公开(公告)号：US08853529B2

公开(公告)日：2014-10-07

申请号：US13568121

申请日：2012-08-06

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L31/00 ,  H01L31/0687 ,  H01L31/0735 ,  H01L31/0304 ,  H01L31/18 ,  H01L21/02

CPC分类号： H01L31/06875 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02664 ,  H01L31/03042 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Solar cell structures include stacked layers in reverse order on a germanium substrate wherein a n++ (In)GaAs buffer layer plays dual roles as buffer and contact layers in the inverted structures. The absorbing layers employed in such exemplary structures are III-V layers such as (In)GaAs. Controlled spalling may be employed as part of the fabrication process for the solar cell structures, which may be single or multi-junction. The requirement for etching a buffer layer is eliminated, thereby facilitating the manufacturing process of devices using the disclosed structures.

摘要翻译： 太阳能电池结构在锗衬底上以相反的顺序包括堆叠层，其中n ++（In）GaAs缓冲层在倒置结构中起缓冲层和接触层的双重作用。 在这种示例性结构中采用的吸收层是III-V层，例如（In）GaAs。 受控的剥落可以用作太阳能电池结构的制造过程的一部分，其可以是单结或多结。 消除了蚀刻缓冲层的要求，从而便于使用公开的结构的器件的制造过程。

公开(公告)号：US08569097B1

公开(公告)日：2013-10-29

申请号：US13543459

申请日：2012-07-06

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L21/00

CPC分类号： H01L31/06875 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02664 ,  H01L31/03042 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Solar cell structures include stacked layers in reverse order on a germanium substrate wherein a n++ (In)GaAs buffer layer plays dual roles as buffer and contact layers in the inverted structures. The absorbing layers employed in such exemplary structures are III-V layers such as (In)GaAs. Controlled spalling may be employed as part of the fabrication process for the solar cell structures, which may be single or multi-junction. The requirement for etching a buffer layer is eliminated, thereby facilitating the manufacturing process of devices using the disclosed structures.

摘要翻译： 太阳能电池结构在锗衬底上以相反的顺序包括堆叠层，其中n ++（In）GaAs缓冲层在倒置结构中起缓冲层和接触层的双重作用。 在这种示例性结构中采用的吸收层是III-V层，例如（In）GaAs。 受控的剥落可以用作太阳能电池结构的制造过程的一部分，其可以是单结或多结。 消除了蚀刻缓冲层的要求，从而便于使用公开的结构的器件的制造过程。

公开(公告)号：US20140007932A1

公开(公告)日：2014-01-09

申请号：US13568121

申请日：2012-08-06

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L31/074

CPC分类号： H01L31/06875 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02664 ,  H01L31/03042 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Solar cell structures include stacked layers in reverse order on a germanium substrate wherein a n++ (In)GaAs buffer layer plays dual roles as buffer and contact layers in the inverted structures. The absorbing layers employed in such exemplary structures are III-V layers such as (In)GaAs. Controlled spalling may be employed as part of the fabrication process for the solar cell structures, which may be single or multi-junction. The requirement for etching a buffer layer is eliminated, thereby facilitating the manufacturing process of devices using the disclosed structures.

摘要翻译： 太阳能电池结构在锗衬底上以相反的顺序包括堆叠层，其中n ++（In）GaAs缓冲层在倒置结构中起缓冲层和接触层的双重作用。 在这种示例性结构中采用的吸收层是III-V层，例如（In）GaAs。 受控的剥落可以用作太阳能电池结构的制造过程的一部分，其可以是单结或多结。 消除了蚀刻缓冲层的要求，从而便于使用公开的结构的器件的制造过程。

公开(公告)号：US08936961B2

公开(公告)日：2015-01-20

申请号：US13481795

申请日：2012-05-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/00

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

摘要翻译： 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。

公开(公告)号：US20130316488A1

公开(公告)日：2013-11-28

申请号：US13481795

申请日：2012-05-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/02 ,  H01L21/302 ,  H01L21/762

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

摘要翻译： 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。

公开(公告)号：US20130312819A1

公开(公告)日：2013-11-28

申请号：US13533229

申请日：2012-06-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/02 ,  H01L29/06

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

公开(公告)号：US20130025653A1

公开(公告)日：2013-01-31

申请号：US13193260

申请日：2011-07-28

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/074 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/0304 ,  H01L31/036 ,  H01L31/077 ,  H01L31/20 ,  Y02E10/50 ,  Y02E10/544 ,  Y02P70/521

摘要： Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar cell structure having improved open circuit voltage includes a shallow junction III-V emitter formed by epitaxy or diffusion followed by the epitaxy of SixGe1-x passivated by amorphous SiyGe1-y:H.

摘要翻译： 通过在III-V基底上的硅的低温外延生长，提供在异质界面上提高载流子收集效率的太阳能电池结构。 此外，具有改进的开路电压的太阳能电池结构包括通过外延或扩散形成的浅结III-V发射体，随后是通过非晶SiyGe1-y：H钝化的SixGe1-x的外延。

公开(公告)号：US08658444B2

公开(公告)日：2014-02-25

申请号：US13472584

申请日：2012-05-16

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/00

CPC分类号： H01L27/1218 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1266 ,  H01L2221/68368

摘要： A high resolution active matrix backplane is fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor devices is formed on a semiconductor-on-insulator substrate. The backplane layer is spalled from the substrate. A frontplane layer including passive devices such as LCDs, OLEDs, photosensitive materials, or piezo-electric materials is formed over the backplane layer to form an active matrix structure. The active matrix structure may be fabricated to allow bottom emission and provide mechanical flexibility.

摘要翻译： 使用适用于柔性基板的技术制造高分辨率有源矩阵背板。 包含有源半导体器件的背板层形成在绝缘体上半导体衬底上。 背板层从基板剥离。 包括诸如LCD，OLED，感光材料或压电材料的无源器件的前端层形成在背板层上以形成有源矩阵结构。 可以制造有源矩阵结构以允许底部发射并提供机械灵活性。

公开(公告)号：US08610212B2

公开(公告)日：2013-12-17

申请号：US13526139

申请日：2012-06-18

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L27/12

CPC分类号： H01L27/1218 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1266 ,  H01L2221/68368

摘要： A high resolution active matrix backplane is fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor devices is formed on a semiconductor-on-insulator substrate. The backplane layer is spalled from the substrate. A frontplane layer including passive devices such as LCDs, OLEDs, photosensitive materials, or piezo-electric materials is formed over the backplane layer to form an active matrix structure. The active matrix structure may be fabricated to allow bottom emission and provide mechanical flexibility.

摘要翻译： 使用适用于柔性基板的技术制造高分辨率有源矩阵背板。 包含有源半导体器件的背板层形成在绝缘体上半导体衬底上。 背板层从基板剥离。 包括诸如LCD，OLED，感光材料或压电材料的无源器件的前端层形成在背板层上以形成有源矩阵结构。 可以制造有源矩阵结构以允许底部发射并提供机械灵活性。

公开(公告)号：US20130306971A1

公开(公告)日：2013-11-21

申请号：US13526139

申请日：2012-06-18

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L27/088 ,  H01L33/08

CPC分类号： H01L27/1218 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1266 ,  H01L2221/68368

摘要： A high resolution active matrix backplane is fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor devices is formed on a semiconductor-on-insulator substrate. The backplane layer is spalled from the substrate. A frontplane layer including passive devices such as LCDs, OLEDs, photosensitive materials, or piezo-electric materials is formed over the backplane layer to form an active matrix structure. The active matrix structure may be fabricated to allow bottom emission and provide mechanical flexibility.