公开(公告)号：US07078312B1

公开(公告)日：2006-07-18

申请号：US10654113

申请日：2003-09-02

申请人： Siswanto Sutanto ,  Wenxian Zhu ,  Waikit Fung ,  Mayasari Lim ,  Vishal Gauri ,  George D. Papasouliotis

发明人： Siswanto Sutanto ,  Wenxian Zhu ,  Waikit Fung ,  Mayasari Lim ,  Vishal Gauri ,  George D. Papasouliotis

IPC分类号： H01L21/76

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/76224 ,  Y10S438/959

摘要： Plasma etch processes incorporating etch chemistries which include hydrogen. In particular, high density plasma chemical vapor deposition-etch-deposition processes incorporating etch chemistries which include hydrogen that can effectively fill high aspect ratio (typically at least 3:1, for example 6:1, and up to 10:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps while reducing or eliminating chamber loading and redeposition and improving wafer-to-wafer uniformity relative to conventional deposition-etch-deposition processes which do not incorporate hydrogen in their etch chemistries.

摘要翻译： 包括蚀刻化学的等离子体蚀刻工艺，其中包括氢。 特别地，结合蚀刻化学的高密度等离子体化学气相沉积 - 蚀刻沉积方法，其包括可以有效地填充高纵横比（通常至少3:1，例如6:1，最多10:1或更高）的氢， ，窄宽度（通常为0.13微米，例如0.1微米或更小）的间隙，同时相对于在其蚀刻中不掺入氢的常规沉积 - 蚀刻沉积工艺，减少或消除了室的负载和再沉积，并且提高了晶片到晶片的均匀性 化学品。

公开(公告)号：US07163896B1

公开(公告)日：2007-01-16

申请号：US10733858

申请日：2003-12-10

申请人： Wenxian Zhu ,  Jengyi Yu ,  Siswanto Sutanto ,  Pingsheng Sun ,  Jeffrey Chih-Hou Lowe ,  Waikit Fung ,  Tze Wing Poon

发明人： Wenxian Zhu ,  Jengyi Yu ,  Siswanto Sutanto ,  Pingsheng Sun ,  Jeffrey Chih-Hou Lowe ,  Waikit Fung ,  Tze Wing Poon

IPC分类号： H01L21/311

CPC分类号： H01L21/31612 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31608

摘要： Biased plasma etch processes incorporating H2 etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.

摘要翻译： 掺杂H 2 O 3蚀刻化学品的偏置等离子体蚀刻工艺。 特别地，结合蚀刻化学的高密度等离子体化学气相蚀刻增强（沉积 - 蚀刻 - 沉积）间隙填充工艺，其中引入氢作为蚀刻剂，其可以有效地填充高纵横比间隙，同时减少或消除蚀刻剂化学物质的电介质污染。

公开(公告)号：US07476621B1

公开(公告)日：2009-01-13

申请号：US11366220

申请日：2006-03-01

申请人： Minh Anh Nguyen ,  Chi-I Lang ,  Wenxian Zhu ,  Judy H. Huang

发明人： Minh Anh Nguyen ,  Chi-I Lang ,  Wenxian Zhu ,  Judy H. Huang

IPC分类号： H01L21/311

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/31612

摘要： Plasma etch processes incorporating H2/Noble gas etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen and one or more Noble gases as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.

摘要翻译： 掺杂H2 / Noble气蚀刻化学物质的等离子体蚀刻工艺。 特别地，高密度等离子体化学气相蚀刻增强（沉积 - 蚀刻 - 沉积）间隙填充工艺结合蚀刻化学，其结合氢气和一种或多种贵重气体作为蚀刻剂，其可以有效地填补高纵横比间隙，同时减少或消除介电污染 通过蚀刻剂化学物种。

公开(公告)号：US07211525B1

公开(公告)日：2007-05-01

申请号：US11082369

申请日：2005-03-16

申请人： Sunil Shanker ,  Sean Cox ,  Chi-I Lang ,  Judy H. Huang ,  Minh Anh Nguyen ,  Ken Vo ,  Wenxian Zhu

发明人： Sunil Shanker ,  Sean Cox ,  Chi-I Lang ,  Judy H. Huang ,  Minh Anh Nguyen ,  Ken Vo ,  Wenxian Zhu

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/0245 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/76224 ,  H01L21/76837

摘要： Methods of filling gaps on semiconductor substrates with dielectric film are described. The methods reduce or eliminate sidewall deposition and top-hat formation. The methods also reduce or eliminate the need for etch steps during dielectric film deposition. The methods include treating a semiconductor substrate with a hydrogen plasma before depositing dielectric film on the substrate. In some embodiments, the hydrogen treatment is used is conjunction with a high rate deposition process.

