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    THIN FILM-LIKE POLYMER STRUCTURE AND METHOD FOR PREPARING THE SAME
    2.
    发明申请
    THIN FILM-LIKE POLYMER STRUCTURE AND METHOD FOR PREPARING THE SAME 有权
    薄膜状聚合物结构及其制备方法

    公开(公告)号：US20100062258A1

    公开(公告)日：2010-03-11

    申请号：US12312069

    申请日：2007-10-29

    申请人： Shinji Takeoka ,  Yosuke Okamura ,  Toshinori Fujie ,  Saori Utsunomiya ,  Takahiro Goto

    发明人： Shinji Takeoka ,  Yosuke Okamura ,  Toshinori Fujie ,  Saori Utsunomiya ,  Takahiro Goto

    IPC分类号： B32B27/00 ,  B32B37/02

    CPC分类号： B32B37/02 ,  A61K9/0014 ,  A61K9/70 ,  A61K9/7007 ,  B32B38/10 ,  C08J5/18 ,  C08J7/12 ,  C12N5/0068 ,  C12N2535/10 ,  Y10T156/10 ,  Y10T428/31504

    摘要： A thin film polymer structure having a functional substance on the face (A surface) and reverse face (B surface) of the film, obtained by the steps of (a) causing polyfunctional molecules to adsorb to an area of an arbitrary shape in an interface between a substrate body and a liquid phase; (b) polymerizing and/or crosslinking the adsorbing polyfunctional molecules to form a polymer thin film; (c) bonding a functional substance to the A surface of the formed thin film and then (d) forming a soluble support film thereon; exfoliating the thin film and the soluble support film from the substrate body; (e) bonding to the B surface of the thin film a functional substance identical to or different from the abovementioned functional substance and then dissolving the soluble support film with a solvent. A method for preparing a thin film molecular structure having a functional substance on the face (A surface) and reverse face (B surface) of the film is offered through the above process.

    摘要翻译： 一种薄膜聚合物结构，其具有通过以下步骤得到的膜的表面（A表面）和反面（B面）上的功能性物质：（a）使多官能分子吸附在界面中任意形状的区域 在基体和液相之间; （b）使吸附的多官能分子聚合和/或交联以形成聚合物薄膜; （c）将功能性物质结合到所形成的薄膜的A表面上，然后（d）在其上形成可溶性载体膜; 将薄膜和可溶性支撑膜从基体体层剥离; （e）将与所述功能物质相同或不同的功能性物质与所述薄膜的B面接合，然后用溶剂溶解所述可溶性载体膜。 通过上述方法提供了在膜的表面（A表面）和反面（B面）上制备具有功能性物质的薄膜分子结构的方法。

    Drug carrier
    5.
    发明授权
    Drug carrier 失效
    药物载体

    公开(公告)号：US08647613B2

    公开(公告)日：2014-02-11

    申请号：US11886319

    申请日：2006-03-10

    申请人： Shinji Takeoka ,  Yosuke Okamura ,  Hideo Kanazawa ,  Shuji Hisamoto ,  Kohei Kubota ,  Yosuke Obata

    发明人： Shinji Takeoka ,  Yosuke Okamura ,  Hideo Kanazawa ,  Shuji Hisamoto ,  Kohei Kubota ,  Yosuke Obata

    IPC分类号： A61K31/787

    CPC分类号： A61K9/1272 ,  A61K47/6911

    摘要： The present invention has an object of providing a drug carrier capable of controlling in vivo pharmacokinetics. The present invention is directed to a drug carrier comprising a molecular assembly having a drug incorporated therein, and the above object can be achieved by a part of the amphiphilic molecules included in the molecular assembly being released from the molecular assembly by an external environmental change. The present invention utilizes a phenomenon that the hydrophilic-hydrophobic balance of the amphiphilic molecules is shifted toward hydrophilicity by an external environmental change and thus the amphiphilic molecules are freed from the molecular assembly.

    摘要翻译： 本发明的目的是提供能够控制体内药代动力学的药物载体。 本发明涉及包含其中并入药物的分子组合物的药物载体，并且上述目的可以通过外部环境变化从分子组合中包含的一部分包含在分子组合中的两亲分子来实现。 本发明利用两亲性分子的亲水疏水性平衡通过外部环境变化向亲水性转移的现象，从而使两亲分子脱离分子组装。

    Thin-Filmy Polymeric Structure and Method of Preparing the Same
    6.
    发明申请
    Thin-Filmy Polymeric Structure and Method of Preparing the Same 审中-公开
    薄膜聚合物结构及其制备方法

    公开(公告)号：US20120034466A1

    公开(公告)日：2012-02-09

    申请号：US11658908

    申请日：2005-08-31

    申请人： Shinji Takeoka ,  Yosuke Okamura ,  Masanori Ohtsuka

    发明人： Shinji Takeoka ,  Yosuke Okamura ,  Masanori Ohtsuka

    IPC分类号： B32B9/00 ,  B05D3/02

    CPC分类号： C08J5/18 ,  B82Y30/00 ,  Y10T428/31504

    摘要： A thin film polymer structure obtained by the steps of:(a) causing polyfunctional molecules to adsorb to an area of an arbitrary shape in an interface between a substrate body and a liquid phase; (b) polymerizing and/or crosslinking the adsorbing polyfunctional molecules to form a polymer thin film; and (c) exfoliating the formed thin film from the substrate body.

