公开(公告)号：US06376401B1

公开(公告)日：2002-04-23

申请号：US09387773

申请日：1999-09-01

申请人： Shinichi Kondo ,  Takayuki Nakamura ,  Kazuhiko Fukuda ,  Naoyoshi Kamisugi ,  Nobu Kuzuu ,  Yoshinao Ihara ,  Hidetoshi Wakamatsu

发明人： Shinichi Kondo ,  Takayuki Nakamura ,  Kazuhiko Fukuda ,  Naoyoshi Kamisugi ,  Nobu Kuzuu ,  Yoshinao Ihara ,  Hidetoshi Wakamatsu

IPC分类号： C03B2000

CPC分类号： C03C3/06 ,  C03B19/1453 ,  C03B2201/02 ,  C03B2201/03 ,  C03B2201/04 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/23 ,  C03C2201/11 ,  C03C2201/23 ,  C03C2203/44

摘要： A synthetic silica glass having a high transmittance for vacuum ultraviolet rays, for example F2 excimer laser beam with a wavelength of 157 nm, a high uniformity and a high durability and useful for ultraviolet ray-transparent optical glass materials is produced from a high-purity silicon compound, for example silicon tetrachloride, by heat treating an accumulated porous silica material at a temperature not high enough to convert the porous silica material to a transparent silica glass in an inert gas atmosphere for a time sufficient to cause the OH groups to be condensed and removed from the glass, and exhibits substantially no content of impurities other than OH group a difference between highest and lowest fictional temperatures of 50° C. or less and a transmittance of 157 nm ultraviolet rays through a 10 mm optical path of 60% or more, and optically a OH group content of 1 to 70 ppm, a Cl content less than 1 ppm, a total content of impurity metals of 50 ppb or less, a content of each individual impurity metal less than 10 ppb, and an ultraviolet ray-transmittance at 172 to 200 nm of 40% or more even after the glass is exposed to an irradiation of ultraviolet rays at 160 to 300 nm for one hour.

摘要翻译： 对于真空紫外线具有高透射率的合成二氧化硅玻璃，例如波长为157nm的F2准分子激光束，高均匀性和高耐久性并且可用于紫外线透明光学玻璃材料由高纯度 硅化合物，例如四氯化硅，通过在不足够高的温度下热处理积聚的多孔二氧化硅材料，以在惰性气体气氛中将多孔二氧化硅材料转化为透明的石英玻璃足以使OH基团冷凝的时间 并且从玻璃中除去，并且基本上不含OH基团中的杂质含量，最高和最低虚构温度之间的差别为50℃或更低，通过10mm光路的157nm紫外线的透射率为60％或 更多地，光学地含有1至70ppm的OH基含量，小于1ppm的Cl含量，50ppb以下的杂质金属的总含量， 即使玻璃暴露于160〜300nm的紫外线照射1小时，每一种杂质金属小于10ppb，而在172〜200nm的紫外线透射率为40％以上。

公开(公告)号：US5659066A

公开(公告)日：1997-08-19

申请号：US618602

申请日：1996-03-20

申请人： Tsugio Murakami ,  Hidetaka Egashira ,  Kengo Okajima ,  Hidetoshi Wakamatsu

发明人： Tsugio Murakami ,  Hidetaka Egashira ,  Kengo Okajima ,  Hidetoshi Wakamatsu

IPC分类号： C07K5/072 ,  C07K5/075 ,  C07K5/06

CPC分类号： C07K5/0613

摘要： Described herein is a method for crystallizing aspartame (APM) by cooling an aqueous solution containing APM without forced convection during part of the crystallization, wherein a clear aqueous APM solution is initially cooled under forced convection and forced convection is interrupted, after crystallization has started but before the concentration of the APM crystals formed in the system reaches 0.5% by weight, until the amount of crystals reaches at least 10%, but not more than 50%, of the target amount, and wherein cooling is interrupted for at least part of the time of said interruption of forced convection at about the same time or shortly thereafter.

