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![Method of manufacturing a semiconductor device containing a PbxSr(1-x)[Zr,Ti]xRu(1-x)O3 film in a capacitor](/abs-image/US/2009/05/12/US07531408B2/abs.jpg.150x150.jpg)
1.发明授权Method of manufacturing a semiconductor device containing a PbxSr(1-x)[Zr,Ti]xRu(1-x)O3 film in a capacitor 失效在电容器中制造含有PbxSr（1-x）[Zr，Ti] xRu（1-x）O3膜的半导体器件的制造方法公开(公告)号：US07531408B2
公开(公告)日：2009-05-12
申请号：US11754022
申请日：2007-05-25
申请人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
发明人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
IPC分类号： H01L21/8234
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02266 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A method of manufacturing a semiconductor device, including forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O. Forming the capacitor includes forming a crystallized film which contains Pb, Sr, Zr, Ti, Ru and O.
摘要翻译： 一种半导体器件的制造方法，包括在半导体衬底上形成电容器，所述电容器包括含有Pb，Zr，Ti和O的电介质膜。形成所述电容器包括形成含有Pb，Sr，Zr，Ti， 汝和O.
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公开(公告)号：US20050051823A1
公开(公告)日：2005-03-10
申请号：US10833096
申请日：2004-04-28
申请人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
发明人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
IPC分类号： H01L27/105 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8246 , H01L27/115 , H01L21/00 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L31/062
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02266 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and including a film which contains Pb, Sr, Zr, Ti, Ru and O and a dielectric film which contains Pb, Zr, Ti and O and which is provided on the film containing Pb, Sr, Zr, Ti, Ru and O.
摘要翻译： 公开了一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且包括含有Pb，Sr，Zr，Ti，Ru和O的膜和包含Pb，Zr，Ti和O的电介质膜， 提供在含有Pb，Sr，Zr，Ti，Ru和O的膜上
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公开(公告)号：US07564089B2
公开(公告)日：2009-07-21
申请号：US10911501
申请日：2004-08-05
申请人： Soichi Yamazaki , Katsuaki Natori , Koji Yamakawa
发明人： Soichi Yamazaki , Katsuaki Natori , Koji Yamakawa
IPC分类号： H01L27/108
CPC分类号： H01L27/11507 , H01L27/0207 , H01L27/10852 , H01L27/11502 , H01L28/55 , H01L28/60
摘要： There is disclosed a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate, and including a bottom electrode, a dielectric film formed on the bottom electrode, and a top electrode formed on the dielectric film and having a plurality of hole patterns.
摘要翻译： 公开了一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且包括底部电极，形成在底部电极上的电介质膜和形成在电介质膜上并具有多个孔的顶部电极 模式。
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![Semiconductor device contains a PbxSr(1−x)[Zr, Ti]xRu(1−x)O3 film in a capacitor](/abs-image/US/2007/06/19/US07233040B2/abs.jpg.150x150.jpg)
4.发明授权Semiconductor device contains a PbxSr(1−x)[Zr, Ti]xRu(1−x)O3 film in a capacitor 失效半导体装置在电容器中含有PbxSr（1-x）[Zr，Ti] xRu（1-x）O3膜公开(公告)号：US07233040B2
公开(公告)日：2007-06-19
申请号：US10833096
申请日：2004-04-28
申请人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
发明人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02266 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and including a film which contains Pb, Sr, Zr, Ti, Ru and O and a dielectric film which contains Pb, Zr, Ti and O and which is provided on the film containing Pb, Sr, Zr, Ti, Ru and O.
摘要翻译： 公开了一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且包括含有Pb，Sr，Zr，Ti，Ru和O的膜和包含Pb，Zr，Ti和O的电介质膜， 提供在含有Pb，Sr，Zr，Ti，Ru和O的膜上
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公开(公告)号：US20050070043A1
公开(公告)日：2005-03-31
申请号：US10673247
申请日：2003-09-30
申请人： Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Osamu Arisumi , Hiroshi Itokawa , Hiroyuki Kanaya , Kazuhiro Tomioka , Keisuke Nakazawa , Yasuyuki Taniguchi , Uli Egger
发明人： Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Osamu Arisumi , Hiroshi Itokawa , Hiroyuki Kanaya , Kazuhiro Tomioka , Keisuke Nakazawa , Yasuyuki Taniguchi , Uli Egger
IPC分类号： B23Q3/157 , H01L21/00 , H01L21/02 , H01L21/033 , H01L21/311
CPC分类号： H01L28/55 , H01L21/0332 , H01L21/31122 , H01L21/31144 , H01L28/65
摘要： The present invention provides a method for manufacturing a semiconductor device equipped with a capacitor in which a dielectric film is used, wherein a complex oxide is used as a mask material when the dielectric film is etched.