    摘要翻译： 通过以下步骤获得的薄膜聚合物结构：（a）使多官能分子吸附在基体和液相之间的界面中的任意形状的区域; （b）使吸附的多官能分子聚合和/或交联以形成聚合物薄膜; 和（c）将所形成的薄膜从基底体剥离。

    Drug Carrier
    7.
    发明申请
    Drug Carrier 失效
    药品承运人

    公开(公告)号：US20090136443A1

    公开(公告)日：2009-05-28

    申请号：US11886319

    申请日：2006-03-10

    申请人： Shinji Takeoka ,  Yosuke Okamura ,  Hideo Kanazawa ,  Shuji Hisamoto ,  Kohei Kubota ,  Yosuke Obata

    发明人： Shinji Takeoka ,  Yosuke Okamura ,  Hideo Kanazawa ,  Shuji Hisamoto ,  Kohei Kubota ,  Yosuke Obata

    IPC分类号： A61K31/787 ,  A61K31/785 ,  C08G63/91

    CPC分类号： A61K9/1272 ,  A61K47/6911

    摘要： The present invention has an object of providing a drug carrier capable of controlling in vivo pharmacokinetics. The present invention is directed to a drug carrier comprising a molecular assembly having a drug incorporated therein, and the above object can be achieved by a part of the amphiphilic molecules included in the molecular assembly being released from the molecular assembly by an external environmental change. The present invention utilizes a phenomenon that the hydrophilic-hydrophobic balance of the amphiphilic molecules is shifted toward hydrophilicity by an external environmental change and thus the amphiphilic molecules are freed from the molecular assembly.

    摘要翻译： 本发明的目的是提供能够控制体内药代动力学的药物载体。 本发明涉及包含其中并入药物的分子组合物的药物载体，并且上述目的可以通过外部环境变化从分子组合中包含的一部分包含在分子组合中的两亲分子来实现。 本发明利用两亲性分子的亲水疏水性平衡通过外部环境变化向亲水性转移的现象，从而使两亲分子脱离分子组装。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08587076B2

    公开(公告)日：2013-11-19

    申请号：US13547913

    申请日：2012-07-12

    申请人： Junji Hirase ,  Akio Sebe ,  Naoki Kotani ,  Gen Okazaki ,  Kazuhiko Aida ,  Shinji Takeoka

    发明人： Junji Hirase ,  Akio Sebe ,  Naoki Kotani ,  Gen Okazaki ,  Kazuhiko Aida ,  Shinji Takeoka

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L27/108 ,  H01L31/119 ,  H01L31/062

    CPC分类号： H01L29/4983 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.

    摘要翻译： 半导体器件包括：形成在衬底的有源区上的高介电常数栅极绝缘膜; 形成在高介电常数栅极绝缘膜上的栅电极; 以及形成在栅电极的每个侧表面上的绝缘侧壁。 高介电常数栅极绝缘膜连续地形成为从栅极下方延伸到绝缘侧壁下方。 位于绝缘侧壁下方的高介电常数栅极绝缘膜的至少一部分的厚度比位于栅电极下方的高介电常数栅极绝缘膜的厚度的厚度小。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08253180B2

    公开(公告)日：2012-08-28

    申请号：US13037831

    申请日：2011-03-01

    申请人： Junji Hirase ,  Akio Sebe ,  Naoki Kotani ,  Gen Okazaki ,  Kazuhiko Aida ,  Shinji Takeoka

    发明人： Junji Hirase ,  Akio Sebe ,  Naoki Kotani ,  Gen Okazaki ,  Kazuhiko Aida ,  Shinji Takeoka

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/4983 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.

    摘要翻译： 半导体器件包括：形成在衬底的有源区上的高介电常数栅极绝缘膜; 形成在高介电常数栅极绝缘膜上的栅电极; 以及形成在栅电极的每个侧表面上的绝缘侧壁。 高介电常数栅极绝缘膜连续地形成为从栅极下方延伸到绝缘侧壁下方。 位于绝缘侧壁下方的高介电常数栅极绝缘膜的至少一部分的厚度比位于栅电极下方的高介电常数栅极绝缘膜的厚度的厚度小。