公开(公告)号：US07311852B2

公开(公告)日：2007-12-25

申请号：US09820695

申请日：2001-03-30

申请人： Si Yi Li ,  Helen H. Zhu ,  S. M. Reza Sadjadi ,  James V. Tietz ,  Bryan A. Helmer

发明人： Si Yi Li ,  Helen H. Zhu ,  S. M. Reza Sadjadi ,  James V. Tietz ,  Bryan A. Helmer

IPC分类号： H01L21/3065

CPC分类号： H01L21/7681 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807

摘要： A semiconductor manufacturing process wherein a low-k dielectric layer is plasma etched with selectivity to an overlying mask layer. The etchant gas can be oxygen-free and include a fluorocarbon reactant, a nitrogen reactant and an optional carrier gas, the fluorocarbon reactant and nitrogen reactant being supplied to a chamber of a plasma etch reactor at flow rates such that the fluorocarbon reactant flow rate is less than the nitrogen reactant flow rate. The etch rate of the low-k dielectric layer can be at least 5 times higher than that of a silicon dioxide, silicon nitride, silicon oxynitride or silicon carbide mask layer. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.

摘要翻译： 一种半导体制造工艺，其中低k电介质层被等离子体蚀刻，对上覆掩模层具有选择性。 蚀刻剂气体可以是无氧的并且包括氟碳反应物，氮反应物和任选的载气，所述碳氟反应物和氮反应物以流速供给到等离子体蚀刻反应器的室，使得碳氟化合物反应物流速为 小于氮气反应物流量。 低k电介质层的蚀刻速率可以比二氧化硅，氮化硅，氮氧化硅或碳化硅掩模层的蚀刻速率高至少5倍。 该方法对于在形成结构如镶嵌结构中蚀刻0.25微米和较小的接触或通孔开口是有用的。

公开(公告)号：US07166535B2

公开(公告)日：2007-01-23

申请号：US10430013

申请日：2003-05-06

申请人： Si Yi Li ,  S. M. Reza Sadjadi ,  James V. Tietz

发明人： Si Yi Li ,  S. M. Reza Sadjadi ,  James V. Tietz

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

摘要： A process for plasma etching silicon carbide with selectivity to an overlying and/or underlying dielectric layer of material. The dielectric material can comprise silicon dioxide, silicon oxynitride, silicon nitride or various low-k dielectric materials including organic low-k materials. The etching gas includes a chlorine containing gas such as Cl2, an oxygen containing gas such as O2, and a carrier gas such as Ar. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrate.

摘要翻译： 用于等离子体蚀刻碳化硅的方法，其具有对材料的上覆和/或下层介电层的选择性。 介电材料可以包括二氧化硅，氮氧化硅，氮化硅或包括有机低k材料的各种低k电介质材料。 蚀刻气体包括诸如Cl 2的含氯气体，诸如O 2的含氧气体和诸如Ar的载气。 为了实现对这种介电材料的期望的选择性，选择等离子体蚀刻气体化学物质以在较慢的速率蚀刻电介质材料时实现所需的碳化硅蚀刻速率。 该方法可用于选择性蚀刻氢化碳化硅蚀刻停止层或碳化硅衬底。

公开(公告)号：US08521461B2

公开(公告)日：2013-08-27

申请号：US13436705

申请日：2012-03-30

申请人： Iqbal A. Shareef ,  James V. Tietz ,  Vernon Wong ,  Richard J. Meinecke

发明人： Iqbal A. Shareef ,  James V. Tietz ,  Vernon Wong ,  Richard J. Meinecke

IPC分类号： G01F1/12

CPC分类号： G01F25/0053 ,  Y10T137/7722

摘要： A processing system for delivering a process gas to a reaction chamber using a recipe having a recipe flow rate is provided. The processing system includes a gas flow delivery system configured for delivering the process gas, wherein said gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one sensor. The processing system also includes a programmed computing device configured for applying a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.

摘要翻译： 提供了一种使用具有配方流量的食谱将处理气体输送到反应室的处理系统。 处理系统包括配置用于输送处理气体的气体流量输送系统，其中由质量流量控制器（MFC）控制到气孔的所述气体流量输送系统。 先前通过对气体进行加压来计算预测流量。 预先计算的预测流量通过至少一个传感器测量气体的一组上游压力值。 处理系统还包括编程计算装置，其被配置为施加一组校准因子的校准因子以确定预测流量，所述校准因子是该组上游压力值的平均值与一组的平均值的比率 的金上游压力值。

公开(公告)号：US6135859A

公开(公告)日：2000-10-24

申请号：US304014

申请日：1999-04-30

申请人： James V. Tietz

发明人： James V. Tietz

IPC分类号： B24B21/12 ,  B24B37/04 ,  B24D7/12 ,  B24B1/00

CPC分类号： B24B21/12 ,  B24B37/04 ,  B24D7/12

摘要： A chemical mechanical polishing apparatus has a platen, a polishing sheet extending between a first roller and a second roller, and a support sheet extending between a third roller and a fourth roller. A portion of the polishing sheet extends over a surface of the platen to polish a substrate, and a portion of the support sheet extends between the platen and the polishing sheet. The polishing sheet may be a continuous belt or a reel-to-reel tape, and the support sheet may be a continuous belt or reel-to-reel tape.

