公开(公告)号：US20060290021A1

公开(公告)日：2006-12-28

申请号：US11453974

申请日：2006-06-16

申请人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

发明人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

IPC分类号： B29C47/00 ,  B32B23/08

CPC分类号： H01L51/0541 ,  H01L51/0022 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/105 ,  H01L2251/105

摘要： A method of forming an electronic device on a substrate 10, comprising: embossing the substrate 10, surface treating the substrate so that unindented portions 11 repel a solution of a first material 60, and depositing a solution of the first material 60 in indentations 12 on the substrate 10 formed by the embossing. The substrate is then annealed so that level of the first material is the same as the surface of the substrate. The first material 60 in the indentations can then, for example, be used as the source and drain in the subsequent formation of a TFT.

摘要翻译： 一种在基板10上形成电子器件的方法，包括：对基片10进行压花处理，对基片进行表面处理，使得未凹陷部分11排斥第一材料60的溶液，并将第一材料60的溶液沉积在压痕12中 通过压花形成的基板10。 然后将衬底退火，使得第一材料的水平与衬底的表面相同。 然后，凹陷中的第一材料60可以例如在随后的TFT形成中被用作源极和漏极。

公开(公告)号：US20060128076A1

公开(公告)日：2006-06-15

申请号：US11253756

申请日：2005-10-20

申请人： Shunpu Li ,  Thomas Kugler ,  Christopher Newsome ,  David Russell

发明人： Shunpu Li ,  Thomas Kugler ,  Christopher Newsome ,  David Russell

IPC分类号： H01L21/461

CPC分类号： H01L51/105 ,  H01L21/823456 ,  H01L27/1292 ,  H01L27/285 ,  H01L51/0037 ,  H01L51/0516 ,  H01L51/0545

摘要： The present invention relates to a self-aligning patterning method which can be used to manufacture a plurality of multi-layer thin film transistors on a substrate. The method comprises firstly forming a patterned mask 20 on the surface of a sacrificial layer 18 which is part of a multi-layer structure 10 which comprises the substrate 12, a conductive layer 14, an insulating layer 16 and the sacrificial layer 18. Unpatterned areas are then etched to remove the corresponding areas of the sacrificial layer, the insulating layer 16 and the conductive layer 14 thereby leaving voids. A layer of dielectric 22 is then deposited over the etched multi-layer structure to at least substantially fill the voids. The deposited dielectric is then etched in order to at least partially expose the sides of the remaining areas 28 of the sacrificial layer. Conductive material 30 is then deposited on the surface of the etched dielectric. Finally, the remaining areas 28 of the sacrificial layer are removed together with any overlying material. The resulting plurality of multi-layer thin film transistors is preferably in the form of an array which may in turn be formed into a display device by coupling each transistor in the array to a light-emitting cell.

摘要翻译： 本发明涉及可用于在基板上制造多个多层薄膜晶体管的自对准图案化方法。 该方法包括首先在牺牲层18的表面上形成图案化掩模20，牺牲层18是多层结构10的一部分，其包括基底12，导电层14，绝缘层16和牺牲层18.未图案化的区域 然后蚀刻以除去牺牲层，绝缘层16和导电层14的相应区域，从而留下空隙。 然后将一层电介质22沉积在蚀刻的多层结构上以至少基本上填充空隙。 然后蚀刻沉积的电介质以便至少部分地暴露牺牲层的剩余区域28的侧面。 然后将导电材料30沉积在蚀刻的电介质的表面上。 最后，牺牲层的剩余区域28与任何上覆材料一起被去除。 所得到的多个多层薄膜晶体管优选地是阵列的形式，其可以通过将阵列中的每个晶体管耦合到发光单元而依次形成为显示装置。

公开(公告)号：US07851344B2

公开(公告)日：2010-12-14

申请号：US11520668

申请日：2006-09-14

申请人： Thomas Kugler ,  Shunpu Li ,  Christopher Newsome ,  David Russell

发明人： Thomas Kugler ,  Shunpu Li ,  Christopher Newsome ,  David Russell

IPC分类号： H01L21/44

CPC分类号： H05K3/125 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/0004 ,  H01L51/0012 ,  H01L51/0097 ,  H01L2251/105 ,  H01L2251/5369 ,  H05K1/0393 ,  H05K3/1208 ,  H05K2203/013 ,  H05K2203/095 ,  H05K2203/097 ,  H05K2203/1173 ,  Y02E10/549 ,  Y02P70/521

摘要： The present invention relates to flexible substrates having on their surface a wetting contrast. The wetting contrast comprises adjacent areas of different hydrophilicity and/or oleophilicity. The present invention further relates to methods of production of such substrates and to methods of producing microelectronic components wherein electronically functional material is deposited onto said substrates.According to a first aspect of the present invention, a method of producing a flexible substrate having a wetting contrast is provided. The method includes the step of forming a first area comprising an inorganic material on a flexible substrate precursor to form a substrate wherein the inorganic material is at least partially exposed at the substrate surface and the first area constitutes a pattern on the precursor surface.

