公开(公告)号：US20060232546A1

公开(公告)日：2006-10-19

申请号：US11426138

申请日：2006-06-23

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Yasuyuki ARAI ,  Hideomi SUZAWA ,  Koji ONO ,  Toru TAKAYAMA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Yasuyuki ARAI ,  Hideomi SUZAWA ,  Koji ONO ,  Toru TAKAYAMA

IPC分类号： G09G3/36

CPC分类号： G06K9/0004 ,  G07C9/00158 ,  H04M1/673 ,  H04M1/72519

摘要： It is an object to provide an user identity authentication system and an user identity authentication method with the Internet and a mobile information communication device. The mobile information communication device includes a liquid crystal device with a built-in image sensor. The image sensor reads individual information of a user, and user's identity is authenticated based on the individual information. A result of the authentication is unicast via the Internet. Alternatively, it is judged whether or not the result of the authentication is required to be unicast in accordance with a degree of requirement preset in the mobile information communication device or a destination terminal of communication, and the result is unicast via the Internet only when needed.

摘要翻译： 本发明的目的是提供一种用户身份认证系统和用户身份认证方法与因特网和移动信息通信设备。 移动信息通信装置包括具有内置图像传感器的液晶装置。 图像传感器读取用户的个人信息，并且基于个人信息认证用户的身份。 认证的结果是通过互联网进行单播。 或者，根据在移动信息通信装置或通信目的地终端中预先设定的要求，判断认证结果是否需要单播，并且结果仅在需要时通过因特网单播 。

公开(公告)号：US20120264245A1

公开(公告)日：2012-10-18

申请号：US13531149

申请日：2012-06-22

申请人： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Koji ONO ,  Yoshihiro KUSUYAMA

发明人： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Koji ONO ,  Yoshihiro KUSUYAMA

IPC分类号： H01L33/08

CPC分类号： H01L27/1296 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

摘要： For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.

摘要翻译： 为了形成栅电极，层叠具有低电阻的包含Al或以Al为主要成分的材料的导电膜和用于防止Al扩散到半导体层中的具有低接触电阻的导电膜，并且栅电极由 使用能够高速进行蚀刻处理的装置。

公开(公告)号：US20100283105A1

公开(公告)日：2010-11-11

申请号：US12840442

申请日：2010-07-21

申请人： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Motomu KURATA

发明人： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Motomu KURATA

IPC分类号： H01L29/786

CPC分类号： H01L29/41733 ,  H01L21/76804 ,  H01L21/76805 ,  H01L23/485 ,  H01L27/124 ,  H01L2924/0002 ,  H01L2924/00

摘要： A technique of manufacturing a semiconductor device in which etching in formation of a contact hole can be easily controlled is proposed. A semiconductor device includes at least a semiconductor layer formed over an insulating surface; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; and a conductive layer formed over the second insulating layer connected to the semiconductor layer via an opening which is formed at least in the semiconductor layer and the second insulating layer and partially exposes the insulating surface. The conductive layer is electrically connected to the semiconductor layer at the side surface of the opening which is formed in the semiconductor layer.

摘要翻译： 提出了可以容易地控制形成接触孔的蚀刻的半导体器件的制造技术。 半导体器件至少包括形成在绝缘表面上的半导体层; 形成在所述半导体层上的第一绝缘层; 形成在所述第一绝缘层上的栅电极; 形成在所述栅电极上的第二绝缘层; 以及形成在所述第二绝缘层之上的导电层，所述导电层经由至少在所述半导体层和所述第二绝缘层中形成并且部分地暴露所述绝缘表面的开口连接到所述半导体层。 导电层在形成于半导体层的开口的侧面与半导体层电连接。

公开(公告)号：US20100200855A1

公开(公告)日：2010-08-12

申请号：US12766172

申请日：2010-04-23

申请人： Hideomi SUZAWA ,  Yoshihiro KUSUYAMA ,  Shunpei YAMAZAKI

发明人： Hideomi SUZAWA ,  Yoshihiro KUSUYAMA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/04

CPC分类号： H01L29/78621 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1288 ,  H01L29/06 ,  H01L29/66765 ,  H01L29/78669

摘要： The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film 1001 into a taper shape. Thereby, a coverage problem of a pixel electrode 1003 can be solved and an inverse stagger type can be completed with three photomask.

