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公开(公告)号：US08625327B2
公开(公告)日：2014-01-07
申请号：US13054577
申请日：2009-07-02
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , H01L29/66984 , H01L29/82 , H01L43/10
摘要： A domain wall motion type MRAM has: a magnetic recording layer 10 being a ferromagnetic layer having perpendicular magnetic anisotropy; a pair of current supply terminals 14a and 14b connected to the magnetic recording layer 10 for supplying a current to the magnetic recording layer 10; and an anti-ferromagnetic layer 45 being in contact with a first region R1 of the magnetic recording layer 10. The first region R1 includes a part of a current supply region RA of the magnetic recording layer 10 that is between the pair of current supply terminals 14a and 14b.
摘要翻译： 畴壁运动型MRAM具有：具有垂直磁各向异性的铁磁层的磁记录层10; 连接到用于向磁记录层10提供电流的磁记录层10的一对电流供给端子14a和14b; 以及与磁记录层10的第一区域R1接触的反铁磁层45.第一区域R1包括在一对电流供给端子之间的磁记录层10的电流供应区域RA的一部分 14a和14b。
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公开(公告)号：US20110163402A1
公开(公告)日：2011-07-07
申请号：US13061299
申请日：2009-08-13
IPC分类号： H01L29/82
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0841 , H01L27/228 , H01L43/08
摘要： A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion.
摘要翻译： 根据本发明的磁存储器具有：第一底层; 第二底层如此形成在第一底层上以与第一底层接触; 以及形成在第二底层上以与第二底层接触的数据存储层。 数据存储层由具有垂直磁各向异性的铁磁材料制成。 数据存储层的磁化状态由电流驱动畴壁运动改变。
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公开(公告)号：US20110116306A1
公开(公告)日：2011-05-19
申请号：US13054577
申请日：2009-07-02
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , H01L29/66984 , H01L29/82 , H01L43/10
摘要： A domain wall motion type MRAM has: a magnetic recording layer 10 being a ferromagnetic layer having perpendicular magnetic anisotropy; a pair of current supply terminals 14a and 14b connected to the magnetic recording layer 10 for supplying a current to the magnetic recording layer 10; and an anti-ferromagnetic layer 45 being in contact with a first region R1 of the magnetic recording layer 10. The first region R1 includes a part of a current supply region RA of the magnetic recording layer 10 that is between the pair of current supply terminals 14a and 14b.
摘要翻译： 畴壁运动型MRAM具有：具有垂直磁各向异性的铁磁层的磁记录层10; 连接到用于向磁记录层10提供电流的磁记录层10的一对电流供给端子14a和14b; 以及与磁记录层10的第一区域R1接触的反铁磁层45.第一区域R1包括在一对电流供给端子之间的磁记录层10的电流供应区域RA的一部分 14a和14b。
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公开(公告)号：US08994130B2
公开(公告)日：2015-03-31
申请号：US13145082
申请日：2010-01-28
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.
摘要翻译： 磁存储元件包括：由具有垂直磁各向异性的铁磁材料形成的第一磁化自由层; 第二磁化自由层，设置在第一磁化自由层附近并由具有面内磁各向异性的铁磁材料形成; 由具有面内磁各向异性的铁磁材料形成的参考层; 以及设置在第二磁化自由层和参考层之间的非磁性层。 第一磁化自由层包括：磁化固定的第一磁化固定区域，固定磁化的第二磁化固定区域和连接到第一磁化固定区域和第二磁化固定区域的无磁化区域， 并且其中可以切换磁化。 第二磁化自由层包含在平行于衬底的平面中的第一磁化自由层中。 第二磁化自由层设置在远离平面中的无磁化区域的第一方向上。
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公开(公告)号：US08592930B2
公开(公告)日：2013-11-26
申请号：US13504071
申请日：2010-10-21
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/5607 , G11C19/0808 , G11C2013/0083 , H01L27/228
摘要： A magnetic memory element includes: a first magnetization free layer; a non-magnetic layer; a reference layer; a first magnetization fixed layer group; and a first blocking layer. The first magnetization free layer is composed of ferromagnetic material with perpendicular magnetic anisotropy and includes a first magnetization fixed region, a second magnetization fixed region and a magnetization free region. The non-magnetic layer is provided near the first magnetization free layer. The reference layer is composed of ferromagnetic material and provided on the non-magnetic layer. The first magnetization fixed layer group is provided near the first magnetization fixed region. The first blocking layer is provided being sandwiched between the first magnetization fixed layer group and the first magnetization fixed region or in the first magnetization fixed layer group.
