公开(公告)号：US07235487B2

公开(公告)日：2007-06-26

申请号：US10709562

申请日：2004-05-13

申请人： Steven P Barkyoumb ,  Jonathan D. Chapple-Sokol ,  Edward C. Cooney, III ,  Keith E. Downes ,  Thomas L. McDevitt ,  William J. Murphy

发明人： Steven P Barkyoumb ,  Jonathan D. Chapple-Sokol ,  Edward C. Cooney, III ,  Keith E. Downes ,  Thomas L. McDevitt ,  William J. Murphy

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76873

摘要： A method and structure for reducing the corrosion of the copper seed layer during the fabrication process of a semiconductor structure. Before the structure (or the wafer containing the structure) exits the vacuum environment of the sputter tool, the structure is warmed up to a temperature above the water condensation temperature of the environment outside the sputter tool. As a result, water vapor would not condense on the structure when the structure exits the sputter tool, and therefore, corrosion of the seed layer by the water vapor is prevented. Alternatively, a protective layer resistant to water vapor can be formed on top of the seed layer before the structure exits the sputter tool environment. In yet another alternative embodiment, the seed layer can comprises a copper alloy (such as with aluminum) which grows a protective layer resistant to water vapor upon exposure to water vapor.

摘要翻译： 一种用于在半导体结构的制造过程中减少铜籽晶层的腐蚀的方法和结构。 在结构（或包含结构的晶片）离开溅射工具的真空环境之前，将结构加热到高于溅射工具外部环境的水冷凝温度的温度。 结果，当结构离开溅射工具时，水蒸气不会在结构上冷凝，因此防止了水蒸气对种子层的腐蚀。 或者，在结构离开溅射工具环境之前，可以在籽晶层的顶部形成耐水蒸汽的保护层。 在另一替代实施例中，种子层可以包括铜合金（例如用铝），其在暴露于水蒸汽时生长出耐水蒸气的保护层。

公开(公告)号：US07879716B2

公开(公告)日：2011-02-01

申请号：US11687017

申请日：2007-03-16

申请人： Steven P. Barkyoumb ,  Jonathan D. Chapple-Sokol ,  Edward C. Cooney, III ,  Keith E. Downes ,  Thomas L. McDevitt ,  William J. Murphy

发明人： Steven P. Barkyoumb ,  Jonathan D. Chapple-Sokol ,  Edward C. Cooney, III ,  Keith E. Downes ,  Thomas L. McDevitt ,  William J. Murphy

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76873

摘要： A method and structure for reducing the corrosion of the copper seed layer during the fabrication process of a semiconductor structure. Before the structure (or the wafer containing the structure) exits the vacuum environment of the sputter tool, the structure is warmed up to a temperature above the water condensation temperature of the environment outside the sputter tool. As a result, water vapor would not condense on the structure when the structure exits the sputter tool, and therefore, corrosion of the seed layer by the water vapor is prevented. Alternatively, a protective layer resistant to water vapor can be formed on top of the seed layer before the structure exits the sputter tool environment. In yet another alternative embodiment, the seed layer can comprises a copper alloy (such as with aluminum) which grows a protective layer resistant to water vapor upon exposure to water vapor.

摘要翻译： 一种用于在半导体结构的制造过程中减少铜籽晶层的腐蚀的方法和结构。 在结构（或包含结构的晶片）离开溅射工具的真空环境之前，将结构加热到高于溅射工具外部环境的水冷凝温度的温度。 结果，当结构离开溅射工具时，水蒸气不会在结构上冷凝，因此防止了水蒸气对种子层的腐蚀。 或者，在结构离开溅射工具环境之前，可以在籽晶层的顶部形成耐水蒸汽的保护层。 在另一替代实施例中，种子层可以包括铜合金（例如用铝），其在暴露于水蒸汽时生长出耐水蒸气的保护层。

