公开(公告)号：US20090233390A1

公开(公告)日：2009-09-17

申请号：US12408194

申请日：2009-03-20

申请人： Shunpei YAMAZAKI ,  Takeshi FUKUNAGA ,  Jun KOYAMA ,  Kazutaka INUKAI

发明人： Shunpei YAMAZAKI ,  Takeshi FUKUNAGA ,  Jun KOYAMA ,  Kazutaka INUKAI

IPC分类号： H01L21/336 ,  H01L21/28

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/3244

摘要： The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided.

摘要翻译： 根据本发明的发光器件的特征在于，形成包括多个导电膜的栅电极，并且利用蚀刻中的导电膜的选择性并使用它们来调节有源层中的杂质区域的浓度 作为面具。 本发明减少了相对于制造用于提高发光装置的产量的TFT并缩短其制造术语的光刻步骤的数量，通过该步骤，廉价地提供了发光装置和电子设备。

公开(公告)号：US20130037884A1

公开(公告)日：2013-02-14

申请号：US13549914

申请日：2012-07-16

申请人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Jun KOYAMA ,  Takeshi FUKUNAGA

发明人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Jun KOYAMA ,  Takeshi FUKUNAGA

IPC分类号： H01L29/786

CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/42324 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/7881

摘要： An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the drain region. Regions interposed between the pinning regions serve as channel forming regions. A tunnel oxide film, a floating gate, a control gate, etc. are formed on the above structure. The impurity regions prevent a depletion layer from expanding from the source region toward the drain region.

公开(公告)号：US20110263109A1

公开(公告)日：2011-10-27

申请号：US13177896

申请日：2011-07-07

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Yoshiharu HIRAKATA ,  Takeshi FUKUNAGA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Yoshiharu HIRAKATA ,  Takeshi FUKUNAGA

IPC分类号： H01L21/425

CPC分类号： H05B37/00 ,  G02F1/13452 ,  G02F1/13454 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2300/0408

摘要： In an electrooptical device including an electrooptical modulating layer between a first substrate 101 and a second substrate 105, all edges 107 to 109 of the first substrate 101 and the second substrate 105, except an edge where IC chips 110 and 111 are attached, are trued up each other between the first substrate 101 and the second substrate 105. By this, it is possible to make the area of the first substrate 101 minimum.

摘要翻译： 在包括第一基板101和第二基板105之间的电光调制层的电光装置中，除了安装有IC芯片110和111的边缘之外，第一基板101和第二基板105的所有边缘107至109被修整 在第一基板101和第二基板105之间彼此相对。由此，可以使第一基板101的面积最小化。

公开(公告)号：US20060145153A1

公开(公告)日：2006-07-06

申请号：US11275850

申请日：2006-01-31

申请人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Takeshi FUKUNAGA

发明人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Takeshi FUKUNAGA

IPC分类号： H01L31/0376

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1277 ,  H01L29/78696

摘要： A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal oxidation treatment to the active layer, the impurity element is subjected to redistribution, and the concentration of the impurity element in the principal surface of the active layer is minimized. The precise control of threshold voltage is enabled by the impurity element that is present in a trace quantity.

摘要翻译： 具有CMOS结构的半导体器件，其中在制造CMOS电路时，在形成栅极绝缘膜之前添加赋予P沟道型半导体器件的有源层p型导电性的杂质元素。 然后，通过对有源层进行热氧化处理，对杂质元素进行再分配，使有源层主表面的杂质元素的浓度最小化。 阈值电压的精确控制由痕量存在的杂质元素使能。

公开(公告)号：US20100200999A1

公开(公告)日：2010-08-12

申请号：US12764528

申请日：2010-04-21

申请人： Shunpei YAMAZAKI ,  Takeshi FUKUNAGA

发明人： Shunpei YAMAZAKI ,  Takeshi FUKUNAGA

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/5222 ,  H01J2217/49 ,  H01L23/5226 ,  H01L23/5329 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having reliable electrode contacts. First, an interlayer dielectric film is formed from a resinous material. Then, window holes are formed. The interlayer dielectric film is recessed by oxygen plasma. This gives rise to tapering window holes. This makes it easy to make contacts even if the circuit pattern is complex.

