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公开(公告)号：US20230418158A1
公开(公告)日：2023-12-28
申请号：US18317019
申请日：2023-05-12
发明人： Masahiro FUKUSHIMA , Satoshi WATANABE , Jun HATAKEYAMA , Keiichi MASUNAGA , Masaaki KOTAKE , Yuta MATSUZAWA
IPC分类号： G03F7/004 , C07C381/12 , C07D307/00 , C07C309/73 , C07C309/42 , C07C309/12 , C07D321/10 , C07D327/08
CPC分类号： G03F7/0045 , C07C381/12 , C07D307/00 , C07C309/73 , C07C309/42 , C07C309/12 , C07D321/10 , C07D327/08 , C07C2601/08 , C07C2602/42 , C07C2601/14 , C07C2603/68
摘要： The present invention is a sulfonium salt represented by the following formula (1),
wherein “p” represents an integer of 1 to 3; R11 represents a hydrocarbyl group having 1 to 20 carbon atoms; Rf represents a fluorine atom or a fluorine-atom-containing C1 to C6 group selected from alkyl, alkoxy, and sulfide; “q” represents an integer of 1 to 4; RALU represents an acid-labile group; “r” represents an integer of 1 to 4; R12 represents a hydrocarbyl group having 1 to 20 carbon atoms; “s” represents an integer of 0 to 4; “t” represents an integer of 0 to 2; Rf and —O—RALU are bonded to adjacent carbon atoms; and X− represents a non-nucleophilic counterion having no polymerizable group. This provides a sulfonium salt used for a resist composition having excellent solvent solubility, high sensitivity and high contrast, and excellent lithographic performance such as exposure latitude and LWR; a resist composition containing the sulfonium salt as a photoacid generator; and a patterning process using the resist composition.-
公开(公告)号：US20240219836A1
公开(公告)日：2024-07-04
申请号：US18531373
申请日：2023-12-06
CPC分类号： G03F7/11 , G03F7/0382 , G03F7/0392 , G03F7/2037 , G03F7/322
摘要： The present invention is a conductive polymer composition containing: (A) a polyaniline-based conductive polymer having at least one repeating unit of the formula (1); and (B) a hydrogencarbonate including a cation of the formula (2-1) or (2-2). Here, R1 to R4 each represent a hydrogen atom, an acidic group, a hydroxy group, a nitro group, a halogen atom, a linear or branched alkyl group, a hydrocarbon group containing a hetero atom, or a hydrocarbon group partially substituted with a halogen atom. X represents a monovalent alkali metal selected from lithium, sodium, potassium, and cesium, R101 to R104 each represent a hydrogen atom, an alkyl group, an alkenyl group, an oxoalkyl group, an oxoalkenyl group, an aryl group, an aralkyl group, or an aryloxoalkyl group. R101 and R102, R103 and R104, and R101, R102, and R104 optionally form a ring. This provides a conductive polymer composition that can form an antistatic film for electron beam resist writing.
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3.发明公开公开(公告)号：US20240134280A1
公开(公告)日：2024-04-25
申请号：US18370756
申请日：2023-09-20
发明人： Masahiro FUKUSHIMA , Satoshi WATANABE , Kenji FUNATSU , Keiichi MASUNAGA , Masaaki KOTAKE , Yuta MATSUZAWA
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2004 , G03F7/32
摘要： A polymer containing a structural unit including an aromatic hydroxy group bonded to a main chain, where the aromatic hydroxy group is protected by an acid-labile group represented by the following formula (ALU-1) and is deprotected by action of an acid to become alkali-soluble. This provides: a polymer that makes it possible to form a resist film with which it is possible to form a pattern having extremely high isolated space resolution, small LER, and excellent rectangularity, effects of development loading and residue defects being suppressed, and the pattern having etching resistance and suppressed pattern collapse in the produced resist pattern; a chemically amplified positive resist composition containing the polymer; a resist patterning process using the chemically amplified positive resist composition; and a mask blank including the chemically amplified positive resist composition.