公开(公告)号：US20090212434A1

公开(公告)日：2009-08-27

申请号：US12035449

申请日：2008-02-22

申请人： Felix P. Anderson ,  Steven P. Barkyoumb ,  Edward C. Cooney, III ,  Thomas L. McDevitt ,  William J. Murphy ,  David C. Strippe

发明人： Felix P. Anderson ,  Steven P. Barkyoumb ,  Edward C. Cooney, III ,  Thomas L. McDevitt ,  William J. Murphy ,  David C. Strippe

IPC分类号： H01L21/768 ,  H01L23/538

CPC分类号： H01L23/53209 ,  C23C14/02 ,  C23C14/0641 ,  H01L21/2855 ,  H01L21/76843 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： Processes for improving adhesion of films to semiconductor wafers and a semiconductor structure are provided. By implementing the processes of the invention, it is possible to significantly suppress defect creation, e.g., decrease particle generation, during wafer fabrication processes. More specifically, the processes described significantly reduce flaking of a TaN film from edges or extreme edges (bevel) of the wafer by effectively increasing the adhesion properties of the TaN film on the wafer. The method increasing a mol percent of nitride with respect to a total tantalum plus nitride to 25% or greater during a barrier layer fabrication process.

摘要翻译： 提供了用于提高膜对半导体晶片和半导体结构的附着力的方法。 通过实施本发明的方法，可以在晶片制造工艺期间显着抑制缺陷产生，例如减少颗粒产生。 更具体地，所描述的工艺通过有效地增加TaN膜在晶片上的粘合性能，显着地减少了晶片的边缘或边缘（斜面）对TaN膜的剥落。 在阻挡层制造过程中，相对于总钽加氮化物将氮化物的摩尔百分数提高到25％或更大的方法。

公开(公告)号：US08969195B2

公开(公告)日：2015-03-03

申请号：US12035449

申请日：2008-02-22

申请人： Felix P. Anderson ,  Steven P. Barkyoumb ,  Edward C. Cooney, III ,  Thomas L. McDevitt ,  William J. Murphy ,  David C. Strippe

发明人： Felix P. Anderson ,  Steven P. Barkyoumb ,  Edward C. Cooney, III ,  Thomas L. McDevitt ,  William J. Murphy ,  David C. Strippe

IPC分类号： H01L21/44 ,  H01L21/285 ,  C23C14/02 ,  C23C14/06 ,  H01L21/768

CPC分类号： H01L23/53209 ,  C23C14/02 ,  C23C14/0641 ,  H01L21/2855 ,  H01L21/76843 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： Processes for improving adhesion of films to semiconductor wafers and a semiconductor structure are provided. By implementing the processes of the invention, it is possible to significantly suppress defect creation, e.g., decrease particle generation, during wafer fabrication processes. More specifically, the processes described significantly reduce flaking of a TaN film from edges or extreme edges (bevel) of the wafer by effectively increasing the adhesion properties of the TaN film on the wafer. The method increasing a mol percent of nitride with respect to a total tantalum plus nitride to 25% or greater during a barrier layer fabrication process.

摘要翻译： 提供了用于改善膜对半导体晶片和半导体结构的附着力的方法。 通过实施本发明的方法，可以在晶片制造工艺期间显着抑制缺陷产生，例如减少颗粒产生。 更具体地，所描述的工艺通过有效地增加TaN膜在晶片上的粘合性能，显着地减少了晶片的边缘或边缘（斜面）对TaN膜的剥落。 在阻挡层制造过程中，相对于总钽加氮化物将氮化物的摩尔百分数提高到25％或更大的方法。

公开(公告)号：US08604618B2

公开(公告)日：2013-12-10

申请号：US13239533

申请日：2011-09-22

申请人： Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Xiao Hu Liu ,  Thomas L. McDevitt ,  Gary L. Milo ,  William J. Murphy

发明人： Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Xiao Hu Liu ,  Thomas L. McDevitt ,  Gary L. Milo ,  William J. Murphy

