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    Optical integrated device and optical module
    1.
    发明申请
    Optical integrated device and optical module 有权
    光集成器件和光模块

    公开(公告)号：US20070216996A1

    公开(公告)日：2007-09-20

    申请号：US11471586

    申请日：2006-06-21

    申请人： Shinsuke Tanaka ,  Ken Morito ,  Haruhiko Kuwatsuka

    发明人： Shinsuke Tanaka ,  Ken Morito ,  Haruhiko Kuwatsuka

    IPC分类号： H01S3/00

    CPC分类号： H01S5/026 ,  G02B2006/12147 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/4025 ,  H01S5/50 ,  H01S5/5027

    摘要： An optical integrated device includes a plurality of input optical waveguides connected respectively to a plurality of input ports provided on one end face of the optical integrated device, a single output optical waveguide connected to an output port, an optical coupler for optically coupling signal lights propagated along the plural input optical waveguides to the single output optical waveguide, and a semiconductor optical amplifier gate array formed from a plurality of semiconductor optical amplifiers provided on the input optical waveguides, respectively, and each having an electrode on the surface thereof. The optical integrated device further includes a plurality of signal lines formed on the surface of the optical integrated device in such a manner as to extend from the electrodes to an end face of the optical integrated device on which none of the input ports and the output port is provided.

    摘要翻译： 光学集成装置包括多个输入光波导，分别连接到设置在光学集成装置的一个端面上的多个输入端口，连接到输出端口的单个输出光波导，用于将传播的信号光光学耦合的光耦合器 沿着多个输入光波导到单输出光波导，以及半导体光放大器门阵列，分别由设置在输入光波导上的多个半导体光放大器形成，并且每个具有在其表面上的电极。 光学集成器件还包括多个信号线，其形成在光学集成器件的表面上，从电极延伸到光学集成器件的端面，其中没有输入端口和输出端口 被提供。

    Optical integrated device and optical module
    2.
    发明授权
    Optical integrated device and optical module 有权

    公开(公告)号：US07295366B2

    公开(公告)日：2007-11-13

    申请号：US11471586

    申请日：2006-06-21

    申请人： Shinsuke Tanaka ,  Ken Morito ,  Haruhiko Kuwatsuka

    发明人： Shinsuke Tanaka ,  Ken Morito ,  Haruhiko Kuwatsuka

    IPC分类号： H01S3/00

    CPC分类号： H01S5/026 ,  G02B2006/12147 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/4025 ,  H01S5/50 ,  H01S5/5027

    摘要： An optical integrated device includes a plurality of input optical waveguides connected respectively to a plurality of input ports provided on one end face of the optical integrated device, a single output optical waveguide connected to an output port, an optical coupler for optically coupling signal lights propagated along the plural input optical waveguides to the single output optical waveguide, and a semiconductor optical amplifier gate array formed from a plurality of semiconductor optical amplifiers provided on the input optical waveguides, respectively, and each having an electrode on the surface thereof. The optical integrated device further includes a plurality of signal lines formed on the surface of the optical integrated device in such a manner as to extend from the electrodes to an end face of the optical integrated device on which none of the input ports and the output port is provided.

    Semiconductor optical amplifier
    4.
    发明授权
    Semiconductor optical amplifier 有权
    半导体光放大器

    公开(公告)号：US07859746B2

    公开(公告)日：2010-12-28

    申请号：US12191418

    申请日：2008-08-14

    申请人： Ken Morito ,  Susumu Yamazaki ,  Shinsuke Tanaka

    发明人： Ken Morito ,  Susumu Yamazaki ,  Shinsuke Tanaka

    IPC分类号： H01S5/343

    CPC分类号： H01S5/1082 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/32366 ,  H01S5/50 ,  H01S5/5009 ,  H01S2301/02

    摘要： A polarization-independent SOA is provided which uses an InP substrate (11) as a semiconductor substrate and uses GaInNAs having introduced tensile strain as an active layer (14). With this configuration, the polarization independence is achieved by introducing the tensile strain, and high saturation optical output power is realized by reducing the film thickness of the active layer (14) as well as the gain peak wavelength is increased by reducing the band gap of the active layer (14) through use of GaInNAs made by adding nitrogen (N) to GaInAs as a material of the active layer (14) so as to achieve high gain especially in C-band and L-band even when band filling exits at the time of injecting a high current into the active layer (14).

    摘要翻译： 提供了使用InP衬底（11）作为半导体衬底并且使用具有引入的拉伸应变的GaInNA作为有源层（14）的偏振无关的SOA。 通过这种结构，通过引入拉伸应变来实现极化独立性，并且通过降低有源层（14）的膜厚度来实现高饱和光输出功率，并且通过降低有源层（14）的带隙来增加增益峰值波长 通过使用通过将氮（N）添加到GaInAs作为有源层（14）的材料而制成的GaInNA，以便即使在带填充离开时也实现高增益，特别是在C带和L带中，有源层（14） 将高电流注入有源层（14）的时间。

    Wavelength tunable laser device
    5.
    发明授权
    Wavelength tunable laser device 有权
    波长可调激光器件

    公开(公告)号：US07508849B2

    公开(公告)日：2009-03-24

    申请号：US11020241

    申请日：2004-12-27

    申请人： Shinsuke Tanaka ,  Ken Morito

    发明人： Shinsuke Tanaka ,  Ken Morito

    IPC分类号： H01S3/10 ,  H01S3/13 ,  H01S3/00 ,  H01S3/04

    CPC分类号： H01S5/141 ,  G02B5/284 ,  H01S3/1068 ,  H01S5/0612 ,  H01S5/0687 ,  H01S5/1071 ,  H01S5/142

    摘要： A semiconductor optical amplifier, an acousto-optic tunable filter, a phase shifter, a lens, and an internal etalon are arranged in a resonator. Outside the resonator, two lenses, two beam splitters, two photo-detectors, and an external etalon are arranged. The internal etalon is a quartz etalon and the external etalon is a crystal etalon. Therefore, the rate of change in transmission peak wavelength of the internal etalon to a temperature change is greater than that of the external etalon.

