公开(公告)号：US08853529B2

公开(公告)日：2014-10-07

申请号：US13568121

申请日：2012-08-06

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L31/00 ,  H01L31/0687 ,  H01L31/0735 ,  H01L31/0304 ,  H01L31/18 ,  H01L21/02

CPC分类号： H01L31/06875 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02664 ,  H01L31/03042 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Solar cell structures include stacked layers in reverse order on a germanium substrate wherein a n++ (In)GaAs buffer layer plays dual roles as buffer and contact layers in the inverted structures. The absorbing layers employed in such exemplary structures are III-V layers such as (In)GaAs. Controlled spalling may be employed as part of the fabrication process for the solar cell structures, which may be single or multi-junction. The requirement for etching a buffer layer is eliminated, thereby facilitating the manufacturing process of devices using the disclosed structures.

摘要翻译： 太阳能电池结构在锗衬底上以相反的顺序包括堆叠层，其中n ++（In）GaAs缓冲层在倒置结构中起缓冲层和接触层的双重作用。 在这种示例性结构中采用的吸收层是III-V层，例如（In）GaAs。 受控的剥落可以用作太阳能电池结构的制造过程的一部分，其可以是单结或多结。 消除了蚀刻缓冲层的要求，从而便于使用公开的结构的器件的制造过程。

公开(公告)号：US08569097B1

公开(公告)日：2013-10-29

申请号：US13543459

申请日：2012-07-06

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L21/00

CPC分类号： H01L31/06875 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02664 ,  H01L31/03042 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Solar cell structures include stacked layers in reverse order on a germanium substrate wherein a n++ (In)GaAs buffer layer plays dual roles as buffer and contact layers in the inverted structures. The absorbing layers employed in such exemplary structures are III-V layers such as (In)GaAs. Controlled spalling may be employed as part of the fabrication process for the solar cell structures, which may be single or multi-junction. The requirement for etching a buffer layer is eliminated, thereby facilitating the manufacturing process of devices using the disclosed structures.

摘要翻译： 太阳能电池结构在锗衬底上以相反的顺序包括堆叠层，其中n ++（In）GaAs缓冲层在倒置结构中起缓冲层和接触层的双重作用。 在这种示例性结构中采用的吸收层是III-V层，例如（In）GaAs。 受控的剥落可以用作太阳能电池结构的制造过程的一部分，其可以是单结或多结。 消除了蚀刻缓冲层的要求，从而便于使用公开的结构的器件的制造过程。

公开(公告)号：US20140007932A1

公开(公告)日：2014-01-09

申请号：US13568121

申请日：2012-08-06

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L31/074

CPC分类号： H01L31/06875 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02664 ,  H01L31/03042 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Solar cell structures include stacked layers in reverse order on a germanium substrate wherein a n++ (In)GaAs buffer layer plays dual roles as buffer and contact layers in the inverted structures. The absorbing layers employed in such exemplary structures are III-V layers such as (In)GaAs. Controlled spalling may be employed as part of the fabrication process for the solar cell structures, which may be single or multi-junction. The requirement for etching a buffer layer is eliminated, thereby facilitating the manufacturing process of devices using the disclosed structures.

摘要翻译： 太阳能电池结构在锗衬底上以相反的顺序包括堆叠层，其中n ++（In）GaAs缓冲层在倒置结构中起缓冲层和接触层的双重作用。 在这种示例性结构中采用的吸收层是III-V层，例如（In）GaAs。 受控的剥落可以用作太阳能电池结构的制造过程的一部分，其可以是单结或多结。 消除了蚀刻缓冲层的要求，从而便于使用公开的结构的器件的制造过程。

公开(公告)号：US08936961B2

公开(公告)日：2015-01-20

申请号：US13481795

申请日：2012-05-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/00

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

摘要翻译： 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。

公开(公告)号：US20130316488A1

公开(公告)日：2013-11-28

申请号：US13481795

申请日：2012-05-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/02 ,  H01L21/302 ,  H01L21/762

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

摘要翻译： 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。

公开(公告)号：US20130312819A1

公开(公告)日：2013-11-28

申请号：US13533229

申请日：2012-06-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/02 ,  H01L29/06

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

公开(公告)号：US20130082357A1

公开(公告)日：2013-04-04

申请号：US13253059

申请日：2011-10-04

申请人： Ibrahim Alhomoudi ,  Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Ibrahim Alhomoudi ,  Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L29/16 ,  H01L29/04 ,  H01L21/60

CPC分类号： H01L31/02363 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03682 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A base layer of a semiconductor material is formed with a naturally textured surface. The base layer may be incorporated within a photovoltaic structure. A controlled spalling technique, in which substrate fracture is propagated in a selected direction to cause the formation of facets, is employed. Spalling in the [110] directions of a (001) silicon substrate results in the formation of such facets of the resulting base layer, providing a natural surface texture.

