公开(公告)号：US06320154B1

公开(公告)日：2001-11-20

申请号：US09101504

申请日：1999-04-27

申请人： Takashi Akahori ,  Risa Nakase ,  Shinsuke Oka

发明人： Takashi Akahori ,  Risa Nakase ,  Shinsuke Oka

IPC分类号： B23K1000

CPC分类号： H01J37/32192 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/511 ,  C23C16/52 ,  H01J2237/022

摘要： An objective of this invention is to provide a plasma processing method that is capable of reducing particle contamination during plasma processing performed upon a semiconductor wafer. If the use of electron cyclotron resonance to generate a plasma and form a thin film of SiOF or the like is used by way of example, a sheath zone of a few mm thick is formed between the wafer and the plasma, and particles are trapped within a boundary zone between the sheath zone and the plasma. At this point, a microwave power is not dropped suddenly to zero after the film-formation processing, but is reduced to a lower level of, for example, 1 kW and is held for 10 seconds. This reduces the plasma density and thickens the sheath zone, so that particles are held away from the wafer surface. When the microwave power is subsequently cut, the particles move freely around, but only a small proportion thereof adhere to the wafer.

摘要翻译： 本发明的目的是提供一种等离子体处理方法，其能够减少在半导体晶片上进行的等离子体处理期间的颗粒污染。 如果使用电子回旋加速器共振来产生等离子体并形成SiOF薄膜等，则在晶片和等离子体之间形成有几毫米厚的鞘层，并且颗粒被捕获在 鞘区和等离子体之间的边界区。 此时，微波功率在成膜处理后不会突然下降到零，而是降低到例如1kW的较低水平并保持10秒。 这降低了等离子体密度并增加了皮肤区域，使得颗粒被保持远离晶片表面。 当微波功率随后被切割时，颗粒自由地移动，但只有一小部分粘附在晶片上。

公开(公告)号：US07833826B2

公开(公告)日：2010-11-16

申请号：US12323655

申请日：2008-11-26

申请人： Shinsuke Oka

发明人： Shinsuke Oka

IPC分类号： H01L21/00

CPC分类号： H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696 ,  H01L31/03685 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： After a gate oxide film 10 has been formed on a silicon substrate G, a first step of forming a microcrystalline silicon film by high electron density plasma of an electron temperature of 2.0 eV or less and a second step of forming an ultra-microcrystalline silicon film by high electron density plasma of an electron temperature higher than 2.0 eV are repeated. A stacked-layer film 20 of the ultra-microcrystalline silicon film and the microcrystalline silicon film is thereby formed. With the film formation method described above, at least one of an n-channel thin-film transistor and a p-channel thin-film transistor with the stacked-layer film 20 functioned as an active layer may be manufactured.

摘要翻译： 在硅基板G上形成了栅极氧化膜10之后，通过电子温度为2.0eV以下的高电子密度等离子体形成微晶硅膜的第一工序和形成超微晶硅膜的第二工序 通过高电子密度重复电子温度高于2.0eV的等离子体。 由此形成超微晶硅膜和微晶硅膜的叠层膜20。 利用上述成膜方法，可以制造作为活性层的层叠膜20的n沟道薄膜晶体管和p沟道型薄膜晶体管中的至少一种。

公开(公告)号：US20090152243A1

公开(公告)日：2009-06-18

申请号：US12088440

申请日：2006-09-27

申请人： Takahiro Horiguchi ,  Shinsuke Oka ,  Masaki Hirayama

发明人： Takahiro Horiguchi ,  Shinsuke Oka ,  Masaki Hirayama

IPC分类号： C23F1/00 ,  C23C16/513 ,  C23F1/08 ,  C23C16/511

CPC分类号： H05H1/46 ,  H01J37/32192

摘要： [Problem] To provide a plasma processing apparatus and a method thereof, which is capable of generating plasma evenly on the lower surface of a dielectric.[Means for Solving] A plasma processing apparatus 1, in which microwave is propagated into a dielectric 32 provided on an upper surface of a processing chamber 4 via plural slots 70 formed on a lower surface of a waveguide 35 and a processing gas supplied in the processing chamber 4 is made into plasma using electric field energy of an electromagnetic field formed on the surface of the dielectric to perform plasma processing on a substrate G. The plasma processing apparatus 1, concave portions 80a to 80g having different depth are formed on a lower surface of dielectric 32. Further, the depths of the respective concave portions 80a to 80g are made different to control a plasma generation on the lower surface of the dielectric 32.

摘要翻译： 本发明提供能够在电介质的下表面上均匀地产生等离子体的等离子体处理装置及其方法。 [解决方案]等离子体处理装置1，其中微波通过形成在波导35的下表面上的多个槽70和提供在波导35的下表面上的处理气体传播到设置在处理室4的上表面上的电介质32中 使用形成在电介质的表面上的电磁场的电场能将处理室4制成等离子体，以在基板G上进行等离子体处理。等离子体处理装置1，具有不同深度的凹部80a至80g形成在下部 另外，各凹部80a〜80g的深度不同，能够控制电介质32的下表面的等离子体产生。

公开(公告)号：US07432468B2

公开(公告)日：2008-10-07

申请号：US11694102

申请日：2007-03-30

申请人： Shinsuke Oka ,  Takahiro Horiguchi ,  Kazuaki Nishimura ,  Masayuki Kitamura ,  Tadahiro Ohmi ,  Masaki Hirayama

发明人： Shinsuke Oka ,  Takahiro Horiguchi ,  Kazuaki Nishimura ,  Masayuki Kitamura ,  Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： B23K10/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32238

摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.

摘要翻译： 微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。 投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体 作为在各个电介质部31下产生的等离子体的介质部分扩散。

公开(公告)号：US20070235425A1

公开(公告)日：2007-10-11

申请号：US11694102

申请日：2007-03-30

申请人： Shinsuke Oka ,  Takahiro Horiguchi ,  Kazuaki Nishimura ,  Masayuki Kitamura ,  Tadahiro Ohmi ,  Masaki Hirayama

发明人： Shinsuke Oka ,  Takahiro Horiguchi ,  Kazuaki Nishimura ,  Masayuki Kitamura ,  Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： B23K9/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32238

摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.

摘要翻译： 微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。 投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体 作为在各个电介质部31下产生的等离子体的介质部分扩散。