公开(公告)号：US20070096130A1

公开(公告)日：2007-05-03

申请号：US11611775

申请日：2006-12-15

申请人： Stefano Schiaffino ,  Daniel Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

发明人： Stefano Schiaffino ,  Daniel Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2924/01322 ,  H01L2924/00

摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

摘要翻译： 描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。 底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

公开(公告)号：US20070057271A1

公开(公告)日：2007-03-15

申请号：US11226151

申请日：2005-09-13

申请人： Stefano Schiaffino ,  Ashim Haque ,  Paul Martin ,  Daniel Steigerwald ,  Decai Sun

发明人： Stefano Schiaffino ,  Ashim Haque ,  Paul Martin ,  Daniel Steigerwald ,  Decai Sun

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/48091 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/3011 ,  H01L2924/00014

摘要： A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.

摘要翻译： 包括设置在n型区域和p型区域之间的发光层和与n型区域和p型区域电连接的触点的半导体发光器件连接到安装件。 任意图案化以覆盖半导体发光器件的面积的至少20％的金属层被镀在形成在安装件上的金属层或形成在其中一个触点上的金属层上。 电镀金属层可以替代其他已知的互连技术，例如柱状凸块。 半导体发光器件通过引起金属层的接触表面之间的相互扩散而物理连接到安装座。 在一些实施例中，在电镀金属层上形成焊料层，然后半导体发光器件通过加热焊料物理连接到安装座。

公开(公告)号：US20050167693A1

公开(公告)日：2005-08-04

申请号：US11095854

申请日：2005-03-30

申请人： Werner Goetz ,  Michael Camras ,  Changhua Chen ,  Xiaoping Chen ,  Gina Christenson ,  R. Kern ,  Chihping Kuo ,  Paul Martin ,  Daniel Steigerwald

发明人： Werner Goetz ,  Michael Camras ,  Changhua Chen ,  Xiaoping Chen ,  Gina Christenson ,  R. Kern ,  Chihping Kuo ,  Paul Martin ,  Daniel Steigerwald

IPC分类号： H01S5/30 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/323 ,  H01L21/00 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341 ,  H01L2924/00

摘要： P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.

摘要翻译： GaN基发光器件的P型层优化用于形成与金属的欧姆接触。 在第一实施例中，在p型导电层和金属接触之间形成电阻率大于或等于约7Ωcm的p型GaN过渡层。 在第二实施例中，p型过渡层是任何III-V半导体。 在第三实施例中，p型过渡层是超晶格。 在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。

公开(公告)号：US20060097336A1

公开(公告)日：2006-05-11

申请号：US11311961

申请日：2005-12-19

申请人： Yu-Chen Shen ,  Daniel Steigerwald ,  Paul Martin

发明人： Yu-Chen Shen ,  Daniel Steigerwald ,  Paul Martin

IPC分类号： H01L31/107

CPC分类号： H01L33/38 ,  H01L24/17 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2224/05599 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147

摘要： A light emitting device includes a first semiconductor layer of a first conductivity type, an active region, and a second semiconductor layer of a second conductivity type. First and second contacts are connected to the first and second semiconductor layers. In some embodiments at least one of the first and second contacts has a thickness greater than 3.5 microns. In some embodiments, a first heat extraction layer is connected to one of the first and second contacts. In some embodiments, one of the first and second contacts is connected to a submount by a solder interconnect having a length greater than a width. In some embodiments, an underfill is disposed between a submount and one of the first and second interconnects.

摘要翻译： 发光器件包括第一导电类型的第一半导体层，有源区和第二导电类型的第二半导体层。 第一和第二触点连接到第一和第二半导体层。 在一些实施例中，第一和第二触头中的至少一个具有大于3.5微米的厚度。 在一些实施例中，第一热提取层连接到第一和第二触点之一。 在一些实施例中，第一和第二触点中的一个通过具有大于宽度的长度的焊料互连件连接到基座。 在一些实施例中，底部填充物设置在子安装座和第一和第二互连件之一之间。

公开(公告)号：US20050093007A1

公开(公告)日：2005-05-05

申请号：US10699433

申请日：2003-10-31

申请人： Daniel Steigerwald ,  William Collins ,  Robert Fletcher ,  Michael Ludowise ,  Jason Posselt

发明人： Daniel Steigerwald ,  William Collins ,  Robert Fletcher ,  Michael Ludowise ,  Jason Posselt

IPC分类号： H01L33/50 ,  H01L29/20

CPC分类号： H01L33/505 ,  H01L2224/16

摘要： A structure includes semiconductor light emitting device and a wavelength converting layer. The wavelength converting layer converts a portion of the light emitted from the semiconductor light emitting device. The dominant wavelength of the combined light from the semiconductor light emitting device and the wavelength converting layer is essentially the same as the wavelength of light emitted from the device. The wavelength converting layer may emit light having a spectral luminous efficacy greater than the spectral luminous efficacy of the light emitted from the device. Thus, the structure has a higher luminous efficiency than a device without a wavelength converting layer.