摘要翻译： 本文描述的是通过在部分结晶期间冷却含有APM的水溶液而不强制对流来使阿斯巴甜（APM）结晶的方法，其中在强制对流下首先冷却透明水性APM溶液，并且在结晶开始后强制对流被中断， 在系统中形成的APM晶体的浓度达到0.5重量％之前，直到晶体的量达到目标量的至少10％但不超过50％，并且其中冷却至少部分 大约在同一时间或之后不久中断强制对流的时间。

公开(公告)号：US4839306A

公开(公告)日：1989-06-13

申请号：US174453

申请日：1988-03-23

申请人： Hidetoshi Wakamatsu

发明人： Hidetoshi Wakamatsu

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/822 ,  H01L27/04

CPC分类号： H01L21/76232 ,  H01L21/763 ,  Y10S148/05 ,  Y10S148/158 ,  Y10S438/978

摘要： A method of manufacturing a trench filled with an insulation material in a semiconductor substrate which includes the steps of forming a trench in the substrate, subjecting the substrate to an RF bias sputtering to form an oxide layer on the substrate, form a slope at an upper corner of the trench and produce a roundness at a lower corner of the trench, and filling the trench with the insulation material.

摘要翻译： 一种制造在半导体衬底中填充有绝缘材料的沟槽的方法，包括以下步骤：在衬底中形成沟槽，对衬底进行RF偏压溅射以在衬底上形成氧化物层，在上部形成斜面 沟槽的角部，并在沟槽的下角产生圆度，并用绝缘材料填充沟槽。

公开(公告)号：US4835301A

公开(公告)日：1989-05-30

申请号：US83802

申请日：1987-08-11

申请人： Hidetoshi Wakamatsu ,  Shigeaki Irino ,  Tsuneo Harada ,  Akira Tokuda ,  Kiyotaka Oyama

发明人： Hidetoshi Wakamatsu ,  Shigeaki Irino ,  Tsuneo Harada ,  Akira Tokuda ,  Kiyotaka Oyama

IPC分类号： A23L27/30 ,  C07K1/14 ,  C07K5/072 ,  C07K5/075

CPC分类号： C07K5/0613

摘要： A process for producing stable .alpha.-L-aspartyl-L-phenylalanine methyl ester, which comprises heat-treating crystals of .alpha.-L-aspartyl-L-phenylalanine methyl ester having a water content of from 5 to 15% by weight based on wet crystals, at a temperature of higher than 50.degree. C. and lower than 80.degree. for at least 30 minutes.

摘要翻译： 一种制备稳定的α-L-天冬氨酰基-L-苯丙氨酸甲酯的方法，其包括将基于湿的5〜15重量％的含水量的α-L-天冬氨酰基-L-苯丙氨酸甲酯的晶体进行热处理 晶体，温度高于50℃，低于80℃至少30分钟。

公开(公告)号：US4810818A

公开(公告)日：1989-03-07

申请号：US78707

申请日：1987-07-28

申请人： Hidetoshi Wakamatsu ,  Shigeaki Irino ,  Tsuneo Harada ,  Akira Tokuda ,  Kiyotaka Oyama

发明人： Hidetoshi Wakamatsu ,  Shigeaki Irino ,  Tsuneo Harada ,  Akira Tokuda ,  Kiyotaka Oyama

IPC分类号： A23L27/30 ,  C07K1/00 ,  C07K5/072 ,  C07K5/075 ,  C07C101/02

CPC分类号： C07K5/0613

摘要： A process for producing dry .alpha.-L-aspartyl-L-phenylalanine methyl ester having an improved solubility from wet crystals of .alpha.-L-aspartyl-L-phenylalanine methyl ester having a water content of at least 20% by weight, which comprises drying the wet crystals at a temperature of higher than 50.degree. C. to obtain moist crystals having a water content of less than 20 and more than 15% by weight, then drying the moist crystals at a temperature of not higher than 50.degree. C. to obtain semi-dry crystals having a water content of less than 5% by weight, and further drying the semi-dry crystals at a temperature of higher than 50.degree. C. to obtain dry crystals of .alpha.-L-aspartyl-L-phenylalanine methyl ester.

摘要翻译： 一种具有水含量为至少20重量％的α-L-天冬氨酰基-L-苯丙氨酸甲酯的湿结晶具有改善的溶解度的干燥α-L-天冬氨酰基-L-苯丙氨酸甲酯的方法，其包括干燥 在高于50℃的温度下的湿结晶，得到含水量小于20且大于15重量％的湿润结晶，然后在不高于50℃的温度下干燥湿结晶至 得到水分小于5重量％的半干燥晶体，并在高于50℃的温度下进一步干燥半干燥晶体，得到α-L-天冬氨酰基-L-苯丙氨酸甲酯的干结晶 酯。

公开(公告)号：US20130252125A1

公开(公告)日：2013-09-26

申请号：US13990327

申请日：2012-04-26

申请人： Keisuke Shiosaki ,  Hiroshi Tatsui ,  Junji Morita ,  Akinori Yukimasa ,  Hidetoshi Wakamatsu ,  Atsutaka Inoue

