公开(公告)号：US20200185880A1

公开(公告)日：2020-06-11

申请号：US16259172

申请日：2019-01-28

Applicant: SpectraSensors, Inc.

Inventor： Alfred Feitisch ,  Gabi Neubauer ,  Mathias Schrempel

IPC: H01S5/022 ,  H01S5/068 ,  G01N21/39

Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

公开(公告)号：US20170317468A1

公开(公告)日：2017-11-02

申请号：US15652177

申请日：2017-07-17

Applicant: SpectraSensors, Inc.

Inventor： Alfred Feitisch ,  Gabi Neubauer ,  Mathias Schrempel

IPC: H01S5/022 ,  H01L23/00 ,  H01S5/042

CPC classification number: H01S5/02272 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/0383 ,  H01L2224/04026 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05663 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/0568 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/32245 ,  H01L2224/83801 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01S5/02212 ,  H01S5/0425 ,  H01L2924/04941 ,  H01L2924/01022 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/00

Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

公开(公告)号：US20160111393A1

公开(公告)日：2016-04-21

申请号：US14885931

申请日：2015-10-16

Applicant: SpectraSensors, Inc.

Inventor： Alfred Feitisch ,  Gabi Neubauer ,  Mathias Schrempel

IPC: H01L23/00 ,  H01S5/022

CPC classification number: H01L24/83 ,  B23K20/023 ,  B23K20/24 ,  B23K2101/42 ,  H01L33/62 ,  H01L2224/73265 ,  H01L2224/83201 ,  H01L2224/8385 ,  H01L2924/12042 ,  H01S5/02212 ,  H01S5/02256 ,  H01S5/0226 ,  H01S5/02264 ,  H01S5/02476 ,  H01S5/0425

Abstract: A first contact surface of a semiconductor laser chip can be formed to a first target surface roughness and a second contact surface of a carrier mounting can be formed to a second target surface roughness. A first bond preparation layer comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer comprising a second metal can optionally be applied to the formed second contact surface. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.

Abstract translation: 可以将半导体激光器芯片的第一接触表面形成为第一目标表面粗糙度，并且可以将载体安装的第二接触表面形成为第二目标表面粗糙度。 包含第一金属的第一粘合制备层可以任选地施加到所形成的第一接触表面，并且包括第二金属的第二接合制备层可任选地施加到形成的第二接触表面。 第一接触表面可以与第二接触表面接触，并且无焊接固定工艺可以将半导体激光器芯片固定到载体安装。 还描述了相关系统，方法，制品等。

公开(公告)号：US10224693B2

公开(公告)日：2019-03-05

申请号：US15652177

申请日：2017-07-17

Applicant: SpectraSensors, Inc.

Inventor： Alfred Feitisch ,  Gabi Neubauer ,  Mathias Schrempel

IPC: H01S3/04 ,  H01S5/022 ,  H01L23/00 ,  H01S5/042

Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

公开(公告)号：US09711937B2

公开(公告)日：2017-07-18

申请号：US14873080

申请日：2015-10-01

Applicant: SpectraSensors, Inc.

Inventor： Alfred Feitisch ,  Gabi Neubauer ,  Mathias Schrempel

IPC: H01S3/04 ,  H01S5/022 ,  H01L23/00 ,  H01S5/042

CPC classification number: H01S5/02272 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/0383 ,  H01L2224/04026 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05663 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/0568 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/32245 ,  H01L2224/83801 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01S5/02212 ,  H01S5/0425 ,  H01L2924/04941 ,  H01L2924/01022 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/00

Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

公开(公告)号：US09646949B2

公开(公告)日：2017-05-09

申请号：US14885931

申请日：2015-10-16

Applicant: SpectraSensors, Inc.

Inventor： Alfred Feitisch ,  Gabi Neubauer ,  Mathias Schrempel

IPC: H01S5/022 ,  H01L23/00 ,  H01L33/62 ,  B23K20/02 ,  H01S5/042 ,  B23K20/24 ,  H01S5/024 ,  B23K101/42

CPC classification number: H01L24/83 ,  B23K20/023 ,  B23K20/24 ,  B23K2101/42 ,  H01L33/62 ,  H01L2224/73265 ,  H01L2224/83201 ,  H01L2224/8385 ,  H01L2924/12042 ,  H01S5/02212 ,  H01S5/02256 ,  H01S5/0226 ,  H01S5/02264 ,  H01S5/02476 ,  H01S5/0425

Abstract: A first contact surface of a semiconductor laser chip can be formed to a first target surface roughness and a second contact surface of a carrier mounting can be formed to a second target surface roughness. A first bond preparation layer comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer comprising a second metal can optionally be applied to the formed second contact surface. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.

公开(公告)号：US20160028211A1

公开(公告)日：2016-01-28

申请号：US14873080

申请日：2015-10-01

Applicant: SpectraSensors, Inc.

Inventor： Alfred Feitisch ,  Gabi Neubauer ,  Mathias Schrempel

IPC: H01S5/022

CPC classification number: H01S5/02272 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/0383 ,  H01L2224/04026 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05663 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/0568 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/32245 ,  H01L2224/83801 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01S5/02212 ,  H01S5/0425 ,  H01L2924/04941 ,  H01L2924/01022 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/00

Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

Abstract translation: 可以将半导体激光器芯片的第一接触表面形成为选择为具有基本上小于阻挡层厚度的最大峰谷高度的目标表面粗糙度。 包含非金属导电性化合物并且具有阻挡层厚度的阻挡层可以施加到第一接触表面，并且可以使用焊料将半导体激光器芯片焊接到沿着第一接触表面安装的载体上 通过将焊料组合物加热到低于阻挡层溶入焊料组合物的阈值温度的组合物。 还描述了相关系统，方法，制品等。