摘要翻译： 一种结构包括半导体发光器件和波长转换层。 波长转换层转换从半导体发光器件发射的光的一部分。 来自半导体发光器件和波长转换层的组合光的主波长基本上与从器件发射的光的波长相同。 波长转换层可以发射具有大于从器件发射的光的光谱发光效率的光谱发光效率的光。 因此，该结构比没有波长转换层的器件具有更高的发光效率。

公开(公告)号：US20050067624A1

公开(公告)日：2005-03-31

申请号：US10961239

申请日：2004-10-07

申请人： Daniel Steigerwald ,  Jerome Bhat ,  Michael Ludowise

发明人： Daniel Steigerwald ,  Jerome Bhat ,  Michael Ludowise

IPC分类号： H01L21/28 ,  H01L29/41 ,  H01L33/08 ,  H01L33/38 ,  H01L29/26 ,  H01L29/423

CPC分类号： H01L33/382 ,  H01L33/08 ,  H01L33/20 ,  H01L33/486 ,  H01L2224/48247

摘要： A light emitting device includes a layer of first conductivity type, a layer of second conductivity type, and a light emitting layer disposed between the layer of first conductivity type and the layer of second conductivity type. A via is formed in the layer of second conductivity type, down to the layer of first conductivity type. The vias may be formed by, for example, etching, ion implantation, diffusion, or selective growth of at least one layer of second conductivity type. A first contact electrically contacts the layer of first conductivity type through the via. A second contact electrically contacts the layer of second conductivity type. A ring that surrounds the light emitting layer and is electrically connected to the first contact electrically contacts the layer of first conductivity type.

摘要翻译： 发光器件包括第一导电类型的层，第二导电类型的层和设置在第一导电类型层和第二导电类型层之间的发光层。 通孔形成在第二导电类型的层中，直到第一导电类型的层。 通孔可以通过例如至少一层第二导电类型的蚀刻，离子注入，扩散或选择性生长来形成。 第一接触件通过通孔电接触第一导电类型的层。 第二接触件电接触第二导电类型的层。 围绕发光层并与第一接触电连接的环电接触第一导电类型的层。

公开(公告)号：US20060273339A1

公开(公告)日：2006-12-07

申请号：US11464794

申请日：2006-08-15

申请人： Daniel Steigerwald ,  Jerome Bhat ,  Michael Ludowise

发明人： Daniel Steigerwald ,  Jerome Bhat ,  Michael Ludowise

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/08 ,  H01L33/20 ,  H01L33/486 ,  H01L2224/48247

摘要： A light emitting device includes a layer of first conductivity type, a layer of second conductivity type, and a light emitting layer disposed between the layer of first conductivity type and the layer of second conductivity type. A via is formed in the layer of second conductivity type, down to the layer of first conductivity type. The vias may be formed by, for example, etching, ion implantation, diffusion, or selective growth of at least one layer of second conductivity type. A first contact electrically contacts the layer of first conductivity type through the via. A second contact electrically contacts the layer of second conductivity type. A ring that surrounds the light emitting layer and is electrically connected to the first contact electrically contacts the layer of first conductivity type.

摘要翻译： 发光器件包括第一导电类型的层，第二导电类型的层和设置在第一导电类型层和第二导电类型层之间的发光层。 通孔形成在第二导电类型的层中，直到第一导电类型的层。 通孔可以通过例如至少一层第二导电类型的蚀刻，离子注入，扩散或选择性生长来形成。 第一接触件通过通孔电接触第一导电类型的层。 第二接触件电接触第二导电类型的层。 围绕发光层并与第一接触电连接的环电接触第一导电类型的层。

公开(公告)号：US20050179041A1

公开(公告)日：2005-08-18

申请号：US10782248

申请日：2004-02-18

申请人： Gerard Harbers ,  Matthijs Keuper ,  Daniel Steigerwald

发明人： Gerard Harbers ,  Matthijs Keuper ,  Daniel Steigerwald

IPC分类号： H01L33/58 ,  H04N9/31 ,  H01L27/15 ,  H01L21/00

CPC分类号： H04N9/315 ,  H01L33/58 ,  H01L2933/0058

摘要： The luminance of a system that includes a light emitting diode (LED), such as a projection system, may be increased by using an LED chip that has a light emitting surface that emits light directly into any medium with a refractive index of less than or equal to approximately 1.25. For example, the LED chip may emit light directly into the ambient environment, such as air or gas, instead of into an encapsulant. The low refractive index decreases the étendue of the LED, which increases luminance. Moreover, without an encapsulant, a collimating optical element, such as a lens, can be positioned close to the light emitting surface of the LED chip, which advantageously permits the capture of light emitted at large angles. A secondary collimating optical element may be used to assist in focusing the light on a target, such as a micro-display.

摘要翻译： 包括诸如投影系统的发光二极管（LED）的系统的亮度可以通过使用LED芯片来增加，该LED芯片具有发光表面，该发光表面直接将光直接发射到折射率小于或等于 等于大约1.25。 例如，LED芯片可以直接将光发射到诸如空气或气体的周围环境中，而不是进入密封剂。 低折射率降低了LED的亮度，增加了亮度。 此外，没有密封剂，诸如透镜的准直光学元件可以靠近LED芯片的发光表面定位，这有利地允许捕获以大角度发射的光。 辅助准直光学元件可以用于帮助将光聚焦在诸如微显示器的目标上。