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    Functional optical devices and methods for producing them
    2.
    发明申请
    Functional optical devices and methods for producing them 失效
    功能性光学器件及其制造方法

    公开(公告)号：US20050169580A1

    公开(公告)日：2005-08-04

    申请号：US10516058

    申请日：2002-05-29

    申请人： Shiro Takahashi ,  Hisanori Suzuki ,  Junjie Si ,  Myint Aye ,  Liping Zuo ,  Hsin Kong ,  Atsushi Watabe

    发明人： Shiro Takahashi ,  Hisanori Suzuki ,  Junjie Si ,  Myint Aye ,  Liping Zuo ,  Hsin Kong ,  Atsushi Watabe

    IPC分类号： G02B6/12 ,  G02B6/13 ,  G02B6/34 ,  G02B6/10 ,  G02B6/26

    CPC分类号： G02B6/12011 ,  G02B6/12007 ,  G02B6/12026 ,  G02B6/13 ,  G02B6/29355

    摘要： A functional optical device has cores which are trenches, different portions of the cores being formed from different core materials. The optical device can be formed by forming trenches 5,7,9 within a substrate (normally a substrate 1 covered by a cladding layer 3), covering at least part of at least one trench 7 with a cover 11, depositing a first cladding material to fill the trenches 5,9 which are not covered, removing the cover 11, depositing a second cladding layer 15 of a second cladding material to fill the trenches 7 which were previously covered, removing core material outside the trenches 5,7,9 and applying a cladding layer to cover the trenches.

    摘要翻译： 功能光学器件具有作为沟槽的芯，芯的不同部分由不同的芯材料形成。 光学器件可以通过在衬底（通常由覆盖层3覆盖的衬底1）内形成沟槽5,7,9形成，用覆盖物11覆盖至少一个沟槽7的至少一部分，沉积第一覆层材料 填充未被覆盖的沟槽5,9，去除盖11，沉积第二覆层材料的第二覆层15以填充预先覆盖的沟槽7，去除沟槽5,7,9外的芯材料，以及 施加包层以覆盖沟槽。

    FUNCTIONAL OPTICAL DEVICES AND METHODS FOR PRODUCING THEM
    3.
    发明申请
    FUNCTIONAL OPTICAL DEVICES AND METHODS FOR PRODUCING THEM 审中-公开
    功能光学器件及其生产方法

    公开(公告)号：US20070086719A1

    公开(公告)日：2007-04-19

    申请号：US11562766

    申请日：2006-11-22

    申请人： Shiro Takahashi ,  Hisanori Suzuki ,  Junjie Si ,  Myint Aye ,  Liping Zuo ,  Kenneth Kong ,  Atsushi Watabe

    发明人： Shiro Takahashi ,  Hisanori Suzuki ,  Junjie Si ,  Myint Aye ,  Liping Zuo ,  Kenneth Kong ,  Atsushi Watabe

    IPC分类号： G02B6/10

    CPC分类号： G02B6/12011 ,  G02B6/12007 ,  G02B6/12026 ,  G02B6/13 ,  G02B6/29355

    摘要： A functional optical device has cores which are trenches, different portions of the cores being formed from different core materials. The optical device can be formed by forming trenches 5, 7, 9 within a substrate (normally a substrate 1 covered by a cladding layer 3), covering at least part of at least one trench 7 with a cover 11, depositing a first cladding layer 13 of a first cladding material to fill the trenches 5, 9 which are not covered, removing the cover 11, depositing a second cladding layer 15 of a second cladding material to fill the trenches 7 which were previously covered, removing core material outside the trenches 5, 7, 9, and applying a cladding layer to cover the trenches.