发明人： Keisuke Shiosaki ,  Hiroshi Tatsui ,  Junji Morita ,  Akinori Yukimasa ,  Hidetoshi Wakamatsu ,  Atsutaka Inoue

IPC分类号： H01M8/04

CPC分类号： H01M8/04225 ,  F23L17/005 ,  H01M8/04022 ,  H01M8/04223 ,  H01M8/04228 ,  H01M8/04302 ,  H01M8/04303 ,  H01M8/04761 ,  H01M8/04776 ,  H01M2250/10 ,  Y02B90/14 ,  Y02E60/50

摘要： A power generation system of the present invention comprises a fuel cell system (101), a gas supply device, a controller (102), a combustion device (103), an exhaust passage (70), a gas passage used to supply a gas supplied from the gas supply device to the exhaust passage (70), and a back-flow preventing device (20) placed in the gas passage or the exhaust passage (70), and the controller (102) executes an operation for relieving a state in which a valve element remains incapable of moving away from a valve seat in the back-flow preventing device (20) in such a manner that the gas supply device is operated so that a differential pressure between an upstream side and a downstream side of the back-flow preventing device (20) becomes a value equal to or greater than the predetermined time which can relieve the state in which valve element remains incapable of moving away from the valve seat, during a shut-down state or at start-up of the fuel cell system (101).

摘要翻译： 本发明的发电系统包括燃料电池系统（101），气体供应装置，控制器（102），燃烧装置（103），排气通道（70），用于供应气体的气体通道 从所述气体供给装置供给到所述排气通路（70），以及设置在所述气体通路或排气通路（70）中的回流防止装置（20），所述控制器（102）执行用于缓和状态 其中阀元件保持不能远离背流防止装置（20）中的阀座移动，使得气体供应装置被操作，使得气体供应装置的上游侧和下游侧之间的压差 逆流防止装置（20）成为等于或大于预定时间的值，其可以减轻阀元件在关闭状态期间或启动期间保持不能离开阀座的状态 燃料电池系统（101）。

公开(公告)号：US07521324B2

公开(公告)日：2009-04-21

申请号：US10551843

申请日：2004-03-31

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hidetoshi Wakamatsu ,  Yasuo Kobayashi

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hidetoshi Wakamatsu ,  Yasuo Kobayashi

IPC分类号： H01L21/336

CPC分类号： H01L21/318 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518

摘要： In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiO2 from being formed.

摘要翻译： 为了通过将高K绝缘膜的相对介电常数保持在高状态来提供具有良好质量的半导体器件，或者提供一种半导体器件的制造方法，其中高K绝缘膜的相对介电常数可以 保持在高状态，公开了在硅衬底和栅极电极层之间包括硅衬底，栅极电极层和栅极绝缘膜的半导体器件。 栅极绝缘膜是通过对金属和硅的混合物进行氮化处理而形成的高相对介电常数（高k）膜。 高K膜本身成为氮化物，以防止形成SiO 2。

公开(公告)号：US20050206018A1

公开(公告)日：2005-09-22

申请号：US11129710

申请日：2005-05-13

申请人： Tadahiro Ohmi ,  Takashi Imaoka ,  Hisayuki Shimada ,  Nobuhiro Konishi ,  Mizuho Morita ,  Takeo Yamashita ,  Tadashi Shibata ,  Hidetoshi Wakamatsu ,  Jinzo Watanabe ,  Shintaro Aoyama ,  Masakazu Nakamura

发明人： Tadahiro Ohmi ,  Takashi Imaoka ,  Hisayuki Shimada ,  Nobuhiro Konishi ,  Mizuho Morita ,  Takeo Yamashita ,  Tadashi Shibata ,  Hidetoshi Wakamatsu ,  Jinzo Watanabe ,  Shintaro Aoyama ,  Masakazu Nakamura

IPC分类号： B01J19/08 ,  C23C8/10 ,  C23C8/36 ,  C23C14/02 ,  C23C14/48 ,  C23C16/02 ,  C23C16/44 ,  C30B23/02 ,  C30B25/02 ,  G01N23/00 ,  H01L21/66

CPC分类号： C30B23/02 ,  C23C8/10 ,  C23C8/36 ,  C23C14/022 ,  C23C14/48 ,  C23C16/02 ,  C23C16/4401 ,  C30B25/02 ,  C30B29/16 ,  Y10S438/903

摘要： Vacuum processing equipment capable of preventing particles from sticking to objects to be processed in vacuum vessels. The vacuum equipment comprises a series of vacuum vessels separated by doors, and the pressure in the vessels are reducible respectively. The vessels are so configured that objects to be processed are moveable among them and there is provided light projection means for projecting ultra rays on gases introduced to at least of the vessels.

