B29/06 ,  C30B30/08 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Plasma is generated from a plasma generating gas comprising an inert gas and hydrogen gas. Silicon material is passed through the plasma and heated so as to form a crystalline silicon particle containing hydrogen at a concentration of 1×1016-1×1020. A great number of the crystalline silicon particles of p-type or n-type are deposited on a substrate as the electrode of one side. An insulator is formed among the crystalline silicon particles on the substrate, and a n-type or p-type semiconductor layer is formed over the crystalline silicon particles, thereby fabricating a photoelectric conversion device. The photoelectric conversion device using the crystalline silicon particles exhibits high photoelectric conversion efficiency.

    摘要翻译： 从包含惰性气体和氢气的等离子体产生气体产生等离子体。 将硅材料通过等离子体并加热，以形成浓度为1×10 16 -1×10 20的含氢的结晶硅颗粒。 大量的p型或n型晶体硅颗粒作为一侧的电极沉积在基板上。 在基板上的结晶硅颗粒之间形成绝缘体，在结晶硅颗粒上形成n型或p型半导体层，由此制造光电转换装置。 使用结晶硅粒子的光电转换装置具有高的光电转换效率。

    Photoelectric conversion device and manufacturing method thereof
    7.
    发明授权
    Photoelectric conversion device and manufacturing method thereof 失效
    光电转换装置及其制造方法

    公开(公告)号：US06437234B1

    公开(公告)日：2002-08-20

    申请号：US09917140

    申请日：2001-07-26

    申请人： Takeshi Kyoda ,  Shin Sugawara ,  Hisao Arimune

    发明人： Takeshi Kyoda ,  Shin Sugawara ,  Hisao Arimune

    IPC分类号： H01L310352

    CPC分类号： H01L31/03921 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0747 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

    摘要： A method of manufacturing a photoelectric conversion device according to the present invention comprises the steps of: applying numerous glass particles having a particle size before baking being 5 to 25% of that of crystalline semiconductor particles to a substrate having an electrode of one side; depositing the crystalline semiconductor particles on the layer of the glass particles; pressing the crystalline semiconductor particles against the substrate; and subjecting them to baking, whereby manufacturing a photoelectric conversion device in which the crystalline semiconductor particles and the substrate have been joined together as well as an insulator has been interposed among the crystalline semiconductor particles. Accordingly, the photoelectric conversion device has good conversion efficiency and is manufactured at a low cost.

    摘要翻译： 根据本发明的光电转换装置的制造方法包括以下步骤：将具有结晶半导体颗粒的5〜25％的烘烤前的粒径的多个玻璃粒子涂布到具有一面电极的基板上; 将晶体半导体颗粒沉积在玻璃颗粒层上; 将晶体半导体颗粒压在衬底上; 并对其进行烘烤，由此制造结晶半导体颗粒和基板已经接合在一起的光电转换装置以及绝缘体已经插入在结晶半导体颗粒中。 因此，光电转换装置具有良好的转换效率并以低成本制造。

    Method for manufacturing granular silicon crystal
    9.
    发明申请
    Method for manufacturing granular silicon crystal 失效
    颗粒状硅晶体的制造方法

    公开(公告)号：US20060213427A1

    公开(公告)日：2006-09-28

    申请号：US11387624

    申请日：2006-03-22

    申请人： Shin Sugawara ,  Eigo Takahashi ,  Nobuyuki Kitahara ,  Yoshio Miura ,  Hisao Arimune

    发明人： Shin Sugawara ,  Eigo Takahashi ,  Nobuyuki Kitahara ,  Yoshio Miura ,  Hisao Arimune

    IPC分类号： C30B11/00 ,  C30B17/00 ,  C30B9/00 ,  C30B21/02 ,  C30B28/06

    CPC分类号： C30B11/00 ,  C30B29/06 ,  C30B29/36 ,  C30B29/38 ,  C30B29/607 ,  Y10T117/1056

    摘要： In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during falling, a carbon source is added when the nozzle part is composed of silicon carbide, and a nitrogen source is added when the nozzle part is composed of silicon nitride, to the silicon melt in the crucible. Thereby, melt droplets of uniform size can be generated, so that granular silicon crystals having narrow variations in particle size can be manufactured at high productivity and superior reproducibility.

    摘要翻译： 在通过使坩埚中的硅熔体从由碳化硅或氮化硅构成的喷嘴部粒状地排出并落下而制造粒状硅晶体的方法中，在下降时使粒状硅熔体冷却固化，添加碳源 当喷嘴部分由碳化硅组成时，并且当喷嘴部分由氮化硅组成时，将氮源添加到坩埚中的硅熔体。 因此，可以产生均匀尺寸的熔融液滴，从而可以以高生产率和优异的再现性制造具有窄粒度变化的粒状硅晶体。