    摘要翻译： 功能光学器件具有作为沟槽的芯，芯的不同部分由不同的芯材料形成。 光学器件可以通过在衬底（通常由覆盖层3覆盖的衬底1）内形成沟槽5,7,9形成，用盖11覆盖至少一个沟槽7的至少一部分，沉积第一覆层 13的第一包层材料填充未被覆盖的沟槽5,9，移除盖11，沉积第二覆层材料的第二覆层15以填充先前被覆盖的沟槽7，在沟槽外部移除芯材料 5,7,9，并且施加包层以覆盖沟槽。

    Optical waveguide apparatus and method of producing the same
    4.
    发明授权
    Optical waveguide apparatus and method of producing the same 失效
    光波导装置及其制造方法

    公开(公告)号：US06795631B2

    公开(公告)日：2004-09-21

    申请号：US10157065

    申请日：2002-05-30

    申请人： Yoshihiko Noro ,  Shiro Takahashi ,  Hisanori Suzuki ,  Satoshi Kobayashi

    发明人： Yoshihiko Noro ,  Shiro Takahashi ,  Hisanori Suzuki ,  Satoshi Kobayashi

    IPC分类号： G02B610

    CPC分类号： G02B6/12011 ,  G02B6/1203 ,  G02B2006/12038 ,  G02B2006/121 ,  G02B2006/12135 ,  G02B2006/12178

    摘要： An optical waveguide apparatus comprises a substrate (1), a patterned waveguide as a core (4), and an upper cladding layer (10) formed on the substrate. The core is surrounded by a cladding comprising the substrate as a lower cladding layer and the upper cladding layer and smaller in refractive index than the core. The core and the cladding are integrally coupled to each other in a manner such that temperature-dependent expansion or contraction is performed substantially in accordance the characteristic of the cladding. The core and the cladding are made of materials selected so that the variation in optical path length according to the temperature-dependent expansion or contraction of the cladding is canceled by the variation in optical path length according to temperature-dependent variation in refractive index of the core.

    摘要翻译： 一种光波导装置，包括基板（1），作为芯（4）的图案化波导和形成在基板上的上包层（10）。 该芯被包层包围，该包层包括作为下包层的衬底和上包层，并且折射率小于芯。 芯和包层以这样的方式彼此一体地耦合，使得基本上根据包层的特性进行依赖于温度的膨胀或收缩。 芯和包层由选择的材料制成，使得根据温度依赖的包层的膨胀或收缩，光路长度的变化由于光程长度的变化而被消除，其中根据温度依赖的折射率的变化 核心。

    BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE
    6.
    发明申请
    BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE 有权
    后置照明固态图像拾取器件

    公开(公告)号：US20120038016A1

    公开(公告)日：2012-02-16

    申请号：US13258680

    申请日：2010-03-24

    申请人： Hisanori Suzuki ,  Yasuhito Yoneta ,  Yasuhito Miyazaki ,  Masaharu Muramatsu ,  Koei Yamamoto

    发明人： Hisanori Suzuki ,  Yasuhito Yoneta ,  Yasuhito Miyazaki ,  Masaharu Muramatsu ,  Koei Yamamoto

    IPC分类号： H01L31/0224

    CPC分类号： H01L27/1464 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14806 ,  H01L31/02363 ,  H01L31/035281

    摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.

    摘要翻译： 在背照式固体摄像装置中，包括具有背面侧的光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的电荷转移电极2相对于 光入射面，光检测面具有不平坦的表面。 通过具有不平坦表面的光检测表面，抑制由不平坦表面反射的光相对于入射光的相位具有散射的相位差并导致相互抵消的干涉光，因此抑制了金属化。 因此，可以通过背照式固态图像拾取装置获得高质量的图像。

    SOLID-STATE IMAGING DEVICE
    7.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号：US20110273603A1

    公开(公告)日：2011-11-10

    申请号：US13144741

    申请日：2010-01-22

    申请人： Hisanori Suzuki ,  Yasuhito Yoneta ,  Shin-ichiro Takagi ,  Kentaro Maeta ,  Masaharu Muramatsu

    发明人： Hisanori Suzuki ,  Yasuhito Yoneta ,  Shin-ichiro Takagi ,  Kentaro Maeta ,  Masaharu Muramatsu

    IPC分类号： H04N5/335

    CPC分类号： H04N5/37213 ,  H01L27/14609 ,  H01L27/14812

    摘要： A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, an output register unit 20 that receives the charge from the imaging area 10, and a multiplication register unit 28 that multiplies the charge from the output register 20, and performs feed-forward control of the multiplication factor of the multiplication register unit 28 according to the charge amount from the imaging area 10.