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4.发明申请CHEMICALLY-AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERNING PROCESS USING THE SAME 有权使用该化合物的化学增效阴离子组合物和电阻图案方法公开(公告)号：US20150268556A1
公开(公告)日：2015-09-24
申请号：US14637013
申请日：2015-03-03
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0046 , G03F7/30
摘要： The present invention provides a chemically-amplified negative resist composition including a sulfonium salt capable of providing a pattern having an extremely high resolution with reduced line edge roughness, and also provides a resist patterning process using the same.The present invention was accomplished by a chemically-amplified negative resist composition including (A) a salt represented by the following general formula (1) and (B) a resin containing one or more kinds of repeating unit represented by the following general formulae (UN-1) and (UN-2) and a resist patterning process using the same.
摘要翻译： 本发明提供了一种化学放大型负性抗蚀剂组合物，其包括能够提供具有极高分辨率且线边缘粗糙度降低的图案的锍盐，并且还提供使用其的抗蚀剂图案化工艺。 本发明通过化学放大型负性抗蚀剂组合物实现，该组合物包含（A）由以下通式（1）表示的盐和（B）含有一种或多种由以下通式表示的重复单元的树脂 -1）和（UN-2）和使用其的抗蚀剂图案化工艺。
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5.发明申请公开(公告)号：US20150198876A1
公开(公告)日：2015-07-16
申请号：US14573871
申请日：2014-12-17
CPC分类号： G03F7/0392 , C07C61/125 , C07C61/29 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/322
摘要： The present invention provides the onium salt comprises the material represented by the following general formula (0-1), wherein Rf represents a fluorine atom or a trifluoromethyl group; Y represents a cyclic hydrocarbon group having 3 to 30 carbon atoms, the hydrogen atom in the cyclic hydrocarbon group may be substituted by a hetero atom itself or a monovalent hydrocarbon group which may be substituted by a hetero atom(s), and the hetero atom(s) may be interposed into the cyclic structure of the cyclic hydrocarbon group and the monovalent hydrocarbon group; and M+ represents a monovalent cation. There can be provided an onium salt which can improve resolution at the time of forming a pattern and give a pattern with less line edge roughness (LER) when it is used in a chemically amplified positive resist composition.
摘要翻译： 本发明提供的鎓盐包括由以下通式（0-1）表示的材料，其中Rf表示氟原子或三氟甲基; Y表示碳原子数3〜30的环状烃基，环状烃基中的氢原子可以被杂原子本身取代，也可以被可以被杂原子取代的一价烃基取代，杂原子 可以插入到环状烃基和一价烃基的环状结构中; M +表示一价阳离子。 可以提供鎓盐，其可以在形成图案时提高分辨率，并且当其用于化学放大的正性抗蚀剂组合物时，产生具有较少线边缘粗糙度（LER）的图案。
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公开(公告)号：US20150086909A1
公开(公告)日：2015-03-26
申请号：US14489229
申请日：2014-09-17
发明人： Takashi YOSHII , Yoshio KAWAI , Yukio INAZUKI , Satoshi WATANABE , Akira IKEDA , Toyohisa SAKURADA , Hideo KANEKO
IPC分类号： G03F1/50
CPC分类号： G03F1/26 , G03F1/0046 , G03F1/0076 , G03F1/32 , G03F1/50
摘要： The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the inorganic film, comprising: forming the silicon-containing inorganic film; heat treating the formed silicon-containing inorganic film at a temperature more than 200° C. under an atmosphere containing oxygen; performing a silylation process after the heat treatment; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development.
摘要翻译： 本发明涉及通过在含硅无机膜上进行甲硅烷基化处理后形成抗蚀膜而获得的光掩模坯料，并且提供一种在透明基板上至少含有含硅无机膜的光掩模坯料的制造方法， 在所述无机膜上具有抗蚀剂膜，其包含：形成所述含硅无机膜; 在含氧气氛下，在高于200℃的温度下热处理形成的含硅无机膜; 在热处理后进行甲硅烷基化处理; 然后通过涂布形成抗蚀剂膜。 该方法可以抑制由于显影后的抗蚀剂残留物等引起的缺陷的产生。
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公开(公告)号：US20150086908A1
公开(公告)日：2015-03-26
申请号：US14489019
申请日：2014-09-17
发明人： Yukio INAZUKI , Takashi YOSHII , Toyohisa SAKURADA , Akira IKEDA , Hideo KANEKO , Satoshi WATANABE , Yoshio KAWAI
IPC分类号： G03F1/38
CPC分类号： G03F1/26 , G03F1/0046 , G03F1/0076 , G03F1/32 , G03F1/38 , G03F1/50
摘要： The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the silicon-containing inorganic film, comprising: forming the silicon-containing inorganic film such that a surface that will contact the resist film has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent; performing a silylation process after forming the silicon-containing inorganic film; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development.