摘要翻译： 磁存储元件包括：第一磁化自由层; 非磁性层; 参考层; 第一磁化固定层组; 和第一阻挡层。 第一磁化自由层由具有垂直磁各向异性的铁磁材料组成，并且包括第一磁化固定区域，第二磁化固定区域和无磁化区域。 非磁性层设置在第一磁化自由层附近。 参考层由铁磁材料组成并设置在非磁性层上。 第一磁化固定层组设置在第一磁化固定区附近。 第一阻挡层被设置在第一磁化固定层组和第一磁化固定区之间或第一磁化固定层组中。
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公开(公告)号：US08514616B2
公开(公告)日：2013-08-20
申请号：US13201815
申请日：2010-02-15
IPC分类号： G11C11/14
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive effect element includes: a magnetization free layer; a non-magnetic insertion layer provided adjacent to the magnetization free layer; a magnetic insertion layer provided adjacent to the non-magnetic insertion layer and opposite to the magnetization free layer with respect to the non-magnetic insertion layer; a spacer layer provided adjacent to the magnetic insertion layer and opposite to the non-magnetic insertion layer with respect to the magnetic insertion layer; and a first magnetization fixed layer provided adjacent to the spacer layer and opposite to the magnetic insertion layer with respect to the spacer layer. The magnetization free layer and the first magnetization fixed layer have magnetization components in directions approximately perpendicular to a film surface. The magnetization free layer includes two magnetization fixed portions and a domain wall motion portion arranged between the two magnetization fixed portions. Magnetization of one of the two magnetization fixed portions and magnetization of the other of the two magnetization fixed portions are fixed approximately anti-parallel to each other in a direction approximately perpendicular to a film surface. The domain wall motion portion has a magnetic anisotropy in a direction perpendicular to a film surface.
摘要翻译： 磁阻效应元件包括：无磁化层; 与磁化自由层相邻设置的非磁性插入层; 设置在非磁性插入层附近并相对于非磁性插入层与无磁化层相反的磁性插入层; 与磁性插入层相邻地设置并与非磁性插入层相对于磁性插入层相对设置的间隔层; 以及第一磁化固定层，其相对于间隔层设置成与间隔层相邻并且与磁性插入层相对。 磁化自由层和第一磁化固定层在大致垂直于膜表面的方向上具有磁化分量。 磁化自由层包括两个磁化固定部分和布置在两个磁化固定部分之间的畴壁运动部分。 两个磁化固定部分中的一个的磁化和两个磁化固定部分中的另一个的磁化被固定为大致垂直于膜表面的方向彼此大致反平行。 畴壁运动部分在垂直于膜表面的方向上具有磁各向异性。
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公开(公告)号：US08379429B2
公开(公告)日：2013-02-19
申请号：US12864056
申请日：2009-01-13
IPC分类号： G11C19/00
CPC分类号： G11C19/0841 , B82Y25/00 , G11B5/64 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C27/00 , G11C2211/5615 , H01F10/3254 , H01F10/3286 , H01L27/228 , H01L43/08 , Y10T428/11 , Y10T428/1136 , Y10T428/1143
摘要： A domain wall motion element has a magnetic recording layer 10 that is formed of a ferromagnetic film and has a domain wall DW. The magnetic recording layer 10 has: a pair of end regions 11-1 and 11-2 whose magnetization directions are fixed; and a center region 12 sandwiched between the pair of end regions 11-1 and 11-2, in which the domain wall. DW moves. A first trapping site TS1 by which the domain wall DW is trapped is formed at a boundary between the end region 11-1, 11-2 and the center region 12. Furthermore, at least one second trapping site TS2 by which the domain wall DW is trapped is formed within the center region 12.
摘要翻译： 畴壁运动元件具有由铁磁膜形成并具有畴壁DW的磁记录层10。 磁记录层10具有：其磁化方向固定的一对端区11-1和11-2; 以及夹在所述一对端部区域11-1和11-2之间的中心区域12，其中所述畴壁。 DW移动。 在端区域11-1,11-2和中心区域12之间的边界处形成有第一陷阱位置TS1，其中畴壁DW被捕获。此外，至少一个第二陷阱位置TS2，其中域壁DW 被捕获在中心区域12内形成。
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公开(公告)号：US08120950B2
公开(公告)日：2012-02-21
申请号：US12920194
申请日：2009-03-05
IPC分类号： G11C11/15
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808
摘要： A semiconductor device includes: a first magnetic random access memory including a first memory cell and a second magnetic random access memory including a second memory cell operating at higher speed than the first memory cell and is provided on the same chip together with the first magnetic random access memory. The first memory cell is a current-induced domain wall motion type MRAM and stores data based on a domain wall position of a magnetization free layer. A layer that a write current flows is different from a layer that a read current flows. The second memory cell is a current-induced magnetic field writing type MRAM and stores data based on a magnetic field induced by a write current.