摘要翻译： 描述了用绝缘膜填充半导体衬底上的间隙的方法。 该方法减少或消除侧壁沉积和顶帽形成。 在电介质膜沉积期间，这些方法还减少或消除了蚀刻步骤的需要。 所述方法包括在沉积介质膜之前用氢等离子体处理半导体衬底。 在一些实施方案中，使用氢处理与高速沉积工艺相结合。

公开(公告)号：US07344996B1

公开(公告)日：2008-03-18

申请号：US11159834

申请日：2005-06-22

申请人： Chi-I Lang ,  Wenxian Zhu ,  Ratsamee Limdulpaiboon ,  Judy H. Huang

发明人： Chi-I Lang ,  Wenxian Zhu ,  Ratsamee Limdulpaiboon ,  Judy H. Huang

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76837 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31608

摘要： Plasma etch processes incorporating helium-based etch chemistries can remove dielectric a semiconductor applications. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate helium as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.

摘要翻译： 掺入氦基蚀刻化学品的等离子体蚀刻工艺可以消除半导体应用的电介质。 特别地，高密度等离子体化学气相蚀刻增强（沉积 - 蚀刻 - 沉积）间隙填充工艺，其结合了氦气作为蚀刻剂的蚀刻化学物质，其可以有效地填充高纵横比间隙，同时减少或消除蚀刻剂化学物质的电介质污染。

公开(公告)号：US06844612B1

公开(公告)日：2005-01-18

申请号：US10426643

申请日：2003-04-29

申请人： Jason Tian ,  Wenxian Zhu ,  M. Ziaul Karim ,  Cong Do

发明人： Jason Tian ,  Wenxian Zhu ,  M. Ziaul Karim ,  Cong Do

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L23/58

CPC分类号： H01L21/76801 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3141 ,  H01L21/31629 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A fluorine-doped silica glass (FSG) dielectric layer includes a number of sublayers. Each sublayer is doped with fluorine in such a way that the doping concentration of fluorine in the sublayer decreases as one moves from an interior region of the sublayer towards one or both of the interfaces between the sublayer and adjacent sublayers. This structure reduces the generation of HF when the layer is exposed to moisture and thereby improves the stability and adhesion properties of the layer. The principles of this invention can also be applied to dielectric layers doped with such other dopants as boron, phosphorus or carbon.

摘要翻译： 氟掺杂石英玻璃（FSG）介电层包括多个子层。 每个子层掺杂氟，使得子层中氟的掺杂浓度随着从子层的内部区域朝向子层和相邻子层之间的一个或两个界面移动而减小。 当该层暴露于水分时，该结构减少HF的产生，从而提高该层的稳定性和粘附性。 本发明的原理也可以应用于掺杂有诸如硼，磷或碳的其它掺杂剂的电介质层。

公开(公告)号：US06452129B1

公开(公告)日：2002-09-17

申请号：US09717487

申请日：2000-11-20

申请人： Wenxian Zhu ,  Richard C. Eschenbach ,  Robin A. Lampson ,  John R. Sparkes

发明人： Wenxian Zhu ,  Richard C. Eschenbach ,  Robin A. Lampson ,  John R. Sparkes

IPC分类号： B23K1000

CPC分类号： H05H1/34 ,  H05H2001/3457 ,  H05H2001/3473

摘要： A plasma arc torch is disclosed which has an elongated electrode with an open front and a nozzle with a plasma discharge opening that is coaxial with the electrode. A mounting arrangement includes a ceramic ring that engages the front end of the electrode and a gas ring which concentrically surrounds the ceramic ring. A forward portion of the gas ring, the forward end of the electrode, and the nozzle define a swirl chamber of the torch, and opposing, spaced-apart concentric cylindrical surfaces of the ceramic ring and the gas ring, respectively, form an annulus which extends rearwardly from the swirl chamber. The ceramic ring closes the aft end of the annulus, and the gas ring houses a plurality of plasma gas injection ports which are located immediately forward of the aft end of the annulus. The entire plasma gas for the torch flows from the injection ports generally tangentially into the annulus to prevent a recirculation of gas into the annulus and to impart rotation to the gas after it leaves the ports and as it propagates towards the swirl chamber. The annulus is sufficiently long so that the injected gas spirals through about 5-20 revolutions before it enters the swirl chamber as a substantially uniform, single mass gas flow.

摘要翻译： 公开了一种等离子弧焊炬，其具有带有开口前部的细长电极和具有与电极同轴的等离子体放电开口的喷嘴。 安装装置包括接合电极前端的陶瓷环和同心地围绕陶瓷环的气环。 气体环的前部，电极的前端和喷嘴限定了割炬的旋转室，并且陶瓷环和气体环的相对的间隔开的同心圆柱形表面分别形成环形， 从漩涡室向后延伸。 陶瓷环关闭环形空间的后端，并且气环容纳多个等离子体气体注入口，这些等离子体气体注入口紧邻环形空间的后端的前方。 用于割炬的整个等离子体气体从喷射口大致切向地流入环形空间，以防止气体再循环到环形空间中，并且在气体离开端口之后并且当其朝向涡流室传播时，赋予气体旋转。 环形空间足够长，使得注入的气体在进入涡流室之前以大约5-20转的速度螺旋形成大致均匀的单质量气体流。