IPC分类号： H01L23/485 ,  H01L21/3205

CPC分类号： H01L21/76802 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method of fabricating the same, includes vertically stacked layers on an insulator. Each of the layers includes a first dielectric insulator portion, a first metal conductor embedded within the first dielectric insulator portion, a first nitride cap covering the first metal conductor, a second dielectric insulator portion, a second metal conductor embedded within the second dielectric insulator portion, and a second nitride cap covering the second metal conductor. The first and second metal conductors form first vertically stacked conductor layers and second vertically stacked conductor layers. The first vertically stacked conductor layers are proximate the second vertically stacked conductor layers, and at least one air gap is positioned between the first vertically stacked conductor layers and the second vertically stacked conductor layers. An upper semiconductor layer covers the first vertically stacked conductor layers, the air gap and the second plurality of vertically stacked conductor layers.

摘要翻译： 半导体器件及其制造方法包括在绝缘体上的垂直堆叠的层。 每个层包括第一介电绝缘体部分，嵌入在第一介电绝缘体部分内的第一金属导体，覆盖第一金属导体的第一氮化物帽，第二电介质绝缘体部分，嵌入在第二介电绝缘体部分内的第二金属导体 以及覆盖所述第二金属导体的第二氮化物帽。 第一和第二金属导体形成第一垂直堆叠的导体层和第二垂直堆叠的导体层。 第一垂直堆叠的导体层靠近第二垂直堆叠的导体层，并且至少一个气隙位于第一垂直堆叠的导体层和第二垂直堆叠的导体层之间。 上半导体层覆盖第一垂直堆叠的导体层，气隙和第二多个垂直堆叠的导体层。

公开(公告)号：US20130075913A1

公开(公告)日：2013-03-28

申请号：US13239533

申请日：2011-09-22

申请人： Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Xiao Hu Liu ,  Thomas L. McDevitt ,  Gary L. Milo ,  William J. Murphy

发明人： Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Xiao Hu Liu ,  Thomas L. McDevitt ,  Gary L. Milo ,  William J. Murphy

IPC分类号： H01L23/485 ,  H01L21/3205

CPC分类号： H01L21/76802 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method of fabricating the same, includes vertically stacked layers on an insulator. Each of the layers includes a first dielectric insulator portion, a first metal conductor embedded within the first dielectric insulator portion, a first nitride cap covering the first metal conductor, a second dielectric insulator portion, a second metal conductor embedded within the second dielectric insulator portion, and a second nitride cap covering the second metal conductor. The first and second metal conductors form first vertically stacked conductor layers and second vertically stacked conductor layers. The first vertically stacked conductor layers are proximate the second vertically stacked conductor layers, and at least one air gap is positioned between the first vertically stacked conductor layers and the second vertically stacked conductor layers. An upper semiconductor layer covers the first vertically stacked conductor layers, the air gap and the second plurality of vertically stacked conductor layers.

公开(公告)号：US06762121B2

公开(公告)日：2004-07-13

申请号：US09826036

申请日：2001-04-04

申请人： Jonathan D. Chapple-Sokol ,  Randy W. Mann ,  William J. Murphy ,  Jed H. Rankin ,  Daniel S. Vanslette

发明人： Jonathan D. Chapple-Sokol ,  Randy W. Mann ,  William J. Murphy ,  Jed H. Rankin ,  Daniel S. Vanslette

IPC分类号： C23C1434

CPC分类号： C23C28/00 ,  Y10T428/12

摘要： A method of ensuring against deterioration of an underlying silicide layer over which a refractory material layer is deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is realized by first providing a continuous polysilicon layer prior to the refractory material deposition. The continuous polysilicon layer, preferably no thicker than 50 Å, serves a sacrificial purpose and prevents interaction between any fluorine that is released during the refractory material deposition step from interacting with the underlying silicide.

