公开(公告)号：US20100081247A1

公开(公告)日：2010-04-01

申请号：US12579642

申请日：2009-10-15

申请人： Hongyong ZHANG ,  Hideki UOCHI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA ,  Yasuhiko TAKEMURA

发明人： Hongyong ZHANG ,  Hideki UOCHI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA ,  Yasuhiko TAKEMURA

IPC分类号： H01L21/268

CPC分类号： H01L21/02672 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/1251 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757

摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film an a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

摘要翻译： 提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。 通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜 或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火， 。 通过选择性地形成覆盖膜来形成具有薄膜晶体管的动态电路，同时获得漏电流低的晶体管和迁移率高的晶体管，即将成为有源层的半导体层 晶体管，然后通过其热结晶。

公开(公告)号：US20120034766A1

公开(公告)日：2012-02-09

申请号：US13209861

申请日：2011-08-15

申请人： Hisashi OHTANI ,  Akiharu MIYANAGA ,  Takeshi FUKUNAGA ,  Hongyong ZHANG

发明人： Hisashi OHTANI ,  Akiharu MIYANAGA ,  Takeshi FUKUNAGA ,  Hongyong ZHANG

IPC分类号： H01L21/20

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

摘要翻译： 一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够加速非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶 电影。

公开(公告)号：US20100159124A1

公开(公告)日：2010-06-24

申请号：US12686624

申请日：2010-01-13

申请人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA

发明人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA

IPC分类号： B05D5/06 ,  B05D5/12

CPC分类号： C23C14/564 ,  C23C14/04 ,  C23C14/12 ,  C23C14/243 ,  C23C14/54

摘要： A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.

摘要翻译： 提供了一种清除附着在不暴露于大气中的设备的气相沉积材料的方法。 将附着在设置在成膜室上的设备（成膜装置的部件）如基板保持器，蒸镀掩模，掩模保持器或防粘附屏蔽物的气相沉积材料进行热处理 。 因此，附着的气相沉积材料被重新升华，并通过真空泵被排气除去。 通过在制造电光装置的步骤中包括这种清洁方法，缩短了制造步骤，并且可以实现具有高可靠性的电光装置。

公开(公告)号：US20120201955A1

公开(公告)日：2012-08-09

申请号：US13449396

申请日：2012-04-18

申请人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA

发明人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA

IPC分类号： C23C16/458

CPC分类号： C23C14/564 ,  C23C14/04 ,  C23C14/12 ,  C23C14/243 ,  C23C14/54

摘要： A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.

摘要翻译： 提供了一种清除附着在不暴露于大气中的设备的气相沉积材料的方法。 将附着在设置在成膜室上的设备（成膜装置的部件）如基板保持器，蒸镀掩模，掩模保持器或防粘附屏蔽物的气相沉积材料进行热处理 。 因此，附着的气相沉积材料被重新升华，并通过真空泵通过排气除去。 通过在制造电光装置的步骤中包括这种清洁方法，缩短了制造步骤，并且可以实现具有高可靠性的电光装置。

公开(公告)号：US20080286940A1

公开(公告)日：2008-11-20

申请号：US12170663

申请日：2008-07-10

申请人： Takeshi FUKUNAGA

发明人： Takeshi FUKUNAGA

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/146 ,  H01L29/78621 ,  Y10S438/96

摘要： A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.

摘要翻译： 一种制造粘附的SOI衬底而不会引起单晶硅薄膜的破裂和剥离的方法。 该方法包括在单晶半导体衬底中选择性地形成多孔硅层，向单晶半导体衬底中加入氢以形成加氢层，将单晶半导体衬底粘附到支撑衬底上， 通过热退火在氢添加层的晶体半导体衬底，再次进行热退火以稳定粘合界面，并且选择性地除去多孔硅层，得到分成岛的单晶硅层。

公开(公告)号：US20130037884A1

公开(公告)日：2013-02-14

申请号：US13549914

申请日：2012-07-16

申请人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Jun KOYAMA ,  Takeshi FUKUNAGA

发明人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Jun KOYAMA ,  Takeshi FUKUNAGA

IPC分类号： H01L29/786

CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/42324 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/7881

摘要： An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the drain region. Regions interposed between the pinning regions serve as channel forming regions. A tunnel oxide film, a floating gate, a control gate, etc. are formed on the above structure. The impurity regions prevent a depletion layer from expanding from the source region toward the drain region.