摘要翻译： 真空处理设备能够防止颗粒粘附在真空容器中被处理物体。 真空设备包括一系列由门隔开的真空容器，容器中的压力分别可减少。 容器被配置成使待处理的物体在它们之间是可移动的，并且设置有用于将超光线投射到至少导入到容器中的气体的光投射装置。

公开(公告)号：US5948265A

公开(公告)日：1999-09-07

申请号：US888239

申请日：1997-07-03

申请人： Hidetoshi Wakamatsu ,  Manabu Sakurai ,  Tsugio Murakami ,  Sadakatsu Kumoi

发明人： Hidetoshi Wakamatsu ,  Manabu Sakurai ,  Tsugio Murakami ,  Sadakatsu Kumoi

IPC分类号： B01J39/10 ,  B01J41/10 ,  B01J41/18 ,  C02F1/42

CPC分类号： B01J39/10 ,  B01J41/10

摘要： An ion-exchanger is provided which comprises zirconium hydroxide supported on active carbon. The process for producing the ion-exchanger, and a process for removing a multiply charged anion are also provided which employ the ion-exchanger. The ion-exchanger of the present invention has high chemical resistance, high heat resistance, high mechanical strength, and excellent ion exchange characteristics.

摘要翻译： 提供了一种离子交换器，其包含负载在活性炭上的氢氧化锆。 还提供了使用离子交换器的离子交换器的制造方法和除去多电荷阴离子的方法。 本发明的离子交换器具有高耐化学性，高耐热性，高机械强度和优异的离子交换特性。

公开(公告)号：US5347035A

公开(公告)日：1994-09-13

申请号：US125193

申请日：1993-09-23

申请人： Hidetoshi Wakamatsu ,  Tsuneo Harada ,  Yukio Kunisawa ,  Kiyotaka Oyama

发明人： Hidetoshi Wakamatsu ,  Tsuneo Harada ,  Yukio Kunisawa ,  Kiyotaka Oyama

IPC分类号： A23L27/30 ,  C07K1/14 ,  C07K5/06 ,  C07K5/072 ,  C07K5/075 ,  C07C229/00

CPC分类号： C07K5/0613

摘要： A method for crystallizing .alpha.-L-aspartyl-L-phenylalanine methyl ester from a hot aqueous solution containing .alpha.-L-aspartyl-L-phenylalanine methyl ester by cooling is disclosed, which comprises (i) continuously supplying a hot aqueous solution of .alpha.-L-aspartyl-L-phenylalanine methyl ester having a concentration such that the content of L-aspartyl-L-aspartyl-L-phenylalanine methyl esters is less than 0.6% by weight based on the weight of .alpha.-L-aspartyl-L-phenylalanine methyl ester in said solution, or if the content of L-aspartyl-L-aspartyl-L-phenylalanine methyl esters is 0.6% by weight or more based on the weight of .alpha.-L-aspartyl-L-phenylalanine methyl ester in said solution, to a crystallization vessel the temperature of which is lowered to that corresponding to the solubility of .alpha.-L-aspartyl-L-phenylalanine methyl ester or less, and (ii) continuously discharging the formed slurry from the crystallization vessel.

摘要翻译： 公开了一种通过冷却从含有α-L-天冬氨酰-L-苯丙氨酸甲酯的热水溶液中结晶α-L-天冬氨酰基-L-苯丙氨酸甲酯的方法，其包括（i）连续供应热的α水溶液 L-天冬氨酰-L-苯丙氨酸甲酯的浓度使得L-天冬氨酰基-L-天冬氨酰基-L-苯丙氨酸甲酯的含量基于α-L-天冬氨酰-L重量的小于0.6重量％ - 苯丙氨酸甲酯，或者如果L-天冬氨酰基-L-天冬氨酰基-L-苯丙氨酸甲酯的含量基于α-L-天冬氨酰基-L-苯丙氨酸甲酯的重量计为0.6重量％以上 所述溶液加到结晶容器中，该结晶容器的温度降低至与α-L-天冬氨酰基-L-苯丙氨酸甲酯的溶解度或更低的溶解度，和（ii）从结晶容器中连续排出形成的浆料。