公开(公告)号：US08455346B2

公开(公告)日：2013-06-04

申请号：US13075658

申请日：2011-03-30

申请人： Yasuhiro Nojiri ,  Hiroyuki Fukumizu ,  Shinichi Nakao ,  Kei Watanabe ,  Kazuhiko Yamamoto ,  Ichiro Mizushima ,  Yoshio Ozawa

发明人： Yasuhiro Nojiri ,  Hiroyuki Fukumizu ,  Shinichi Nakao ,  Kei Watanabe ,  Kazuhiko Yamamoto ,  Ichiro Mizushima ,  Yoshio Ozawa

IPC分类号： H01L21/4763 ,  G11C11/00

CPC分类号： H01L51/0591 ,  B82Y10/00 ,  B82Y40/00 ,  G11C13/0002 ,  G11C13/025 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/149 ,  H01L45/1608

摘要： According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The method can include forming a first electrode film on the first interconnect. The method can include forming a layer including a plurality of carbon nanotubes dispersed inside an insulator on the first electrode film. At least one carbon nanotube of the plurality of carbon nanotubes is exposed from a surface of the insulator. The method can include forming a second electrode film on the layer. In addition, the method can include forming a second interconnect on the second electrode film.

摘要翻译： 根据一个实施例，公开了一种用于制造非易失性存储器件的方法。 非易失性存储器件包括连接到第一互连和第二互连的存储单元。 该方法可以包括在第一互连上形成第一电极膜。 该方法可以包括在第一电极膜上形成分散在绝缘体内的多个碳纳米管的层。 多个碳纳米管中的至少一个碳纳米管从绝缘体的表面露出。 该方法可以包括在该层上形成第二电极膜。 此外，该方法可以包括在第二电极膜上形成第二互连。

公开(公告)号：US07471478B2

公开(公告)日：2008-12-30

申请号：US11355460

申请日：2006-02-16

申请人： Shinichi Nakao

发明人： Shinichi Nakao

IPC分类号： G11B5/86

CPC分类号： G11B5/865 ,  G11B5/82 ,  G11B5/855

摘要： A magnetic disk can be magnetized simply and in a short time. A magnetic disk producing method produces a magnetic disk having a central hole, an outer radius, a plurality of annular recording tracks formed in a direction from the central hole toward the outer radius, each recording track including a plurality of sectors, and a recess formed between adjacent recording tracks to a predetermined depth. The method includes providing a magnetizing master disk magnetized in a predetermined pattern of alternating N and S polarities extending in a direction from a center of the master disk toward an outer radius thereof; and superposing the master disk on the magnetic disk to magnetically transcribe a magnetic signal to the recording tracks based on the predetermined pattern.

摘要翻译： 磁盘可以简单地在短时间内被磁化。 磁盘制造方法产生具有中心孔，外半径，从中心孔朝向外半径的方向形成的多个环形记录磁道的磁盘，每个记录磁道包括多个扇区，形成凹部 在相邻记录轨道之间延伸到预定深度。 该方法包括提供磁化母磁盘，其以从母盘的中心朝向其外半径的方向延伸的交替的N和S极性的预定图案被磁化; 并且将主盘叠加在磁盘上以基于预定图案将磁信号磁记录到记录轨道。

公开(公告)号：US07065023B2

公开(公告)日：2006-06-20

申请号：US10240001

申请日：2002-02-08

申请人： Tomiji Tanaka ,  Shinichi Nakao ,  Sohmei Endoh ,  Tamotsu Ishii

发明人： Tomiji Tanaka ,  Shinichi Nakao ,  Sohmei Endoh ,  Tamotsu Ishii

IPC分类号： G11B7/00

CPC分类号： G11B11/10563 ,  G11B7/08505 ,  G11B7/0903 ,  G11B7/0943 ,  G11B7/24079 ,  G11B11/10576

摘要： A device and a method for judging the radial moving direction of light spots formed on the signal recording surface of an optical disc having grooves of two types, which are different from each other in terms of depth and which are arranged along a recording track that is a land of the optical disc. The judging section of the device judges the moving direction of the main spot on the basis of binarized data of a difference signal of the main spot and binarized data of a difference signal of one of spots on the side. With this arrangement, the moving direction of the light spots relative to a radial direction of the optical disc can be determined only by using difference signals without using any sum signal.

