公开(公告)号：US08384118B2

公开(公告)日：2013-02-26

申请号：US12767845

申请日：2010-04-27

申请人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

发明人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2924/01322 ,  H01L2924/00

摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

摘要翻译： 描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。 底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

公开(公告)号：US07736945B2

公开(公告)日：2010-06-15

申请号：US11611775

申请日：2006-12-15

申请人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

发明人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2924/01322 ,  H01L2924/00

摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

摘要翻译： 描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。 底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

公开(公告)号：US20070096130A1

公开(公告)日：2007-05-03

申请号：US11611775

申请日：2006-12-15

申请人： Stefano Schiaffino ,  Daniel Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

发明人： Stefano Schiaffino ,  Daniel Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2924/01322 ,  H01L2924/00

摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

摘要翻译： 描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。 底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

公开(公告)号：US20080142833A1

公开(公告)日：2008-06-19

申请号：US12028925

申请日：2008-02-11

申请人： Stefano Schiaffino ,  Ashim Shatil Haque ,  Paul S. Martin ,  Daniel A. Steigerwald ,  Decai Sun

发明人： Stefano Schiaffino ,  Ashim Shatil Haque ,  Paul S. Martin ,  Daniel A. Steigerwald ,  Decai Sun

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/48091 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/3011 ,  H01L2924/00014

摘要： A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.

公开(公告)号：US07348212B2

公开(公告)日：2008-03-25

申请号：US11226151

申请日：2005-09-13

申请人： Stefano Schiaffino ,  Ashim Shatil Haque ,  Paul S. Martin ,  Daniel A. Steigerwald ,  Decai Sun

发明人： Stefano Schiaffino ,  Ashim Shatil Haque ,  Paul S. Martin ,  Daniel A. Steigerwald ,  Decai Sun

IPC分类号： H01L21/00

CPC分类号： H01L33/62 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/48091 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/3011 ,  H01L2924/00014

摘要： A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.

摘要翻译： 包括设置在n型区域和p型区域之间的发光层和电连接到n型区域和p型区域的触点的半导体发光器件连接到安装件。 任意图案化以覆盖半导体发光器件的面积的至少20％的金属层被镀在形成在安装件上的金属层或形成在其中一个触点上的金属层上。 电镀金属层可以替代其他已知的互连技术，例如柱状凸块。 半导体发光器件通过引起金属层的接触表面之间的相互扩散而物理连接到安装座。 在一些实施例中，在电镀金属层上形成焊料层，然后半导体发光器件通过加热焊料物理连接到安装座。

公开(公告)号：US20070057271A1

公开(公告)日：2007-03-15

申请号：US11226151

申请日：2005-09-13

申请人： Stefano Schiaffino ,  Ashim Haque ,  Paul Martin ,  Daniel Steigerwald ,  Decai Sun

发明人： Stefano Schiaffino ,  Ashim Haque ,  Paul Martin ,  Daniel Steigerwald ,  Decai Sun

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/48091 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/3011 ,  H01L2924/00014

摘要： A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.

摘要翻译： 包括设置在n型区域和p型区域之间的发光层和与n型区域和p型区域电连接的触点的半导体发光器件连接到安装件。 任意图案化以覆盖半导体发光器件的面积的至少20％的金属层被镀在形成在安装件上的金属层或形成在其中一个触点上的金属层上。 电镀金属层可以替代其他已知的互连技术，例如柱状凸块。 半导体发光器件通过引起金属层的接触表面之间的相互扩散而物理连接到安装座。 在一些实施例中，在电镀金属层上形成焊料层，然后半导体发光器件通过加热焊料物理连接到安装座。

公开(公告)号：US08202741B2

公开(公告)日：2012-06-19

申请号：US12397367

申请日：2009-03-04

申请人： James G. Neff ,  John E. Epler ,  Stefano Schiaffino

发明人： James G. Neff ,  John E. Epler ,  Stefano Schiaffino

IPC分类号： H01L21/00

CPC分类号： H01L33/62 ,  H01L33/0079 ,  H01L33/38 ,  H01L2224/8112 ,  H01L2224/81801

摘要： A compliant bonding structure is disposed between a semiconductor device and a mount. In some embodiments, the device is a light emitting device. When the semiconductor light emitting device is attached to the mount, for example by providing ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.

摘要翻译： 柔性接合结构设置在半导体器件和安装件之间。 在一些实施例中，该装置是发光装置。 当半导体发光器件例如通过向半导体发光器件提供超声能量而将半导体发光器件附接到安装件时，柔性结合结构塌陷以部分地填充半导体发光器件和安装件之间的空间。 在一些实施例中，柔性接合结构是在接合期间经历塑性变形的多个金属凸块。 在一些实施例中，柔性结合结构是多孔金属层。

公开(公告)号：US20080096297A1

公开(公告)日：2008-04-24

申请号：US11550488

申请日：2006-10-18

申请人： Stefano Schiaffino ,  John Julian Uebbing

发明人： Stefano Schiaffino ,  John Julian Uebbing

IPC分类号： H01L21/00

CPC分类号： H01L33/382 ,  H01L33/20

摘要： A process for forming electrical contacts for a semiconductor light emitting apparatus is disclosed. The light emitting apparatus has a first layer of first conductivity type, an active layer for generating light overlying the first layer, and a second layer of second conductivity type overlying the active layer. The process involves forming at least a first and a second elongate electrical contact through the second layer and the active layer to provide electrical connection to the first layer, the first and second contacts oriented at an angle to each other, the first contact having a first end in proximity with the second contact, the first end being sufficiently spaced apart from the second contact such that when current is supplied to the first layer through the contacts, current contributions from the first end of the first contact and the second contact in an area generally between the first end and the second contact cause a current density in the area that is approximately equal to a current density elsewhere along the first and second contacts