摘要翻译： 本发明的目的是提供一种实现生产率和产量提高的有源矩阵液晶显示装置。 在本发明中，使用相同的蚀刻气体选择性地蚀刻包括含有金属材料的导电膜和含有一种导电类型的杂质元素的第二非晶半导体膜和非晶半导体膜的层叠膜，以形成第一 非晶半导体膜1001成锥形。 由此，可以解决像素电极1003的覆盖问题，并且可以用三个光掩模来完成反交错类型。

公开(公告)号：US20120043544A1

公开(公告)日：2012-02-23

申请号：US13288300

申请日：2011-11-03

申请人： Hideomi SUZAWA ,  Yoshihiro KUSUYAMA ,  Shunpei YAMAZAKI

发明人： Hideomi SUZAWA ,  Yoshihiro KUSUYAMA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786

CPC分类号： H01L29/78621 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1288 ,  H01L29/06 ,  H01L29/66765 ,  H01L29/78669

摘要： The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film 1001 into a taper shape. Thereby, a coverage problem of a pixel electrode 1003 can be solved and an inverse stagger type TFT can be completed with three photomask. Selected figure is FIG. 15.

摘要翻译： 本发明的目的是提供一种实现生产率和产量提高的有源矩阵液晶显示装置。 在本发明中，使用相同的蚀刻气体选择性地蚀刻包括含有金属材料的导电膜和含有一种导电类型的杂质元素的第二非晶半导体膜和非晶半导体膜的层叠膜，以形成第一 非晶半导体膜1001成锥形。 由此，可以解决像素电极1003的覆盖问题，并且可以用三个光掩模来完成反交错型TFT。 所选图是图1。 15。

公开(公告)号：US20110287580A1

公开(公告)日：2011-11-24

申请号：US13107054

申请日：2011-05-13

申请人： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA

发明人： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/66969

摘要： An object of an embodiment of the present invention is to provide a semiconductor device including a normally-off oxide semiconductor element whose characteristic variation is small in the long term. A cation containing one or more elements selected from oxygen and halogen is added to an oxide semiconductor layer, thereby suppressing elimination of oxygen, reducing hydrogen, or suppressing movement of hydrogen. Accordingly, carriers in the oxide semiconductor can be reduced and the number of the carriers can be kept constant in the long term. As a result, the semiconductor device including the normally-off oxide semiconductor element whose characteristic variation is small in the long term can be provided.

摘要翻译： 本发明的一个实施例的目的是提供一种包括其长期特性变化小的常关氧化物半导体元件的半导体器件。 将含有选自氧和卤素的一种或多种元素的阳离子加入到氧化物半导体层中，从而抑制氧的消除，还原氢或抑制氢的移动。 因此，可以减少氧化物半导体中的载流子，并且可以长期保持载流子的数量恒定。 结果，可以提供包括其长期特性变化小的常关氧化物半导体元件的半导体器件。

公开(公告)号：US20110193080A1

公开(公告)日：2011-08-11

申请号：US13014081

申请日：2011-01-26

申请人： Shunpei YAMAZAKI ,  Hiromichi GODO ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Mayumi MIKAMI

发明人： Shunpei YAMAZAKI ,  Hiromichi GODO ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Mayumi MIKAMI

IPC分类号： H01L29/78

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  Y10T428/24421

摘要： One object is to provide a semiconductor device that includes an oxide semiconductor and is reduced in size with favorable characteristics maintained. The semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode. The source electrode or the drain electrode includes a first conductive layer and a second conductive layer having a region extended in a channel length direction from an end face of the first conductive layer. The sidewall insulating layer has a length of a bottom surface in the channel length direction smaller than a length in the channel length direction of the extended region of the second conductive layer and is provided over the extended region.

