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    Display device, method for manufacturing thereof, and television device
    1.
    发明授权
    Display device, method for manufacturing thereof, and television device 有权
    显示装置及其制造方法以及电视装置

    公开(公告)号：US08518760B2

    公开(公告)日：2013-08-27

    申请号：US13050117

    申请日：2011-03-17

    申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Shinji Maekawa ,  Gen Fujii ,  Toshiyuki Isa

    发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Shinji Maekawa ,  Gen Fujii ,  Toshiyuki Isa

    IPC分类号： H01L21/84

    CPC分类号： H01L51/0022 ,  G09G3/3208 ,  G09G3/3225 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3244 ,  H01L51/055 ,  H01L51/529

    摘要： The invention provides a display device and a method for manufacturing thereof by increasing a material efficiently as well as simplifying steps. Also, the invention provides a technique for forming a pattern such as a wiring, that is used for forming a display device, to have a predetermined shape with an excellent controllability. The method for manufacturing a display device includes the steps of: forming a lyophobic region; selectively irradiating laser beam in the lyophobic region to form a lyophilic region; selectively discharging a composition, that contains a conductive material, in the lyophilic region to form a gate electrode layer; forming a gate insulating layer and a semiconductor layer over the gate electrode layer; discharging a composition containing a conductive material over the semiconductor layer to form a source electrode layer and a drain electrode layer; and forming a pixel electrode layer on the source or drain electrode layer.

    摘要翻译： 本发明提供一种显示装置及其制造方法，其通过有效地增加材料以及简化步骤来制造。 此外，本发明提供了一种用于形成用于形成显示装置的布线等图案以具有优异的可控性的预定形状的技术。 制造显示装置的方法包括以下步骤：形成疏液区域; 选择性地将激光束照射在疏液区域以形成亲液性区域; 选择性地将含有导电材料的组合物在亲液区域中排出以形成栅极电极层; 在栅电极层上形成栅极绝缘层和半导体层; 在半导体层上排出含有导电材料的组合物，以形成源电极层和漏电极层; 以及在源极或漏极电极层上形成像素电极层。

    Display device and television device using the same
    3.
    发明授权
    Display device and television device using the same 有权
    显示设备和电视设备使用相同

    公开(公告)号：US07939888B2

    公开(公告)日：2011-05-10

    申请号：US11857729

    申请日：2007-09-19

    申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Shinji Maekawa ,  Gen Fujii ,  Toshiyuki Isa

    发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Shinji Maekawa ,  Gen Fujii ,  Toshiyuki Isa

    IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

    CPC分类号： H01L51/0022 ,  G09G3/3208 ,  G09G3/3225 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3244 ,  H01L51/055 ,  H01L51/529

    摘要： The invention provides a display device and a method for manufacturing thereof by increasing a material efficiently as well as simplifying steps. Also, the invention provides a technique for forming a pattern such as a wiring, that is used for forming a display device, to have a predetermined shape with an excellent controllability. The method for manufacturing a display device includes the steps of: forming a lyophobic region; selectively irradiating laser beam in the lyophobic region to form a lyophilic region; selectively discharging a composition, that contains a conductive material, in the lyophilic region to form a gate electrode layer; forming a gate insulating layer and a semiconductor layer over the gate electrode layer; discharging a composition containing a conductive material over the semiconductor layer to form a source electrode layer and a drain electrode layer; and forming a pixel electrode layer on the source or drain electrode layer.

    摘要翻译： 本发明提供一种显示装置及其制造方法，其通过有效地增加材料以及简化步骤来制造。 此外，本发明提供了一种用于形成用于形成显示装置的布线等图案以具有优异的可控性的预定形状的技术。 制造显示装置的方法包括以下步骤：形成疏液区域; 选择性地将激光束照射在疏液区域以形成亲液性区域; 选择性地将含有导电材料的组合物在亲液区域中排出以形成栅极电极层; 在栅电极层上形成栅极绝缘层和半导体层; 在半导体层上排出含有导电材料的组合物，以形成源电极层和漏电极层; 以及在源极或漏极电极层上形成像素电极层。