摘要翻译： 公开了一种用于形成用于半导体发光装置的电触头的工艺。 发光装置具有第一导电类型的第一层，用于产生覆盖第一层的光的有源层和覆盖有源层的第二导电类型的第二层。 该方法包括通过第二层和有源层至少形成第一和第二细长电接触以提供与第一层的电连接，第一和第二接触彼此成一定角度，第一接触具有第一 在第二触点附近端部，第一端与第二触点充分隔开，使得当电流通过触点供应到第一层时，来自第一触点的第一端和第一触点的区域中的电流贡献 通常在第一端和第二接触之间引起区域中的电流密度近似等于沿着第一和第二触点的其他地方的电流密度

公开(公告)号：US06062681A

公开(公告)日：2000-05-16

申请号：US114978

申请日：1998-07-14

申请人： Leslie A. Field ,  Stefano Schiaffino ,  Phillip W. Barth ,  Storrs T. Hoen ,  Naoto A. Kawamura ,  David K. Donald ,  Channing R. Robertson ,  Jonathan D. Servaites

发明人： Leslie A. Field ,  Stefano Schiaffino ,  Phillip W. Barth ,  Storrs T. Hoen ,  Naoto A. Kawamura ,  David K. Donald ,  Channing R. Robertson ,  Jonathan D. Servaites

IPC分类号： B41J2/175 ,  B41J2/05

CPC分类号： B41J2/17596 ,  B41J2/19 ,  Y10S366/03

摘要： A bubble valve that comprises a liquid delivery channel and a localized heating arrangement. The liquid delivery channel includes an upstream portion and a constriction downstream of the upstream portion. The constriction has a smaller cross-sectional area than the upstream portion. The localized heating arrangement is located in the liquid delivery channel and generates heat to nucleate and enlarge a bubble in the liquid. The constriction is shaped to form a seal with the bubble. The localized heating arrangement additionally generates heat to move the bubble relative to the constriction to control the flow of the liquid. A pressure regulator that comprises a liquid delivery channel connected to a liquid outlet, a sensor located adjacent the liquid outlet, a controller that operates in response to the sensor and a localized heating arrangement. The liquid delivery channel includes an upstream portion, and a constriction located between the upstream portion and the liquid outlet. The constriction has a smaller cross-sectional area than the upstream portion. The localized heating arrangement is located in the liquid delivery channel and generates heat in response to the controller to nucleate and enlarge a bubble in the liquid. The constriction is shaped to form a seal with the bubble. The localized heating arrangement additionally generates heat to move the bubble relative to the constriction to control the flow of the liquid to the liquid outlet.

摘要翻译： 气泡阀，其包括液体输送通道和局部加热装置。 液体输送通道包括上游部分的下游部分和收缩部分。 缩颈具有比上游部分更小的横截面面积。 局部加热装置位于液体输送通道中并产生热量以成核并扩大液体中的气泡。 缩颈被成形为与气泡形成密封。 局部加热装置另外产生热量以相对于收缩部移动气泡以控制液体的流动。 一种压力调节器，包括连接到液体出口的液体输送通道，位于液体出口附近的传感器，响应于传感器操作的控制器和局部加热装置。 液体输送通道包括上游部分和位于上游部分和液体出口之间的收缩部。 缩颈具有比上游部分更小的横截面面积。 局部加热装置位于液体输送通道中，响应于控制器产生热量以成核并扩大液体中的气泡。 缩颈被成形为与气泡形成密封。 局部加热装置另外产生热量以相对于收缩部移动气泡以控制液体流到液体出口的流动。

公开(公告)号：US09076944B2

公开(公告)日：2015-07-07

申请号：US13470784

申请日：2012-05-14

申请人： James G. Neff ,  John E. Epler ,  Stefano Schiaffino

发明人： James G. Neff ,  John E. Epler ,  Stefano Schiaffino

IPC分类号： H01L21/00 ,  H01L33/62 ,  H01L33/38 ,  H01L33/00

CPC分类号： H01L33/62 ,  H01L33/0079 ,  H01L33/38 ,  H01L2224/8112 ,  H01L2224/81801

摘要： A compliant bonding structure is disposed between a semiconductor device and a mount. In some embodiments, the device is a light emitting device. When the semiconductor light emitting device is attached to the mount, for example by providing ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.

摘要翻译： 柔性接合结构设置在半导体器件和安装件之间。 在一些实施例中，该装置是发光装置。 当半导体发光器件例如通过向半导体发光器件提供超声能量而将半导体发光器件附接到安装件时，柔性结合结构塌陷以部分地填充半导体发光器件和安装件之间的空间。 在一些实施例中，柔性接合结构是在接合期间经历塑性变形的多个金属凸块。 在一些实施例中，柔性结合结构是多孔金属层。