RECONSTRUCTION OF FREQUENCY REGISTRATION FOR QUANTITATIVE SPECTROSCOPY
    1.
    发明申请
    RECONSTRUCTION OF FREQUENCY REGISTRATION FOR QUANTITATIVE SPECTROSCOPY 审中-公开
    重新定量频谱注册

    公开(公告)号:US20170059477A1

    公开(公告)日:2017-03-02

    申请号:US15227876

    申请日:2016-08-03

    Abstract: Frequency registration deviations occurring during a scan of a frequency or wavelength range by a spectroscopic analysis system can be corrected using passive and/or active approaches. A passive approach can include determining and applying mathematical conversions to a recorded field spectrum. An active approach can include modifying one or more operating parameters of the spectroscopic analysis system to reduce frequency registration deviation.

    Abstract translation: 通过光谱分析系统在频率或波长范围的扫描期间发生的频率对准偏差可以使用无源和/或主动方法进行校正。 被动方法可以包括确定并应用数学转换到记录的场谱。 主动方法可以包括修改光谱分析系统的一个或多个操作参数以减少频率对准偏差。

    Solderless Mounting for Semiconductor Lasers
    5.
    发明申请
    Solderless Mounting for Semiconductor Lasers 有权
    半导体激光器的无焊接安装

    公开(公告)号:US20160111393A1

    公开(公告)日:2016-04-21

    申请号:US14885931

    申请日:2015-10-16

    Abstract: A first contact surface of a semiconductor laser chip can be formed to a first target surface roughness and a second contact surface of a carrier mounting can be formed to a second target surface roughness. A first bond preparation layer comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer comprising a second metal can optionally be applied to the formed second contact surface. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.

    Abstract translation: 可以将半导体激光器芯片的第一接触表面形成为第一目标表面粗糙度,并且可以将载体安装的第二接触表面形成为第二目标表面粗糙度。 包含第一金属的第一粘合制备层可以任选地施加到所形成的第一接触表面,并且包括第二金属的第二接合制备层可任选地施加到形成的第二接触表面。 第一接触表面可以与第二接触表面接触,并且无焊接固定工艺可以将半导体激光器芯片固定到载体安装。 还描述了相关系统,方法,制品等。

    SEMICONDUCTOR LASER MOUNTING WITH INTACT DIFFUSION BARRIER LAYER

    公开(公告)号:US20200185880A1

    公开(公告)日:2020-06-11

    申请号:US16259172

    申请日:2019-01-28

    Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

    OPTICAL REFLECTORS FOR SPECTROMETER GAS CELLS

    公开(公告)号:US20190162597A9

    公开(公告)日:2019-05-30

    申请号:US14494482

    申请日:2014-09-23

    Abstract: A spectrometer cell can include a spacer, at least one end cap, and at least one mirror with a reflective surface. The end cap can be positioned proximate to a first contact end of the spacer such that the end cap and spacer at least partially enclose an internal volume of the spectrometer cell. The mirror can be secured in place by a mechanical attachment that includes attachment materials that are chemically inert to at least one reactive gas compound. The mechanical attachment can hold an optical axis of the reflective surface in a fixed orientation relative to other components of the spectrometer cell and or a spectrometer device that comprises the spectrometer cell. The mirror can optionally be constructed of a material such as stainless steel, ceramic, or the like. Related methods, articles of manufacture, systems, and the like are described.

    OPTICAL REFLECTORS FOR SPECTROMETER GAS CELLS
    9.
    发明申请
    OPTICAL REFLECTORS FOR SPECTROMETER GAS CELLS 审中-公开
    用于光谱仪气体细胞的光反射器

    公开(公告)号:US20160084710A1

    公开(公告)日:2016-03-24

    申请号:US14494482

    申请日:2014-09-23

    CPC classification number: G01N21/031 G01N2021/399

    Abstract: A spectrometer cell can include a spacer, at least one end cap, and at least one mirror with a reflective surface. The end cap can be positioned proximate to a first contact end of the spacer such that the end cap and spacer at least partially enclose an internal volume of the spectrometer cell. The mirror can be secured in place by a mechanical attachment that includes attachment materials that are chemically inert to at least one reactive gas compound. The mechanical attachment can hold an optical axis of the reflective surface in a fixed orientation relative to other components of the spectrometer cell and or a spectrometer device that comprises the spectrometer cell. The mirror can optionally be constructed of a material such as stainless steel, ceramic, or the like. Related methods, articles of manufacture, systems, and the like are described.

    Abstract translation: 光谱仪单元可以包括间隔物,至少一个端盖和至少一个具有反射表面的反射镜。 端盖可以定位成靠近隔离物的第一接触端,使得端盖和间隔件至少部分地包围光谱仪单元的内部体积。 镜子可以通过机械附件固定在适当的位置,该机械附件包括对至少一种反应性气体化合物具有化学惰性的附着材料。 机械附件可以将反射表面的光轴相对于分光计单元的其他部件和包括光谱仪单元的光谱仪装置固定在一定方向。 镜子可以任意地由诸如不锈钢,陶瓷等的材料构成。 描述了相关方法,制品,系统等。

    Semiconductor laser mounting with intact diffusion barrier layer

    公开(公告)号:US10224693B2

    公开(公告)日:2019-03-05

    申请号:US15652177

    申请日:2017-07-17

    Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

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