摘要翻译： 半导体器件包括：第一磁性随机存取存储器，包括第一存储单元和第二磁性随机存取存储器，所述第二磁性随机存取存储器包括以比第一存储单元更高的速度工作的第二存储单元，并且与第一磁性随机 访问内存 第一存储单元是电流感应畴壁运动型MRAM，并存储基于无磁化层的畴壁位置的数据。 写入电流流动的层与读取电流流动的层不同。 第二存储单元是电流感应磁场写入型MRAM，并且存储基于由写入电流引起的磁场的数据。
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公开(公告)号：US20110298067A1
公开(公告)日：2011-12-08
申请号：US13201815
申请日：2010-02-15
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive effect element includes: a magnetization free layer; a non-magnetic insertion layer provided adjacent to the magnetization free layer; a magnetic insertion layer provided adjacent to the non-magnetic insertion layer and opposite to the magnetization free layer with respect to the non-magnetic insertion layer; a spacer layer provided adjacent to the magnetic insertion layer and opposite to the non-magnetic insertion layer with respect to the magnetic insertion layer; and a first magnetization fixed layer provided adjacent to the spacer layer and opposite to the magnetic insertion layer with respect to the spacer layer. The magnetization free layer and the first magnetization fixed layer have magnetization components in directions approximately perpendicular to a film surface. The magnetization free layer includes two magnetization fixed portions and a domain wall motion portion arranged between the two magnetization fixed portions. Magnetization of one of the two magnetization fixed portions and magnetization of the other of the two magnetization fixed portions are fixed approximately anti-parallel to each other in a direction approximately perpendicular to a film surface. The domain wall motion portion has a magnetic anisotropy in a direction perpendicular to a film surface.
摘要翻译： 磁阻效应元件包括：无磁化层; 与磁化自由层相邻设置的非磁性插入层; 设置在非磁性插入层附近并相对于非磁性插入层与无磁化层相反的磁性插入层; 与磁性插入层相邻地设置并与非磁性插入层相对于磁性插入层相对设置的间隔层; 以及第一磁化固定层，其相对于间隔层设置成与间隔层相邻并且与磁性插入层相对。 磁化自由层和第一磁化固定层在大致垂直于膜表面的方向上具有磁化分量。 磁化自由层包括两个磁化固定部分和布置在两个磁化固定部分之间的畴壁运动部分。 两个磁化固定部分中的一个的磁化和两个磁化固定部分中的另一个的磁化被固定为大致垂直于膜表面的方向彼此大致反平行。 畴壁运动部分在垂直于膜表面的方向上具有磁各向异性。
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公开(公告)号：US20110199818A1
公开(公告)日：2011-08-18
申请号：US13120626
申请日：2009-10-29
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： An initialization method is provided for a magnetic memory element including: a data recording layer having perpendicular magnetic anisotropy which includes: a first magnetization fixed region, a second magnetization fixed region, and a magnetization free region coupled to the first magnetization fixed region and the second magnetization fixed region, the data recording layer being structure so that the coercive force of the first magnetization fixed region being different from that of the second magnetization fixed region. The initialization method includes steps of: directing the magnetizations of the first magnetization fixed region, the second magnetization fixed region and the magnetization free region in the same direction; and applying a magnetic field having both components perpendicular to and parallel to the magnetic anisotropy of the data recording layer to the data recording layer.
摘要翻译： 提供了一种用于磁存储元件的初始化方法，包括：具有垂直磁各向异性的数据记录层，其包括：第一磁化固定区域，第二磁化固定区域和耦合到第一磁化固定区域的无磁化区域， 磁化固定区域，数据记录层的结构使得第一磁化固定区域的矫顽力与第二磁化固定区域的矫顽力不同。 该初始化方法包括以下步骤：将第一磁化固定区域，第二磁化固定区域和无磁化区域的磁化指向相同方向; 以及将具有与数据记录层的磁各向异性垂直并平行的两个分量的磁场施加到数据记录层。
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