公开(公告)号：US20050112883A1

公开(公告)日：2005-05-26

申请号：US10958866

申请日：2004-10-04

申请人： Stephen Savas ,  Songlin Xu ,  David Dutton ,  Andreas Kadavanich ,  Rene George

发明人： Stephen Savas ,  Songlin Xu ,  David Dutton ,  Andreas Kadavanich ,  Rene George

IPC分类号： H01L20060101 ,  H01L21/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461

CPC分类号： H01L21/31138 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/67207

摘要： In a technique for fabricating an integrated circuit to include an active device structure which supports an electrical interconnect structure, a photoresist layer is used prior to forming an electrical interconnect structure on the active device structure. The photoresist and related residues are removed by exposing the photoresist and exposed regions of the active device structure to one or more reactive species that are generated using a gas mixture including hydrogen gas, as a predominant source of the reactive species, in a plasma source such that the photoresist and residues are continuously exposed to hydrogen-based reactive species. An associated system architecture is described which provides for a substantial flow of hydrogen gas in the process chamber.

摘要翻译： 在用于制造集成电路以包括支持电互连结构的有源器件结构的技术中，在有源器件结构上形成电互连结构之前，使用光致抗蚀剂层。 通过将活性器件结构的光致抗蚀剂和暴露区域暴露于一种或多种使用包含作为反应性物质的主要来源的氢气的气体混合物在等离子体源中产生的反应性物质来除去光致抗蚀剂和相关残余物，例如 光致抗蚀剂和残留物连续暴露于基于氢的反应物种。 描述了相关联的系统架构，其提供了处理室中的大量氢气流。

公开(公告)号：US07799685B2

公开(公告)日：2010-09-21

申请号：US10958866

申请日：2004-10-04

申请人： Stephen E. Savas ,  Songlin Xu ,  David Dutton ,  Andreas Kadavanich ,  Rene George

发明人： Stephen E. Savas ,  Songlin Xu ,  David Dutton ,  Andreas Kadavanich ,  Rene George

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31138 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/67207

摘要： In a technique for fabricating an integrated circuit to include an active device structure which supports an electrical interconnect structure, a photoresist layer is used prior to forming an electrical interconnect structure on the active device structure. The photoresist and related residues are removed by exposing the photoresist and exposed regions of the active device structure to one or more reactive species that are generated using a gas mixture including hydrogen gas, as a predominant source of the reactive species, in a plasma source such that the photoresist and residues are continuously exposed to hydrogen-based reactive species. An associated system architecture is described which provides for a substantial flow of hydrogen gas in the process chamber.

摘要翻译： 在用于制造集成电路以包括支持电互连结构的有源器件结构的技术中，在有源器件结构上形成电互连结构之前，使用光致抗蚀剂层。 通过将活性器件结构的光致抗蚀剂和暴露区域暴露于一种或多种使用包含作为反应性物质的主要来源的氢气的气体混合物在等离子体源中产生的反应性物质来除去光致抗蚀剂和相关残余物，例如 光致抗蚀剂和残留物连续暴露于基于氢的反应物种。 描述了相关联的系统架构，其提供了处理室中的大量氢气流。

公开(公告)号：US20070113979A1

公开(公告)日：2007-05-24

申请号：US11564134

申请日：2006-11-28

申请人： Rene George ,  Andreas Kadavanich ,  Daniel Devine ,  Stephen Savas ,  John Zajac ,  Hongching Shan

发明人： Rene George ,  Andreas Kadavanich ,  Daniel Devine ,  Stephen Savas ,  John Zajac ,  Hongching Shan

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32431 ,  H01L21/02104 ,  H01L21/3065 ,  H01L21/6715 ,  H05H1/46

摘要： A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

摘要翻译： 实施了更均匀的等离子体处理，以使用电感耦合等离子体源来处理处理对象，该等离子体源使用具有均匀间隔开的狭缝的开槽静电屏蔽件在处理表面处产生不对称等离子体密度图案。 槽式静电屏蔽以补偿不对称等离子体密度图案的方式进行修改，以在处理表面提供改良的等离子体密度图案。 描述了更均匀的径向等离子体处理，其中静电屏蔽装置被配置为以提供在整个处理表面上产生修改的径向变化特征的方式来替换给定的静电屏蔽。 电感耦合等离子体源限定对称轴，并且静电屏蔽装置被配置为包括相对于对称轴延伸穿过半径范围的形状。