摘要翻译： 本发明涉及在其表面上具有润湿对比度的柔性基底。 润湿对比度包括不同亲水性和/或亲油性的相邻区域。 本发明还涉及这种基材的制造方法以及生产微电子部件的方法，其中将电子功能材料沉积在所述基材上。 根据本发明的第一方面，提供了具有润湿对比度的柔性基板的制造方法。 该方法包括在柔性基板前体上形成包含无机材料的第一区域以形成基板的步骤，其中无机材料在基板表面处至少部分地暴露，并且第一区域在前体表面上构成图案。

公开(公告)号：US07468287B2

公开(公告)日：2008-12-23

申请号：US11363063

申请日：2006-02-28

申请人： Christopher Newsome ,  Thomas Kugler ,  Shunpu Li ,  David Russell

发明人： Christopher Newsome ,  Thomas Kugler ,  Shunpu Li ,  David Russell

IPC分类号： H01L21/00

CPC分类号： H01L51/0005 ,  H01L51/0007 ,  H01L51/424 ,  Y02E10/549

摘要： Provided is a method of forming a heterojunction of contiguous layers of organic semiconducting polymers. The method comprises firstly forming a layer of a first organic semiconducting polymer on a substrate. A solution of a film-forming material is then deposited on the layer of the first organic semiconducting polymer. The first organic semiconducting polymer is insoluble in this solution and so is not disturbed by its deposition. The deposited solution is then dried to form a temporary film having a thickness of less then 20 nm formed from the film-forming material. Next a solution of a second organic semiconducting polymer dissolved in an organic solvent is deposited on the temporary film and this solution dried. The solubility of the material forming the temporary film in the organic solvent and the thickness of the temporary film are such that the organic solvent permeates through the thickness of the temporary film during drying of the solution of the second organic semiconducting polymer. This causes the temporary film to break down but without disturbing the layer of the first organic semiconducting polymer so that the layer of the second organic semiconducting polymer is formed contiguously on the layer of the first organic semiconducting polymer.

摘要翻译： 提供了形成有机半导体聚合物的连续层的异质结的方法。 该方法包括首先在衬底上形成第一有机半导体聚合物层。 然后将成膜材料的溶液沉积在第一有机半导体聚合物的层上。 第一种有机半导体聚合物不溶于该溶液，因此不会因其沉积而受到干扰。 然后将沉积的溶液干燥以形成由成膜材料形成的厚度小于20nm的临时膜。 接下来，将溶解在有机溶剂中的第二有机半导体聚合物的溶液沉积在临时膜上，并将该溶液干燥。 形成临时膜的材料在有机溶剂中的溶解度和临时膜的厚度使得有机溶剂在第二有机半导体聚合物的溶液的干燥期间渗透临时膜的厚度。 这导致临时膜破裂但不干扰第一有机半导体聚合物的层，使得第二有机半导体聚合物的层在第一有机半导体聚合物的层上连续形成。

公开(公告)号：US20070105396A1

公开(公告)日：2007-05-10

申请号：US11589207

申请日：2006-10-30

申请人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

发明人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L51/0003 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L51/0012 ,  H01L51/0529 ,  H01L51/56

摘要： Disclosed is a method for fabricating an electronic device, the method comprising creating a surface energy pattern on a substrate and brush painting a first fluid onto the substrate to form a pattern of fluid corresponding to the surface energy pattern on the substrate. Also disclosed is a thin film transistor comprising a conductive layer, a layer of insulator formed on the conductive layer, a pattern of conductive material and a first self-assembled monolayer (SAM) formed on the layer of insulator, a second SAM formed on the conductive material, and a semiconductor layer formed on the first SAM and the second SAM. Further disclosed is a brush painting apparatus comprising an ink-absorbent brush head, an ink container connected to the brush head by an ink flow path and a conveyor belt, wherein a surface of the conveyor belt faces the brush head.