公开(公告)号：US20110012818A1

公开(公告)日：2011-01-20

申请号：US12892277

申请日：2010-09-28

申请人： Yukio YAMAUCHI ,  Takeshi FUKUNAGA

发明人： Yukio YAMAUCHI ,  Takeshi FUKUNAGA

IPC分类号： G09G3/30 ,  H01L33/50

CPC分类号： G09G3/3225 ,  G09G3/2018 ,  G09G3/2022 ,  G09G3/30 ,  G09G3/32 ,  G09G3/3258 ,  G09G2300/023 ,  G09G2300/04 ,  G09G2300/0408 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0842 ,  H01L27/1277 ,  H01L27/1296 ,  H01L27/156 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/0603 ,  H01L29/786 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L33/62 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2924/0002 ,  H01L2924/00

摘要： An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.

摘要翻译： 提供能够进行清晰的多灰度级彩色显示的EL显示装置和设置有EL显示装置的电子设备，其中根据其中EL元件的发光和非发光的时分驱动方法进行灰度显示 设置在像素（104）中的（109）由时间控制，并且防止了电流控制TFT（108）的特性变化的影响。 当使用该方法时，数据信号侧驱动电路（102）和栅极信号侧驱动电路（103）由具有特殊晶体结构的硅膜和显示极高运算速度的TFT形成。

公开(公告)号：US20090075460A1

公开(公告)日：2009-03-19

申请号：US12269294

申请日：2008-11-12

申请人： Hisashi OHTANI ,  Takeshi FUKUNAGA ,  Akiharu MIYANAGA

发明人： Hisashi OHTANI ,  Takeshi FUKUNAGA ,  Akiharu MIYANAGA

IPC分类号： H01L21/20

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L29/66757

摘要： A process for fabricating a semiconductor device comprising the steps of introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：向非晶硅膜引入加速非晶硅膜结晶的金属元素; 对非晶硅膜进行热处理以获得结晶硅膜; 向结晶硅膜照射激光束或强光; 并对用激光束或强光照射的结晶硅膜进行热处理。

公开(公告)号：US20100144111A1

公开(公告)日：2010-06-10

申请号：US12705994

申请日：2010-02-16

申请人： Takeshi FUKUNAGA

发明人： Takeshi FUKUNAGA

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/146 ,  H01L29/78621 ,  Y10S438/96

摘要： A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.

摘要翻译： 一种制造粘附的SOI衬底而不会引起单晶硅薄膜的破裂和剥离的方法。 该方法包括在单晶半导体衬底中选择性地形成多孔硅层，向单晶半导体衬底中加入氢以形成加氢层，将单晶半导体衬底粘附到支撑衬底上， 通过热退火在氢添加层的晶体半导体衬底，再次进行热退火以稳定粘合界面，并且选择性地除去多孔硅层，得到分成岛的单晶硅层。

公开(公告)号：US20060145153A1

公开(公告)日：2006-07-06

申请号：US11275850

申请日：2006-01-31

申请人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Takeshi FUKUNAGA

发明人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Takeshi FUKUNAGA

IPC分类号： H01L31/0376

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1277 ,  H01L29/78696

摘要： A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal oxidation treatment to the active layer, the impurity element is subjected to redistribution, and the concentration of the impurity element in the principal surface of the active layer is minimized. The precise control of threshold voltage is enabled by the impurity element that is present in a trace quantity.

摘要翻译： 具有CMOS结构的半导体器件，其中在制造CMOS电路时，在形成栅极绝缘膜之前添加赋予P沟道型半导体器件的有源层p型导电性的杂质元素。 然后，通过对有源层进行热氧化处理，对杂质元素进行再分配，使有源层主表面的杂质元素的浓度最小化。 阈值电压的精确控制由痕量存在的杂质元素使能。