摘要翻译： 化学机械抛光装置具有压板，在第一辊和第二辊之间延伸的抛光片，以及在第三辊和第四辊之间延伸的支撑片。 抛光片的一部分在压板的表面上延伸以抛光衬底，并且支撑片的一部分在压板和抛光片之间延伸。 抛光片可以是连续带或卷对卷带，并且支撑片可以是连续的带或卷对卷带。

公开(公告)号：US6132295A

公开(公告)日：2000-10-17

申请号：US373096

申请日：1999-08-12

申请人： James V. Tietz ,  John M. White

发明人： James V. Tietz ,  John M. White

IPC分类号： B24B41/047 ,  B24B1/00 ,  B24B7/04 ,  B24B7/20 ,  B24B7/22 ,  B24B41/06 ,  H01L21/304

CPC分类号： B24B37/30 ,  B24B41/06 ,  B24B7/228

摘要： A semiconductor wafer fabrication apparatus includes a carrier head for holding a wafer and distributing a downward pressure across a back surface of the wafer. The apparatus also includes a wafer processing station disposed near the carrier head. The station includes a grinding wheel and a flat fluid bearing. The fluid bearing provides an upward pressure against a front surface of the wafer to substantially flatten the front surface of the wafer and conform it to the flatness of the bearing surface. The face of the wafer can move with very little friction across the bearing surface. The grinding wheel can be raised into contact with the front surface of the wafer and rotated to grind the front surface while the fluid bearing provides the upward pressure and the carrier head distributes the downward pressure. The technique can be used to planarize a wafer having one or more previously-formed layers despite variations in thickness of the wafer or warpage of the wafer.

摘要翻译： 半导体晶片制造装置包括用于保持晶片并且在晶片的后表面上分布向下的压力的载体头。 该设备还包括设置在承载头附近的晶片处理站。 该车站包括砂轮和扁平流体轴承。 流体轴承提供抵靠晶片前表面的向上压力，以使晶片的前表面基本平坦化，并使其符合轴承表面的平坦度。 晶片的表面可以以非常小的摩擦力在轴承表面上移动。 砂轮可以升高成与晶片的前表面接触并且旋转以研磨前表面，同时流体轴承提供向上的压力并且承载头分配向下的压力。 该技术可以用于平面化具有一个或多个预先形成的层的晶片，尽管晶片厚度的变化或晶片翘曲。

公开(公告)号：US5920797A

公开(公告)日：1999-07-06

申请号：US758699

申请日：1996-12-03

申请人： David S. Ballance ,  Benjamin Bierman ,  James V. Tietz ,  Brian Haas

发明人： David S. Ballance ,  Benjamin Bierman ,  James V. Tietz ,  Brian Haas

IPC分类号： H01L21/22 ,  H01L21/00 ,  H01L21/205 ,  H01L21/26 ,  H01L21/31 ,  H01L21/683

CPC分类号： H01L21/67115 ,  H01L21/6838 ,  Y10S438/909

摘要： A method of reducing stress on a substrate in a thermal processing chamber. The method includes the steps of supporting a first portion of a substrate by means of contacting the same such that a second portion of the substrate is not contacted, part of the second portion forming one wall of a cavity, and flowing a gas into the cavity such that the pressure of the gas exerts a force on the second portion to at least partially support the second portion.

摘要翻译： 一种降低热处理室中的衬底上的应力的方法。 该方法包括以下步骤：通过使基板的第一部分接触而支撑基板的第一部分，使得基板的第二部分不接触，形成空腔的一个壁的第二部分的一部分并将气体流入腔 使得气体的压力在第二部分上施加力以至少部分地支撑第二部分。

公开(公告)号：US5884412A

公开(公告)日：1999-03-23

申请号：US687166

申请日：1996-07-24

申请人： James V. Tietz ,  Benjamin Bierman ,  David S. Ballance

发明人： James V. Tietz ,  Benjamin Bierman ,  David S. Ballance

IPC分类号： C23C16/44 ,  C23C16/455 ,  F26B11/18

CPC分类号： C23C16/45521 ,  C23C16/455

摘要： A method of processing a disk-shaped substrate, or wafer, during a chemical vapor process includes a backside purge of the substrate with a purge gas. The backside purge is obtained by spinning the substrate about a central axis, directing a flow of the purge gas over the backside of the spinning substrate, and causing the purge gas to flow in an outward radial direction with the spinning substrate. An apparatus in a vapor processing system structured for conducting the backside purge includes a support mechanism structured and arranged to support the substrate and spin the substrate about a central axis, and a conduit coupled to a source of purge gas, structured and arranged to direct a flow of the purge gas over a backside of the substrate while the substrate is spinning such that the spinning substrate causes the purge gas to flow radially outward.