摘要翻译： 公开了一种制造电子器件的方法，该方法包括在衬底上产生表面能量图案，并将第一流体刷涂到衬底上以形成与衬底上的表面能量图案相对应的流体图案。 还公开了一种薄膜晶体管，其包括导电层，形成在导电层上的绝缘体层，导电材料图案和形成在绝缘体层上的第一自组装单层（SAM），形成在绝缘体层上的第二SAM 导电材料和形成在第一SAM和第二SAM上的半导体层。 进一步公开了一种刷涂装置，其包括吸墨刷头，通过油墨流路连接到刷头的油墨容器和传送带，其中传送带的表面面向刷头。

公开(公告)号：US20070082438A1

公开(公告)日：2007-04-12

申请号：US11540729

申请日：2006-10-02

申请人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

发明人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

IPC分类号： H01L21/8238

CPC分类号： H01L51/055 ,  H01L51/0512

摘要： A method for fabricating an electronic device is disclosed, the method comprising depositing a first layer of insulator over a substrate, depositing a first layer portion over the insulator using a printing technique, and removing a portion of the insulator using a photo-exposure technique or an etching technique, using the first layer portion as a mask. A vertical short channel thin film transistor is also disclosed, the transistor comprising a substrate, a first electrode formed over the substrate, a first layer of insulator formed over a portion of the first electrode, a second electrode formed over the first layer of insulator, a semiconductor layer forming a channel between the first and second electrodes, a dielectric layer formed over the semiconductor layer, and a gate electrode formed over the dielectric layer, wherein the gate electrode spans at least a part of the channel between the first and second electrodes.

摘要翻译： 公开了一种用于制造电子器件的方法，所述方法包括在衬底上沉积第一绝缘体层，使用印刷技术在绝缘体上沉积第一层部分，以及使用照相曝光技术去除绝缘体的一部分， 使用第一层部分作为掩模的蚀刻技术。 还公开了一种垂直短沟道薄膜晶体管，所述晶体管包括衬底，形成在衬底上的第一电极，形成在第一电极的一部分上的第一绝缘体层，形成在第一绝缘体层上的第二电极， 形成在所述第一和第二电极之间的沟道的半导体层，形成在所述半导体层上的电介质层以及形成在所述电介质层上的栅电极，其中所述栅电极跨越所述第一和第二电极之间的所述沟道的至少一部分 。

公开(公告)号：US07582509B2

公开(公告)日：2009-09-01

申请号：US11453974

申请日：2006-06-16

申请人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

发明人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

IPC分类号： H01L21/84

CPC分类号： H01L51/0541 ,  H01L51/0022 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/105 ,  H01L2251/105

摘要： A method of forming an electronic device on a substrate 10, comprising: embossing the substrate 10, surface treating the substrate so that unindented portions 11 repel a solution of a first material 60, and depositing a solution of the first material 60 in indentations 12 on the substrate 10 formed by the embossing. The substrate is then annealed so that level of the first material is the same as the surface of the substrate. The first material 60 in the indentations can then, for example, be used as the source and drain in the subsequent formation of a TFT.

摘要翻译： 一种在基板10上形成电子器件的方法，包括：对基片10进行压花处理，对基片进行表面处理，使得未凹陷部分11排斥第一材料60的溶液，并将第一材料60的溶液沉积在压痕12中 通过压花形成的基板10。 然后将衬底退火，使得第一材料的水平与衬底的表面相同。 然后，凹陷中的第一材料60可以例如在随后的TFT形成中用作源极和漏极。

公开(公告)号：US07468329B2

公开(公告)日：2008-12-23

申请号：US11350725

申请日：2006-02-10

申请人： David Russell ,  Thomas Kugler ,  Christopher Newsome ,  Shunpu Li

发明人： David Russell ,  Thomas Kugler ,  Christopher Newsome ,  Shunpu Li

IPC分类号： H01L21/469 ,  H01L23/58

CPC分类号： C08G73/026 ,  C08G61/10 ,  C08G61/126 ,  C08G2261/312

摘要： The present invention relates to a method of dedoping an organic semiconductor comprising the step of contacting a doped organic semiconductor with a compound of formula (1): wherein R1-R8 each independently represents a hydrogen atom or a C1-C6 alkyl group which may be linear or branched and which may be optionally substituted with one or more hydroxyl groups and/or one or more halogen atoms and/or a C1-C3 alkoxy group; one or more pairs of R groups which are not hydrogen may join to form a cyclic group according to the following pairings: R1 and R2; R2 and R3; R3 and R4; R4 and R5; R5 and R6; R6 and R7; R7 and R8; and R8 and R1.