    摘要翻译： 根据本发明的一个实施例的固态成像装置1是电荷倍增固态成像装置，并且包括根据入射光量产生电荷的成像区域10，接收到的输出寄存器单元20 来自成像区域10的电荷以及乘法寄存器单元28，其将来自输出寄存器20的电荷相乘，并且根据来自成像区域10的电荷量执行乘法寄存器单元28的乘法因子的前馈控制 。

    SOLID-STATE IMAGING DEVICE
    8.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号：US20110031377A1

    公开(公告)日：2011-02-10

    申请号：US12920142

    申请日：2010-01-22

    申请人： Hisanori Suzuki ,  Yasuhito Yoneta ,  Shin-ichiro Takagi ,  Kentaro Maeta ,  Masaharu Muramatsu

    发明人： Hisanori Suzuki ,  Yasuhito Yoneta ,  Shin-ichiro Takagi ,  Kentaro Maeta ,  Masaharu Muramatsu

    IPC分类号： H01L27/146

    CPC分类号： H01L29/76816 ,  H01L27/14806 ,  H04N5/3653 ,  H04N5/37213 ,  H04N5/378

    摘要： A multi-port solid-state imaging device of one embodiment includes an imaging region and a plurality of units. The imaging region contains a plurality of pixel columns. The units are arrayed in a direction in which the pixel columns are arrayed, and generate signals based on charges from the imaging region. Each unit has an output register, a multiplication register, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns. The multiplication register receives the charge from the output register to generate a multiplied charge. The amplifier generates a signal based on the multiplied charge from the multiplication register. The solid-state imaging device contains a region where the units are provided, and a first dummy region and a second dummy region located on both sides in the above-mentioned direction of the region. In each of the first dummy region and the second dummy region, a multiplication register and an amplifier are provided.

    摘要翻译： 一个实施例的多端口固态成像装置包括成像区域和多个单元。 成像区域包含多个像素列。 这些单元沿像素列排列的方向排列，并且基于来自成像区域的电荷产生信号。 每个单元都有一个输出寄存器，一个乘法寄存器和一个放大器。 输出寄存器从一个或多个相应的像素列传输电荷。 乘法寄存器从输出寄存器接收电荷以产生乘法电荷。 放大器根据倍增寄存器的相乘电荷产生信号。 固态成像装置包括设置单元的区域，以及位于上述方向的两侧的第一虚拟区域和第二虚拟区域。 在第一虚拟区域和第二虚拟区域中的每一个中，设置有倍增寄存器和放大器。

    Semiconductor energy detector
    10.
    发明授权
    Semiconductor energy detector 有权
    半导体能量探测器

    公开(公告)号：US06724062B2

    公开(公告)日：2004-04-20

    申请号：US09886110

    申请日：2001-06-22

    申请人： Hiroshi Akahori ,  Hisanori Suzuki ,  Kazuhisa Miyaguchi ,  Masaharu Muramatsu ,  Koei Yamamoto

    发明人： Hiroshi Akahori ,  Hisanori Suzuki ,  Kazuhisa Miyaguchi ,  Masaharu Muramatsu ,  Koei Yamamoto

    IPC分类号： H01L3100

    CPC分类号： H01L27/14812

    摘要： A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the front side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped auxiliary wirings for performing auxiliary application/supplement and additional wirings for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.

    摘要翻译： 这里所公开的一种半导体能量检测器被布置成在CCD垂直移位寄存器的传输电极的正面上形成铝布线图形，该垂直移位寄存器的图形包括用于执行辅助应用/补充的曲折辅助布线和用于执行的附加布线 以与辅助布线无关的方式辅助补偿传输电压，其中相应的这些布线连接到相应的传输电极，从而避免在由多晶硅制成的那些传输电极处的引线电阻的问题，从而实现预期的电荷转移 高速高效率。