Apparatus and method for grinding a semiconductor wafer surface
    1.
    发明授权
    Apparatus and method for grinding a semiconductor wafer surface 失效
    用于研磨半导体晶片表面的装置和方法

    公开(公告)号:US06273794B1

    公开(公告)日:2001-08-14

    申请号:US09642182

    申请日:2000-08-17

    IPC分类号: B24B100

    CPC分类号: B24B37/30 B24B7/228 B24B41/06

    摘要: A semiconductor wafer fabrication apparatus includes a carrier head for holding a wafer and distributing a downward pressure across a back surface of the wafer. The apparatus also includes a wafer processing station disposed near the carrier head. The station includes a grinding wheel and a flat fluid bearing. The fluid bearing provides an upward pressure against a front surface of the wafer to substantially flatten the front surface of the wafer and conform it to the flatness of the bearing surface. The face of the wafer can move with very little friction across the bearing surface. The grinding wheel can be raised into contact with the front surface of the wafer and rotated to grind the front surface while the fluid bearing provides the upward pressure and the carrier head distributes the downward pressure. The technique can be used to planarize a wafer having one or more previously-formed layers despite variations in thickness of the wafer or warpage of the wafer.

    摘要翻译: 半导体晶片制造装置包括用于保持晶片并且在晶片的后表面上分布向下的压力的载体头。 该设备还包括设置在承载头附近的晶片处理站。 该车站包括砂轮和扁平流体轴承。 流体轴承提供抵靠晶片前表面的向上压力,以使晶片的前表面基本平坦化,并使其符合轴承表面的平坦度。 晶片的表面可以以非常小的摩擦力在轴承表面上移动。 砂轮可以升高成与晶片的前表面接触并且旋转以研磨前表面,同时流体轴承提供向上的压力并且承载头分配向下的压力。 该技术可以用于平面化具有一个或多个预先形成的层的晶片,尽管晶片厚度的变化或晶片翘曲。

    Apparatus and method for grinding a semiconductor wafer surface
    2.
    发明授权
    Apparatus and method for grinding a semiconductor wafer surface 失效
    用于研磨半导体晶片表面的装置和方法

    公开(公告)号:US6132295A

    公开(公告)日:2000-10-17

    申请号:US373096

    申请日:1999-08-12

    CPC分类号: B24B37/30 B24B41/06 B24B7/228

    摘要: A semiconductor wafer fabrication apparatus includes a carrier head for holding a wafer and distributing a downward pressure across a back surface of the wafer. The apparatus also includes a wafer processing station disposed near the carrier head. The station includes a grinding wheel and a flat fluid bearing. The fluid bearing provides an upward pressure against a front surface of the wafer to substantially flatten the front surface of the wafer and conform it to the flatness of the bearing surface. The face of the wafer can move with very little friction across the bearing surface. The grinding wheel can be raised into contact with the front surface of the wafer and rotated to grind the front surface while the fluid bearing provides the upward pressure and the carrier head distributes the downward pressure. The technique can be used to planarize a wafer having one or more previously-formed layers despite variations in thickness of the wafer or warpage of the wafer.

    摘要翻译: 半导体晶片制造装置包括用于保持晶片并且在晶片的后表面上分布向下的压力的载体头。 该设备还包括设置在承载头附近的晶片处理站。 该车站包括砂轮和扁平流体轴承。 流体轴承提供抵靠晶片前表面的向上压力,以使晶片的前表面基本平坦化,并使其符合轴承表面的平坦度。 晶片的表面可以以非常小的摩擦力在轴承表面上移动。 砂轮可以升高成与晶片的前表面接触并且旋转以研磨前表面,同时流体轴承提供向上的压力并且承载头分配向下的压力。 该技术可以用于平面化具有一个或多个预先形成的层的晶片,尽管晶片厚度的变化或晶片翘曲。

    Tightly fitted ceramic insulator on large area electrode
    5.
    发明授权
    Tightly fitted ceramic insulator on large area electrode 有权
    在大面积电极上紧密配合陶瓷绝缘子

    公开(公告)号:US09068262B2

    公开(公告)日:2015-06-30

    申请号:US13110184

    申请日:2011-05-18

    摘要: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

    摘要翻译: 本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件,所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。 在一个实施例中,喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。 多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。 在其它实施例中,绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场,从而减少电弧电势。

    Detecting plasma chamber malfunction
    6.
    发明授权
    Detecting plasma chamber malfunction 有权
    检测等离子体室故障

    公开(公告)号:US08674844B2

    公开(公告)日:2014-03-18

    申请号:US12661699

    申请日:2010-03-19

    IPC分类号: G08B21/00

    摘要: Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber.