摘要翻译： 一种用于判断形成在光盘的信号记录表面上的光斑的径向移动方向的装置和方法，该光盘具有在深度方面彼此不同的两种凹槽，并且沿着记录轨迹布置 光盘的一片土地。 设备的判断部分基于主点的差分信号的二值化数据和侧面中的一个点的差分信号的二值化数据来判断主点的移动方向。 通过这种布置，光斑相对于光盘的径向方向的移动方向只能通过使用差信号而不使用任何和信号来确定。

公开(公告)号：US20050207301A1

公开(公告)日：2005-09-22

申请号：US11134319

申请日：2005-05-23

申请人： Shinichi Nakao ,  Yoshiro Arikawa

发明人： Shinichi Nakao ,  Yoshiro Arikawa

IPC分类号： G11B7/005 ,  G11B7/007 ,  G11B7/13 ,  G11B11/105 ,  G11B19/12 ,  G11B7/00

CPC分类号： G11B11/10597 ,  G11B7/0053 ,  G11B7/007 ,  G11B7/131 ,  G11B11/10578 ,  G11B11/10584 ,  G11B19/12 ,  G11B19/125

摘要： A tracking error signal calculating unit (221) detects a tracking error signal of light with respect to a mark recorded on a wobbled groove in a focused-on state from the light reflected back from the wobbled groove. A pull-in signal calculating unit (225) detects a total light volume signal PI of the mark, recorded on the wobbled groove, from the reflected light. A D-flipflop discriminating circuit (244) compares the phase of a binary coded version of a tracking error signal TE detected by the tracking error signal calculating unit to the phase of a binary coded version of the total light volume signal PI as detected by the pull-in signal calculating unit to discriminate the sorts of the optical discs having the same outer shape and the same optical system but differing in the UTOC recording system.

摘要翻译： 跟踪误差信号计算单元（221）根据从摆动槽反射的光检测聚焦状态下记录在摆动槽上的标记的光的跟踪误差信号。 拉入信号计算单元（225）从反射光检测记录在摆动凹槽上的标记的总光量信号PI。 D触发识别电路（244）将由跟踪误差信号计算单元检测到的跟踪误差信号TE的二进制编码版本的相位与由总线光量信号PI检测的二进制编码版本的相位进行比较 引入信号计算单元来区分具有相同外形和相同光学系统但在UTOC记录系统中不同的光盘的种类。

公开(公告)号：US20050160440A1

公开(公告)日：2005-07-21

申请号：US10508406

申请日：2004-01-30

申请人： Mikinori Matsuda ,  Tokio Kanada ,  Kazuhito Kurita ,  Minoru Tobita ,  Akihiro Noda ,  Yoshiro Arikawa ,  Shinichi Nakao

发明人： Mikinori Matsuda ,  Tokio Kanada ,  Kazuhito Kurita ,  Minoru Tobita ,  Akihiro Noda ,  Yoshiro Arikawa ,  Shinichi Nakao

IPC分类号： G11B7/004 ,  G11B11/105 ,  G11B19/12 ,  G11B23/03 ,  G11B23/28 ,  G11B17/04

CPC分类号： G11B23/285 ,  G11B11/10578 ,  G11B11/10584 ,  G11B11/10597 ,  G11B19/12 ,  G11B23/0303

摘要： A recording medium enabling type determination and writing possibility determination for various types of disks. Opening and closing means for opening and closing a detection hole of a cartridge forms a plane substantially horizontal level with a reference plane of the cartridge at a position of the detection hole when the detection hole is in a closed state. The cartridge has at least a first detection hole and a second detection hole formed therein. The second detection hole (H1) is opened and closed by the opening and closing means, and the first detection hole (H0) is in an open state at all times. A disk drive apparatus or a disk determining method determines, together with a disk type, determining information contents (for example writing possibility) based on one or a plurality of detection holes formed in the cartridge, on the basis of an open/closed state of the detection hole and a result of the disk type using a signal based on reflected light from the loaded recording medium.