    摘要翻译： 谐振器中布置有半导体光放大器，声光可调滤波器，移相器，透镜和内标准器。 在谐振器外部，布置了两个透镜，两个分束器，两个光电检测器和外部标准具。 内部标准具是石英标准具，外部标准具是一种水晶标准具。 因此，内部标准具的透射峰值波长与温度变化的变化率大于外部标准具的变化率。

    Semiconductor integrated optical element
    6.
    发明申请
    Semiconductor integrated optical element 审中-公开
    半导体集成光学元件

    公开(公告)号：US20080199128A1

    公开(公告)日：2008-08-21

    申请号：US12071007

    申请日：2008-02-14

    申请人： Shinsuke Tanaka ,  Ken Morito

    发明人： Shinsuke Tanaka ,  Ken Morito

    IPC分类号： G02B6/12

    CPC分类号： G02B6/125 ,  G02B6/2821

    摘要： Aiming at realizing a semiconductor integrated optical element comprising a single semiconductor substrate, and first and second optical waveguides differed in the equivalent refractive index from each other on the semiconductor substrate, allowing light signal to propagate from the first optical waveguide to the second optical waveguide, in which the first and second optical waveguides are provided side-by-side on the semiconductor substrate to form a directional coupler allowing optical coupling between the first and second optical waveguides, and a first-guiding-mode optical signal in the first optical waveguide is output after being converted into a second-guiding-mode optical signal in second optical waveguide, which makes possible to suppress generation of reflection loss and emission loss in optical coupling, and obtain extremely desirable optical coupling characteristics, without causing reflection of optical signal, between different types of optical waveguides differed from each other in the equivalent refractive index.

    摘要翻译： 为了实现包括单个半导体衬底和第一和第二光波导的半导体集成光学元件在半导体衬底上的等效折射率彼此不同，允许光信号从第一光波导传播到第二光波导， 其中所述第一和第二光波导在所述半导体衬底上并排设置以形成允许所述第一和第二光波导之间的光耦合的定向耦合器，并且所述第一光波导中的第一引导模式光信号是 在第二光波导中被转换为第二引导模式光信号之后，输出可以抑制光耦合中的反射损耗和发射损耗的产生，并且获得非常期望的光耦合特性，而不引起光信号的反射 不同类型的光波导与e不同 ach其他在等效折射率。

    Optical amplification control apparatus
    7.
    发明授权
    Optical amplification control apparatus 有权
    光放大控制装置

    公开(公告)号：US08736956B2

    公开(公告)日：2014-05-27

    申请号：US13048345

    申请日：2011-03-15

    申请人： Shinsuke Tanaka ,  Ken Morito

    发明人： Shinsuke Tanaka ,  Ken Morito

    IPC分类号： H01S5/024 ,  H01S3/10

    CPC分类号： H01S5/0612 ,  H01S5/0261 ,  H01S5/0617 ,  H01S5/0683 ,  H01S5/50

    摘要： An optical amplification control apparatus is formed from a semiconductor optical amplifier, a temperature adjustment unit adjusting the temperature of the semiconductor optical amplifier, and an optical gain control unit adjusting the temperature of the semiconductor optical amplifier by controlling the temperature adjustment unit, and varying an optical gain of the semiconductor optical amplifier. Thus, a pattern effect is suppressed even if the output light intensity (the intensity of amplified light) is increased.

    摘要翻译： 光放大控制装置由半导体光放大器，调节半导体光放大器的温度的温度调节单元和通过控制温度调节单元来调节半导体光放大器的温度的光增益控制单元形成， 半导体光放大器的光增益。 因此，即使输出光强度（放大光的强度）增加，图案效果也被抑制。

    Optical amplifying device
    10.
    发明授权
    Optical amplifying device 有权
    光放大装置

    公开(公告)号：US06992813B1

    公开(公告)日：2006-01-31

    申请号：US11117432

    申请日：2005-04-29

    申请人： Shinsuke Tanaka ,  Ken Morito

    发明人： Shinsuke Tanaka ,  Ken Morito

    IPC分类号： H01S3/00

    CPC分类号： H01S5/50 ,  H01S5/0608

    摘要： In order to realize continuous gain control while realizing polarization independent amplifying characteristic, an optical amplifying device is configured to include: a Mach-Zehnder interferometer including an input side coupler, an output side coupler and a pair of arms, that connects the input side coupler to the output side coupler; a first and a second optical amplifier, to amplify signal light, which are disposed on the pair of arms respectively; and a light source for control light to output control light, in which the first and the second optical amplifier are configured to have polarization independent characteristic and the light source for control light is configured to have a predetermined polarization dependent gain difference or a predetermined polarization dependent loss difference.

    摘要翻译： 为了在实现偏振无关放大特性的同时实现连续增益控制，光放大装置被配置为包括：马赫 - 曾德干涉仪，其包括输入侧耦合器，输出侧耦合器和一对臂，其连接输入侧耦合器 到输出侧耦合器; 第一和第二光放大器，分别放置在所述一对臂上的信号光; 以及用于控制光输出控制光的光源，其中第一和第二光放大器被配置为具有偏振独立特性，并且用于控制光的光源被配置为具有预定的偏振相关增益差或预定的偏振相关 损失差异