摘要翻译： 一个目的是提供一种包括氧化物半导体的半导体器件，并且尺寸减小，并保持良好的特性。 半导体器件包括与氧化物半导体层接触的氧化物半导体层，源电极和漏电极，与氧化物半导体层重叠的栅电极; 以及在氧化物半导体层和栅电极之间的栅极绝缘层。 源电极或漏极包括第一导电层和具有从第一导电层的端面在沟道长度方向上延伸的区域的第二导电层。 侧壁绝缘层的沟道长度方向的底面的长度小于第二导电层的延伸区域的沟道长度方向的长度，并且设置在延伸区域上。

公开(公告)号：US20110254004A1

公开(公告)日：2011-10-20

申请号：US13168673

申请日：2011-06-24

申请人： Shunpei YAMAZAKI ,  Kazuko IKEDA ,  Shinya SASAGAWA ,  Hideomi SUZAWA

发明人： Shunpei YAMAZAKI ,  Kazuko IKEDA ,  Shinya SASAGAWA ,  Hideomi SUZAWA

IPC分类号： H01L29/04 ,  H01L29/786

CPC分类号： H01L29/4908 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/78609

摘要： A semiconductor device manufactured utilizing an SOI substrate, in which defects due to an end portion of an island-shaped silicon layer are prevented and the reliability is improved, and a manufacturing method thereof. The following are included: an SOI substrate in which an insulating layer and an island-shaped silicon layer are stacked in order over a support substrate; a gate insulating layer provided over one surface and a side surface of the island-shaped silicon layer; and a gate electrode which is provided over the island-shaped silicon layer with the gate insulating layer interposed therebetween. The gate insulating layer is formed such that the dielectric constant in the region which is in contact with the side surface of the island-shaped silicon layer is lower than that over the one surface of the island-shaped silicon layer.

摘要翻译： 利用SOI衬底制造的半导体器件及其制造方法，其中防止了由岛状硅层的端部引起的缺陷并提高了可靠性。 包括以下：SOI基板，其中绝缘层和岛状硅层依次层叠在支撑基板上; 设置在岛状硅层的一个表面和侧面上的栅极绝缘层; 以及栅极电极，其设置在岛状硅层上，栅极绝缘层插入其间。 栅极绝缘层形成为与岛状硅层的侧面接触的区域的介电常数低于岛状硅层的一个表面的介电常数。

公开(公告)号：US20110114959A1

公开(公告)日：2011-05-19

申请号：US13010089

申请日：2011-01-20

申请人： Hideomi SUZAWA ,  Yoshihiro KUSUYAMA ,  Shunpei YAMAZAKI

发明人： Hideomi SUZAWA ,  Yoshihiro KUSUYAMA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786

CPC分类号： H01L29/78621 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1288 ,  H01L29/06 ,  H01L29/66765 ,  H01L29/78669

摘要： The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film 1001 into a taper shape. Thereby, a coverage problem of a pixel electrode 1003 can be solved and an inverse stagger type TFT can be completed with three photomask. Selected figure is FIG. 15.

摘要翻译： 本发明的目的是提供一种实现生产率和产量提高的有源矩阵液晶显示装置。 在本发明中，使用相同的蚀刻气体选择性地蚀刻包括含有金属材料的导电膜和含有一种导电类型的杂质元素的第二非晶半导体膜和非晶半导体膜的层叠膜，以形成第一 非晶半导体膜1001成锥形。 由此，可以解决像素电极1003的覆盖问题，并且可以用三个光掩模来完成反交错型TFT。 所选图是图1。 15。

公开(公告)号：US20120187397A1

公开(公告)日：2012-07-26

申请号：US13356012

申请日：2012-01-23

申请人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Toshihiko SAITO ,  Takehisa HATANO ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

发明人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Toshihiko SAITO ,  Takehisa HATANO ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

IPC分类号： H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/02488 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869

摘要： A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.

摘要翻译： 提供了包括氧化物半导体并且具有良好的电特性的半导体器件。 在半导体器件中，在衬底上形成氧化物半导体膜和绝缘膜。 氧化物半导体膜的侧面与绝缘膜接触。 氧化物半导体膜包括沟道形成区域和包含掺杂剂的区域，沟道形成区域夹在其间。 栅极绝缘膜与氧化物半导体膜形成并接触。 在栅绝缘膜上形成具有侧壁绝缘膜的栅电极。 源电极和漏电极形成为与氧化物半导体膜和绝缘膜接触。