摘要翻译： 半导体材料的基层由天然纹理表面形成。 基底层可以结合在光伏结构内。 使用受控的剥落技术，其中衬底断裂沿所选方向传播以引起小平面的形成。 （001）硅衬底的[110]方向剥落导致所得到的基底层的这种面的形成，提供了自然的表面纹理。

公开(公告)号：US20130316538A1

公开(公告)日：2013-11-28

申请号：US13478749

申请日：2012-05-23

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

IPC分类号： H01L21/304 ,  H01L21/306

CPC分类号： H01L21/304 ,  H01L31/02363 ,  Y02E10/50

摘要： The generation of surface patterns or the replication of surface patterns is achieved in the present disclosure without the need to employ an etching process. Instead, a unique fracture mode referred to as spalling is used in the present disclosure to generate or replicate surface patterns. In the case of surface pattern generation, a surface pattern is provided in a stressor layer and then spalling is performed. In the case of surface pattern replication, a surface pattern is formed within or on a surface of a base substrate, and then a stressor layer is applied. After applying the stressor layer, spalling is performed. Generation or replication of surface patterns utilizing spalling provides a low cost means for generation or replication of surface patterns.

摘要翻译： 在本公开中实现表面图案的产生或表面图案的复制，而不需要采用蚀刻工艺。 相反，在本公开中使用称为剥落的独特的断裂模式来生成或复制表面图案。 在表面图案生成的情况下，在应力层中设置表面图案，然后进行剥离。 在表面图案复制的情况下，在基底表面上或表面上形成表面图案，然后施加应力层。 施加应力层后，进行剥落。 利用剥落产生或复制表面图案为生成或复制表面图案提供了低成本的手段。

公开(公告)号：US20130126493A1

公开(公告)日：2013-05-23

申请号：US13302427

申请日：2011-11-22

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

IPC分类号： B23K26/00

CPC分类号： H01L21/268 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/31127 ,  H01L21/32131 ,  H01L21/6835 ,  H01L2221/68327

摘要： Laser ablation can be used to form a trench within at least a blanket layer of a stressor layer that is atop a base substrate. A non-ablated portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can also be used to form a trench within a blanket material stack including at least a plating seed layer. A stressor layer is formed on the non-ablated portions of the material stack and one portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can be further used to form a trench that extends through a blanket stressor layer and into the base substrate itself. The trench has an edge that defines the edge of the material layer region to be spalled.

公开(公告)号：US09079269B2

公开(公告)日：2015-07-14

申请号：US13302427

申请日：2011-11-22

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

IPC分类号： B23K26/00 ,  H01L21/304 ,  B23K26/06 ,  B23K26/36 ,  B23K26/40

CPC分类号： H01L21/268 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/31127 ,  H01L21/32131 ,  H01L21/6835 ,  H01L2221/68327

摘要： Laser ablation can be used to form a trench within at least a blanket layer of a stressor layer that is atop a base substrate. A non-ablated portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can also be used to form a trench within a blanket material stack including at least a plating seed layer. A stressor layer is formed on the non-ablated portions of the material stack and one portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can be further used to form a trench that extends through a blanket stressor layer and into the base substrate itself. The trench has an edge that defines the edge of the material layer region to be spalled.

摘要翻译： 可以使用激光烧蚀在至少基底衬底顶部的应力层的至少一层覆盖层内形成沟槽。 应力层的非烧蚀部分具有限定要剥离的材料层区域的边缘的边缘。 激光烧蚀还可用于在包括至少镀覆种子层的覆盖材料堆叠内形成沟槽。 在材料堆叠的非烧蚀部分上形成应力层，应力层的一部分具有限定要剥离的材料层区域的边缘的边缘。 可以进一步使用激光烧蚀来形成延伸穿过覆盖应力层并进入基底本身的沟槽。 沟槽具有限定要剥离的材料层区域的边缘的边缘。