摘要:
The present invention provides a nonlinear semiconductor element which has a V-I characteristic of excellent origin symmetry and a liquid crystal display panel which employs such nonlinear semiconductor element. The nonlinear semiconductor has an n-i-n, n-i-p-i-n, or p-i-n-i-p type structure. The i-type semiconductor layer is intentionally doped with boron, which acts to make the i-type semiconductor layer more intrinsic.
摘要:
A method for manufacturing a liquid crystal device including forming a semiconductor layer on a first substrate and an underlying conductive layer; separating the semiconductor layer and the underlying conductive layer into the elements of an array by removing the parts of the semiconductor and the conductive layer between the elements; insulating the side surfaces of the elements of said array; forming an overlying conductive layer on the first substrate over the array; removing the conductive layer other than at least one strip extending over a part of each surface of the elements arranged in a line, together with the underlying semiconductor layer whereby parts of the separated underlying conductors are exposed in the form of a plurality of first electrodes; and mating the first substrate to a second substrate having a plurality of second electrodes corresponding to the first electrodes, with a liquid crystal layer in between.
摘要:
A plasma CVD apparatus including a reaction chamber; a pair of electrodes disposed in the reaction chamber between which plasma discharge occurs; a substrate support maintained at a reference voltage; a vacuum pump for evacuating the reaction chamber; a first voltage supply for supplying a first alternating voltage to one of the electrodes; and a second voltage supply for supplying a second alternating voltage to the other of the electrodes where the second alternating voltage is out-of-phase with respect to the first alternating voltage.
摘要:
A method of manufacturing a liquid crystal display panel including preparing a first substrate member by forming a first conductive layer serving as a first electrode on a first substrate having an insulating surface; forming a first non-single-crystal semiconductor layer laminate layer on the first substrate member where the forming of the first non-single-crystal semiconductor laminate member includes forming at least a first non-single-crystal semiconductor of P (or N) type on the substrate, forming an i-type second non-single-crystal semiconductor layer on the first non-single-crystal semiconduictor layer, the i-type layer containing an additive selected from the group consisting of carbon, nitrogen, oxygen, boron, and mixtures thereof, and forming a third non-single-crystal semiconductor layer of P (or N) type on the i-type second non-single-crystal semiconductor layer; forming a second conductive layer serving as a second electrode in a pattern on the first non-single-crystal semiconductor layer laminate layer in opposing relation to the first conductive layer; selectively etching away the first non-single-crystal semiconductor layer laminate member through the patterned second conductive layer to obtain a second non-single-crystal semiconductor laminate member; preparing a second substrate member by forming on a second substrate an insulating surface and a third conductive layer; and filling liquid crystal in a gap defined by the first and second substrate members.
摘要:
A ferroelectric liquid crystal display having a matrix of ferroelectric liquid crystal elements and nonlinear elements having a diode characteristic in which the liquid crystal elements are connected in series with the nonlinear elements. The first substrate member comprises (a) a transparent first substrate having an insulating surface, (b) a plurality of m.times.n (m>1, n>1) of rectangular transparent conductive layers C.sub.11 to C.sub.1n, C.sub.21 to C.sub.2n, . . . C.sub.m1 to C.sub.mn arranged on the substrate in a matrix form on the first substrate, (c) a layer member A.sub.ij formed on the conductive layer C.sub.ij (where i=1, 2 . . . m and j=1, 2 . . . n) and (d) a stripe-like conductive layer F.sub.i extending in the row direction and making contact with layer member A.sub.i1 to A.sub.in on the side opposite from the conductive layer C.sub.i1 to C.sub.in, wherein the opposing side surfaces a and a' of the layer member A.sub.ij defining is length are substantially aligned with the opposing side surfaces b and b' of the conductive layer C.sub.ij defining its width, respectively, and wherein the opposing side surface b and b' of the layer member A.sub.ij defining its width are substantially aligned with the opposing side surfaces b and b' of the conductive layer F.sub.i defining its width, respectively. The layer member A.sub.ij may be a laminate layer of a first nontransparent conductive layer, non-single-crystal semiconductor layer member or thin insulating layer which permits passage therethrough of tunnel current and a second nontransparent conductive layer.
摘要:
A electronic multilayer device is formed within a photocured insulative layer using a transparent substrate thereby forming a surface contamination free device without shorts between the layers of the device.
摘要:
A method of forming an insulated, non-linear, multi-layered, electronic element on a transparent substrate by surrounding the element with a photocurable resin and exposing the photocurable resin to light from the side of the transparent substrate, the photocurable resin being heat-hardened before and after the light exposure thereof so that the resulting insulating layer prevents electrical short circuits between the layers of the non-linear, multi-layered, electronic element.
摘要:
A method of forming an insulated, non-linear, multi-layered, electronic element on a transparent substrate by surrounding the element with a photosensitive organic resin layer and exposing the photosensitive layer to light from the side of the transparent substrate, the photosensitive layer being heat-hardened before and after the light exposure thereof so that the resulting insulating layer prevents electrical short circuits between the layers of the non-linear, multi-layered, electronic element.
摘要:
Disclosed is a method for producing image sensors having a plurality of sensing elements including the formation of parallel separating grooves by laser irradiation, the filling of the grooves with an insulating film, and the subsequent provision of a groove in the insulating film in a direction diagonal to the parallel grooves for metallization.