Method of controlling fuser unit of image forming apparatus
    1.
    发明授权
    Method of controlling fuser unit of image forming apparatus 失效
    图像形成装置的定影单元的控制方法

    公开(公告)号:US4996567A

    公开(公告)日:1991-02-26

    申请号:US349312

    申请日:1989-05-09

    IPC分类号: G03G21/00 G03G15/00 G03G15/20

    CPC分类号: G03G15/2064 G03G15/2039

    摘要: A method of controlling a fuser unit of an image-forming apparatus such as a laser printer, in a warming-up stage, so that excess mechanical and electrostatic stresses are not imposed on the process elements. The method includes the steps of: starting the energization of a heater of a heat roller substantially at the same time as the commencement of an initialization process of mechanical and electrostatic conditions of the apparatus while rotating the heat roller and a backup roller together; stopping the rotation of the rollers after the initialization process has been completed; monitoring a surface temperature of the heat roller for a first predetermined period after the completion of the initialization; and if the surface temperature has reached a set value within the first predetermined period, determining that the fuser unit is ready for operation, and conversely, if the set value has not reached within the first predetermined period, carrying out an additional warming-up process of rotating the heat roller and the back-up roller again until the set value is reached, unless a second predetermined period has expired subsequent to the expiration of the first predetermined period.

    Image forming apparatus having an exchangeable unit exchange timing
indicating device
    2.
    发明授权
    Image forming apparatus having an exchangeable unit exchange timing indicating device 失效
    具有可交换单元交换指示装置的图像形成装置

    公开(公告)号:US5066978A

    公开(公告)日:1991-11-19

    申请号:US359012

    申请日:1989-05-31

    IPC分类号: G03G21/00 G03G15/00 G03G21/18

    摘要: The image forming device of this invention is related to a device such as a duplicator, a printer, a facsimile or the like in which a printing operation is carried out by utilizing an electrophotographic recording system and an electrostatic recording system, wherein the device includes a plurality of consumable working parts including at least a developing unit, a drum unit, a fixing unit, and a transfer unit, and the device further includes a unit for integrating the working time of each of the working parts, a memory for storing the integrated working time of each working part, a lifetime setting unit in which a predetermined lifetime of each working part is set, and a generator for generating an exchange requirement signal for at least one of the working parts when the integrated working time of the working part reaches the lifetime of the part set in the lifetime setting unit, whereby an image forming device having a system in which these consumable working parts can be exchanged at correct intervals, regardless of the conditions of use, is provided.

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20110024847A1

    公开(公告)日:2011-02-03

    申请号:US12901858

    申请日:2010-10-11

    IPC分类号: H01L27/092

    摘要: There is provided a technology which allows improvements in manufacturing yield and product reliability in a semiconductor device having a triple well structure. A shallow p-type well is formed in a region different from respective regions in a p-type substrate where a deep n-type well, a shallow p-type well, and a shallow n-type well are formed. A p-type diffusion tap formed in the shallow p-type well is wired to a p-type diffusion tap formed in a shallow n-type well in the deep n-type well using an interconnection in a second layer. The respective gate electrodes of an nMIS and a pMIS each formed in the deep n-type well are coupled to the respective drain electrodes of an nMIS and a pMIS each formed in the substrate using an interconnection in a second or higher order layer.

    摘要翻译: 提供了一种在具有三重阱结构的半导体器件中提高制造产量和产品可靠性的技术。 在形成深n型阱,浅P型阱和浅n型阱的p型衬底中,在与各个区域不同的区域中形成浅的p型阱。 形成在浅p型阱中的p型扩散抽头使用在第二层中的互连在深n型阱中连接到形成在浅n型阱中的p型扩散阱。 每个形成在深n型阱中的nMIS和pMIS的相应栅极电极使用在第二层或更高级层中的互连而在衬底中形成的nMIS和pMIS的相应漏电极耦合。