    Method of manufacturing semiconductor device and semiconductor device
    4.
    发明授权
    Method of manufacturing semiconductor device and semiconductor device 有权
    制造半导体器件和半导体器件的方法

    公开(公告)号：US07821005B2

    公开(公告)日：2010-10-26

    申请号：US11404923

    申请日：2006-04-17

    申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka

    发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka

    IPC分类号： H01L29/10 ,  H01L29/76 ,  H01L31/112

    CPC分类号： H01L29/78621 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1255 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78633 ,  H01L29/78645 ,  Y10S257/913

    摘要： Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×1020/cm3 or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group 18 of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.

    摘要翻译： 通过离子掺杂法将磷注入到结晶半导体膜中。 然而，吸杂所需的磷的浓度为1×10 10 / cm 3以上，这阻碍后续退火的再结晶，因此成为问题。 此外，当以高浓度添加磷时，掺杂所需的处理时间增加，并且掺杂步骤中的生产量降低，因此这成为问题。 本发明的特征在于，在具有晶体结构的半导体膜中形成杂质区域，其中添加了属于元素周期表第18族的元素，并且在杂质区域中分离出包含在半导体膜中的金属元素的吸杂剂 通过热处理进行。 此外，杂质区域中也可以含有一种导电型杂质。

    Display device and method for manufacturing the same, and television receiver
    5.
    发明授权
    Display device and method for manufacturing the same, and television receiver 失效
    显示装置及其制造方法以及电视接收机

    公开(公告)号：US07709843B2

    公开(公告)日：2010-05-04

    申请号：US10574880

    申请日：2004-10-25

    申请人： Shunpei Yamazaki ,  Shinji Maekawa ,  Makoto Furuno ,  Osamu Nakamura ,  Keitaro Imai

    发明人： Shunpei Yamazaki ,  Shinji Maekawa ,  Makoto Furuno ,  Osamu Nakamura ,  Keitaro Imai

    IPC分类号： H01L29/786

    CPC分类号： H01L27/12 ,  H01L27/1292 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/66765 ,  H01L51/56

    摘要： According to the present invention, which is a display device in which a light-emitting element where an organic substance generating luminescence referred to as electroluminescence or a medium including a mixture of an organic substance and an inorganic substance is sandwiched between electrodes is connected to a TFT, the invention is to manufacture a display panel by forming at least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask layer for forming a predetermined pattern is formed by a method capable of selectively forming a pattern. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object and by forming a conductive layer or an insulating layer is used as a method capable of selectively forming a pattern.

    摘要翻译： 根据本发明，其中将发出被称为电致发光的有机物质的发光元件或包含有机物和无机物的混合物的介质夹在电极之间的发光元件连接到 TFT，本发明通过形成至少一个或多个形成布线或电极的导电层以及用于制造用于形成预定图案的掩模层等显示面板所需的图案来制造显示面板，由 能够选择性地形成图案的方法。 使用能够通过选择性地排出根据特定目的的组合物的液滴并且通过形成导电层或绝缘层来形成预定图案的液滴喷射方法作为能够选择性地形成图案的方法。

    Electronics device, semiconductor device, and method for manufacturing the same
    7.
    发明授权
    Electronics device, semiconductor device, and method for manufacturing the same 有权
    电子器件，半导体器件及其制造方法

    公开(公告)号：US07465593B2

    公开(公告)日：2008-12-16

    申请号：US12007293

    申请日：2008-01-09

    申请人： Shunpei Yamazaki ,  Masaharu Nagai ,  Osamu Nakamura

    发明人： Shunpei Yamazaki ,  Masaharu Nagai ,  Osamu Nakamura

    IPC分类号： H01L21/00

    CPC分类号： H01L27/3244 ,  G02F1/13454 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/5246 ,  H01L51/529 ,  H01L2251/5323

    摘要： It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, application is used as a method for forming a high thermostability planarizing film 16, typically, an interlayer insulating film (a film which serves as a base film of a light emitting element later) of a TFT in which a skeletal structure is configured by the combination of silicon (Si) and oxygen (O). After the formation, an edge portion or an opening portion is formed to have a tapered shape. Afterwards, distortion is given by adding an inert element with a comparatively large atomic radius to modify or highly densify a surface (including a side surface) for preventing the intrusion of moisture or oxygen.