公开(公告)号：US08413604B2

公开(公告)日：2013-04-09

申请号：US11564134

申请日：2006-11-28

申请人： Rene George ,  Andreas Kadavanich ,  Daniel J. Devine ,  Stephen E. Savas ,  John Zajac ,  Hongching Shan

发明人： Rene George ,  Andreas Kadavanich ,  Daniel J. Devine ,  Stephen E. Savas ,  John Zajac ,  Hongching Shan

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32431 ,  H01L21/02104 ,  H01L21/3065 ,  H01L21/6715 ,  H05H1/46

摘要： A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

摘要翻译： 实施了更均匀的等离子体处理，以使用电感耦合等离子体源来处理处理对象，该等离子体源使用具有均匀间隔开的狭缝的开槽静电屏蔽件在处理表面处产生不对称等离子体密度图案。 槽式静电屏蔽以补偿不对称等离子体密度图案的方式进行修改，以在处理表面提供改良的等离子体密度图案。 描述了更均匀的径向等离子体处理，其中静电屏蔽装置被配置为以提供在整个处理表面上产生修改的径向变化特征的方式来替换给定的静电屏蔽。 电感耦合等离子体源限定对称轴，并且静电屏蔽装置被配置为包括相对于对称轴延伸穿过半径范围的形状。

公开(公告)号：US07232767B2

公开(公告)日：2007-06-19

申请号：US10803453

申请日：2004-03-18

申请人： Rene George ,  Andreas Kadavanich ,  Daniel J. Devine ,  Stephen E. Savas ,  John Zajac ,  Hongching Shan

发明人： Rene George ,  Andreas Kadavanich ,  Daniel J. Devine ,  Stephen E. Savas ,  John Zajac ,  Hongching Shan

IPC分类号： H01L21/302

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32431 ,  H01L21/02104 ,  H01L21/3065 ,  H01L21/6715 ,  H05H1/46

摘要： A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

摘要翻译： 实施了更均匀的等离子体处理，以使用电感耦合等离子体源来处理处理对象，该等离子体源使用具有均匀间隔开的狭缝的开槽静电屏蔽件在处理表面处产生不对称等离子体密度图案。 槽式静电屏蔽以补偿不对称等离子体密度图案的方式进行修改，以在处理表面提供改良的等离子体密度图案。 描述了更均匀的径向等离子体处理，其中静电屏蔽装置被配置为以提供在整个处理表面上产生修改的径向变化特征的方式来替换给定的静电屏蔽。 电感耦合等离子体源限定对称轴，并且静电屏蔽装置被配置为包括相对于对称轴延伸穿过半径范围的形状。

公开(公告)号：US09653264B2

公开(公告)日：2017-05-16

申请号：US13325455

申请日：2011-12-14

申请人： Vladimir Nagorny ,  Dongsoo Lee ,  Andreas Kadavanich

发明人： Vladimir Nagorny ,  Dongsoo Lee ,  Andreas Kadavanich

IPC分类号： H01J37/32

CPC分类号： H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32449 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32715 ,  H01J2237/334

摘要： Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.

公开(公告)号：US20120152901A1

公开(公告)日：2012-06-21

申请号：US13325455

申请日：2011-12-14

申请人： Vladimir Nagorny ,  Dongsoo Lee ,  Andreas Kadavanich

发明人： Vladimir Nagorny ,  Dongsoo Lee ,  Andreas Kadavanich

IPC分类号： C23F1/08 ,  C23F1/00

CPC分类号： H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32449 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32715 ,  H01J2237/334

摘要： Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.

摘要翻译： 公开了等离子体处理装置和方法。 本公开的实施例包括具有可操作以接收处理气体的内部空间的处理室，可操作以保持衬底的处理室内部的衬底保持器和至少一个电介质窗口。 金属屏蔽层邻近电介质窗设置。 金属屏蔽件可以具有周边部分和中心部分。 该处理设备包括一个主电感元件，其设置在与金属屏蔽的周边部分相邻的处理室的外部。 处理装置还可以包括设置在金属屏蔽件的中心部分和电介质窗口之间的次级电感元件。 初级和次级电感元件可以执行不同的功能，可以具有不同的结构配置，并且可以在不同的频率下工作。