公开(公告)号：US20070096130A1

公开(公告)日：2007-05-03

申请号：US11611775

申请日：2006-12-15

申请人： Stefano Schiaffino ,  Daniel Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

发明人： Stefano Schiaffino ,  Daniel Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2924/01322 ,  H01L2924/00

摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

摘要翻译： 描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。 底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

公开(公告)号：US08384118B2

公开(公告)日：2013-02-26

申请号：US12767845

申请日：2010-04-27

申请人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

发明人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2924/01322 ,  H01L2924/00

摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

摘要翻译： 描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。 底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

公开(公告)号：US07736945B2

公开(公告)日：2010-06-15

申请号：US11611775

申请日：2006-12-15

申请人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

发明人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2924/01322 ,  H01L2924/00

摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

摘要翻译： 描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。 底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

公开(公告)号：US20060240585A1

公开(公告)日：2006-10-26

申请号：US11421350

申请日：2006-05-31

申请人： John Epler ,  Paul Martin ,  Michael Krames

发明人： John Epler ,  Paul Martin ,  Michael Krames

IPC分类号： H01L21/00

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

公开(公告)号：US20060091409A1

公开(公告)日：2006-05-04

申请号：US10977294

申请日：2004-10-28

申请人： John Epler ,  Paul Martin ,  Michael Krames

发明人： John Epler ,  Paul Martin ,  Michael Krames

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

公开(公告)号：US20070072324A1

公开(公告)日：2007-03-29

申请号：US11237164

申请日：2005-09-27

申请人： Michael Krames ,  Nathan Gardner ,  John Epler

发明人： Michael Krames ,  Nathan Gardner ,  John Epler

IPC分类号： H01L21/00 ,  H01G9/20

CPC分类号： H01L21/76256 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079

摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

公开(公告)号：US20060223042A1

公开(公告)日：2006-10-05

申请号：US11131866

申请日：2005-05-18

申请人： John Epler ,  Michael Vanrooyen ,  Eric Spencer ,  Ron Elfenbein

发明人： John Epler ,  Michael Vanrooyen ,  Eric Spencer ,  Ron Elfenbein

IPC分类号： G09B7/00

CPC分类号： G09B7/00

摘要： A coaching device and method for providing emergency medical care instructions is shown. The device can include a memory, an audio input, an audio output, a visual display, and a processor. The memory stores a file set made up of multiple question files. The question files include audio data representing a spoken question, at least one valid answer proposed for the question, and visual material. The visual material can be a text version of the question or a valid answer or a visual illustration of the subject matter of the question. Each question file is linked with at least one other question file. A program manages the question files by playing a question, detecting a spoken valid answer to the spoken question, and loading another question file linked to the detected answer. The modular set of interrelated questions provides the rescuer with highly interactive instructions.

摘要翻译： 示出了用于提供紧急医疗保健指导的辅导装置和方法。 该设备可以包括存储器，音频输入，音频输出，视觉显示器和处理器。 内存存储由多个问题文件组成的文件集。 问题文件包括表示口语问题的音频数据，针对该问题提出的至少一个有效答案和视觉材料。 视觉材料可以是问题的文本版本或问题的主题的有效答案或视觉图示。 每个问题文件与至少一个其他问题文件相关联。 程序通过播放问题来管理问题文件，检测对口头问题的口头有效答案，以及加载与检测到的答案相关联的另一问题文件。 模块化的相互关联的问题集为救援者提供了高度互动的指导。

公开(公告)号：US20050205884A1

公开(公告)日：2005-09-22

申请号：US10805424

申请日：2004-03-19

申请人： Jarnes Kim ,  John Epler ,  Nathan Gardner ,  Michael Krames ,  Jonathan Wierer

发明人： Jarnes Kim ,  John Epler ,  Nathan Gardner ,  Michael Krames ,  Jonathan Wierer

IPC分类号： G02B5/30 ,  H01L33/10 ,  H01L33/18 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46 ,  H01S5/183 ,  H01S5/323 ,  H01L33/00

CPC分类号： H01L33/18 ,  H01L25/0756 ,  H01L33/105 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11{overscore (2)}0} or {10{overscore (1)}0} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.

摘要翻译： 半导体发光器件包括发射线偏振光的面内有源区域。 面内有源区可以包括例如{11 {过滤（20）或{10 {超（10）InGaN发光层）。在一些实施例中，定向为使通过大部分 在一些实施例中，发射相同或不同着色光的两个有源区域被定向成通过底部有源区域发射的大部分光的偏振光的偏振器隔开，以及 以反射由顶部有源区域发射的大部分光的偏振光。在一些实施例中，偏振器反射由波长转换层散射的光。

公开(公告)号：US20110084301A1

公开(公告)日：2011-04-14

申请号：US12969709

申请日：2010-12-16

申请人： John Epler ,  Paul S. Martin ,  Michael R. Krames

发明人： John Epler ,  Paul S. Martin ,  Michael R. Krames

IPC分类号： H01L33/48 ,  H01L33/36

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

公开(公告)号：US20070069225A1

公开(公告)日：2007-03-29

申请号：US11237215

申请日：2005-09-27

申请人： Michael Krames ,  Nathan Gardner ,  John Epler

发明人： Michael Krames ,  Nathan Gardner ,  John Epler

IPC分类号： H01L33/00 ,  H01L29/22

CPC分类号： H01L21/2654 ,  H01L21/76254 ,  H01L33/0075 ,  H01L33/0079 ,  H01S5/32341 ,  H01S2304/12

摘要： A semiconductor structure includes an n-type region, a p-type region, and a III-nitride light emitting layer disposed between the n-type region and the p-type region. The III-nitride light emitting layer has a lattice constant greater than 3.19 Å. Such a semiconductor structure may be grown on a substrate including a host and a seed layer bonded to the host. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

摘要翻译： 半导体结构包括设置在n型区域和p型区域之间的n型区域，p型区域和III族氮化物发光层。 III族氮化物发光层的晶格常数大于3.19埃。 这样的半导体结构可以在包含与主体结合的主体和种子层的基板上生长。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。