摘要翻译： 本发明涉及一种去掺杂有机半导体的方法，包括使掺杂的有机半导体与式（1）化合物接触的步骤：其中R 1 -R 8各自独立地表示氢原子或可以是 其可任选被一个或多个羟基和/或一个或多个卤素原子和/或C 1 -C 3烷氧基取代; 一对或多对不是氢的R基团可以根据以下配对连接形成环状基团：R1和R2; R2和R3; R3和R4; R4和R5; R5和R6; R6和R7; R7和R8; 和R8和R1。

公开(公告)号：US07439193B2

公开(公告)日：2008-10-21

申请号：US11320582

申请日：2005-12-30

申请人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

发明人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

IPC分类号： H01L21/00

CPC分类号： H01L21/0338 ,  H01L21/0272 ,  H01L21/0331 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L27/1292 ,  H01L27/285 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/105

摘要： Provided is a patterning method capable of fabricating high resolution structures without using a high resolution patterning step. The method comprises the steps of: (i) pre-patterning a layer of material (12) on a substrate (10), (ii) spin-coating a solution of a film-forming substance over the pre-patterned substrate, (iii) drying the spin-coated solution to form a film (14) of the film-forming substance on the unpatterned areas of the substrate and on the surface and sides of the pre-patterned material, (iv) etching the dried film in such a way that it remains only around the sides of the pre-patterned material, and (v) removing the pre-patterned material to leave ridges (20) of the film-forming substance on the substrate, the pattern of the ridges corresponding to the outline of the pre-patterned material.A metal layer may then be deposited on the resulting patterned substrate followed by removal of the ridges leaving discrete areas of metal which form latent source and drain electrodes of a thin film transistor. An array of thin film transistors may then be formed by selectively depositing areas of semiconductor, insulator and conductor, the latter forming a gate electrode associated with each pair of source and drain electrodes.

摘要翻译： 提供了一种能够在不使用高分辨率图案化步骤的情况下制造高分辨率结构的图案化方法。 该方法包括以下步骤：（i）在衬底（10）上预先图案化材料层（12），（ii）在预图案化衬底上旋涂成膜物质的溶液，（iii） ）干燥旋转涂覆的溶液以在基底的未图案区域和预图案化材料的表面和侧面上形成成膜物质的膜（14），（iv）将这样的干燥膜蚀刻 它仅保留在预图案化材料的侧面周围，并且（v）去除预先图案化的材料以将成膜物质的脊（20）留在衬底上，对应于轮廓的脊的图案 的预图案材料。 然后可以在所得到的图案化衬底上沉积金属层，然后去除留下形成薄膜晶体管的潜在源极和漏极的离散的金属区域的脊。 然后可以通过选择性地沉积半导体，绝缘体和导体的区域来形成薄膜晶体管阵列，后者形成与每对源极和漏极电极相关联的栅电极。

公开(公告)号：US07271098B2

公开(公告)日：2007-09-18

申请号：US11102711

申请日：2005-04-11

申请人： Shunpu Li ,  Christopher Newsome ,  Thomas Kugler ,  David Russell

发明人： Shunpu Li ,  Christopher Newsome ,  Thomas Kugler ,  David Russell

IPC分类号： H01L21/302

CPC分类号： H01L51/0023 ,  H01L51/0022 ,  H01L51/0037 ,  H01L51/0541

摘要： Provided is a method forming a desired pattern of electronically functional material 3 on a substrate 1. The method comprises the steps of: creating a first layer of patterning material 2 on the substrate whilst leaving areas of the substrate exposed to define said desired pattern; printing a suspension comprising particles of the electronically functional material 3 in a liquid dispersant, to which the patterning material is impervious, on the patterning material and the exposed substrate; removing at least some of the liquid dispersant from the suspension to consolidate the particles; and applying a first solvent to said consolidated particles which is capable of solubilizing the patterning material 2 and to which the consolidated particles are pervious so that the patterning material is removed from the substrate 1 together with any overlying electronically functional material 3.

摘要翻译： 提供了在基板1上形成电子功能材料3的期望图案的方法。 该方法包括以下步骤：在衬底上创建图案材料材料2的第一层，同时使衬底的区域暴露以限定所述期望图案; 将包含电子功能材料3的颗粒的悬浮液印刷在图案形成材料和暴露的基底上的图案形成材料不可渗透的液体分散剂中; 从悬浮液中除去至少一些液体分散剂以固结颗粒; 以及将第一溶剂施加到能够溶解图案形成材料2并且固结的颗粒可渗透的所述固结颗粒，使得图案材料与任何上覆的电子功能材料3一起从基板1移除。