摘要翻译： 本发明提供了一种制造半导体器件的方法，所述半导体器件配备有使用电介质膜的电容器，其中当蚀刻所述电介质膜时，使用复合氧化物作为掩模材料。
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公开(公告)号：US20050230728A1
公开(公告)日：2005-10-20
申请号：US11107890
申请日：2005-04-18
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8246 , H01L23/522 , H01L27/115 , H01L31/113
CPC分类号： H01L27/11502 , H01L23/5223 , H01L27/11507 , H01L28/57 , H01L28/65 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to an aspect of the present invention comprises a semiconductor substrate, a ferroelectric capacitor, a protective film and an auxiliary capacitor. The ferroelectric capacitor is provided above the semiconductor substrate and comprises an upper electrode, a lower electrode and a ferroelectric film interposed between the upper and lower electrodes. The protective film is formed, covering the ferroelectric capacitor. The auxiliary capacitor is provided in a circuit section peripheral to the ferroelectric capacitor and uses the protective film as capacitor insulating film.
摘要翻译： 根据本发明的一个方面的半导体器件包括半导体衬底，铁电电容器，保护膜和辅助电容器。 铁电电容器设置在半导体衬底上方，并且包括插入在上电极和下电极之间的上电极，下电极和铁电体膜。 形成保护膜，覆盖铁电电容器。 辅助电容器设置在铁电电容器外围的电路部分中，并且使用保护膜作为电容器绝缘膜。
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公开(公告)号：US07501675B2
公开(公告)日：2009-03-10
申请号：US11107890
申请日：2005-04-18
IPC分类号： H01L27/108
CPC分类号： H01L27/11502 , H01L23/5223 , H01L27/11507 , H01L28/57 , H01L28/65 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to an aspect of the present invention comprises a semiconductor substrate, a ferroelectric capacitor, a protective film and an auxiliary capacitor. The ferroelectric capacitor is provided above the semiconductor substrate and comprises an upper electrode, a lower electrode and a ferroelectric film interposed between the upper and lower electrodes. The protective film is formed, covering the ferroelectric capacitor. The auxiliary capacitor is provided in a circuit section peripheral to the ferroelectric capacitor and uses the protective film as capacitor insulating film.
摘要翻译： 根据本发明的一个方面的半导体器件包括半导体衬底，铁电电容器，保护膜和辅助电容器。 铁电电容器设置在半导体衬底上方，并且包括插入在上电极和下电极之间的上电极，下电极和铁电体膜。 形成保护膜，覆盖铁电电容器。 辅助电容器设置在铁电电容器外围的电路部分中，并且使用保护膜作为电容器绝缘膜。
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公开(公告)号：US20070231948A1
公开(公告)日：2007-10-04
申请号：US11754022
申请日：2007-05-25
申请人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
发明人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02266 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A method of manufacturing a semiconductor device, including forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O. Forming the capacitor includes forming a crystallized film which contains Pb, Sr, Zr, Ti, Ru and O.
摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底上形成电容器，所述电容器包括含有Pb，Zr，Ti和O的电介质膜。形成所述电容器包括形成含有Pb，Sr，Zr，Ti， 汝和O.
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公开(公告)号：US20050212028A1
公开(公告)日：2005-09-29
申请号：US10911501
申请日：2004-08-05
申请人： Soichi Yamazaki , Katsuaki Natori , Koji Yamakawa
发明人： Soichi Yamazaki , Katsuaki Natori , Koji Yamakawa
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/02 , H01L27/105 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11507 , H01L27/0207 , H01L27/10852 , H01L27/11502 , H01L28/55 , H01L28/60
摘要： There is disclosed a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate, and including a bottom electrode, a dielectric film formed on the bottom electrode, and a top electrode formed on the dielectric film and having a plurality of hole patterns.
摘要翻译： 公开了一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且包括底部电极，形成在底部电极上的电介质膜和形成在电介质膜上并具有多个孔的顶部电极 模式。
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公开(公告)号：US08741161B2
公开(公告)日：2014-06-03
申请号：US13428535
申请日：2012-03-23
申请人： Yasuyuki Sonoda , Kyoichi Suguro , Masatoshi Yoshikawa , Koji Yamakawa , Katsuaki Natori , Daisuke Ikeno
发明人： Yasuyuki Sonoda , Kyoichi Suguro , Masatoshi Yoshikawa , Koji Yamakawa , Katsuaki Natori , Daisuke Ikeno
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a pillar on a base layer, forming a insulating layer on the base layer to cover the pillar by using GCIB method, where a lowermost portion of an upper surface of the insulating layer is lower than an upper surface of the pillar, and polishing the insulating layer and the pillar to expose a head of the pillar by using CMP method, where an end point of the polishing is the lowermost portion of the upper surface of the insulating layer.
摘要翻译： 根据一个实施方案，一种制造半导体器件的方法，该方法包括在基底层上形成柱，在基底层上形成绝缘层以通过GCIB法覆盖柱，其中上表面的最下部分 绝缘层低于柱的上表面，并且通过使用CMP方法研磨绝缘层和柱以露出柱的头部，其中抛光的终点是上表面的最下部 绝缘层。
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