    摘要翻译: 通过观察等离子体室的操作状态并检测何时操作条件偏离由下限和上限限定的先前观察范围,来检测RF供电的等离子体室内部件的故障。 通过在紧邻等离子体室的最近清洁之前的一个或多个等离子体室清洁循环期间观察工件处理期间该操作条件的最小值和最大值来确定下限和上限。

    Guided Wave Applicator with Non-Gaseous Dielectric for Plasma Chamber
    8.
    发明申请
    Guided Wave Applicator with Non-Gaseous Dielectric for Plasma Chamber 有权
    用于等离子室的非气体介质的导波涂敷器

    公开(公告)号:US20130126331A1

    公开(公告)日:2013-05-23

    申请号:US13360652

    申请日:2012-01-27

    IPC分类号: H01P3/16 H05H1/46 H01L21/02

    摘要: A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.

    摘要翻译: 导波装置,其包括两个导电波导壁和波导电介质。 波导介质的体积由非气体电介质材料构成,并且位于两个波导壁之间。 波导电介质包括第一和第二纵向端部,并且包括在两个纵向端部之间纵向延伸的第一,第二,第三和第四侧面。 第一波导壁被定位成使得其覆盖波导电介质的第一侧,并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。 在操作中,可以向波导介质的一个或两个纵向端提供电力,由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

    Multi-electrode PECVD source
    9.
    发明授权
    Multi-electrode PECVD source 有权
    多电极PECVD源

    公开(公告)号:US08438990B2

    公开(公告)日:2013-05-14

    申请号:US12353638

    申请日:2009-01-14

    IPC分类号: C23C16/00 H01L21/00

    摘要: Embodiments of the present invention generally relate to methods and apparatus for plasma generation in plasma processes. The methods and apparatus generally include a plurality of electrodes. The electrodes are connected to a RF power source, which powers the electrodes out of phase from one another. Adjacent electrodes are electrically isolated from one another by electrically insulating members disposed between and coupled to the electrodes. Processing gas may be delivered and/or withdrawn through the electrodes and/or the electrically insulating members. The substrate may remain electrically floating because the plasma may be capacitively coupled to it through a differential RF source drive.

    摘要翻译: 本发明的实施例一般涉及等离子体工艺中等离子体产生的方法和装置。 所述方法和装置通常包括多个电极。 电极连接到RF电源,该电源使电极彼此相位不相位。 相邻的电极通过设置在电极之间并耦合到电极的电绝缘构件彼此电隔离。 处理气体可以通过电极和/或电绝缘构件传送和/或抽出。 由于等离子体可以通过差分RF源驱动电容耦合到其上,基板可能保持电浮置。

    Methods and apparatus for supporting substrates
    10.
    发明授权
    Methods and apparatus for supporting substrates 有权
    用于支撑基材的方法和装置

    公开(公告)号:US08365682B2

    公开(公告)日:2013-02-05

    申请号:US11140777

    申请日:2005-05-31

    IPC分类号: B65G49/07

    摘要: Substrate support methods and apparatus include vertically aligned lift pins that have bearing surfaces that engage friction plates and/or magnetic fields to maintain the vertical orientation of the lift pins during substrate lifting. In some embodiments, a magnetic field and/or weighting may alternatively or additionally be used to control the vertical orientation of the lift pins, limit the angle of the lift pins, and/or prevent the lift pins from unintentionally binding in a susceptor as the susceptor is raised and prevent the resulting uneven support of the substrate.

    摘要翻译: 衬底支撑方法和装置包括垂直对齐的提升销,其具有接合摩擦板和/或磁场的承载表面,以在衬垫提升期间保持提升销的垂直取向。 在一些实施例中,可以替代地或另外地使用磁场和/或加权来控制提升销的垂直定向,限制提升销的角度和/或防止提升销在基座中无意地结合,因为 感受器被升高并且防止由此产生的基板不均匀的支撑。