摘要翻译： 具有可靠电极接触的半导体器件。 首先，由树脂材料形成层间电介质膜。 然后，形成窗孔。 层间绝缘膜由氧等离子体凹陷。 这产生了锥形窗孔。 这使得即使电路图形复杂也可以容易地进行接触。

公开(公告)号：US20100159124A1

公开(公告)日：2010-06-24

申请号：US12686624

申请日：2010-01-13

申请人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA

发明人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA

IPC分类号： B05D5/06 ,  B05D5/12

CPC分类号： C23C14/564 ,  C23C14/04 ,  C23C14/12 ,  C23C14/243 ,  C23C14/54

摘要： A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.

摘要翻译： 提供了一种清除附着在不暴露于大气中的设备的气相沉积材料的方法。 将附着在设置在成膜室上的设备（成膜装置的部件）如基板保持器，蒸镀掩模，掩模保持器或防粘附屏蔽物的气相沉积材料进行热处理 。 因此，附着的气相沉积材料被重新升华，并通过真空泵被排气除去。 通过在制造电光装置的步骤中包括这种清洁方法，缩短了制造步骤，并且可以实现具有高可靠性的电光装置。

公开(公告)号：US20120201955A1

公开(公告)日：2012-08-09

申请号：US13449396

申请日：2012-04-18

申请人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA

发明人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA

IPC分类号： C23C16/458

CPC分类号： C23C14/564 ,  C23C14/04 ,  C23C14/12 ,  C23C14/243 ,  C23C14/54

摘要： A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.

摘要翻译： 提供了一种清除附着在不暴露于大气中的设备的气相沉积材料的方法。 将附着在设置在成膜室上的设备（成膜装置的部件）如基板保持器，蒸镀掩模，掩模保持器或防粘附屏蔽物的气相沉积材料进行热处理 。 因此，附着的气相沉积材料被重新升华，并通过真空泵通过排气除去。 通过在制造电光装置的步骤中包括这种清洁方法，缩短了制造步骤，并且可以实现具有高可靠性的电光装置。

公开(公告)号：US20090269871A1

公开(公告)日：2009-10-29

申请号：US12500862

申请日：2009-07-10

申请人： Shunpei YAMAZAKI ,  Kunitaka YAMAMOTO ,  Masaaki HIROKI ,  Takeshi FUKUNAGA

发明人： Shunpei YAMAZAKI ,  Kunitaka YAMAMOTO ,  Masaaki HIROKI ,  Takeshi FUKUNAGA

IPC分类号： H01L51/56

CPC分类号： H01L51/0003 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3258 ,  H01L51/0005 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5259 ,  H01L2251/5315 ,  H01L2251/566

摘要： To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue.

摘要翻译： 提供一种高通量的薄膜沉积装置，用于将由聚合物制成的有机EL材料精确地放置并且没有任何位置偏移。 一个像素部分被一个划分成多个像素行，并沿着像素行扫描薄膜沉积装置的头部，从而同时施加红色发光层涂布液，绿色发光层涂布液 ，蓝色发光层涂布液呈条状。 然后进行热处理，从而形成发光红色，绿色和蓝色的每种颜色的发光层。

公开(公告)号：US20100081247A1

公开(公告)日：2010-04-01

申请号：US12579642

申请日：2009-10-15

申请人： Hongyong ZHANG ,  Hideki UOCHI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA ,  Yasuhiko TAKEMURA

发明人： Hongyong ZHANG ,  Hideki UOCHI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA ,  Yasuhiko TAKEMURA

IPC分类号： H01L21/268

CPC分类号： H01L21/02672 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/1251 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757

摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film an a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

摘要翻译： 提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。 通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜 或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火， 。 通过选择性地形成覆盖膜来形成具有薄膜晶体管的动态电路，同时获得漏电流低的晶体管和迁移率高的晶体管，即将成为有源层的半导体层 晶体管，然后通过其热结晶。

公开(公告)号：US20080286940A1

公开(公告)日：2008-11-20

申请号：US12170663

申请日：2008-07-10

申请人： Takeshi FUKUNAGA

发明人： Takeshi FUKUNAGA

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/146 ,  H01L29/78621 ,  Y10S438/96

摘要： A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.

摘要翻译： 一种制造粘附的SOI衬底而不会引起单晶硅薄膜的破裂和剥离的方法。 该方法包括在单晶半导体衬底中选择性地形成多孔硅层，向单晶半导体衬底中加入氢以形成加氢层，将单晶半导体衬底粘附到支撑衬底上， 通过热退火在氢添加层的晶体半导体衬底，再次进行热退火以稳定粘合界面，并且选择性地除去多孔硅层，得到分成岛的单晶硅层。