摘要翻译： 在化学蒸汽处理过程中处理盘形基板或晶片的方法包括用吹扫气体对基板进行背面吹扫。 背面吹扫是通过围绕中心轴线旋转衬底而获得的，该吹扫气体引导吹扫气体流过纺丝衬底的背面，并使吹扫气体与旋转衬底沿向外径向流动。 构造用于进行背面清洗的蒸气处理系统中的装置包括构造和布置成支撑基板并围绕中心轴线旋转基板的支撑机构，以及耦合到吹扫气体源的导管，其被构造和布置成引导 当衬底旋转时，吹扫气体在衬底的背面上流动，使得纺丝衬底使吹扫气体径向向外流动。

公开(公告)号：US20120247581A1

公开(公告)日：2012-10-04

申请号：US13436705

申请日：2012-03-30

申请人： Iqbal A. Shareef ,  James V. Tietz ,  Vermon Wong ,  Richard J. Meinecke

发明人： Iqbal A. Shareef ,  James V. Tietz ,  Vermon Wong ,  Richard J. Meinecke

IPC分类号： F16K21/00

CPC分类号： G01F25/0053 ,  Y10T137/7722

摘要： A processing system for delivering a process gas to a reaction chamber using a recipe having a recipe flow rate is provided. The processing system includes a gas flow delivery system configured for delivering the process gas, wherein said gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one sensor. The processing system also includes a programmed computing device configured for applying a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.

摘要翻译： 提供了一种使用具有配方流量的食谱将处理气体输送到反应室的处理系统。 处理系统包括配置用于输送处理气体的气体流量输送系统，其中由质量流量控制器（MFC）控制到气孔的所述气体流量输送系统。 先前通过对气体进行加压来计算预测流量。 预先计算的预测流量通过至少一个传感器测量气体的一组上游压力值。 处理系统还包括编程计算装置，其被配置为施加一组校准因子的校准因子以确定预测流量，所述校准因子是该组上游压力值的平均值与一组的平均值的比率 的金上游压力值。

公开(公告)号：US06302767B1

公开(公告)日：2001-10-16

申请号：US09660728

申请日：2000-09-13

申请人： James V. Tietz

发明人： James V. Tietz

IPC分类号： B24B100

CPC分类号： B24B21/12 ,  B24B37/04 ,  B24D7/12

摘要： A chemical mechanical polishing apparatus has a platen, a polishing sheet extending between a first roller and a second roller, and a support sheet extending between a third roller and a fourth roller. A portion of the polishing sheet extends over a surface of the platen to polish a substrate, and a portion of the support sheet extends between the platen and the polishing sheet. The polishing sheet may be a continuous belt or a reel-to-reel tape, and the support sheet may be a continuous belt or reel-to-reel tape.

摘要翻译： 化学机械抛光装置具有压板，在第一辊和第二辊之间延伸的抛光片，以及在第三辊和第四辊之间延伸的支撑片。 抛光片的一部分在压板的表面上延伸以抛光衬底，并且支撑片的一部分在压板和抛光片之间延伸。 抛光片可以是连续带或卷对卷带，并且支撑片可以是连续的带或卷对卷带。

公开(公告)号：US6157106A

公开(公告)日：2000-12-05

申请号：US879497

申请日：1997-05-16

申请人： James V. Tietz ,  Benjamin Bierman

发明人： James V. Tietz ,  Benjamin Bierman

IPC分类号： H01L21/205 ,  H01L21/00 ,  H01L21/26 ,  H01L21/687 ,  H02K7/09

CPC分类号： H01L21/68785 ,  F16C32/047 ,  H01L21/68792

摘要： Accomodations for a magnetically levitated rotating system in an RTP chamber are provided. The system includes a magnetically permeable rotor; a cylindrical thin wall concentric with and surrounding the rotor; and a magnetic stator assembly adjacent the cylindrical thin wall. The radial distance between the rotor and the magnetic stator assembly is small enough that a magnetic field created by the stator assembly magnetically levitates the rotor but is great enough that the rotor does not physically contact the thin wall upon thermal expansion. The system is such that the relative positions of a plurality of sensors which determine the position of a rotating frame is maintained upon dismantling. Thermal isolation of the area including the rotor is accomplished from the reactive gases in a processing area of the RTP chamber. The rotor may be cooled by a number of cooling chambers formed within the chamber.

摘要翻译： 提供了一个用于RTP室中的磁悬浮旋转系统的住宿。 该系统包括导磁转子; 与转子同心并围绕转子的圆柱形薄壁; 以及邻近圆柱形薄壁的磁性定子组件。 转子和磁性定子组件之间的径向距离足够小，使得由定子组件产生的磁场使转子磁悬浮，但足够大，使得转子在热膨胀时不与薄壁物理接触。 该系统使得在拆卸时保持确定旋转框架的位置的多个传感器的相对位置。 包括转子在内的区域的热隔离由RTP室的处理区域内的反应性气体完成。 转子可以由在室内形成的多个冷却室冷却。