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17 条记录 (耗时 0.024 秒)

    Method for controlling etch process repeatability
    1.
    发明授权
    Method for controlling etch process repeatability 有权
    控制蚀刻工艺重复性的方法

    公开(公告)号：US07078312B1

    公开(公告)日：2006-07-18

    申请号：US10654113

    申请日：2003-09-02

    申请人： Siswanto Sutanto ,  Wenxian Zhu ,  Waikit Fung ,  Mayasari Lim ,  Vishal Gauri ,  George D. Papasouliotis

    发明人： Siswanto Sutanto ,  Wenxian Zhu ,  Waikit Fung ,  Mayasari Lim ,  Vishal Gauri ,  George D. Papasouliotis

    IPC分类号： H01L21/76

    CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/76224 ,  Y10S438/959

    摘要： Plasma etch processes incorporating etch chemistries which include hydrogen. In particular, high density plasma chemical vapor deposition-etch-deposition processes incorporating etch chemistries which include hydrogen that can effectively fill high aspect ratio (typically at least 3:1, for example 6:1, and up to 10:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps while reducing or eliminating chamber loading and redeposition and improving wafer-to-wafer uniformity relative to conventional deposition-etch-deposition processes which do not incorporate hydrogen in their etch chemistries.

    摘要翻译： 包括蚀刻化学的等离子体蚀刻工艺，其中包括氢。 特别地，结合蚀刻化学的高密度等离子体化学气相沉积 - 蚀刻沉积方法，其包括可以有效地填充高纵横比（通常至少3:1，例如6:1，最多10:1或更高）的氢， ，窄宽度（通常为0.13微米，例如0.1微米或更小）的间隙，同时相对于在其蚀刻中不掺入氢的常规沉积 - 蚀刻沉积工艺，减少或消除了室的负载和再沉积，并且提高了晶片到晶片的均匀性 化学品。

    Process modulation to prevent structure erosion during gap fill
    2.
    发明授权
    Process modulation to prevent structure erosion during gap fill 有权
    过程调制以防止间隙填充期间的结构侵蚀

    公开(公告)号：US07217658B1

    公开(公告)日：2007-05-15

    申请号：US10935909

    申请日：2004-09-07

    申请人： Atiye Bayman ,  George D. Papasouliotis ,  Yong Ling ,  Weijie Zhang ,  Vishal Gauri ,  Mayasari Lim

    发明人： Atiye Bayman ,  George D. Papasouliotis ,  Yong Ling ,  Weijie Zhang ,  Vishal Gauri ,  Mayasari Lim

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76837 ,  C23C16/045 ,  C23C16/402 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/31633

    摘要： High density plasma chemical vapor deposition and etch back processes fill high aspect ratio gaps without liner erosion or further underlying structure attack. The characteristics of the deposition process are modulated such that the deposition component of the process initially dominates the sputter component of the process. For example, reactive gasses are introduced in a gradient fashion into the HDP reactor and introduction of bias power onto the substrate is delayed and gradually increased or reactor pressure is decreased. In the case of a multi-step etch enhanced gap fill process, the invention may involve gradually modulating deposition and etch components during transitions between process steps. By carefully controlling the transitions between process steps, including the introduction of reactive species into the HDP reactor and the application of source and bias power onto the substrate, structure erosion is prevented.

    摘要翻译： 高密度等离子体化学气相沉积和回蚀工艺可以填充高纵横比间隙，无需衬垫侵蚀或进一步的基础结构攻击。 调制沉积工艺的特性使得该工艺的沉积组分最初主导该工艺的溅射部件。 例如，反应性气体以梯度方式引入HDP反应器中，并且将偏置功率引入到衬底上被延迟并逐渐增加或反应器压力降低。 在多步骤蚀刻增强的间隙填充工艺的情况下，本发明可以涉及在工艺步骤之间的过渡期间逐渐调制沉积和蚀刻部件。 通过仔细控制工艺步骤之间的转变，包括将活性物质引入HDP反应器中，以及将源和偏置功率施加到衬底上，防止结构侵蚀。

    Deposition profile modification through process chemistry
    3.
    发明授权
    Deposition profile modification through process chemistry 有权
    沉积型材通过工艺化学修饰

    公开(公告)号：US07122485B1

    公开(公告)日：2006-10-17

    申请号：US10316987

    申请日：2002-12-09

    申请人： George D. Papasouliotis ,  Edith Goldner ,  Vishal Gauri ,  Md Sazzadur Rahman ,  Vikram Singh

    发明人： George D. Papasouliotis ,  Edith Goldner ,  Vishal Gauri ,  Md Sazzadur Rahman ,  Vikram Singh

    IPC分类号： H01L21/31

    CPC分类号： C23C16/401 ,  C23C16/45523 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612

    摘要： Disclosed are methods for modifying the topography of HDP CVD films by modifying the composition of the reactive mixture. The methods allow for deposition profile control independent of film deposition rate. They rely on changes in the process chemistry of the HDP CVD system, rather than hardware modifications, to modify the local deposition rates on the wafer. The invention provides methods of modifying the film profile by altering the composition of the reactive gas mixture, in particular the hydrogen content. In this manner, deposition profile and wiw uniformity are decoupled from deposition rate, and can be controlled without hardware modifications.

