Method for manufacturing semiconductor devices
    2.
    发明授权
    Method for manufacturing semiconductor devices 失效
    制造半导体器件的方法

    公开(公告)号:US5468344A

    公开(公告)日:1995-11-21

    申请号:US186541

    申请日:1994-01-26

    CPC分类号: H01L21/6708 H01L21/6838

    摘要: The present invention is directed to a method for manufacturing semiconductor devices including a process of etching a member for use in making a semiconductor device. An improvement resides in a process for holding the member, using holding means which is placed into contact with the peripheries of the member, as well as forming a space including one face of the member, and a process for introducing a gas into the space, and blasting the gas from a clearance between the member and the holding means, as well as injecting an etching agent to the member from the opposite face side of the member to etch the other face of the member.

    摘要翻译: 本发明涉及一种用于制造半导体器件的方法,其包括蚀刻用于制造半导体器件的部件的工艺。 改进在于使用与构件的周边接触的保持装置以及形成包括构件的一个面的空间的保持构件的过程以及将气体引入到空间中的过程, 并且从构件和保持装置之间的间隙喷射气体,以及从构件的相对面侧向构件注入蚀刻剂以蚀刻构件的另一面。

    Display unit
    6.
    发明授权
    Display unit 失效
    显示单元

    公开(公告)号:US5812231A

    公开(公告)日:1998-09-22

    申请号:US492247

    申请日:1995-06-19

    摘要: A high-density impurity semiconductor region having the same conductivity type as a single-crystal silicon substrate is formed in addition to a main circuit portion of a peripheral circuit on the single-crystal silicon substrate. This semiconductor region is connected to a given potential point directly leading to an electric source. Alternatively, at a part of the peripheral drive circuit, a high-density impurity semiconductor region having a conductivity type reverse to that of the single-crystal silicon substrate is formed, and this semiconductor region is connected to a given potential point directly leading to an electric source. This can solve the problem that photocarriers (electrons and/or holes) caused by the light having not cut off and having entered into the single-crystal silicon region may enter into the peripheral drive circuit through the single-crystal silicon substrate to cause misoperation of the circuit.

    摘要翻译: 除了在单晶硅衬底上的外围电路的主电路部分之外,还形成具有与单晶硅衬底相同的导电类型的高密度杂质半导体区域。 该半导体区域连接到直接通向电源的给定电位点。 或者,在外围驱动电路的一部分,形成具有与单晶硅基板相反的导电类型的高密度杂质半导体区域,并且该半导体区域直接连接到给定的电位点, 电源。 这可以解决由未被切断并进入单晶硅区域的光引起的光载流子(电子和/或空穴)可能通过单晶硅衬底进入外围驱动电路的问题,导致误操作 电路。

    Active matrix LCD device hang a light shielding layer with particular
rubbing directions
    7.
    发明授权
    Active matrix LCD device hang a light shielding layer with particular rubbing directions 失效
    有源矩阵LCD装置具有具有特定摩擦方向的遮光层

    公开(公告)号:US5923391A

    公开(公告)日:1999-07-13

    申请号:US491732

    申请日:1995-06-19

    摘要: A liquid crystal display device comprises two parallel substrates holding a liquid crystal material filling space between two parallel substrates, wherein one of the two parallel substrates is provided, for each picture element, with a transparent electrode and a lightshielding layer which has an opening located inside the outer periphery of the transparent electrode as observed from a direction perpendicular to the two substrates, and the lightshielding layer is designed so that the distance from an outer periphery of the transparent electrode to an outer periphery of the opening is set substantially larger on the side where rubbing of one substrate is started than on the side where the rubbing is ended, whereas it is set substantially larger on the side where the rubbing of the other substrate is ended than on the side where the rubbing is started as observed from a direction perpendicular to the two substrates.

    摘要翻译: 一种液晶显示装置,包括:两个平行的基板,其在两个平行的基板之间保持液晶材料填充空间,其中为每个图像提供两个平行基板中的一个,其中透明电极和位于内部的开口的遮光层 从垂直于两个基板的方向观察透明电极的外周,并且设计遮光层,使得从透明电极的外周到开口的外周的距离在侧面被设定得大得多 其中一个基板的摩擦开始于摩擦结束的一侧,而在另一个基板的摩擦结束的一侧被设定得大于从垂直方向观察到的摩擦开始的那一侧 到两个基板。