摘要翻译： 一种能够对各种类型的盘进行类型确定和写入可能性确定的记录介质。 当检测孔处于关闭状态时，用于打开和关闭盒的检测孔的打开和关闭装置在检测孔的位置处形成具有与盒的基准平面基本水平的平面。 该盒具有形成在其中的至少第一检测孔和第二检测孔。 第二检测孔（H 1）由打开和关闭装置打开和关闭，并且第一检测孔（H 0）始终处于打开状态。 磁盘驱动装置或磁盘确定方法基于盘的类型，基于打开/关闭状态确定基于形成在盒中的一个或多个检测孔的信息内容（例如书写可能性） 检测孔和使用基于来自加载的记录介质的反射光的信号的盘类型的结果。

公开(公告)号：US20130093090A1

公开(公告)日：2013-04-18

申请号：US13707359

申请日：2012-12-06

申请人： Yumi HAYASHI ,  Atsuko Sakata ,  Kei Watanabe ,  Noriaki Matsunaga ,  Shinichi Nakao ,  Makoto Wada ,  Hiroshi Toyoda

发明人： Yumi HAYASHI ,  Atsuko Sakata ,  Kei Watanabe ,  Noriaki Matsunaga ,  Shinichi Nakao ,  Makoto Wada ,  Hiroshi Toyoda

IPC分类号： H01L23/485

CPC分类号： H01L23/485 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.

摘要翻译： 一种制造半导体器件的方法，包括在衬底上形成电介质膜; 在电介质膜中形成开口; 形成含有其形成硅化物的能量低于开口内的硅化铜的能量的金属的第一膜; 在形成有含有金属的第一膜的开口中形成导电性并且含有铜（Cu）的第二膜; 以及在所述基板的温度低于300℃的气氛中，在所述第二膜上选择性地形成含有Cu和硅（Si）的复合膜。

公开(公告)号：US20120217464A1

公开(公告)日：2012-08-30

申请号：US13404678

申请日：2012-02-24

申请人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

发明人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

IPC分类号： H01L45/00

CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/149

摘要： A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.

摘要翻译： 通过层叠多个存储单元阵列形成非易失性存储装置，所述存储单元阵列包括多个字线，多个位线和存储单元。 存储单元包括电流整流装置和可变电阻装置，可变电阻装置包括下电极，上电极和包括形成在下电极和上电极之间的导电纳米材料的电阻变化层， 在层叠方向上彼此相邻设置的可变电阻装置在电阻变化层和作为阴极的下部电极之间具有钛氧化物（TiOx），另外在层叠方向上彼此相邻设置的可变电阻装置具有钛 电阻变化层和作为阴极的上部电极之间的氧化物（TiOx）。

公开(公告)号：US20110306199A1

公开(公告)日：2011-12-15

申请号：US13075658

申请日：2011-03-30

申请人： Yasuhiro NOJIRI ,  Hiroyuki Fukumizu ,  Shinichi Nakao ,  Kei Watanabe ,  Kazuhiko Yamamoto ,  Ichiro Mizushima ,  Yoshio Ozawa

发明人： Yasuhiro NOJIRI ,  Hiroyuki Fukumizu ,  Shinichi Nakao ,  Kei Watanabe ,  Kazuhiko Yamamoto ,  Ichiro Mizushima ,  Yoshio Ozawa

IPC分类号： H01L21/768 ,  B82Y99/00

CPC分类号： H01L51/0591 ,  B82Y10/00 ,  B82Y40/00 ,  G11C13/0002 ,  G11C13/025 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/149 ,  H01L45/1608

摘要： According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The method can include forming a first electrode film on the first interconnect. The method can include forming a layer including a plurality of carbon nanotubes dispersed inside an insulator on the first electrode film. At least one carbon nanotube of the plurality of carbon nanotubes is exposed from a surface of the insulator. The method can include forming a second electrode film on the layer. In addition, the method can include forming a second interconnect on the second electrode film.