    摘要翻译： 公开了通过改变反应性混合物的组成来改变HDP CVD膜的形貌的方法。 该方法允许独立于膜沉积速率的沉积轮廓控制。 它们依赖于HDP CVD系统的工艺化学变化，而不是硬件修改，以修改晶片上的局部沉积速率。 本发明提供了通过改变反应气体混合物的组成，特别是氢含量来改变膜分布的方法。 以这种方式，沉积轮廓和均匀性与沉积速率分离，并且可以在没有硬件修改的情况下被控制。

    Multi-step deposition and etch back gap fill process
    6.
    发明授权
    Multi-step deposition and etch back gap fill process 有权
    多步沉积和回蚀刻间隙填充过程

    公开(公告)号：US06867086B1

    公开(公告)日：2005-03-15

    申请号：US10389164

    申请日：2003-03-13

    申请人： David Chen ,  Robert A. Shepherd, Jr. ,  Vishal Gauri ,  George D. Papasouliotis

    发明人： David Chen ,  Robert A. Shepherd, Jr. ,  Vishal Gauri ,  George D. Papasouliotis

    IPC分类号： C23C16/04 ,  C23C16/40 ,  H01L21/311 ,  H01L21/316 ,  H01L21/762 ,  H01L21/338 ,  H01L21/31 ,  H01L21/336 ,  H01L21/76 ,  H01L21/439

    CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/402 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/76224

    摘要： High density plasma chemical vapor deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots are provided. This deposition part of the process may involve the use of any suitable high density plasma chemical vapor deposition (HDP CVD) chemistry. The etch back part of the process involves an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality gap fill operations.

    摘要翻译： 高密度等离子体化学气相沉积和回蚀工艺，其可以填充高纵横比（通常至少5:1，例如6:1），窄宽度（通常小于0.13微米，例如0.1微米或更小）的间隙，显着降低 提供了空隙或弱点的发生。 该方法的该沉积部分可以涉及使用任何合适的高密度等离子体化学气相沉积（HDP CVD）化学。 该方法的回蚀部分涉及包括各向异性干蚀刻以及各向同性干法蚀刻的集成多步骤（例如两步）程序。 在单一工具中的全部干沉积和回蚀工艺增加了生产量并减少了晶片的处理，从而产生了更有效和更高质量的间隙填充操作。

    Flowable film dielectric gap fill process
    8.
    发明授权
    Flowable film dielectric gap fill process 有权
    可流动薄膜电介质间隙填充工艺

    公开(公告)号：US07524735B1

    公开(公告)日：2009-04-28

    申请号：US11447594

    申请日：2006-06-05

    申请人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

    发明人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

    IPC分类号： H01L21/762

    CPC分类号： H01L21/31 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31608 ,  H01L21/76224

    摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

    摘要翻译： 本发明的方法涉及通过在间隙中形成可流动的膜来填充具有固体电介质材料的衬底上的间隙。 可流动膜提供一致的，无空隙的间隙填充。 然后将膜转化成固体电介质材料。 以这种方式，用固体电介质材料填充衬底上的间隙。 根据各种实施方案，所述方法包括使电介质前体与氧化剂反应以形成电介质材料。 在某些实施方案中，电介质前体冷凝并随后与氧化剂反应以形成电介质材料。 在某些实施方案中，气相反应物反应形成冷凝的可流动的膜。

    Flowable film dielectric gap fill process
    9.
    发明授权
    Flowable film dielectric gap fill process 有权
    可流动薄膜电介质间隙填充工艺

    公开(公告)号：US07888233B1

    公开(公告)日：2011-02-15

    申请号：US12411243

    申请日：2009-03-25

    申请人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

    发明人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

    IPC分类号： H01L21/4757

    CPC分类号： H01L21/31 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31608 ,  H01L21/76224

    摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

    摘要翻译： 本发明的方法涉及通过在间隙中形成可流动的膜来填充具有固体电介质材料的衬底上的间隙。 可流动膜提供一致的，无空隙的间隙填充。 然后将膜转化成固体电介质材料。 以这种方式，用固体电介质材料填充衬底上的间隙。 根据各种实施方案，所述方法包括使电介质前体与氧化剂反应以形成电介质材料。 在某些实施方案中，电介质前体冷凝并随后与氧化剂反应以形成电介质材料。 在某些实施方案中，气相反应物反应形成冷凝的可流动的膜。