摘要翻译： 本发明涉及一种通过在含硅无机膜上进行甲硅烷基化处理后形成抗蚀剂膜得到的光掩模坯料，并提供一种在透明基板上至少含有含硅无机膜的光掩模坯料的制造方法， 在含硅无机膜上形成抗蚀膜，其特征在于，包括：形成所述含硅无机膜，使得与所述抗蚀剂膜接触的表面的氧浓度不低于55原子％且不大于75原子％ 在形成含硅无机膜之后进行甲硅烷基化处理; 然后通过涂布形成抗蚀剂膜。 该方法可以抑制由于显影后的抗蚀剂残留物等引起的缺陷的产生。
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公开(公告)号：US20190010119A1
公开(公告)日：2019-01-10
申请号：US16012124
申请日：2018-06-19
IPC分类号： C07C309/42 , C07C309/25 , C07C309/29 , C07C309/35 , C07C309/38 , C07C309/39 , C07C309/44 , C07C309/59 , C07C323/66 , G03F7/004 , G03F7/038 , G03F7/039
摘要： The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (B1). The present invention provides a resist composition that causes few defects and is excellent in lithography performance, having regulated acid diffusion, in photolithography using a high energy beam as a light source, and a resist patterning process using this resist composition.
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公开(公告)号：US20150198877A1
公开(公告)日：2015-07-16
申请号：US14586120
申请日：2014-12-30
CPC分类号： G03F7/027 , G03F1/50 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0388 , G03F7/2002 , G03F7/2037 , G03F7/26 , G03F7/30
摘要： The present invention provides the chemically amplified negative resist composition comprises an onium salt represented by the following general formula (0-1), a resin which becomes alkali insoluble by an action of an acid and an acid generator, wherein Rf represents a fluorine atom or a trifluoromethyl group; Y represents a cyclic hydrocarbon group having 3 to 30 carbon atoms, the hydrogen atom in the cyclic hydrocarbon group may be substituted by a hetero atom itself or a monovalent hydrocarbon group which may be substituted by a hetero atom(s), and the hetero atom(s) may be interposed into the cyclic structure of the cyclic hydrocarbon group and the monovalent hydrocarbon group; and M+ represents a monovalent cation. There can be provided a chemically amplified negative resist composition which can improve resolution at the time of forming a pattern and give a pattern with less line edge roughness (LER).
摘要翻译： 本发明提供化学放大型负性抗蚀剂组合物，其包含由以下通式（0-1）表示的鎓盐，通过酸和酸产生剂的作用而变成碱不溶性的树脂，其中Rf表示氟原子或 三氟甲基; Y表示碳原子数3〜30的环状烃基，环状烃基中的氢原子可以被杂原子本身取代，也可以被可以被杂原子取代的一价烃基取代，杂原子 可以插入到环状烃基和一价烃基的环状结构中; M +表示一价阳离子。 可以提供一种化学放大的负型抗蚀剂组合物，其可以在形成图案时提高分辨率并且产生具有较少线边缘粗糙度（LER）的图案。
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公开(公告)号：US20200301275A1
公开(公告)日：2020-09-24
申请号：US16799129
申请日：2020-02-24
IPC分类号： G03F7/038 , G03F7/004 , C08F212/14 , C08F220/28
摘要： A chemically-amplified negative resist composition includes: (A) an acid generator containing an onium salt (s) shown by the following formula(e) (A-1) and/or (A-2); and (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2). Thus, the present invention provides: a chemically-amplified negative resist composition which provides a pattern with high sensitivity, low LWR and CDU, and favorable profile; and a resist patterning process using the composition.
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