摘要翻译： 根据一个实施例，公开了一种用于制造非易失性存储器件的方法。 非易失性存储器件包括连接到第一互连和第二互连的存储单元。 该方法可以包括在第一互连上形成第一电极膜。 该方法可以包括在第一电极膜上形成分散在绝缘体内的多个碳纳米管的层。 多个碳纳米管中的至少一个碳纳米管从绝缘体的表面露出。 该方法可以包括在该层上形成第二电极膜。 此外，该方法可以包括在第二电极膜上形成第二互连。

公开(公告)号：US07344791B1

公开(公告)日：2008-03-18

申请号：US09936148

申请日：2000-03-07

申请人： Takeo Yamaguchi ,  Shinichi Nakao

发明人： Takeo Yamaguchi ,  Shinichi Nakao

IPC分类号： H01M8/10

CPC分类号： H01M8/1011 ,  C08J5/2275 ,  C08J2327/18 ,  C08J2351/00 ,  C08J2379/08 ,  H01M8/1004 ,  H01M8/1009 ,  H01M8/1023 ,  H01M8/1039 ,  H01M8/106 ,  H01M8/1072 ,  H01M8/1088 ,  H01M2300/0088 ,  Y02E60/523 ,  Y02P70/56

摘要： A conventional direct methanol solid polymer fuel cell comprises a solid polymer electrolyte as an electrolyte. This type of cell involves some problems; methanol permeates the membrane; the electromotive force lowers because of direct oxidation; and the membrane melts at about 130° C. when the temperature is increased to enhance the catalyst activity. According to the invention, an electrolyte membrane made of a porous substrate (1) that does not swell substantially with methanol and water and has pores (2) filled with a polymer (3) having proton conductivity is produced and used to suppress the permeation of methanol as much as possible, providing an electrolyte membrane for fuel cells endurable in a high-temperature environment, a fuel cell comprising such a membrane, a method of manufacturing such a fuel cell, and a method of manufacturing an electrolyte membrane comprising irradiation a porous substrate having swell-resistance against organic solvent and water with energy and contacting the substrate with a monomer to cause polymerization.

摘要翻译： 常规的直接甲醇固体聚合物燃料电池包括作为电解质的固体聚合物电解质。 这种类型的电池涉及一些问题; 甲醇渗透膜; 电动势由于直接氧化而降低; 当温度升高时，膜在约130℃下熔融以提高催化剂活性。 根据本发明，制造由多孔基材（1）制成的电解质膜，其不会用甲醇和水基本上膨胀并且具有填充有质子传导性的聚合物（3）的孔（2），并用于抑制渗透 甲醇，提供在高温环境下耐用的燃料电池的电解质膜，包含这种膜的燃料电池，制造这种燃料电池的方法，以及制造电解质膜的方法，其包括将多孔 基材具有对有机溶剂的抗溶胀性和能量的水，并使基材与单体接触以引起聚合。

公开(公告)号：US08772153B2

公开(公告)日：2014-07-08

申请号：US13423081

申请日：2012-03-16

申请人： Takashi Furuhashi ,  Miyoko Shimada ,  Ichiro Mizushima ,  Shinichi Nakao

发明人： Takashi Furuhashi ,  Miyoko Shimada ,  Ichiro Mizushima ,  Shinichi Nakao

IPC分类号： H01L21/4763 ,  H01L21/31 ,  H01L23/52 ,  H01L21/76

CPC分类号： H01L21/7682 ,  H01L21/31053 ,  H01L21/76834 ,  H01L21/76885

摘要： In accordance with an embodiment, a semiconductor device includes a substrate, a line-and-space structure, a first film and a second film. The line-and-space structure includes line patterns arranged on the substrate parallel to one another at a predetermined distance. The first film is formed on side surfaces and bottom surfaces of the line patterns by an insulating film material. The second film is formed on the line-and-space structure across a space between the line patterns by a material showing low wettability to the first film. Space between the line patterns includes an air gap in which at least a bottom surface of the first film is totally exposed.

摘要翻译： 根据实施例，半导体器件包括衬底，线间距结构，第一膜和第二膜。 线间空间结构包括以预定距离彼此平行布置在基板上的线图案。 第一膜通过绝缘膜材料形成在线图案的侧表面和底表面上。 通过对第一膜显示低润湿性的材料，在线图形之间的空间结构上形成第二膜。 线图案之间的空间包括其中至少第一膜的底表面完全暴露的气隙。