    摘要翻译： 本发明的目的是提供一种高可靠性的EL显示装置及其制造方法，该EL显示装置及其制造方法通过屏蔽侵入的水分或氧气，这是使EL元件的特性劣化而不扩大EL显示装置的因素。 在本发明中，作为用于形成高热稳定性平坦化膜16的方法，通常使用其中骨架结构是TFT的TFT层的绝缘膜（用作发光元件的基膜的膜） 由硅（Si）和氧（O）的组合构成。 在形成之后，形成具有锥形形状的边缘部分或开口部分。 然后，通过添加具有较大原子半径的惰性元素来改变或高度致密化表面（包括侧表面）以防止水分或氧气的侵入而给出变形。

    Droplet discharge apparatus
    8.
    发明授权
    Droplet discharge apparatus 有权
    滴液排放装置

    公开(公告)号：US07401885B2

    公开(公告)日：2008-07-22

    申请号：US11197835

    申请日：2005-08-05

    申请人： Shunpei Yamazaki ,  Osamu Nakamura

    发明人： Shunpei Yamazaki ,  Osamu Nakamura

    IPC分类号： B41J2/015 ,  B41J2/14 ,  B41J2/175

    CPC分类号： B41J2/165 ,  B41J2/14016 ,  B41J2/14201 ,  B41J2202/05

    摘要： An object of the invention is to provide a droplet discharge apparatus which does not cause defective discharge due to drying, solidification, or the like of a composition in discharging the composition from a nozzle. One feature of the invention is to comprise a nozzle portion provided with a nozzle hole for discharging a composition, a piezo method for discharging the composition from the nozzle hole, a channel for supplying the composition to the bottom surface of the nozzle portion, wherein lyophilic treatment is performed on the bottom surface of the nozzle portion.

    摘要翻译： 本发明的目的是提供一种液滴喷射装置，其在从喷嘴排出组合物时不会由于组合物的干燥，固化等而引起不良的排出。 本发明的一个特征是包括一个喷嘴部分，其具有用于排出组合物的喷嘴孔，用于从喷嘴孔排出组合物的压电方法，用于将组合物供给到喷嘴部分的底表面的通道，其中亲液 在喷嘴部的底面上进行处理。

    Method of manufacturing a semiconductor device
    9.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07384860B2

    公开(公告)日：2008-06-10

    申请号：US10941000

    申请日：2004-09-15

    申请人： Osamu Nakamura ,  Manabu Katsumura ,  Shunpei Yamazaki

    发明人： Osamu Nakamura ,  Manabu Katsumura ,  Shunpei Yamazaki

    IPC分类号： H01L21/36 ,  H01L21/20 ,  H01L21/84

    CPC分类号： H01L21/02672 ,  H01L21/2022 ,  H01L21/3226 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

    摘要： The present invention relates to a method of manufacturing a semiconductor device having an excellent gettering effect. In this method, when phosphorus is added to a poly-Si film, which has been crystallized by the addition of a metal, to subject the resultant poly-Si film to the heat treatment to carry out gettering therefor, the device is performed for the shape of the island-like insulating film on the poly-Si film which is employed when implanting phosphorus. Thereby, the area of the boundary surface between the region to which phosphorus has been added and the region to which no phosphorus has been added is increased to enhance gettering efficiency.

    摘要翻译： 本发明涉及一种制造具有优异吸气效果的半导体器件的方法。 在这种方法中，当通过添加金属将已经结晶的多晶硅膜加入磷中时，为了进行吸热而使得到的多晶硅膜进行热处理，对于 在植入磷时使用的多晶硅膜上的岛状绝缘膜的形状。 由此，增加了添加了磷的区域与没有添加磷的区域之间的边界面的面积，以提高吸气效率。