摘要翻译： 通过首先在耐火材料沉积之前提供连续的多晶硅层，来实现通过物理气相沉积（PVD）或化学气相沉积（CVD）确保耐蚀材料层沉积在其下的硅化物层的劣化的方法。 连续多晶硅层，优选不大于50，用于牺牲目的，并且防止在耐火材料沉积步骤期间释放的任何氟与下面的硅化物相互作用的相互作用。

公开(公告)号：US20090230555A1

公开(公告)日：2009-09-17

申请号：US12049698

申请日：2008-03-17

申请人： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

发明人： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53223 ,  H01L23/5329 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： An underlying interconnect level containing underlying W vias embedded in a dielectric material layer are formed on a semiconductor substrate. A metallic layer stack comprising, from bottom to top, a low-oxygen-reactivity metal layer, a bottom transition metal layer, a bottom transition metal nitride layer, an aluminum-copper layer, an optional top transition metal layer, and a top transition metal nitride layer. The metallic layer stack is lithographically patterned to form at least one aluminum-based metal line, which constitutes a metal interconnect structure. The low-oxygen-reactivity metal layer enhances electromigration resistance of the at least one aluminum-based metal line since formation of compound between the bottom transition metal layer and the dielectric material layer is prevented by the low-oxygen-reactivity metal layer, which does not interact with the dielectric material layer.

摘要翻译： 在半导体衬底上形成包含埋在电介质材料层中的底层W通孔的底层互连层。 一种金属层堆叠，包括从底部到顶部的低氧反应性金属层，底部过渡金属层，底部过渡金属氮化物层，铝 - 铜层，任选的顶部过渡金属层和顶部过渡层 金属氮化物层。 金属层堆叠被光刻图案化以形成至少一个构成金属互连结构的铝基金属线。 低氧反应性金属层由于通过低氧反应性金属层防止了底部过渡金属层和电介质材料层之间的化合物的形成，因此提高了至少一种铝基金属线的电迁移率 不与介电材料层相互作用。

公开(公告)号：US08084864B2

公开(公告)日：2011-12-27

申请号：US13114342

申请日：2011-05-24

申请人： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

发明人： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76834 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76858 ,  H01L2221/1078

摘要： A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.

摘要翻译： 在下面的金属互连结构上形成由元素金属衬垫，金属氮化物衬垫，Ti衬垫，铝部分和金属氮化物盖的从底部到顶部的垂直金属堆叠。 垂直金属叠层在升高的温度下退火，以通过Ti衬垫与铝部分的材料反应而引起TiAl 3衬层的形成。 TiAl 3衬垫的材料对电迁移是耐受的，从而对包括元素金属衬垫，金属氮化物衬垫，TiAl 3衬里，铝部分和金属氮化物盖的垂直金属堆叠提供增强的电迁移阻力。 在金属氮化物盖在加工过程中遭受侵蚀的区域中，增强的耐电迁移性的作用可能更为突出。

公开(公告)号：US20110221064A1

公开(公告)日：2011-09-15

申请号：US13114342

申请日：2011-05-24

申请人： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

发明人： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

IPC分类号： H01L23/522

CPC分类号： H01L21/76834 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76858 ,  H01L2221/1078

摘要： A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.

摘要翻译： 在下面的金属互连结构上形成由元素金属衬垫，金属氮化物衬垫，Ti衬垫，铝部分和金属氮化物盖的从底部到顶部的垂直金属堆叠。 垂直金属叠层在升高的温度下退火，以通过Ti衬垫与铝部分的材料反应而引起TiAl 3衬层的形成。 TiAl 3衬垫的材料对电迁移是耐受的，从而对包括元素金属衬垫，金属氮化物衬垫，TiAl 3衬里，铝部分和金属氮化物盖的垂直金属堆叠提供增强的电迁移阻力。 在金属氮化物盖在加工过程中遭受侵蚀的区域中，增强的耐电迁移性的作用可能更为突出。