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    Semiconductor waveguide structure of a II-VI group compound
    2.
    发明授权
    Semiconductor waveguide structure of a II-VI group compound 失效
    II-VI族化合物的半导体波导结构

    公开(公告)号：US5416884A

    公开(公告)日：1995-05-16

    申请号：US245556

    申请日：1994-05-18

    申请人： Shinya Hirata ,  Masahiko Kitagawa ,  Yoshitaka Tomomura

    发明人： Shinya Hirata ,  Masahiko Kitagawa ,  Yoshitaka Tomomura

    IPC分类号： G02B6/10 ,  G02B6/13 ,  H01S5/327

    CPC分类号： G02B6/10 ,  G02B6/131 ,  H01S5/327

    摘要： A semiconductor waveguide structure of the II-VI group compound semiconductor made of the II group element and the VI group element. The waveguide structure includes a waveguide layer and clad layers which puts the waveguide layer therebetween. The waveguide layer has a refractive index larger than a refractive index of each clad layer. At least one of the clad layers contains the element Cd. With such an arrangement, the refractive index of one clad layer is established to be different from that of the other clad layer. In such a case, it is preferable that the semiconductor waveguide structure comprises at least two waveguide layers which are adjacent to each other and that the structure has either one of the features as follows: each refractive index of the waveguide layers varies stepwise at each boundary surface of the layers; the refractive index of at least one of the waveguide layers varies so as to be inclined; and super lattice layers are formed between the clad layer and the waveguide layers. Further, in the arrangement, more than two waveguide layers and clad layers may be formed in such a manner that each of the waveguide layer is put between the clad layers.

    摘要翻译： 由II族元素和VI族元素构成的II-VI族化合物半导体的半导体波导结构。 波导结构包括波导层和将波导层置于其间的包覆层。 波导层的折射率大于每个包覆层的折射率。 包层中的至少一个包含元素Cd。 通过这样的布置，确定了一个包覆层的折射率与另一个覆盖层的折射率不同。 在这种情况下，优选半导体波导结构包括彼此相邻的至少两个波导层，并且该结构具有以下特征之一：波导层的每个折射率在每个边界处逐步变化 层的表面; 至少一个波导层的折射率变化以倾斜; 并且在覆盖层和波导层之间形成超晶格层。 此外，在该布置中，可以以使每个波导层放置在包层之间的方式形成多于两个的波导层和包层。

    Semiconductor device
    5.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：US20060163720A1

    公开(公告)日：2006-07-27

    申请号：US11327326

    申请日：2006-01-09

    申请人： Shinya Hirata

    发明人： Shinya Hirata

    IPC分类号： H01L23/12

    CPC分类号： H01L23/585 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device is provided with a sealing ring 106 made of a metal which surrounds an integrated circuit part 102 and which is formed on a substrate 104 along an outer perimeter of the rectangular device. At least one corner part 108 of the sealing ring is formed to have a larger width than other parts of the sealing ring 106, so as to increase the rigidity and the strength of the corner part of the sealing ring 106. Thus, the strength of the corner part of the sealing ring is improved. Also, even if the corner part of the sealing ring is lost, the penetration of moisture into the integrated circuit side is inhibited.

    摘要翻译： 半导体器件设置有由金属制成的密封环106，该密封环围绕集成电路部分102，并且沿着矩形器件的外周形成在基板104上。 密封环的至少一个角部108形成为具有比密封环106的其它部分更大的宽度，以增加密封环106的角部的刚性和强度。 因此，密封环的角部的强度提高。 此外，即使密封圈的角部损失，也能够防止水分渗透到集成电路侧。