公开(公告)号：US20070072324A1

公开(公告)日：2007-03-29

申请号：US11237164

申请日：2005-09-27

申请人： Michael Krames ,  Nathan Gardner ,  John Epler

发明人： Michael Krames ,  Nathan Gardner ,  John Epler

IPC分类号： H01L21/00 ,  H01G9/20

CPC分类号： H01L21/76256 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079

摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

公开(公告)号：US08384118B2

公开(公告)日：2013-02-26

申请号：US12767845

申请日：2010-04-27

申请人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

发明人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2924/01322 ,  H01L2924/00

摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

摘要翻译： 描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。 底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

公开(公告)号：US20100207157A1

公开(公告)日：2010-08-19

申请号：US12767845

申请日：2010-04-27

申请人： Stefano SCHIAFFINO ,  Daniel A. STEIGERWALD ,  Mari HOLCOMB ,  Grigoriy BASIN ,  Paul MARTIN ,  John EPLER

发明人： Stefano SCHIAFFINO ,  Daniel A. STEIGERWALD ,  Mari HOLCOMB ,  Grigoriy BASIN ,  Paul MARTIN ,  John EPLER

IPC分类号： H01L33/62

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2924/01322 ,  H01L2924/00

摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

摘要翻译： 描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。 底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

公开(公告)号：US07736945B2

公开(公告)日：2010-06-15

申请号：US11611775

申请日：2006-12-15

申请人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

发明人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2924/01322 ,  H01L2924/00

摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

摘要翻译： 描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。 底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

公开(公告)号：US20080308824A1

公开(公告)日：2008-12-18

申请号：US11763311

申请日：2007-06-14

申请人： Oleg Borisovich Shchekin ,  John Epler ,  Gregory W. Eng ,  Serge Bierhuizen ,  Gerard Harbers

发明人： Oleg Borisovich Shchekin ,  John Epler ,  Gregory W. Eng ,  Serge Bierhuizen ,  Gerard Harbers

IPC分类号： H01L33/00

CPC分类号： G02B6/0073 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Very thin flash modules for cameras are described that do not appear as a point source of light to the illuminated subject. Therefore, the flash is less objectionable to the subject. In one embodiment, the light emitting surface area is about 5 mm×10 mm. Low profile, side-emitting LEDs optically coupled to solid light guides enable the flash module to be thinner than 2 mm. The flash module may also be continuously energized for video recording. The module is particularly useful for cell phone cameras and other thin cameras.

摘要翻译： 描述了用于照相机的非常薄的闪光模块，其不会出现作为照明对象的点光源。 因此，闪光灯对该主题的反感较少。 在一个实施例中，发光表面积为约5mm×10mm。 光学耦合到实心光导体的低轮廓侧面发光LED使得闪光灯模块能够比2mm更薄。 闪光模块也可以连续通电用于视频记录。 该模块对于手机相机和其他薄型相机特别有用。

公开(公告)号：US07256483B2

公开(公告)日：2007-08-14

申请号：US10977294

申请日：2004-10-28

申请人： John Epler ,  Paul S. Martin ,  Michael R. Krames

发明人： John Epler ,  Paul S. Martin ,  Michael R. Krames

IPC分类号： H01L23/495

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

公开(公告)号：US20060281203A1

公开(公告)日：2006-12-14

申请号：US11149679

申请日：2005-06-09

申请人： John Epler ,  Oleg Shohekin ,  Franklin Wall ,  Jonathan Wierer ,  Ling Zhou

发明人： John Epler ,  Oleg Shohekin ,  Franklin Wall ,  Jonathan Wierer ,  Ling Zhou

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L24/97 ,  H01L33/382 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/0401

摘要： A semiconductor structure formed on a growth substrate and including a light emitting layer disposed between an n-type region and a p-type region is attached to a carrier by a connection that supports the semiconductor structure sufficiently to permit removal of the growth substrate. In some embodiments, the semiconductor structure is a flip chip device. The semiconductor structure may be attached to the carrier by, for example, a metal bond that supports almost the entire lateral extent of the semiconductor structure, or by interconnects such as solder or gold stud bumps. An underfill material which supports the semiconductor structure is introduced in any spaces between the interconnects. The underfill material may be a liquid that is cured to form a rigid structure. The growth substrate may then be removed without causing damage to the semiconductor structure.

摘要翻译： 在生长衬底上形成的包括设置在n型区域和p型区域之间的发光层的半导体结构通过足以支持半导体结构以允许去除生长衬底的连接而附着到载体上。 在一些实施例中，半导体结构是倒装芯片器件。 半导体结构可以通过例如支撑几乎整个半导体结构的整个横向范围的金属接合，或者通过诸如焊料或金柱凸起的互连来附接到载体。 支撑半导体结构的底部填充材料被引入互连之间的任何空间。 底部填充材料可以是固化以形成刚性结构的液体。 然后可以去除生长衬底而不会对半导体结构造成损害。

公开(公告)号：US20060258028A1

公开(公告)日：2006-11-16

申请号：US11444592

申请日：2006-05-31

申请人： Steven Paolini ,  Michael Camras ,  Oscar Chao Pujol ,  Frank Steranka ,  John Epler

发明人： Steven Paolini ,  Michael Camras ,  Oscar Chao Pujol ,  Frank Steranka ,  John Epler

IPC分类号： H01L21/00

CPC分类号： H01L33/508 ,  H01L33/22 ,  H01L33/58 ,  H01L2224/73253 ,  H01L2933/0041

摘要： A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.

摘要翻译： 通过在发光器件上沉积波长转换材料层来制造发光器件，测试该器件以确定产生的波长光谱并校正波长转换部件以产生所需的波长光谱。 可以通过减少或增加波长转换材料的量来校正波长转换构件。 在一个实施例中，波长转换构件中的波长转换材料的量例如通过激光烧蚀或蚀刻而减小，以产生所需的波长谱。

公开(公告)号：US20060240585A1

公开(公告)日：2006-10-26

申请号：US11421350

申请日：2006-05-31

申请人： John Epler ,  Paul Martin ,  Michael Krames

发明人： John Epler ,  Paul Martin ,  Michael Krames

IPC分类号： H01L21/00

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

公开(公告)号：US20060091409A1

公开(公告)日：2006-05-04

申请号：US10977294

申请日：2004-10-28

申请人： John Epler ,  Paul Martin ,  Michael Krames

发明人： John Epler ,  Paul Martin ,  Michael Krames

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.